PD - 96293
IRFP260MPbF
HEXFET® Power MOSFET
Advanced Process Technology
Dynamic dv/dt Rating
l 175°C Operating Temperature
l Fast Switching
l Fully Avalanche Rated
l Ease of Paralleling
l Simple Drive Requirements
l Lead-Free
Description
l
D
l
VDSS = 200V
RDS(on) = 0.04Ω
G
ID = 50A
S
Fifth Generation HEXFETs from International Rectifier utilize advanced processing
techniques to achieve extremely low on-resistance per silicon area. This benefit,
combined with the fast switching speed and ruggedized device design that
HEXFET Power MOSFETs are well known for, provides the designer with an
extremely efficient and reliable device for use in a wide variety of applications.
The TO-247 package is preferred for commercial-industrial applications where
higher power levels preclude the use of TO-220 devices. The TO-247 is similar
but superior to the earlier TO-218 package because of its isolated mounting hole.
TO-247AC
Absolute Maximum Ratings
Parameter
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
TSTG
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current
Repetitive Avalanche Energy
Peak Diode Recovery dv/dt
Operating Junction and
Storage Temperature Range
Soldering Temperature, for 10 seconds
Mounting torque, 6-32 or M3 srew
Max.
Units
50
35
200
300
2.0
±20
560
50
30
10
-55 to +175
A
W
W/°C
V
mJ
A
mJ
V/ns
°C
300 (1.6mm from case )
10 lbf•in (1.1N•m)
Thermal Resistance
Parameter
RθJC
RθCS
RθJA
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Junction-to-Case
Case-to-Sink, Flat, Greased Surface
Junction-to-Ambient
Typ.
Max.
Units
–––
0.24
–––
0.50
–––
40
°C/W
1
03/01/10
IRFP260MPbF
Electrical Characteristics @ TJ = 25°C (unless otherwise specified)
RDS(on)
VGS(th)
gfs
Parameter
Drain-to-Source Breakdown Voltage
Breakdown Voltage Temp. Coefficient
Static Drain-to-Source On-Resistance
Gate Threshold Voltage
Forward Transconductance
Qg
Qgs
Qgd
td(on)
tr
td(off)
tf
Gate-to-Source Forward Leakage
Gate-to-Source Reverse Leakage
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Min.
200
–––
–––
2.0
27
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
0.26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
17
60
55
48
IDSS
Drain-to-Source Leakage Current
LD
Internal Drain Inductance
–––
5.0
LS
Internal Source Inductance
–––
13
Ciss
Coss
Crss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
–––
–––
–––
4057
603
161
V(BR)DSS
∆V(BR)DSS/∆TJ
IGSS
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
0.04
Ω
VGS = 10V, ID = 28A
4.0
V
VDS = VGS, ID = 250µA
–––
S
VDS = 50V, ID = 28A
25
VDS = 200V, VGS = 0V
µA
250
VDS = 160V, VGS = 0V, TJ = 150°C
100
VGS = 20V
nA
-100
VGS = -20V
234
ID = 28A
38
nC
VDS = 160V
110
VGS = 10V
–––
VDD = 100V
–––
ID = 28A
ns
–––
RG = 1.8Ω
–––
VGS = 10V
D
Between lead,
–––
6mm (0.25in.)
nH
G
from package
–––
and center of die contact
S
–––
VGS = 0V
–––
pF
VDS = 25V
–––
ƒ = 1.0MHz
Source-Drain Ratings and Characteristics
IS
ISM
VSD
trr
Qrr
ton
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
Forward Turn-On Time
Min. Typ. Max. Units
Conditions
D
MOSFET symbol
––– ––– 50
showing the
A
G
integral reverse
––– ––– 200
S
p-n junction diode.
––– ––– 1.3
V
TJ = 25°C, IS = 28A, VGS = 0V
––– 268 402
ns
TJ = 25°C, IF = 28A
––– 1.9 2.8
µC di/dt = 100A/µs
Intrinsic turn-on time is negligible (turn-on is dominated by LS+LD)
Notes:
Repetitive rating; pulse width limited by
ISD ≤ 28A, di/dt ≤ 486A/µs, VDD ≤ V(BR)DSS,
Starting TJ = 25°C, L = 1.5mH
Pulse width ≤ 400µs; duty cycle ≤ 2%.
max. junction temperature.
TJ ≤ 175°C
RG = 25Ω, IAS = 28A.
2
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IRFP260MPbF
1000
1000
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
VGS
15V
10V
8.0V
7.0V
6.0V
5.5V
5.0V
BOTTOM 4.5V
TOP
100
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
100
10
4.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
4.5V
10
1
100
I D , Drain-to-Source Current (A)
1000
TJ = 175 ° C
1
4.0
TJ = 25 ° C
V DS = 50V
20µs PULSE WIDTH
5.0
6.0
7.0
8.0
9.0
10.0
VGS , Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
RDS(on) , Drain-to-Source On Resistance
(Normalized)
Fig 1. Typical Output Characteristics
10
1
VDS , Drain-to-Source Voltage (V)
VDS , Drain-to-Source Voltage (V)
100
20µs PULSE WIDTH
TJ = 175 °C
0.1
0.1
3.5
ID = 50A
3.0
2.5
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( ° C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRFP260MPbF
7000
VGS = 0V, f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
6000
Coss = Cds + Cgd
Ciss
5000
4000
Coss
3000
2000
Crss
1000
16
VGS , Gate-to-Source Voltage (V)
C, Capacitance(pF)
8000
0
10
100
V DS= 160V
V DS= 100V
V DS= 40V
12
8
4
0
1
ID = 28A
1000
0
50
100
150
200
QG , Total Gate Charge (nC)
VDS, Drain-to-Source Voltage (V)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
1000
ISD , Reverse Drain Current (A)
OPERATION IN THIS AREA LIMITED
BY RDS(on)
ID , Drain Current (A)
100
TJ = 175° C
10
TJ = 25 ° C
1
0.1
0.2
V GS = 0 V
0.6
1.0
1.4
1.8
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
10us
100
2.2
100us
10
1
1ms
TC = 25 °C
TJ = 175 °C
Single Pulse
1
10ms
10
100
1000
VDS , Drain-to-Source Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRFP260MPbF
VGS
D.U.T.
RG
ID , Drain Current (A)
ID , Drain Current (A)
40
40
+
V
DD
-
10V
30
30
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
20
20
Fig 10a. Switching Time Test Circuit
VDS
10
10
0
RD
VDS
50
50
90%
0
25
25
50
75
100
125
150
50 T 75
125
° C)
, Case100
Temperature
(150
C
TC , Case Temperature ( ° C)
175
175
10%
VGS
td(on)
Fig 9. Maximum Drain Current Vs.
Case Temperature
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response(Z thJC )
1
D = 0.50
0.1
0.20
0.10
0.05
0.02
0.01
SINGLE PULSE
(THERMAL RESPONSE)
PDM
0.01
0.001
0.00001
t1
t2
Notes:
1. Duty factor D = t1 / t 2
2. Peak TJ = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
IRFP260MPbF
L
VDS
DRIVER
EAS , Single Pulse Avalanche Energy (mJ)
1500
15V
TOP
BOTTOM
ID
11A
20A
28A
1000
D.U.T
RG
20V
+
V
- DD
IAS
0.01Ω
tp
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
A
500
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( ° C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
50KΩ
QG
12V
.2µF
.3µF
10 V
QGS
D.U.T.
QGD
+
V
- DS
VGS
VG
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRFP260MPbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
V DD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFETS
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7
IRFP260MPbF
TO-247AC Package Outline (Dimensions are shown in millimeters (inches))
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TO-247AC Part Marking Information
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Data and specifications subject to change without notice.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.03/2010
8
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