Isahaya ISA1989AU1 Small-signal transistor Datasheet

〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
OUTLINE DRAWING
DESCRIPTION
Unit:mm
ISA1989AU1 is a ultra super mini package resin sealed
1.6
silicon PNP epitaxial transistor,
0.4
It is designed for low frequency voltage application.
0.8
0.4
0.3
0.5
②
1.6
1.0
①
0.5
.
FEATURE
③
● Small collector to emitter saturation voltage.
VCE(sat)=-0.3V max(@ I C=-30mA ,IB=-1.5mA)
0.15
0~0.1
●Super mini package for easy mounting
0.55
0.7
●Excellent linearity of DC forward gain.
APPLICATION
For Hybrid IC,small type machine low frequency voltage
JEITA:SC-75A
Amplify application.
TERMINAL CONNECTER
①:BASE
②:EMITTER
③:COLLECTOR
MAXIMUM RATINGS(Ta=25℃)
Symbol
.
Parameter
Ratings
Unit
VCBO
Collector to Base voltage
-50
V
VCEO
Collector to Emitter voltage
-50
V
VEBO
Emitter to Base voltage
-6
V
Collector current
-100
mA
Pc
Collector dissipation
150
mW
Tj
Junction temperature
+150
℃
Tstg
Storage temperature
-55~+150
℃
I
O
MARKING
. TR
ELECTRICAL CHARACTERISTICS(Ta=25℃)
Parameter
C to E break down voltage
Symbol
V(BR)CEO
Limits
Test conditions
Unit
Min
Typ
Max
-50
-
-
=-50V, I E=0mA
-
-
-0.5
μA
=-4V, I C=0mA
-
-
-0.5
μA
I C=-100μA ,R
BE
=∞
V
Collector cut off current
ICBO
V
CB
Emitter cut off current
IEBO
V
EB
DC forward current gain
hFE
V
CE
120
-
560
DC forward current gain
hFE
V
CE=-6V, I C=-0.1mA
70
-
-
I C=-30mA ,IB=-1.5mA
-
-
-0.3
V
-
200
-
MHz
-
2.5
-
pF
C to E Saturation Vlotage
Gain bandwidth product
Collector output capacitance
VCE(sat)
=-6V, I C=-1mA
fT
V
CE
Cob
V
CE=-6V, I E=0,f=1MHz
※
=-6V, I E=10mA
※) It shows hFE classification in below table.
Item
Q
R
S
hFE item
120~270
180~390
270~560
ISAHAYA ELECTRONICS CORPORATION
〈SMALL-SIGNAL TRANSISTOR〉
ISA1989AU1
FOR LOW FREQUENCY AMPLIFY APPLICATION
SILICON PNP EPITAXIAL TYPE(ULTRA SUPER MINI TYPE)
TYPICAL CHARACTERISTICS
Collector dissipation-AMBIENT TEMPERTURE
GAIN BAND WIDTH PRODUCT VS. EMITTER CURRENT
400
200
GAIN BAND WIDTH PRODUCT fT[MHz]
150
100
50
300
200
100
0
0
25
50
75
100
AMBIENT TEMPERTURE Ta (℃)
125
150
0
0.1
1
10
100
EMITTER CURRENT IE[mA]
DC FORWARD CURRENT GAIN VS. COLLECTOR CURRENT
COLLECTOR OUTPUT CAPACITANCE
VS. COLLECTOR TO BASE VOLTAGE
1000
100
COLLECTOR OUTPUT CAPACITANCE Cob[pF]
DC FORWARD CURRENT GAIN hFE
VCE=-6V
100
10
-0.1
-1
-10
-100
-1000
COLLECTOR CURRENT IC[mA]
10
1
0
-0.1
-1
COMMON EMITTER TRANSFER
VCE=-6V
-40
-30
-20
-10
-0
-0.0
-0.2
-0.4
-0.6
-0.8
-10
COLLECTOR TO BASE VOLTAGE VCB[V]
-50
COLLECTOR CURRENT IC[mA]
Collector dissipation Pc (mW)
VCE=-6V
-1.0
BASE TO EMITTER VOLTAGE VBE[V]
ISAHAYA ELECTRONICS CORPORATION
-100
Marketing division, Marketing planning department
6-41 Tsukuba, Isahaya, Nagasaki, 854-0065 Japan
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Apr.2007
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