New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor High-Voltage Schottky Rectifier FEATURES • Trench MOS Schottky technology TMBS® TO-220AC ITO-220AC • Lower power losses, high efficiency • Low forward voltage drop • High forward surge capability • High frequency operation 2 2 1 1 MBR1090 MBR10100 MBRF1090 MBRF10100 PIN 1 PIN 1 CASE PIN 2 PIN 2 TO-263AB TYPICAL APPLICATIONS For use in high frequency rectifier of switching mode power supplies, freewheeling diodes, dc-to-dc converters or polarity protection application. 2 1 MBRB1090 MBRB10100 PIN 2 • Solder bath temperature 275 °C maximum, 10 s, per JESD 22-B106 (for TO-220AC and ITO-220AC package) • Compliant to RoHS directive 2002/95/EC and in accordance to WEEE 2002/96/EC K PIN 1 • Meets MSL level 1, per J-STD-020, LF maximum peak of 245 °C (for TO-263AB package) K HEATSINK PRIMARY CHARACTERISTICS IF(AV) 10 A VRRM 90 V, 100 V IFSM 150 A VF 0.65 V TJ max. 150 °C MECHANICAL DATA Case: TO-220AC, ITO-220AC, TO-263AB Molding compound meets UL 94 V-0 flammability rating Base P/N-E3 - RoHS compliant, commercial grade Terminals: Matte tin plated leads, solderable per J-STD-002 and JESD 22-B102 E3 suffix meets JESD 201 class 1A whisker test Polarity: As marked Mounting Torque: 10 in-lbs maximum MAXIMUM RATINGS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR1090 MBR10100 UNIT Maximum repetitive peak reverse voltage VRRM 90 100 V Working peak reverse voltage VRWM 90 100 V Maximum DC blocking voltage VDC 90 Maximum average forward rectified current at TC = 133 °C IF(AV) 10 A Peak forward surge current 8.3 ms single half sine-wave superimposed on rated load IFSM 150 A Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH EAS 130 mJ Peak repetitive reverse current at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C IRRM 0.5 A Voltage rate of change (rated VR) dV/dt 10 000 V/µs Isolation voltage (ITO-220AC only) From terminal to heatsink t = 1 min VAC 1500 V TJ, TSTG - 65 to + 150 °C Operating junction and storage temperature range Document Number: 89034 Revision: 24-Jun-09 100 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] V www.vishay.com 1 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER TEST CONDITIONS Maximum instantaneous forward voltage (1) IF = 10 A IF = 10 A IF = 20 A Maximum reverse current at working peak reverse voltage (2) SYMBOL VALUE UNIT TC = 25 °C TC = 125 °C TC = 125 °C VF 0.80 0.65 0.75 V TJ = 25 °C TJ = 100 °C IR 100 6.0 µA mA Notes (1) Pulse test: 300 µs pulse width, 1 % duty cycle (2) Pulse test: Pulse width ≤ 40 ms THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted) PARAMETER SYMBOL MBR MBRF MBRB UNIT RθJA RθJC 60 2.0 3.5 60 2.0 °C/W Typical thermal resistance ORDERING INFORMATION (Example) PACKAGE UNIT WEIGHT (g) PACKAGE CODE BASE QUANTITY DELIVERY MODE TO-220AC MBR10100-E3/4W PREFERRED P/N 1.845 4W 50/tube Tube ITO-220AC MBRF10100-E3/4W 1.661 4W 50/tube Tube TO-263AB MBRB10100-E3/4W 1.384 4W 50/tube Tube TO-263AB MBRB10100-E3/8W 1.384 8W 800/reel Tape and reel RATINGS AND CHARACTERISTICS CURVES (TA = 25 °C unless otherwise noted) 10 160 Peak Forward Surge Current (A) Average Forward Current (A) Resistive or Inductive Load 8 6 4 2 TJ = TJ max. 8.3 ms Single Half Sine-Wave 140 120 100 80 60 40 0 50 0 100 150 1 10 100 Case Temperature (°C) Number of Cycles at 60 Hz Figure 1. Forward Current Derating Curve Figure 2. Maximum Non-Repetitive Peak Forward Surge Current www.vishay.com 2 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89034 Revision: 24-Jun-09 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor 100 Transient Thermal Impedance (°C/W) Instantaneous Forward Current (A) 100 TJ = 150 °C 10 TJ = 125 °C 1 0.1 TJ = 25 °C 0.01 0 0.1 0.2 0.3 0.4 0.5 0.7 0.8 0.9 10 1 MBR(B) 0.1 0.01 1.0 0.1 1 100 10 Instantaneous Forward Voltage (V) t - Pulse Duration (s) Figure 3. Typical Instantaneous Forward Characteristics Figure 6. Typical Transient Thermal Impedance 100 10 TJ = 150 °C Transient Thermal Impedance (°C/W) Instantaneous Reverse Current (mA) 0.6 Junction to Case 10 TJ = 125 °C 1 0.1 0.01 TJ = 25 °C 0.001 10 20 30 40 60 50 70 80 90 100 Junction to Case 1 0.1 0.01 MBRF 0.001 0.1 1 10 100 Percent of Rated Peak Reverse Voltage (%) t - Pulse Duration (s) Figure 4. Typical Reverse Characteristics Figure 7. Typical Transient Thermal Impedance Junction Capacitance (pF) 10 000 TJ = 25 °C f = 1.0 MHz Vsig = 50 mVp-p 1000 100 10 1 10 100 Reverse Voltage (V) Figure 5. Typical Junction Capacitance Document Number: 89034 Revision: 24-Jun-09 For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] www.vishay.com 3 New Product MBR(F,B)1090 & MBR(F,B)10100 Vishay General Semiconductor PACKAGE OUTLINE DIMENSIONS in inches (millimeters) ITO-220AC TO-220AC 0.404 (10.26) 0.384 (9.75) 0.415 (10.54)MAX. 0.370 (9.40) 0.360 (9.14) 0.154 (3.91) DIA. 0.148 (3.74) 0.113 (2.87) 0.103 (2.62) 0.145 (3.68) 0.135 (3.43) 1 PIN 2 0.560 (14.22) 0.530 (13.46) 7° REF. 0.057 (1.45) 0.045 (1.14) CASE 0.037 (0.94) 0.027(0.68) 0.205 (5.20) 0.195 (4.95) 0.110 (2.79) 0.100 (2.54) 0.035 (0.89) 0.025 (0.64) 0.025 (0.64) 0.015 (0.38) 0.022 (0.56) 0.014 (0.36) 7° REF. 0.350 (8.89) 0.330 (8.38) 0.191 (4.85) 0.171 (4.35) 0.560 (14.22) 0.530 (13.46) PIN 1 0.135 (3.43) DIA. 0.122 (3.08) DIA. 2 1 0.110 (2.79) 0.100 (2.54) PIN 2 0.105 (2.67) 0.095 (2.41) 0.671 (17.04) 0.651 (16.54) PIN 1.148 (29.16) 1.118 (28.40) 0.160 (4.06) 0.140 (3.56) 0.057 (1.45) 0.045 (1.14) 0.140 (3.56) DIA. 0.125 (3.17) DIA. 0.600 (15.24) 0.580 (14.73) 0.603 (15.32) 0.573 (14.55) 0.350 (8.89) 0.330 (8.38) 7° REF. 0.076 (1.93) REF. 45° REF. 0.635 (16.13) 0.625 (15.87) 0.190 (4.83) 0.170 (4.32) 0.110 (2.79) 0.100 (2.54) 0.076 (1.93) REF. 0.185 (4.70) 0.175 (4.44) 0.055 (1.39) 0.045 (1.14) 0.028 (0.71) 0.020 (0.51) 0.205 (5.21) 0.195 (4.95) TO-263AB 0.41 1 (10.45) 0.380 (9.65) 0.190 (4.83) 0.160 (4.06) 0.245 (6.22) MIN K 0.360 (9.14) 0.320 (8.13) 1 K 2 0.624 (15.85) 0.591(15.00) 0.055 (1.40) 0.045 (1.14) 0 to 0.01 (0 to 0.254) 0.105 (2.67) 0.095 (2.41) www.vishay.com 4 0.205 (5.20) 0.195 (4.95) 0.42 MIN. (10.66) 0.33 (8.38) MIN. 0.055 (1.40) 0.047 (1.19) 0.110 (2.79) 0.090 (2.29) 0.021 (0.53) 0.014 (0.36) 0.037 (0.940) 0.027 (0.686) Mounting Pad Layout 0.140 (3.56) 0.110 (2.79) 0.670 (17.02) 0.591 (15.00) 0.15 (3.81) MIN. 0.08 MIN. (2.032) 0.105 (2.67) (0.095) (2.41) For technical questions within your region, please contact one of the following: [email protected], [email protected], [email protected] Document Number: 89034 Revision: 24-Jun-09 Legal Disclaimer Notice Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. 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