IXYS IXBP5N160G Monolithic bipolar mos transistor Datasheet

IXBP 5N160 G
IXBH 5N160 G
High Voltage
BIMOSFETTM
Monolithic Bipolar MOS Transistor
C
Preliminary data sheet
IC25
VCES
VCE(sat)
tf
= 5.7 A
= 1600 V
= 4.9 V
= 70 ns
TO-220 AB
(IXBP)
G
C
C (TAB)
E
G
TO-247 AD
(IXBH)
E
G
C
E
C (TAB)
A = Anode, C = Cathode , TAB = Cathode
IGBT
Features
Conditions
VCES
TVJ = 25°C to 150°C
Maximum Ratings
VGES
IC25
IC90
TC = 25°C
TC = 90°C
ICM
VCEK
VGE = 10/0 V; RG = 47 Ω; TVJ = 125°C
RBSOA, Clamped inductive load; L = 100 µH
Ptot
TC = 25°C
Symbol
Conditions
IC = 3 A; VGE = 15 V; TVJ = 25°C
TVJ = 125°C
VGE(th)
IC = 0.3 mA; VGE = VCE
ICES
VGE = 0 V; VCE = VCES;
TVJ = 25°C
VCE = 0.8VCES; TVJ = 125°C
td(on)
tr
td(off)
tf
V
± 20
V
5.7
3.5
A
A
6
0.8VCES
A
68
W
Characteristic Values
(TVJ = 25°C, unless otherwise specified)
min.
typ. max.
VCE(sat)
IGES
1600
4.9
5.6
3.5
Cies
QGon
VCE = 25 V; VGE = 0 V; f = 1 MHz
VCE = 600V; VGE = 10 V; IC = 3 A
VF
(reverse conduction); IF = 3 A
RthJC
V
V
5.5
V
150
µA
µA
100
nA
50
VCE = 0 V; VGE = ± 20 V
Inductive load, TVJ = 125°C
VCE = 960 V; IC = 3 A
VGE = 10/0 V; RG = 47 Ω
7.2
140
200
120
70
ns
ns
ns
ns
325
26
pF
nC
6
V
• High Voltage BIMOSFETTM
- substitute for high voltage MOSFETs
with significantly lower voltage drop
- MOSFET compatible control
10 V turn on gate voltage
- fast switching for high frequency
operation
- reverse conduction capability
• industry standard package
- TO-220AB
- TO-247AD
epoxy meets UL94V-0
Applications
• switched mode power supplies
• DC-DC converters
• resonant converters
• lamp ballasts
• laser generators, x ray generators
1.85 K/W
321
Symbol
IXYS reserves the right to change limits, test conditions and dimensions.
© 2003 IXYS All rights reserved
IXYS Semiconductor GmbH
Edisonstr. 15,
D-68623 Lampertheim
Phone: +49-6206-503-0, Fax: +49-6206-503627
1-2
IXYS Corporation
3540 Bassett Street, Santa Clara CA 95054
Phone: (408) 982-0700, Fax: 408-496-0670
IXBP 5N160 G
IXBH 5N160 G
Dimensions
Component
Symbol
Conditions
Maximum Ratings
TVJ
Tstg
MD
mounting torque
Symbol
Conditions
RthCH
with heatsink compound
Weight
(TO-220)
(TO-247)
(TO-220)
(TO-247)
-55...+150
-55...+125
°C
°C
0.6
1.2
Nm
Nm
TO-220 AB
Characteristic Values
min.
typ. max.
0.25
K/W
2
6
g
g
Dim.
A
B
C
D
E
F
G
H
J
K
M
N
Q
R
Millimeter
Min.
Max.
12.70 13.97
14.73 16.00
9.91 10.66
3.54
4.08
5.85
6.85
2.54
3.18
1.15
1.65
2.79
5.84
0.64
1.01
2.54
BSC
4.32
4.82
1.14
1.39
0.35
0.56
2.29
2.79
Inches
Min.
Max.
0.500 0.550
0.580 0.630
0.390 0.420
0.139 0.161
0.230 0.270
0.100 0.125
0.045 0.065
0.110 0.230
0.025 0.040
0.100
BSC
0.170 0.190
0.045 0.055
0.014 0.022
0.090 0.110
TO-247 AD
© 2003 IXYS All rights reserved
Millimeter
Min. Max.
Inches
Min.
Max.
A
B
19.81 20.32
20.80 21.46
0.780
0.819
0.800
0.845
C
D*
15.75 16.26
3.55 3.65
0.610
0.140
0.640
0.144
E
F
4.32
5.4
5.49
6.2
0.170
0.212
0.216
0.244
G
H
1.65
-
2.13
4.5
0.065
-
0.084
0.177
J
K
1.0
10.8
1.4
11.0
0.040
0.426
0.055
0.433
L
M
4.7
0.4
5.3
0.8
0.185
0.016
0.209
0.031
N
1.5
2.49
0.087
0.102
321
Dim.
2-2
Similar pages