APT50M60JVR
500V 63A
POWER MOS V® MOSFET
S
S
27
2
T-
D
G
Power MOS V® is a new generation of high voltage N-Channel enhancement
mode power MOSFETs. This new technology minimizes the JFET effect,
increases packing density and reduces the on-resistance. Power MOS V®
also achieves faster switching speeds through optimized gate layout.
• Popular SOT-227 Package
0.060Ω
SO
"UL Recognized"
ISOTOP ®
• Avalanche Energy Rated
D
• Faster Switching
G
• Lower Leakage
S
MAXIMUM RATINGS
Symbol
All Ratings: TC = 25°C unless otherwise specified.
Parameter
APT50M60JVR
UNIT
Drain-Source Voltage
500
Volts
ID
Continuous Drain Current @ TC = 25°C
63
IDM
Pulsed Drain Current
VGS
Gate-Source Voltage Continuous
±30
VGSM
Gate-Source Voltage Transient
±40
Total Power Dissipation @ TC = 25°C
568
Watts
Linear Derating Factor
4.55
W/°C
VDSS
PD
TJ,TSTG
1
Operating and Storage Junction Temperature Range
TL
Lead Temperature: 0.063" from Case for 10 Sec.
IAR
Avalanche Current
EAR
Repetitive Avalanche Energy
EAS
1
Amps
252
-55 to 150
°C
300
Amps
63
(Repetitive and Non-Repetitive)
1
Single Pulse Avalanche Energy
Volts
50
4
mJ
3200
STATIC ELECTRICAL CHARACTERISTICS
MIN
BVDSS
Drain-Source Breakdown Voltage (VGS = 0V, ID = 250µA)
500
RDS(on)
Drain-Source On-State Resistance
IDSS
IGSS
VGS(th)
2
(VGS = 10V, ID = 31.5A)
TYP
MAX
Volts
0.060
Zero Gate Voltage Drain Current (VDS = 500V, VGS = 0V)
25
Zero Gate Voltage Drain Current (VDS = 400V, VGS = 0V, TC = 125°C)
250
Gate-Source Leakage Current (VGS = ±30V, VDS = 0V)
Gate Threshold Voltage (VDS = VGS, ID = 5mA)
Ohms
µA
±100
nA
4
Volts
2
CAUTION: These Devices are Sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed.
APT Website - http://www.advancedpower.com
UNIT
5-2004
Characteristic / Test Conditions
050-7250 Rev A
Symbol
DYNAMIC CHARACTERISTICS
Symbol
APT50M60JVR
Test Conditions
Characteristic
MIN
TYP
Ciss
Input Capacitance
Coss
Output Capacitance
VDS = 25V
1800
Reverse Transfer Capacitance
f = 1 MHz
795
VGS = 10V
560
VDD = 250V
70
C rss
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain ("Miller ") Charge
td(on)
ID = 63A @ 25°C
td(off)
tf
25
VDD = 250V
RG = 0.6Ω
Fall Time
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
Eon
Turn-on Switching Energy
Eoff
Turn-off Switching Energy
10
INDUCTIVE SWITCHING @ 25°C
6
1235
VDD = 333V, VGS = 15V
6
ns
80
ID = 63A @ 25°C
Turn-off Delay Time
nC
20
VGS = 15V
Rise Time
pF
285
RESISTIVE SWITCHING
Turn-on Delay Time
tr
UNIT
10600
VGS = 0V
3
MAX
ID = 63A, RG = 5Ω
2820
INDUCTIVE SWITCHING @ 125°C
1700
VDD = 333V, VGS = 15V
ID = 63A, RG = 5Ω
µJ
2900
SOURCE-DRAIN DIODE RATINGS AND CHARACTERISTICS
Symbol
MIN
Characteristic / Test Conditions
TYP
MAX
63
UNIT
IS
Continuous Source Current (Body Diode)
ISM
Pulsed Source Current
1
VSD
Diode Forward Voltage
2
t rr
Reverse Recovery Time (IS = -63A, dl S/dt = 100A/µs)
680
ns
Q rr
Reverse Recovery Charge (IS = -63A, dl S/dt = 100A/µs)
17
µC
dv/
Peak Diode Recovery
dt
dv/
252
(Body Diode)
1.3
(VGS = 0V, IS = - 63A)
dt
Amps
Volts
8
V/ns
MAX
UNIT
5
THERMAL CHARACTERISTICS
Symbol
Characteristic
MIN
RθJC
Junction to Case
RθJA
Junction to Ambient
TYP
0.22
40
1 Repetitive Rating: Pulse width limited by maximum junction
temperature
2 Pulse Test: Pulse width < 380 µs, Duty Cycle < 2%
3 See MIL-STD-750 Method 3471
4 Starting Tj = +25°C, L = 1.61mH, RG = 25Ω, Peak IL = 63A
5 dv/dt numbers reflect the limitations of the test circuit rather than the
device itself. IS ≤ -ID63A di/dt ≤ 700A/µs VR ≤ 500V TJ ≤ 150°C
6 Eon includes diode reverse recovery. See figures 18, 20.
APT Reserves the right to change, without notice, the specifications and information contained herein.
0.9
0.7
0.15
0.5
Note:
0.10
PDM
Z JC, THERMAL IMPEDANCE (°C/W)
θ
050-7250 Rev A
5-2004
0.25
0.20
0.3
0.1
0
t1
t2
0.05
10-5
Duty Factor D = t1/t2
SINGLE PULSE
0.05
10-4
10-3
°C/W
Peak TJ = PDM x ZθJC + TC
10-2
10-1
1.0
RECTANGULAR PULSE DURATION (SECONDS)
FIGURE 1, MAXIMUM EFFECTIVE TRANSIENT THERMAL IMPEDANCE, JUNCTION-TO-CASE vs PULSE DURATION
10
Typical Performance Curves
200
RC MODEL
0.0516
Power
(watts)
0.149
0.0198
180
0.0260F
0.448F
42.3F
ID, DRAIN CURRENT (AMPERES)
Junction
temp. (°C)
Case temperature. (°C)
APT50M60JVR
VGS =15 & 10V
8V
160
7.5V
140
120
7V
100
80
6.5V
60
40
6V
20
5.5V
0
VDS> ID (ON) x RDS (ON)MAX.
250µSEC. PULSE TEST
@ <0.5 % DUTY CYCLE
100
80
TJ = -55°C
60
TJ = +25°C
40
TJ = +125°C
20
0
0
1
2
3
4
5
6
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 4, TRANSFER CHARACTERISTICS
BVDSS, DRAIN-TO-SOURCE BREAKDOWN
VOLTAGE (NORMALIZED)
ID, DRAIN CURRENT (AMPERES)
60
50
40
30
20
10
25
50
75
100
125
150
TC, CASE TEMPERATURE (°C)
FIGURE 6, MAXIMUM DRAIN CURRENT vs CASE TEMPERATURE
2.5
1.20
VGS=10V
1.10
1.00
VGS=20V
0.90
0.80
0
I
D
V
1.05
1.00
0.95
0.90
0.85
= 10V
2.0
1.5
1.0
0.5
0.0
-50
1.10
1.2
= 31.5A
GS
20
40
60
80 100 120 140 160
ID, DRAIN CURRENT (AMPERES)
FIGURE 5, RDS(ON) vs DRAIN CURRENT
-50 -25
0
25
50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 7, BREAKDOWN VOLTAGE vs TEMPERATURE
-25
0
25 50
75 100 125 150
TJ, JUNCTION TEMPERATURE (°C)
FIGURE 8, ON-RESISTANCE vs. TEMPERATURE
VGS(TH), THRESHOLD VOLTAGE
(NORMALIZED)
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
(NORMALIZED)
1.30
1.15
70
NORMALIZED TO
= 10V @ 31.5A
GS
1.1
1.0
0.9
0.8
0.7
0.6
-50
-25
0
25
50
75 100 125 150
TC, CASE TEMPERATURE (°C)
FIGURE 9, THRESHOLD VOLTAGE vs TEMPERATURE
5-2004
120
V
050-7250 Rev A
ID, DRAIN CURRENT (AMPERES)
140
RDS(ON), DRAIN-TO-SOURCE ON RESISTANCE
FIGURE 2, TRANSIENT THERMAL IMPEDANCE MODEL
0
5
10
15
20
25
30
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 3, LOW VOLTAGE OUTPUT CHARACTERISTICS
1.40
10
1mS
5
VGS, GATE-TO-SOURCE VOLTAGE (VOLTS)
10mS
TC =+25°C
TJ =+150°C
SINGLE PULSE
1
10
100
500
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 10, MAXIMUM SAFE OPERATING AREA
16
D
= 63A
VDS = 100V
12
VDS = 250V
8
4
VDS = 400V
0
0
100 200 300 400 500 600 700 800
Qg, TOTAL GATE CHARGE (nC)
FIGURE 12, GATE CHARGES vs GATE-TO-SOURCE VOLTAGE
C, CAPACITANCE (pF)
100µS
50
I
Coss
1,000
Crss
100
0
10
20
30
40
50
VDS, DRAIN-TO-SOURCE VOLTAGE (VOLTS)
FIGURE 11, CAPACITANCE vs DRAIN-TO-SOURCE VOLTAGE
200
100
TJ =+150°C
TJ =+25°C
10
1
0.3
0.5
0.7
0.9
1.1
1.3
1.5
VSD, SOURCE-TO-DRAIN VOLTAGE (VOLTS)
FIGURE 13, SOURCE-DRAIN DIODE FORWARD VOLTAGE
250
700
V
DD
R
G
600
td(off)
500
V
DD
R
T = 125°C
J
L = 100µH
300
J
L = 100µH
150
100
200
50
100
6,000
30
0
10
70
90
110
130
ID (A)
FIGURE 14, DELAY TIMES vs CURRENT
7,000
V
DD
R
G
50
70
90
110
130
ID (A)
FIGURE 15, RISE AND FALL TIMES vs CURRENT
25,000
= 333V
DD
I
D
T = 125°C
EON includes
diode reverse recovery.
4,000
3,000
Eoff
Eon
SWITCHING ENERGY (µJ)
SWITCHING ENERGY (µJ)
5-2004
L = 100µH
2,000
30
V
= 5Ω
J
5,000
tr
td(on)
0
10
050-7250 Rev A
tf
= 333V
= 5Ω
G
400
= 333V
= 5Ω
T = 125°C
200
tr and tf (ns)
td(on) and td(off) (ns)
Ciss
10,000
100
1
APT50M60JVR
20,000
OPERATION HERE
LIMITED BY RDS (ON)
IDR, REVERSE DRAIN CURRENT (AMPERES)
ID, DRAIN CURRENT (AMPERES)
252
50
= 333V
= 63A
T = 125°C
20,000
J
L = 100µH
EON includes
Eoff
diode reverse recovery.
15,000
10,000
Eon
5,000
1,000
0
10
30
50
70
90
110
130
ID (A)
FIGURE 16, SWITCHING ENERGY vs CURRENT
0
0
5
10 15 20 25 30 35 40 45 50
RG, GATE RESISTANCE (Ohms)
FIGURE 17, SWITCHING ENERGY VS. GATE RESISTANCE
Typical Performance Curves
APT50M60JVR
10%
90%
Gate Voltage
Gate Voltage
TJ125°C
td(off)
td(on)
Drain Current
90%
90%
tr
T 125°C
J
Drain Voltage
tf
10%
0
5%
5%
10%
Drain Voltage
Switching Energy
Switching Energy
Drain Current
Figure 19, Turn-off Switching Waveforms and Definitions
Figure 18, Turn-on Switching Waveforms and Definitions
APT60DF60
V DD
IC
V CE
G
D.U.T.
Figure 20, Inductive Switching Test Circuit
SOT-227 (ISOTOP®) Package Outline
11.8 (.463)
12.2 (.480)
31.5 (1.240)
31.7 (1.248)
25.2 (0.992)
0.75 (.030) 12.6 (.496) 25.4 (1.000)
0.85 (.033) 12.8 (.504)
4.0 (.157)
4.2 (.165)
(2 places)
3.3 (.129)
3.6 (.143)
14.9 (.587)
15.1 (.594)
1.95 (.077)
2.14 (.084)
* Source
30.1 (1.185)
30.3 (1.193)
Drain
* Source terminals are shorted
internally. Current handling
capability is equal for either
Source terminal.
38.0 (1.496)
38.2 (1.504)
* Source
Gate
Dimensions in Millimeters and (Inches)
ISOTOP® is a Registered Trademark of SGS Thomson.
APT’s products are covered by one or more of U.S.patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522
5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 and foreign patents. US and Foreign patents pending. All Rights Reserved.
5-2004
r = 4.0 (.157)
(2 places)
W=4.1 (.161)
W=4.3 (.169)
H=4.8 (.187)
H=4.9 (.193)
(4 places)
050-7250 Rev A
7.8 (.307)
8.2 (.322)
8.9 (.350)
9.6 (.378)
Hex Nut M4
(4 places)