DRD3390V40 Rectifier Diode DS6074 April 2012 (LN29429) FEATURES Double Side Cooling High Surge Capability KEY PARAMETERS APPLICATIONS Rectification Free-wheel Diode DC Motor Control Power Supplies Welding Battery Chargers VRRM IF(AV) IFSM 4000V 3388A 62500A VOLTAGE RATINGS Part and Ordering Number Repetitive Peak Voltages VDRM and VDRM V DRD3390V40 DRD3390V39 DRD3390V38 DRD3390V37 DRD3390V36 DRD3390V35 4000 3900 3800 3700 3600 3500 Conditions VRSM = VRRM+100V Lower voltage grades available. ORDERING INFORMATION When ordering, select the required part number shown in the Voltage Ratings selection table. Outline type code: V (See Package Details for further information) Fig. 1 Package outlines For example: DRD3390V37 for a 3700V device Note: Please use the complete part number when ordering and quote this number in any future correspondence relating to your order. 1/7 www.dynexsemi.com DRD3390V40 SEMICONDUCTOR CURRENT RATINGS Tcase = 75°C unless stated otherwise Symbol Parameter Test Conditions Max. Units 4366 A Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 6858 A Continuous (direct) on-state current - 6561 A 2926 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 4596 A Continuous (direct) on-state current - 4066 A Test Conditions Max. Units 3388 A IF Half wave resistive load Tcase = 100°C unless stated otherwise Symbol Parameter Double Side Cooled IF(AV) Mean forward current IF(RMS) RMS value - 5321 A Continuous (direct) on-state current - 4983 A 2232 A IF Half wave resistive load Single Side Cooled (Anode side) IF(AV) Mean forward current IF(RMS) RMS value - 3506 A Continuous (direct) on-state current - 3015 A IF Half wave resistive load 2/7 www.dynexsemi.com DRD3390V40 -3SEMICONDUCTOR SURGE RATINGS Symbol IFSM 2 It IFSM 2 It Parameter Surge (non-repetitive) on-state current 2 I t for fusing Surge (non-repetitive) on-state current Test Conditions Max. Units 10ms half sine, Tcase = 150°C 50.0 kA VR = 50% VRRM - ¼ sine 12.5 MA s 10ms half sine, Tcase = 150°C 62.5 kA VR = 0 19.6 MA s Min. Max. Units 2 I t for fusing 2 2 THERMAL AND MECHANICAL RATINGS Symbol Rth(j-c) Rth(c-h) Parameter Thermal resistance – junction to case Thermal resistance – case to heatsink Test Conditions Double side cooled DC - 0.0075 °C/W Single side cooled Anode DC - 0.015 °C/W Cathode DC - 0.015 °C/W Double side - 0.002 °C/W - 0.004 °C/W On-state (conducting) - 160 °C Reverse (blocking) - 150 °C Clamping force 43kN (with mounting compound) Tvj Virtual junction temperature Single side Tstg Storage temperature range -55 150 °C Fm Clamping force 38.0 47.0 kN 3/7 www.dynexsemi.com DRD3390V40 SEMICONDUCTOR CHARACTERISTICS Symbol Parameter Test Conditions Min. Max. Units VFM Forward voltage At 3000A peak, Tcase = 25°C - 1.15 V IRM Peak reverse current At VDRM, Tcase = 150°C - 250 mA QS Total stored charge IF = 2000A, dIRR/dt =3A/µs - 5000 µC Irr Peak reverse recovery current Tcase = 150°C, VR =100V - 150 A VTO Threshold voltage At Tvj = 150°C - 0.75 V rT Slope resistance At Tvj = 150°C - 0.118 m CURVES 10000 Mean Power Dissipation - (W) 8000 6000 4000 dc 1/2 wave 3 phase sq. 2000 6 phase sq. 0 0 2000 4000 6000 8000 Mean forward current IF(AV)- (A) Fig.2 Maximum (limit) on-state characteristics VTM EQUATION VTM = A + Bln (IT) + C.IT+D.IT Fig.3 Dissipation curves Where A = - 0.15357 B = 0.177571 C = 0.000179 D = - 0.01294 these values are valid for Tj = 150°C for IF 500A to 5000A 4/7 www.dynexsemi.com DRD3390V40 -5SEMICONDUCTOR Fig.4 Total stored charge Fig.5 Maximum reverse recovery current Conduction d.c. Half wave 3 phase 120° 6 phase 60° Fig.6 Surge (non-repetitive) forward current vs time (with 50% VRRM at Tcase 150°C) Effective thermal resistance Junction to case C/W Double side Single side 0.0075 0.015 0.0085 0.016 0.0092 0.01607 0.0119 0.01634 Fig.7 Maximum (limit) transient thermal impedancejunction to case 5/7 www.dynexsemi.com DRD3390V40 SEMICONDUCTOR PACKAGE DETAILS For further package information, please contact Customer Services. All dimensions in mm, unless stated otherwise. DO NOT SCALE. Outline type code: V Nominal weight: 1100g Clamping force: 43kN ± 10% Note: Some packages may be supplied with gate and or tags. 6/7 www.dynexsemi.com DRD3390V40 -7SEMICONDUCTOR IMPORTANT INFORMATION: This publication is provided for information only and not for resale. The products and information in this publication are intended for use by appropriately trained technical personnel. Due to the diversity of product applications, the information contained herein is provided as a general guide only and does not constitute any guarantee of suitability for use in a specific application.The user must evaluate the suitability of the product and the completeness of the product data for the application. The user is responsible for product selection and ensuring all safety and any warning requirements are met. Should additional product information be needed please contact Customer Service. Although we have endeavoured to carefully compile the information in this publication it may contain inaccuracies or typographical errors. The information is provided without any warranty or guarantee of any kind. This publication is an uncontrolled document and is subject to change without notice. When referring to it please ensure that it is the most up to date version and has not been superseded. The products are not intended for use in applications where a failure or malfunction may cause loss of life, injury or damage to property. The user must ensure that appropriate safety precautions are taken to prevent or mitigate the consequences of a product failure or malfunction. The products must not be touched when operating because there is a danger of electrocution or severe burning. Always use protective safety equipment such as appropriate shields for the product and wear safety glasses. Even when disconnected any electric charge remaining in the product must be discharged and allowed to cool before safe handling using protective gloves. Extended exposure to conditions outside the product ratings may affect reliability leading to premature product failure. Use outside the product ratings is likely to cause permanent damage to the product. In extreme conditions, as with all semiconductors, this may include potentially hazardous rupture, a large current to flow or high voltage arcing, resulting in fire or explosion. Appropriate application design and safety precautions should always be followed to protect persons and property. Product Status & Product Ordering: We annotate datasheets in the top right hand corner of the front page, to indicate product status if it is not yet fully approved for production. The annotations are as follows:Target Information: Preliminary Information: No Annotation: This is the most tentative form of information and represents a very preliminary specification. No actual design work on the product has been started. The product design is complete and final characterisation for volume production is in progress.The datasheet represents the product as it is now understood but details may change. The product has been approved for production and unless otherwise notified by Dynex any product ordered will be supplied to the current version of the data sheet prevailing at the time of our order acknowledgement. All products and materials are sold and services provided subject to Dynex’s conditions of sale, which are available on request. Any brand names and product names used in this publication are trademarks, registered trademarks or trade names of their respective owners. HEADQUARTERS OPERATIONS CUSTOMER SERVICE DYNEX SEMICONDUCTOR LIMITED Doddington Road, Lincoln, Lincolnshire, LN6 3LF United Kingdom. Phone: +44 (0) 1522 500500 Fax: +44 (0) 1522 500550 Web: http://www.dynexsemi.com Phone: +44 (0) 1522 502753 / 502901 Fax: +44 (0) 1522 500020 e-mail: [email protected] Dynex Semiconductor Ltd. Technical Documentation – Not for resale. 7/7 www.dynexsemi.com