Panasonic FG6943010R Silicon n-channel mosfet Datasheet

FG6943010R
FG6943010R
Silicon N-channel MOSFET(FET1)
Unit: mm
Silicon P-channel MOSFET(FET2)
For switching
„ Features
y Low drive voltage: 2.5 V drive
y Halogen-free / RoHS compliant
(EU RoHS / UL-94 V-0 / MSL:Level 1 compliant)
„ Marking Symbol: V7
„ Basic Part Number
1. Source(FET1)
2. Gate(FET1)
3. Drain(FET2)
FJ330301 + FK330301 (Individual)
4. Source(FET2)
5. Gate(FET2)
6. Drain(FET1)
„ Packaging
FG6943010R Embossed type (Thermo-compression sealing):
8 000 pcs / reel (standard)
„ Absolute Maximum Ratings
SSMin6-F3-B
SC-107C
SOT-666
Panasonic
JEITA
Code
Ta = 25 °C
Internal Connection
Parameter
Drain-Source Voltage
FET1 Gate-source Voltage
(N-ch.) Drain Current
Drain Current (Pulsed)
Drain-source Voltage
FET2 Gate-source Voltage
(P-ch.) Drain Current
Drain Current (Pulsed)
Total Power Dissipation
Overall Channel Temperature
Storage Temperature
Symbol
Rating
Unit
VDS
VGS
ID
IDp
VDS
VGS
ID
IDp
PD
Tch
Tstg
30
±12
100
200
-30
±12
-100
-200
125
150
-55 to +150
V
V
mA
mA
V
V
mA
mA
mW
°C
°C
6
5
FET 1
FET 2
1
2
Ver. BED
3
Pin Name
1. Source(FET1)
2. Gate(FET1)
3. Drain(FET2)
Publication date: September 2012
4
4. Source(FET2)
5. Gate(FET2)
6. Drain(FET1)
1
FG6943010R
„ Electrical Characteristics Ta = 25 °C ± 3 °C
FET1(N-ch.)
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Forward transfer admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDSS
IDSS
IGSS
Vth
RDS(on)1
RDS(on)2
|Yfs|
Ciss
Coss
Crss
Turn-on Time *1
ton
Turn-off Tme *1
toff
Conditions
ID = 1.0 mA, VGS = 0 V
VDS = 30 V, VGS = 0 V
VGS = ±10 V, VDS = 0 V
ID = 1.0 μA, VDS = 3.0 V
ID = 10 mA, VGS = 2.5 V
ID = 10 mA, VGS = 4.0 V
ID = 10 mA, VDS = 3.0 V
Min
Typ
Max
30
0.5
20
VDS = 3 V, VGS = 0 V, f = 1 MHz
VDD = 3 V, VGS = 0 to 3 V,
ID = 10 mA
VDD = 3 V, VGS = 3 to 0 V,
ID = 10 mA
1.0
3
2
55
12
7
3
1.0
±10
1.5
6
3
Unit
V
μA
μA
V
Ω
Ω
mS
pF
pF
pF
100
ns
100
ns
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*1 FET1 ton,toff measurement circuit
„ Electrical Characteristics Ta = 25 °C ± 3 °C
FET2(P-ch.)
Parameter
Symbol
Drain-source Breakdown Voltage
Zero Gate Voltage Drain Current
Gate-source Leakage Current
Gate-source Threshold Voltage
Drain-source On-state Resistance
Forward transfer admittance
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
VDSS
IDSS
IGSS
Vth
RDS(on)1
RDS(on)2
|Yfs|
Ciss
Coss
Crss
Turn-on Time *2
ton
Turn-off Tme *2
toff
Conditions
ID = -1.0 mA, VGS = 0 V
VDS = -30 V, VGS = 0 V
VGS = ±10 V, VDS = 0 V
ID = -1.0 μA, VDS = -3.0 V
ID = -10 mA, VGS = -2.5 V
ID = -10 mA, VGS = -4.0 V
ID = -10 mA, VDS = -3.0 V
VDS = -3 V, VGS = 0 V, f = 1 MHz
VDD = -3 V, VGS = 0 to -3 V,
ID = -10 mA
VDD = -3 V, VGS = -3 to 0 V,
ID = -10 mA
Min
Typ
Max
-30
-0.5
20
-1.0
7
4
40
12
7
3
-1.0
±10
-1.5
17
7
Unit
V
μA
μA
V
Ω
Ω
mS
pF
pF
pF
100
ns
100
ns
Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors.
*2 FET2 ton,toff measurement circuit
Ver. BED
2
FG6943010R
*1 FET1 ton,toff measurement circuit
VDD = 3 V
ID = 10 mA
RL = 300 Ω
Vout
D
Vin
VGS=0~3 V
G
50 Ω
S
90 %
Vin
10 %
90 %
Vout
10 %
ton
toff
Ver. BED
3
FG6943010R
VDD = -3 V
*2 FET2 ton,toff measurement circuit
ID = -10 mA
RL = 300 Ω
Vout
D
Vin
VGS=0~-3 V
G
50 Ω
S
10 %
Vin
90 %
10 %
Vout
90 %
ton
toff
Ver. BED
4
FG6943010R
FET1(N-ch.)
1.E+00
Drain Current ID (A)
Drain Current ID (A)
0.1
VGS = 4.0 V
0.05
2.5 V
2.0 V
1.5 V
Ta = 85 °C
1.E-02
25 °C
1.E-03
-30 °C
1.E-04
1.E-05
1.E-06
0
0
1.E-01
0.5
0
1
Drain-source Voltage VDS (V)
ID - VDS
2
3
ID - VGS
0.3
10000
Drain-source On-State Resistance
RDS(on) (Ω)
Drain-source Voltage VDS (V)
1
Gate-source Voltage VGS (V)
10 mA
0.2
ID= 20 mA
0.1
5 mA
0
10
2.5 V
1
VGS = 4.0 V
1000
0.1
100
0
1
2
3
4
5
Gate to Source Voltage VGS(V)
0.001
0.01
0.1
Drain Current ID (A)
VDS - VGS
RDS(on) - ID
Capacitance C (pF)
100
Ciss
10
Coss
Crss
1
0.1
1
10
100
Drain-source Voltage VDS (V)
Capacitance - VDS
Ver. BED
5
FG6943010R
FET1(N-ch.)
Drain-source On-state Resistance
RDS(on) (Ω)
Gate-source Threshold Voltage Vth (V)
2
1.5
1
-50
0
50
100
150
3
2.5 V
2
VGS = 4.0 V
1
0
-50
0
Temperature Ta (°C)
50
100
150
Temperature Ta (°C)
Vth - Ta
RDS(on) - Ta
Total Power Dissipation PD (W)
0.2
0.1
0
0
50
100
150
Temperature Ta (°C)
PD - Ta
10
1
Drain current ID(A)
Thermal Resistance Rth (°C/W)
1000
100
10
IDp = 0.2 A
10 ms
100 ms
0.01
Operation in this area
is limited by RDS(on)
1s
DC
0.001
1
0.001
1 ms
0.1
Ta = 25 °C, Glass epoxy board
(25.4 × 25.4 × t0.8mm)coated with copper foil,
which has more than 300 mm2.
0.01
0.1
1
10
100
0.0001
0.01
1000
Pulse Width tsw (s)
0.1
1
10
100
Drain-source Voltage VDS(V)
Rth -tsw
Safe Operating Area
Ver. BED
6
FG6943010R
FET2(P-ch.)
-0.05
-0.1
Drain Current ID (A)
Drain Current ID (A)
VGS = -4.0 V
-2.5 V
-0.05
-1.5 V
Ta = 85 °C
-0.04
-0.03
25 °C
-0.02
-0.01
-30 °C
-2.0 V
0
0
-1
0
-0.2
-0.4
-0.6
-0.8
-3
Gate-source Voltage VGS (V)
Drain-source Voltage VDS (V)
ID - VDS
ID - VGS
1000000
Drain-source On-state Resistance
RDS(on) (Ω)
-0.5
Drain-source Voltage VDS (V)
-2
-1
-0.4
-0.3
ID= -20 mA
-0.2
-5 mA
-0.1
-10 mA
0
1000
100000
100
-2.5 V
10000
10
VGS = -4.0 V
1
1000
0.1
100
0
-1
-2
-3
-4
-5
-6
-0.001
-0.01
-0.1
Drain Current ID (A)
Gate-source Voltage VGS (V)
VDS - VGS
RDS(on) - ID
Capacitance C (pF)
100
Ciss
10
Coss
Crss
1
-0.1
-1
-10
-100
Drain-source Voltage VDS (V)
Capacitance - VDS
Ver. BED
7
FG6943010R
2
Drain-source On-state Resistance
RDS(on) (Ω)
Gate-source Threshold Voltage Vth (V)
FET2(P-ch.)
1.5
1
-50
0
50
100
150
12
10
-2.5 V
8
6
VGS = -4.0 V
4
2
0
-50
0
50
Temperature Ta (°C)
100
150
200
Temperature Ta (°C)
Vth - Ta
RDS(on) - Ta
Total Power Dissipation PD (W)
0.2
0.1
0
0
50
100
150
Temperature Ta (°C)
PD - Ta
-10
Drain Current ID (A)
Thermal Resistance Rth (°C/W)
1000
100
10
1
0.1
0.001
-1
IDp = -0.2 A
1 ms
-0.1
10 ms
100 ms
-0.01
Operation in this area
is limited by RDS(on)
-0.001
1s
DC
Ta = 25 °C, Glass epoxy board
(25.4 × 25.4 × t0.8 mm)coated with copper foil,
which has more than 300 mm2.
0.01
0.1
1
10
100
-0.0001
-0.01
1000
Pulse Width tsw (s)
-0.1
-1
-10
-100
Drain-source Voltage VDS (V)
Rth -tsw
Safe Operating Area
Ver. BED
8
FG6943010R
SSMin6-F3-B
Unit: mm
„ Land Pattern (Reference) (Unit: mm)
Ver. BED
9
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semiconductors described in this book
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