FG6943010R FG6943010R Silicon N-channel MOSFET(FET1) Unit: mm Silicon P-channel MOSFET(FET2) For switching Features y Low drive voltage: 2.5 V drive y Halogen-free / RoHS compliant (EU RoHS / UL-94 V-0 / MSL:Level 1 compliant) Marking Symbol: V7 Basic Part Number 1. Source(FET1) 2. Gate(FET1) 3. Drain(FET2) FJ330301 + FK330301 (Individual) 4. Source(FET2) 5. Gate(FET2) 6. Drain(FET1) Packaging FG6943010R Embossed type (Thermo-compression sealing): 8 000 pcs / reel (standard) Absolute Maximum Ratings SSMin6-F3-B SC-107C SOT-666 Panasonic JEITA Code Ta = 25 °C Internal Connection Parameter Drain-Source Voltage FET1 Gate-source Voltage (N-ch.) Drain Current Drain Current (Pulsed) Drain-source Voltage FET2 Gate-source Voltage (P-ch.) Drain Current Drain Current (Pulsed) Total Power Dissipation Overall Channel Temperature Storage Temperature Symbol Rating Unit VDS VGS ID IDp VDS VGS ID IDp PD Tch Tstg 30 ±12 100 200 -30 ±12 -100 -200 125 150 -55 to +150 V V mA mA V V mA mA mW °C °C 6 5 FET 1 FET 2 1 2 Ver. BED 3 Pin Name 1. Source(FET1) 2. Gate(FET1) 3. Drain(FET2) Publication date: September 2012 4 4. Source(FET2) 5. Gate(FET2) 6. Drain(FET1) 1 FG6943010R Electrical Characteristics Ta = 25 °C ± 3 °C FET1(N-ch.) Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 |Yfs| Ciss Coss Crss Turn-on Time *1 ton Turn-off Tme *1 toff Conditions ID = 1.0 mA, VGS = 0 V VDS = 30 V, VGS = 0 V VGS = ±10 V, VDS = 0 V ID = 1.0 μA, VDS = 3.0 V ID = 10 mA, VGS = 2.5 V ID = 10 mA, VGS = 4.0 V ID = 10 mA, VDS = 3.0 V Min Typ Max 30 0.5 20 VDS = 3 V, VGS = 0 V, f = 1 MHz VDD = 3 V, VGS = 0 to 3 V, ID = 10 mA VDD = 3 V, VGS = 3 to 0 V, ID = 10 mA 1.0 3 2 55 12 7 3 1.0 ±10 1.5 6 3 Unit V μA μA V Ω Ω mS pF pF pF 100 ns 100 ns Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *1 FET1 ton,toff measurement circuit Electrical Characteristics Ta = 25 °C ± 3 °C FET2(P-ch.) Parameter Symbol Drain-source Breakdown Voltage Zero Gate Voltage Drain Current Gate-source Leakage Current Gate-source Threshold Voltage Drain-source On-state Resistance Forward transfer admittance Input Capacitance Output Capacitance Reverse Transfer Capacitance VDSS IDSS IGSS Vth RDS(on)1 RDS(on)2 |Yfs| Ciss Coss Crss Turn-on Time *2 ton Turn-off Tme *2 toff Conditions ID = -1.0 mA, VGS = 0 V VDS = -30 V, VGS = 0 V VGS = ±10 V, VDS = 0 V ID = -1.0 μA, VDS = -3.0 V ID = -10 mA, VGS = -2.5 V ID = -10 mA, VGS = -4.0 V ID = -10 mA, VDS = -3.0 V VDS = -3 V, VGS = 0 V, f = 1 MHz VDD = -3 V, VGS = 0 to -3 V, ID = -10 mA VDD = -3 V, VGS = -3 to 0 V, ID = -10 mA Min Typ Max -30 -0.5 20 -1.0 7 4 40 12 7 3 -1.0 ±10 -1.5 17 7 Unit V μA μA V Ω Ω mS pF pF pF 100 ns 100 ns Note Measuring methods are based on JAPANESE INDUSTRIAL STANDARD JIS C 7030 Measuring methods for transistors. *2 FET2 ton,toff measurement circuit Ver. BED 2 FG6943010R *1 FET1 ton,toff measurement circuit VDD = 3 V ID = 10 mA RL = 300 Ω Vout D Vin VGS=0～3 V G 50 Ω S 90 % Vin 10 % 90 % Vout 10 % ton toff Ver. BED 3 FG6943010R VDD = -3 V *2 FET2 ton,toff measurement circuit ID = -10 mA RL = 300 Ω Vout D Vin VGS=0～-3 V G 50 Ω S 10 % Vin 90 % 10 % Vout 90 % ton toff Ver. BED 4 FG6943010R FET1(N-ch.) 1.E+00 Drain Current ID (A) Drain Current ID (A) 0.1 VGS = 4.0 V 0.05 2.5 V 2.0 V 1.5 V Ta = 85 °C 1.E-02 25 °C 1.E-03 -30 °C 1.E-04 1.E-05 1.E-06 0 0 1.E-01 0.5 0 1 Drain-source Voltage VDS (V) ID - VDS 2 3 ID - VGS 0.3 10000 Drain-source On-State Resistance RDS(on) (Ω) Drain-source Voltage VDS (V) 1 Gate-source Voltage VGS (V) 10 mA 0.2 ID= 20 mA 0.1 5 mA 0 10 2.5 V 1 VGS = 4.0 V 1000 0.1 100 0 1 2 3 4 5 Gate to Source Voltage VGS(V) 0.001 0.01 0.1 Drain Current ID (A) VDS - VGS RDS(on) - ID Capacitance C (pF) 100 Ciss 10 Coss Crss 1 0.1 1 10 100 Drain-source Voltage VDS (V) Capacitance - VDS Ver. BED 5 FG6943010R FET1(N-ch.) Drain-source On-state Resistance RDS(on) (Ω) Gate-source Threshold Voltage Vth (V) 2 1.5 1 -50 0 50 100 150 3 2.5 V 2 VGS = 4.0 V 1 0 -50 0 Temperature Ta (°C) 50 100 150 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 0.2 0.1 0 0 50 100 150 Temperature Ta (°C) PD - Ta 10 1 Drain current ID(A) Thermal Resistance Rth (°C/W) 1000 100 10 IDp = 0.2 A 10 ms 100 ms 0.01 Operation in this area is limited by RDS(on) 1s DC 0.001 1 0.001 1 ms 0.1 Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8mm)coated with copper foil, which has more than 300 mm2. 0.01 0.1 1 10 100 0.0001 0.01 1000 Pulse Width tsw (s) 0.1 1 10 100 Drain-source Voltage VDS(V) Rth -tsw Safe Operating Area Ver. BED 6 FG6943010R FET2(P-ch.) -0.05 -0.1 Drain Current ID (A) Drain Current ID (A) VGS = -4.0 V -2.5 V -0.05 -1.5 V Ta = 85 °C -0.04 -0.03 25 °C -0.02 -0.01 -30 °C -2.0 V 0 0 -1 0 -0.2 -0.4 -0.6 -0.8 -3 Gate-source Voltage VGS (V) Drain-source Voltage VDS (V) ID - VDS ID - VGS 1000000 Drain-source On-state Resistance RDS(on) (Ω) -0.5 Drain-source Voltage VDS (V) -2 -1 -0.4 -0.3 ID= -20 mA -0.2 -5 mA -0.1 -10 mA 0 1000 100000 100 -2.5 V 10000 10 VGS = -4.0 V 1 1000 0.1 100 0 -1 -2 -3 -4 -5 -6 -0.001 -0.01 -0.1 Drain Current ID (A) Gate-source Voltage VGS (V) VDS - VGS RDS(on) - ID Capacitance C (pF) 100 Ciss 10 Coss Crss 1 -0.1 -1 -10 -100 Drain-source Voltage VDS (V) Capacitance - VDS Ver. BED 7 FG6943010R 2 Drain-source On-state Resistance RDS(on) (Ω) Gate-source Threshold Voltage Vth (V) FET2(P-ch.) 1.5 1 -50 0 50 100 150 12 10 -2.5 V 8 6 VGS = -4.0 V 4 2 0 -50 0 50 Temperature Ta (°C) 100 150 200 Temperature Ta (°C) Vth - Ta RDS(on) - Ta Total Power Dissipation PD (W) 0.2 0.1 0 0 50 100 150 Temperature Ta (°C) PD - Ta -10 Drain Current ID (A) Thermal Resistance Rth (°C/W) 1000 100 10 1 0.1 0.001 -1 IDp = -0.2 A 1 ms -0.1 10 ms 100 ms -0.01 Operation in this area is limited by RDS(on) -0.001 1s DC Ta = 25 °C, Glass epoxy board (25.4 × 25.4 × t0.8 mm)coated with copper foil, which has more than 300 mm2. 0.01 0.1 1 10 100 -0.0001 -0.01 1000 Pulse Width tsw (s) -0.1 -1 -10 -100 Drain-source Voltage VDS (V) Rth -tsw Safe Operating Area Ver. BED 8 FG6943010R SSMin6-F3-B Unit: mm Land Pattern (Reference) (Unit: mm) Ver. BED 9 Request for your special attention and precautions in using the technical information and semiconductors described in this book (1) If any of the products or technical information described in this book is to be exported or provided to non-residents, the laws and regulations of the exporting country, especially, those with regard to security export control, must be observed. (2) The technical information described in this book is intended only to show the main characteristics and application circuit examples of the products. No license is granted in and to any intellectual property right or other right owned by Panasonic Corporation or any other company. Therefore, no responsibility is assumed by our company as to the infringement upon any such right owned by any other company which may arise as a result of the use of technical information described in this book. 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