MBR1035-MBR1060 MBR1035 - MBR1060 Features • • • • • • Low power loss, high efficiency. High surge capacity. For use in low voltage, high frequency inverters, free wheeling, and polarity protection applications. Metal silicon junction, majority carrier conduction. High current capacity, low forward voltage drop. Guard ring for over voltage protection. PIN 1 + + CASE PIN 2 CASE Positive 1 2 TO-220AC Schottky Rectifiers Absolute Maximum Ratings* Symbol TA = 25°C unless otherwise noted Value Parameter Units 1035 1045 1050 1060 35 45 50 60 VRRM Maximum Repetitive Reverse Voltage IF(AV) Average Rectified Forward Current IFSM Non-repetitive Peak Forward Surge Current 8.3 ms Single Half-Sine-Wave Storage Temperature Range 150 A -65 to +175 °C Operating Junction Temperature -65 to +150 °C Tstg TJ 10 V A *These ratings are limiting values above which the serviceability of any semiconductor device may be impaired. Thermal Characteristics Symbol Parameter Value Units PD Power Dissipation 2.0 W RθJA Thermal Resistance, Junction to Ambient 60 °C/W RθJL Thermal Resistance, Junction to Lead 2.0 °C/W Electrical Characteristics Symbol TA = 25°C unless otherwise noted Device Parameter 1035 VF IR IRRM Forward Voltage IF = 10 A, TC = 25°C IF = 10 A, TC = 125°C IF = 20 A, TC = 25°C IF = 20 A, TC = 125°C Reverse Current @ rated VR TA = 25°C TA = 125°C Peak Repetitive Reverse Surge Current 2.0 us Pulse Width, f = 1.0 KHz 2001 Fairchild Semiconductor Corporation 1045 Units 1050 0.57 0.84 0.72 1060 0.80 0.70 0.95 0.85 0.1 15 1.0 V V V V mA mA 0.5 A MBR1035 - MBR1060, Rev. C (continued) 12 10 MBR1035-MBR1045 8 MBR1050-MBR1060 SINGLE PHASE HALF WAVE 60HZ RESISTIVE OR INDUCTIVE LOAD .375" (9.00mm) LOAD LENGTHS 6 4 2 0 0 25 50 75 100 125 Ambient Temperature [ºC] 150 175 Peak Forward Surge Current, IFSM [A] Average Rectified Forward Current, IF [A] Typical Characteristics Figure 1. Forward Current Derating Curve Reverse Current, IR [mA] Forward Current, IF [A] 125 100 75 50 25 0.1 20 10 TA = 25º C 10 MBR1035-MBR1045 1 MBR1050-MBR1060 0.1 1 10 Number of Cycles at 60Hz 0 0.2 0.4 0.6 0.8 Forward Voltage, VF [V] T A = 125 º C 1 MBR1050-MBR1060 TA = 75º C 0.1 MBR1035-MBR1045 0.01 TA = 25º C MBR1050-MBR1060 1 0.001 1.2 Figure 3. Forward Voltage Characteristics 0 20 40 60 80 100 120 Percent of Rated Peak Reverse Voltage [%] Figure 4. Reverse Current vs Reverse Voltage 100 2000 1000 MBR1035-MBR1045 500 MBR1050-MBR1060 200 1 10 Reverse Voltage, VR [V] Figure 5. Total Capacitance 2001 Fairchild Semiconductor Corporation 100 Transient Thermal Impedance [ºC/W]º 5000 100 0.1 100 MBR1035-MBR1045 µS Pulse Width = 300µ 2% Duty Cycle 0.01 Total Capacitance, CT [pF] 150 Figure 2. Non-Repetitive Surge Current 50 T A = 150 ºC 175 10 1 0.1 0.01 0.1 1 10 Pulse Duration [s] 100 Figure 6. Thermal Impedance Characteristics MBR1035 - MBR1060, Rev. 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PRODUCT STATUS DEFINITIONS Definition of Terms Datasheet Identification Product Status Definition Advance Information Formative or In Design This datasheet contains the design specifications for product development. Specifications may change in any manner without notice. Preliminary First Production This datasheet contains preliminary data, and supplementary data will be published at a later date. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. No Identification Needed Full Production This datasheet contains final specifications. Fairchild Semiconductor reserves the right to make changes at any time without notice in order to improve design. Obsolete Not In Production This datasheet contains specifications on a product that has been discontinued by Fairchild semiconductor. The datasheet is printed for reference information only. Rev. H4