DE375-501N21A RF Power MOSFET ♦ ♦ ♦ ♦ ♦ N-Channel Enhancement Mode Low Qg and Rg High dv/dt Nanosecond Switching 50MHz Maximum Frequency Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGS Continuous ±20 V VGSM Transient ±30 V ID25 Tc = 25°C 25 A IDM Tc = 25°C, pulse width limited by TJM 150 A IAR Tc = 25°C 21 A EAR Tc = 25°C 30 mJ 5 V/ns dv/dt IS ≤ IDM, di/dt ≤ 100A/µs, VDD ≤ VDSS, Tj ≤ 150°C, RG = 0.2Ω >200 V/ns 940 W 425 W 4.5 W RthJC 0.16 C/W RthJHS 0.36 C/W IS = 0 PDC PDHS Tc = 25°C Derate 3.7W/°C above 25°C PDAMB Tc = 25°C Symbol Test Conditions Characteristic Values TJ = 25°C unless otherwise specified min. VDSS VGS = 0 V, ID = 3 ma VGS(th) VDS = VGS, ID = 4 ma IGSS VGS = ±20 VDC, VDS = 0 IDSS VDS = 0.8 VDSS TJ = 25°C VGS = 0 TJ = 125°C RDS(on) VGS = 15 V, ID = 0.5ID25 Pulse test, t ≤ 300µS, duty cycle d ≤ 2% gfs VDS = 15 V, ID = 0.5ID25, pulse test V 2.5 5.5 V ±100 nA 50 1 µA mA 0.22 Ω 17 S +175 175 TJM -55 Tstg Weight max. 500 -55 TJ TL typ. 1.6mm (0.063 in) from case for 10 s +175 VDSS = 500 V ID25 = 25 A RDS(on) = 0.22 Ω PDC = 940 W DRAIN GATE SG1 SG2 SD1 SD2 Features • Isolated Substrate − high isolation voltage (>2500V) − excellent thermal transfer − Increased temperature and power • • − − • • • cycling capability IXYS advanced low Qg process Low gate charge and capacitances easier to drive faster switching Low RDS(on) Very low insertion inductance (<2nH) No beryllium oxide (BeO) or other hazardous materials Advantages °C • Optimized for RF and high speed °C • Easy to mount—no insulators needed • High power density °C 300 °C 3 g switching at frequencies to 50MHz DE375-501N21A RF Power MOSFET Symbol Test Conditions Characteristic Values (TJ = 25°C unless otherwise specified) min. typ. max. RG 0.3 Ω Ciss 2000 pF 200 pF 45 pF 33 pF 5 ns 3 ns 5 ns 8 ns 77 nC 21 nC 40 nC Coss VGS = 0 V, VDS = 0.8 VDSS(max), f = 1 MHz Crss Cstray Back Metal to any Pin Td(on) Ton Td(off) VGS = 15 V, VDS = 0.8 VDSS ID = 0.5 IDM RG = 0.2 Ω (External) Toff Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS ID = 0.5 ID25 Qgd Source-Drain Diode Characteristic Values (TJ = 25°C unless otherwise specified) Symbol Test Conditions min. IS VGS = 0 V ISM Repetitive; pulse width limited by TJM VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle ≤ 2% Trr QRM IF = IS, -di/dt = 100A/µs, VR = 100V typ. max. 21 A 150 A 1.5 V 200 ns 0.6 µC 15 A IRM For detailed device mounting and installation instructions, see the “DESeries MOSFET Mounting Instructions” technical note on IXYS RF’s web site at www.ixysrf.com/Technical_Support/App_notes.html IXYS RF reserves the right to change limits, test conditions and dimensions. IXYS RF MOSFETS are covered by one or more of the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,891,686 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,486,715 5,381,025 5,640,045 DE375-501N21A RF Power MOSFET 10000 Ciss Coss Capacitance in pF Crss 1000 100 10 0 50 100 150 200 250 300 350 Vds in Volts 375-501N21A Capacitances vs Vds 400 450 500 DE375-501N21A RF Power MOSFET 501N21A DE-SERIES SPICE Model (Preliminary) The DE-SERIES SPICE Model is illustrated in Figure 1. The model is an expansion of the SPICE level 3 MOSFET model. It includes the stray inductive terms LG, LS and LD. Rd is the RDS(ON) of the device, Rds is the resistive leakage term. The output capacitance, COSS, and reverse transfer capacitance, CRSS are modeled with reversed biased diodes. This provides a varactor type response necessary for a high power device model. The turn on delay and the turn off delay are adjusted via Ron and Roff. Figure 1 DE-SERIES SPICE Model This SPICE model may be downloaded as a text file from the DEI web site at www.directedenergy.com/spice.htm Net List: .SUBCKT 501N21A 10 20 30 * TERMINALS: D G S * 500 Volt 21 Amp 0.22 ohm N-Channel Power MOSFET * REV.A 01-09-02 M1 1 2 3 3 DMOS L=1U W=1U RON 5 6 0.3 DON 6 2 D1 ROF 5 7 .1 DOF 2 7 D1 D1CRS 2 8 D2 D2CRS 1 8 D2 CGS 2 3 2.6N RD 4 1 0.22 DCOS 3 1 D3 RDS 1 3 5.0MEG LS 3 30 .5N LD 10 4 1N LG 20 5 1N .MODEL DMOS NMOS (LEVEL=3 VTO=3.0 KP=3.8) .MODEL D1 D (IS=.5F CJO=1P BV=100 M=.5 VJ=.6 TT=1N) .MODEL D2 D (IS=.5F CJO=400P BV=1000 M=.4 VJ=.6 TT=400N RS=10M) .MODEL D3 D (IS=.5F CJO=900P BV=1000 M=.3 VJ=.4 TT=400N RS=10M) .ENDS Doc #9200-0250 Rev 4 © 2003 IXYS RF An IXYS Company 2401 Research Blvd., Suite 108 Fort Collins, CO USA 80526 970-493-1901 Fax: 970-493-1903 Email: [email protected] Web: http://www.directedenergy.com