Central PROCESS TM Semiconductor Corp. CPD80 Switch Diode High Voltage Switching Diode Chip PROCESS DETAILS Process EPITAXIAL PLANAR Die Size 16 x 16 MILS Die Thickness 9.0 MILS Anode Bonding Pad Area 6.5 x 6.5 MILS Top Side Metalization Al - 30,000Å Back Side Metalization Au - 18,000Å GEOMETRY GROSS DIE PER 4 INCH WAFER 45,050 PRINCIPAL DEVICE TYPES CMPD2003 CMPD2004 1N3070 CMDD2003 CMDD2004 BACKSIDE CATHODE 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com R2 (22-October 2003) Central TM Semiconductor Corp. 145 Adams Avenue Hauppauge, NY 11788 USA Tel: (631) 435-1110 Fax: (631) 435-1824 www.centralsemi.com PROCESS CPD80 Typical Electrical Characteristics R2 (22-October 2003)