Vishay MBR1090 High-voltage schottky rectifier Datasheet

New Product
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
High-Voltage Schottky Rectifier
FEATURES
• Trench MOS Schottky technology
TMBS®
TO-220AC
ITO-220AC
• Lower power losses, high efficiency
• Low forward voltage drop
• High forward surge capability
• High frequency operation
2
2
1
1
MBR1090
MBR10100
MBRF1090
MBRF10100
PIN 1
PIN 1
CASE
PIN 2
PIN 2
TO-263AB
TYPICAL APPLICATIONS
For use in high frequency rectifier of switching mode
power supplies, freewheeling diodes, dc-to-dc
converters or polarity protection application.
2
1
MBRB1090
MBRB10100
PIN 2
• Solder bath temperature 275 °C maximum, 10 s,
per JESD 22-B106 (for TO-220AC and ITO-220AC
package)
• Compliant to RoHS directive 2002/95/EC and in
accordance to WEEE 2002/96/EC
K
PIN 1
• Meets MSL level 1, per J-STD-020, LF maximum
peak of 245 °C (for TO-263AB package)
K
HEATSINK
PRIMARY CHARACTERISTICS
IF(AV)
10 A
VRRM
90 V, 100 V
IFSM
150 A
VF
0.65 V
TJ max.
150 °C
MECHANICAL DATA
Case: TO-220AC, ITO-220AC, TO-263AB
Molding compound meets UL 94 V-0 flammability
rating
Base P/N-E3 - RoHS compliant, commercial grade
Terminals: Matte tin plated leads, solderable per
J-STD-002 and JESD 22-B102
E3 suffix meets JESD 201 class 1A whisker test
Polarity: As marked
Mounting Torque: 10 in-lbs maximum
MAXIMUM RATINGS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR1090
MBR10100
UNIT
Maximum repetitive peak reverse voltage
VRRM
90
100
V
Working peak reverse voltage
VRWM
90
100
V
Maximum DC blocking voltage
VDC
90
Maximum average forward rectified current at TC = 133 °C
IF(AV)
10
A
Peak forward surge current 8.3 ms single half sine-wave
superimposed on rated load
IFSM
150
A
Non-repetitive avalanche energy at TJ = 25 °C, L = 60 mH
EAS
130
mJ
Peak repetitive reverse current
at tp = 2 µs, 1 kHz, TJ = 38 °C ± 2 °C
IRRM
0.5
A
Voltage rate of change (rated VR)
dV/dt
10 000
V/µs
Isolation voltage (ITO-220AC only)
From terminal to heatsink t = 1 min
VAC
1500
V
TJ, TSTG
- 65 to + 150
°C
Operating junction and storage temperature range
Document Number: 89034
Revision: 24-Jun-09
100
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
V
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New Product
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
ELECTRICAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
TEST CONDITIONS
Maximum instantaneous forward voltage (1)
IF = 10 A
IF = 10 A
IF = 20 A
Maximum reverse current at working peak
reverse voltage (2)
SYMBOL
VALUE
UNIT
TC = 25 °C
TC = 125 °C
TC = 125 °C
VF
0.80
0.65
0.75
V
TJ = 25 °C
TJ = 100 °C
IR
100
6.0
µA
mA
Notes
(1) Pulse test: 300 µs pulse width, 1 % duty cycle
(2)
Pulse test: Pulse width ≤ 40 ms
THERMAL CHARACTERISTICS (TC = 25 °C unless otherwise noted)
PARAMETER
SYMBOL
MBR
MBRF
MBRB
UNIT
RθJA
RθJC
60
2.0
3.5
60
2.0
°C/W
Typical thermal resistance
ORDERING INFORMATION (Example)
PACKAGE
UNIT WEIGHT (g)
PACKAGE CODE
BASE QUANTITY
DELIVERY MODE
TO-220AC
MBR10100-E3/4W
PREFERRED P/N
1.845
4W
50/tube
Tube
ITO-220AC
MBRF10100-E3/4W
1.661
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/4W
1.384
4W
50/tube
Tube
TO-263AB
MBRB10100-E3/8W
1.384
8W
800/reel
Tape and reel
RATINGS AND CHARACTERISTICS CURVES
(TA = 25 °C unless otherwise noted)
10
160
Peak Forward Surge Current (A)
Average Forward Current (A)
Resistive or Inductive Load
8
6
4
2
TJ = TJ max.
8.3 ms Single Half Sine-Wave
140
120
100
80
60
40
0
50
0
100
150
1
10
100
Case Temperature (°C)
Number of Cycles at 60 Hz
Figure 1. Forward Current Derating Curve
Figure 2. Maximum Non-Repetitive Peak Forward Surge Current
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For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89034
Revision: 24-Jun-09
New Product
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
100
Transient Thermal Impedance (°C/W)
Instantaneous Forward Current (A)
100
TJ = 150 °C
10
TJ = 125 °C
1
0.1
TJ = 25 °C
0.01
0
0.1
0.2
0.3
0.4
0.5
0.7
0.8
0.9
10
1
MBR(B)
0.1
0.01
1.0
0.1
1
100
10
Instantaneous Forward Voltage (V)
t - Pulse Duration (s)
Figure 3. Typical Instantaneous Forward Characteristics
Figure 6. Typical Transient Thermal Impedance
100
10
TJ = 150 °C
Transient Thermal Impedance (°C/W)
Instantaneous Reverse Current (mA)
0.6
Junction to Case
10
TJ = 125 °C
1
0.1
0.01
TJ = 25 °C
0.001
10
20
30
40
60
50
70
80
90
100
Junction to Case
1
0.1
0.01
MBRF
0.001
0.1
1
10
100
Percent of Rated Peak Reverse Voltage (%)
t - Pulse Duration (s)
Figure 4. Typical Reverse Characteristics
Figure 7. Typical Transient Thermal Impedance
Junction Capacitance (pF)
10 000
TJ = 25 °C
f = 1.0 MHz
Vsig = 50 mVp-p
1000
100
10
1
10
100
Reverse Voltage (V)
Figure 5. Typical Junction Capacitance
Document Number: 89034
Revision: 24-Jun-09
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
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New Product
MBR(F,B)1090 & MBR(F,B)10100
Vishay General Semiconductor
PACKAGE OUTLINE DIMENSIONS in inches (millimeters)
ITO-220AC
TO-220AC
0.404 (10.26)
0.384 (9.75)
0.415 (10.54)MAX.
0.370 (9.40)
0.360 (9.14)
0.154 (3.91)
DIA.
0.148 (3.74)
0.113 (2.87)
0.103 (2.62)
0.145 (3.68)
0.135 (3.43)
1
PIN
2
0.560 (14.22)
0.530 (13.46)
7° REF.
0.057 (1.45)
0.045 (1.14)
CASE
0.037 (0.94)
0.027(0.68)
0.205 (5.20)
0.195 (4.95)
0.110 (2.79)
0.100 (2.54)
0.035 (0.89)
0.025 (0.64)
0.025 (0.64)
0.015 (0.38)
0.022 (0.56)
0.014 (0.36)
7° REF.
0.350 (8.89)
0.330 (8.38)
0.191 (4.85)
0.171 (4.35)
0.560 (14.22)
0.530 (13.46)
PIN 1
0.135 (3.43) DIA.
0.122 (3.08) DIA.
2
1
0.110 (2.79)
0.100 (2.54)
PIN 2
0.105 (2.67)
0.095 (2.41)
0.671 (17.04)
0.651 (16.54)
PIN
1.148 (29.16)
1.118 (28.40)
0.160 (4.06)
0.140 (3.56)
0.057 (1.45)
0.045 (1.14)
0.140 (3.56) DIA.
0.125 (3.17) DIA.
0.600 (15.24)
0.580 (14.73)
0.603 (15.32)
0.573 (14.55)
0.350 (8.89)
0.330 (8.38)
7° REF.
0.076 (1.93) REF.
45° REF.
0.635 (16.13)
0.625 (15.87)
0.190 (4.83)
0.170 (4.32)
0.110 (2.79)
0.100 (2.54)
0.076 (1.93) REF.
0.185 (4.70)
0.175 (4.44)
0.055 (1.39)
0.045 (1.14)
0.028 (0.71)
0.020 (0.51)
0.205 (5.21)
0.195 (4.95)
TO-263AB
0.41
1 (10.45)
0.380 (9.65)
0.190 (4.83)
0.160 (4.06)
0.245 (6.22)
MIN
K
0.360 (9.14)
0.320 (8.13)
1
K
2
0.624 (15.85)
0.591(15.00)
0.055 (1.40)
0.045 (1.14)
0 to 0.01 (0 to 0.254)
0.105 (2.67)
0.095 (2.41)
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0.205 (5.20)
0.195 (4.95)
0.42
MIN.
(10.66)
0.33
(8.38) MIN.
0.055 (1.40)
0.047 (1.19)
0.110 (2.79)
0.090 (2.29)
0.021 (0.53)
0.014 (0.36)
0.037 (0.940)
0.027 (0.686)
Mounting Pad Layout
0.140 (3.56)
0.110 (2.79)
0.670 (17.02)
0.591 (15.00)
0.15
(3.81) MIN.
0.08
MIN.
(2.032)
0.105 (2.67)
(0.095) (2.41)
For technical questions within your region, please contact one of the following:
[email protected], [email protected], [email protected]
Document Number: 89034
Revision: 24-Jun-09
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Disclaimer
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Document Number: 91000
Revision: 11-Mar-11
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