IXYS IXYN82N120C3H1 High-speed igbt for 20-50 khz switching Datasheet

IXYN82N120C3H1
1200V XPTTM IGBT
GenX3TM w/ Diode
VCES
IC110
VCE(sat)
tfi(typ)
High-Speed IGBT
for 20-50 kHz Switching
=
=
≤
=
1200V
46A
3.2V
93ns
SOT-227B, miniBLOC
E153432
Symbol
Test Conditions
Ec
Maximum Ratings
VCES
VCGR
TJ = 25°C to 150°C
TJ = 25°C to 150°C, RGE = 1MΩ
VGES
VGEM
Continuous
Transient
IC25
IC110
IF110
ICM
TC
TC
TC
TC
IA
EAS
TC = 25°C
TC = 25°C
SSOA
(RBSOA)
VGE = 15V, TVJ = 125°C, RG = 2Ω
Clamped Inductive Load
PC
TC = 25°C
= 25°C (Chip Capability)
= 110°C
= 110°C
= 25°C, 1ms
50/60Hz
IISOL ≤ 1mA
Md
Mounting Torque
Terminal Connection Torque
V
V
±20
±30
V
V
Ec
C
105
46
42
320
A
A
A
A
41
800
A
mJ
ICM = 164
@VCE ≤ VCES
A
500
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
z
2500
3000
V~
V~
z
1.5/13
1.3/11.5
Nm/lb.in.
Nm/lb.in.
30
g
TJ
TJM
Tstg
VISOL
1200
1200
G
t = 1min
t = 1s
Weight
G = Gate, C = Collector, E = Emitter
c either emitter terminal can be used as
Main or Kelvin Emitter
Features
z
z
z
z
z
z
Advantages
z
z
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
BVCES
IC
= 250μA, VGE = 0V
1200
VGE(th)
IC
= 250μA, VCE = VGE
3.0
ICES
VCE = VCES, VGE = 0V
V
5.0
50 μA
3 mA
TJ = 125°C
IGES
VCE = 0V, VGE = ±20V
VCE(sat)
IC
= 82A, VGE = 15V, Note 1
TJ = 125°C
© 2013 IXYS CORPORATION, All Rights Reserved
V
2.75
3.50
nA
3.20
V
V
High Power Density
Low Gate Drive Requirement
Applications
z
z
z
z
z
±100
Optimized for Low Switching Losses
Square RBSOA
Isolation Voltage 2500V~
Anti-Parallel Ultra Fast Diode
Positive Thermal Coefficient of
Vce(sat)
Avalanche Rated
High Current Handling Capability
International Standard Package
z
z
z
High Frequency Power Inverters
UPS
Motor Drives
SMPS
PFC Circuits
Battery Chargers
Welding Machines
Lamp Ballasts
DS100352D(03/13)
IXYN82N120C3H1
Symbol Test Conditions
(TJ = 25°C Unless Otherwise Specified)
Characteristic Values
Min.
Typ.
Max.
gfs
30
IC = 60A, VCE = 10V, Note 1
Cies
Coes
Cres
VCE = 25V, VGE = 0V, f = 1MHz
Qg(on)
Qge
Qgc
IC = 75A, VGE = 15V, VCE = 0.5 • VCES
td(on)
tri
Eon
td(off)
tfi
Eoff
td(on)
tri
Eon
td(off)
tfi
Eoff
Inductive load, TJ = 25°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
Inductive load, TJ = 125°C
IC = 80A, VGE = 15V
VCE = 0.5 • VCES, RG = 2Ω
Note 2
RthJC
RthCS
SOT-227B miniBLOC (IXYN)
50
S
4060
285
110
pF
pF
pF
215
26
84
nC
nC
nC
29
78
4.95
192
93
2.78
ns
ns
mJ
ns
ns
mJ
280
5.00
29
90
7.45
200
95
3.70
ns
ns
mJ
ns
ns
mJ
0.05
0.25 °C/W
°C/W
Reverse Diode (FRED)
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
VF
IRM
trr
IF = 60A, VGE = 0V, Note 1
IF = 60A, VGE = 0V,
-diF/dt = 700A/μs, VR = 600V
Characteristic Values
Min.
Typ.
Max.
2.7
TJ = 125°C
TJ = 125°C
1.9
V
V
41
A
420
ns
RthJC
Notes:
0.42 °C/W
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
2. Switching times & energy losses may increase for higher VCE(clamp), TJ or RG.
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXYN82N120C3H1
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
300
160
VGE = 15V
13V
11V
10V
9V
140
250
80
11V
10V
9V
200
8V
100
IC - Amperes
IC - Amperes
120
VGE = 15V
13V
12V
7V
60
150
8V
100
7V
6V
40
50
20
6V
5V
0
5V
0
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
0
5
10
15
20
25
30
VCE - Volts
VCE - Volts
Fig. 4. Dependence of VCE(sat) on
Junction Temperature
Fig. 3. Output Characteristics @ T J = 125ºC
2.2
160
VGE = 15V
13V
11V
10V
9V
IC - Amperes
120
VGE = 15V
2.0
I
1.8
VCE(sat) - Normalized
140
8V
100
80
7V
60
40
20
1.4
I
1.2
C
= 82A
I
C
1.0
= 41A
0.6
5V
0
0
1
2
3
4
5
0.4
-50
6
-25
0
25
VCE - Volts
50
75
100
125
150
TJ - Degrees Centigrade
Fig. 5. Collector-to-Emitter Voltage vs.
Gate-to-Emitter Voltage
Fig. 6. Input Admittance
160
8.5
TJ = 25ºC
140
7.5
120
5.5
I
C
IC - Amperes
6.5
VCE - Volts
= 164A
1.6
0.8
6V
C
= 164A
4.5
82A
3.5
100
80
60
TJ = 125ºC
25ºC
- 40ºC
40
2.5
20
41A
1.5
0
5
6
7
8
9
10
11
12
VGE - Volts
© 2013 IXYS CORPORATION, All Rights Reserved
13
14
15
3.0
3.5
4.0
4.5
5.0
5.5
VGE - Volts
6.0
6.5
7.0
7.5
8.0
IXYN82N120C3H1
Fig. 8. Gate Charge
Fig. 7. Transconductance
80
16
TJ = - 40ºC
70
60
I C = 82A
I G = 10mA
12
25ºC
50
VGE - Volts
g f s - Siemens
VCE = 600V
14
125ºC
40
30
10
8
6
20
4
10
2
0
0
0
20
40
60
80
100
120
140
0
160
20
40
60
IC - Amperes
80
100
120
140
160
180
200
220
QG - NanoCoulombs
Fig. 10. Reverse-Bias Safe Operating Area
Fig. 9. Capacitance
180
10,000
140
1,000
120
IC - Amperes
Capacitance - PicoFarads
160
Cies
Coes
100
80
60
100
Cres
f = 1 MHz
10
0
5
10
15
20
25
30
35
40
TJ = 150ºC
20
RG = 2Ω
dv / dt < 10V / ns
0
200
40
300
400
500
VCE - Volts
600
700
800
900
1000
1100
1200
VCE - Volts
Fig. 11. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
0.1
1
10
IXYN82N120C3H1
Fig. 13. Inductive Switching Energy Loss vs.
Collector Current
Fig. 12. Inductive Switching Energy Loss vs.
Gate Resistance
8
Eon -
Eoff
---
VCE = 600V
6
----
3.5
7
TJ = 125ºC
3.0
6
8
3
6
2
4
1.5
3
2
1.0
2
0
0.5
0
2
4
6
8
10
2.5
5
2.0
4
TJ = 25ºC
= 40A
C
1
12
14
16
40
18
50
60
RG - Ohms
Eoff
Eon
3.5
VCE = 600V
----
RG = 2Ω , VGE = 15V
9
200
8
180
7
160
2.5
5
2.0
4
I C = 40A
780
tfi
td(off) - - - -
3
1.0
0.5
75
100
620
140
540
I
C
= 40A
120
460
100
380
80
300
2
60
1
125
40
4
6
8
240
240
230
200
120
200
80
190
TJ = 25ºC
40
180
0
80
IC - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
18
90
td(off) - - - -
RG = 2Ω , VGE = 15V
260
170
100
160
240
I C = 40A
120
220
I C = 80A
80
200
40
180
0
25
50
75
TJ - Degrees Centigrade
100
160
125
t d(off) - Nanoseconds
210
TJ = 125ºC
70
16
VCE = 600V
220
160
60
14
280
tfi
t d(off) - Nanoseconds
VCE = 600V
50
12
Fig. 17. Inductive Turn-off Switching Times vs.
Junction Temperature
t f i - Nanoseconds
td(off) - - - -
RG = 2Ω , VGE = 15V
40
10
RG - Ohms
280
200
= 80A
140
2
Fig. 16. Inductive Turn-off Switching Times vs.
Collector Current
tfi
C
220
TJ - Degrees Centigrade
240
700
VCE = 600V
I
50
1
100
t d(off) - Nanoseconds
6
I C = 80A
25
90
TJ = 125ºC, VGE = 15V
Eon - MilliJoules
3.0
1.5
80
Fig. 15. Inductive Turn-off Switching Times vs.
Gate Resistance
t f i - Nanoseconds
4.5
4.0
70
IC - Amperes
Fig. 14. Inductive Switching Energy Loss vs.
Junction Temperature
Eoff - MilliJoules
8
VCE = 600V
4
I
t f i - Nanoseconds
9
Eon - MilliJoules
10
Eon - MilliJoules
I C = 80A
Eon
RG = 2Ω , VGE = 15V
4.0
12
5
10
Eoff
4.5
14
TJ = 125ºC , VGE = 15V
Eoff - MilliJoules
7
Eoff - MilliJoules
5.0
16
IXYN82N120C3H1
Fig. 19. Inductive Turn-on Switching Times vs.
Collector Current
Fig. 18. Inductive Turn-on Switching Times vs.
Gate Resistance
160
td(on) - - - -
55
TJ = 125ºC, VGE = 15V
VCE = 600V
120
60
tri
= 80A
40
60
35
40
30
I
C
= 40A
20
100
40
TJ = 125ºC
80
30
TJ = 25ºC
60
20
40
10
t d(on) - Nanoseconds
C
80
t d(on) - Nanoseconds
I
45
50
VCE = 600V
50
100
td(on) - - - -
RG = 2Ω , VGE = 15V
120
t r i - Nanoseconds
140
t r i - Nanoseconds
140
60
tri
25
0
20
20
2
4
6
8
10
12
14
16
40
18
50
60
70
80
90
0
100
IC - Amperes
RG - Ohms
Fig. 20. Inductive Turn-on Switching Times vs.
Junction Temperature
36
140
tri
34
RG = 2Ω , VGE = 15V
VCE = 600V
100
32
80
I
C
= 80A
60
30
28
40
26
I C = 40A
20
0
25
50
75
100
t d(on) - Nanoseconds
t r i - Nanoseconds
120
td(on) - - - -
24
22
125
TJ - Degrees Centigrade
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: IXY_82N120C3(8M)12-13-12-A
IXYN82N120C3H1
Fig. 22. Typ. Reverse Recovery Charge Qrr vs. -diF/dt
Fig. 21. Typ. Forward Characteristics
12
120
11
100
TVJ = 25ºC
VR = 600V
120A
10
TVJ = 125ºC
Q rr - [µC]
80
IF - [A]
TVJ = 125ºC
60
9
60A
8
7
40
6
20
30A
5
0
0
0.5
1
1.5
2
2.5
4
600
3
700
800
VF - Volts
1000
1100
1200
1300
-diF/dt - [A/µs]
Fig. 24. Typ. Recovery Time trr vs. -diF/dt
Fig. 23. Typ. PeakReverse Current IRM vs. -diF/dt
90
700
TVJ = 125ºC
80
900
TVJ = 125ºC
120A
VR = 600V
VR = 600V
600
60
60A
50
30A
Q rr - [µC]
IRM - [A]
70
500
400
120A
40
60A
300
30A
30
20
600
700
800
900
1000
1100
1200
200
600
1300
700
Fig. 25. Typ. Recovery Energy Erec vs. -diF/dt
900
1000
1100
1200
1300
Fig. 26. Maximum Transient Thermal Impedance
4.0
3.6
800
-diF/dt - [A/µs]
-diF/dt - [A/µs]
1
TVJ = 125ºC
120A
VR = 600V
Z(th)JC - ºC / W
Erec - [mJ]
3.2
2.8
60A
2.4
2.0
0.1
30A
1.6
1.2
0.8
600
700
800
900
1000
1100
-diF/dt - [A/µs]
© 2013 IXYS CORPORATION, All Rights Reserved
1200
1300
0.01
0.0001
0.001
0.01
0.1
Pulse Width - Seconds
1
10
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