ISSI IS25C256-2GLI 128k-bit/ 256k-bit spi serial electrically erasable prom Datasheet

IS25C128
IS25C256
ISSI
128K-bit/ 256K-bit SPI SERIAL
ELECTRICALLY ERASABLE PROM
®
Advanced Information
JULY 2006
FEATURES
DESCRIPTION
• Serial Peripheral Interface (SPI) Compatible
— Supports SPI Modes 0 (0,0) and 3 (1,1)
• Low power CMOS
— Active current less than 3.0 mA (2.5V)
— Standby current less than 20 µA (2.5V)
• Low-voltage Operation
— Vcc = 1.8V to 5.5V
• Block Write Protection
— Protect 1/4, 1/2, or Entire Array
• 64 byte page write mode
— Partial page writes allowed
• 2.1 MHz Clock Rate (5V)
• Self timed write cycles
— 5ms max @ 2.5V
• High-reliability
— Endurance: 1,000,000 cycles per byte
— Data retention: 100 years
• 8-pin JEDEC SOIC, 8-pin EIAJ SOIC, and 8-pin PDIP
packages available
• Industrial and Automotive temperature ranges
• Lead-free available
The IS25C128 and IS25C256 are electrically erasable
PROM devices that use the Serial Peripheral Interface
(SPI) for communications. The IS25C128 is 128Kbit
(16K x 8) and the IS25C256 is 256Kbit (32K x 8). The
IS25C128/256 EEPROMs are offered in a wide
operating voltage range of 1.8V to 5.5V for compatibility
with most application voltages. ISSI designed the
IS25C128/256 to be an efficient SPI EEPROM solution.
The devices are packaged in 8-pin JEDEC SOIC, 8-pin
EIAJ SOIC, and 8-pin PDIP.
The functional features of the IS25C128/256 allow them
to be among the most advanced serial non-volatile
memories available. Each device has a Chip-Select
(CS) pin, and a 3-wire interface of Serial Data In (SI),
Serial Data Out (SO), and Serial Clock (SCK). While
the 3-wire interface of the IS25C128/256 provides for
high-speed access, a HOLD pin allows the memories to
ignore the interface in a suspended state; later the
HOLD pin re-activates communication without reinitializing the serial sequence. A Status Register
facilitates a flexible write protection mechanism, and a
device-ready bit (RDY).
Copyright © 2006 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
1
IS25C128
IS25C256
ISSI
®
PIN CONFIGURATION
8-Pin DIP and SOIC
CS
1
8
VCC
SO
2
7
HOLD
WP
3
6
SCK
GND
4
5
SI
PIN DESCRIPTIONS
CS
Chip Select
SCK
SI
SO
GND
VCC
WP
HOLD
Serial Data Clock
Serial Data Input
Serial Data Output
Ground
Power
Write Protect
Suspends Serial Input
PIN DESCRIPTIONS
Serial Clock (SCK): This timing signal provides synchronization between the microcontroller and IS25C128/
256. Op-Codes, byte addresses, and data are latched
on SI with a rising edge of the SCK. Data on SO is
refreshed on the falling edge of SCK for SPI modes (0,0)
and (1,1).
Serial Data Input (SI): This is the input pin for all data
that the IS25C128/256 is required to receive.
Serial Data Output (SO): This is the output pin for all
data transmitted from the IS25C128/256.
2
CS
Chip Select (CS
CS): The CS pin activates the device.
Upon power-up, CS should follow Vcc. When the device
is to be enabled for instruction input, the signal requires
a High-to-Low transition. While CS is stable Low, the
master and slave will communicate via SCK, SI, and SO
signals. Upon completion of communication, CS must
be driven High. At this moment, the slave device may
start its internal write cycle. When CS is high, the
device enters a power-saving standby mode, unless an
internal write operation is underway. During this mode,
the SO pin becomes high impedance.
WP
Write Protect (WP
WP): The purpose of this input signal is
to initiate Hardware Write Protection mode. This mode
prevents the Block Protection bits and the WPEN bit in
the Status Register from being altered. To cause
Hardware Write Protection, WP must be Low at the same
time WPEN is 1. WP may be hardwired to Vcc or GND.
HOLD
HOLD (HOLD
HOLD): This input signal is used to suspend the
device in the middle of a serial sequence and temporarily
ignore further communication on the bus (SI, SO, SCK).
Together with Chip Select, the HOLD signal allows
multiple slaves to share the bus. The HOLD signal
transitions must occur only when SCK is Low, and be
held stable during SCK transitions. (See Figure 8 for
Hold timing) To disable this feature, HOLD may be
hardwired to Vcc.
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Advanced Information Rev. 00E
06/13/06
IS25C128
IS25C256
ISSI
®
SERIAL INTERFACE DESCRIPTION
MASTER: The device that provides a clock signal.
SLAVE: The IS25C128/256 is a slave because the clock
signal is an input.
TRANSMITTER/RECEIVER: The IS25C128/256 has both
data input (SI) and data output (SO).
MSB: The most significant bit. It is always the first bit
transmitted or received.
OP-CODE: The first byte transmitted to the slave following CS transition to LOW. If the OP-CODE is a valid
member of the IS25C128/256 instruction set (Table 3),
then it is decoded appropriately. If the OP-CODE is not
valid, and the SO pin remains in high impedance.
BLOCK DIAGRAM
VCC
STATUS
REGISTER
GND
16K x 8/32K x 8
MEMORY ARRAY
DATA
REGISTER
ADDRESS
DECODER
SI
CS
WP
SCK
OUTPUT
BUFFER
MODE
DECODE
LOGIC
CLOCK
SO
HOLD
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3
IS25C128
IS25C256
ISSI
®
STATUS REGISTER
The status register contains 8-bits for write protection
control and write status. (See Table 1). It is the only
region of memory other than the main array that is
accessible by the user.
Table 1. Status Register Format
Bit 7
WPEN
Bit 6 Bit 5 Bit 4
X
X
X
Bit 3 Bit 2
Bit1 Bit 0
BP1 BP0 WEN RDY
Notes:
1. X = Don't care bit.
2. During internal write cycles, bits 0 to 7 are temporarily 1's.
The Status Register is Read-Only if either: a) Hardware
Write Protection is enabled or b) WEN is set to 0. If
neither is true, it can be modified by a valid instruction.
RDY
Ready (RDY
RDY), Bit 0: When RDY = 1, it indicates that
the device is busy with a write cycle. RDY = 0 indicates that the device is ready for an instruction. If RDY
= 1, the only command that will be handled by the
device is Read Status Register.
Write Enable (WEN), Bit 1: This bit represents the
status of device write protection. If WEN = 0, the Status
Register and the entire array is protected from modification, regardless of the setting of WPEN, WP pin, or block
protection. The only way to set WEN to 1 is via the
Write Enable command (WREN). WEN is reset to 0
upon power-up.
4
Block Protect (BP1, BP0), Bits 2-3: Together, these
bits represent one of four block protection configurations
implemented for the memory array. (See Table 2 for
details.)
BP0 and BP1 are non-volatile cells similar to regular
array cells, and factory programmed to 0. The block of
memory defined by these bits is always protected,
regardless of the setting of WPEN, WP , or WEN.
Table 2. Block Protection
Status
Register
Bits
Array Addresses Protected
Level
BP1
BP0
IS25C128
IS25C256
0
1(1/4)
0
0
0
1
2(1/2)
1
0
3(All)
1
1
None
3000h
-3FFFh
2000h
-3FFFh
0000h
-3FFFh
None
6000h
-7FFFh
4000h
-7FFFh
0000h
-7FFFh
Don’t Care, Bits 4-6: Each of these bits can receive
either 0 or 1, but values will not be retained. When
these bits are read from the register, they are always 0.
Write Protect Enable (WPEN), Bit 7: This bit can be
used in conjunction with WP pin to enable Hardware
Write Protection, which causes the Status Register to
be read-only. The memory array is not protected by this
mode. Hardware Write Protection requires that WP = 0
and WPEN = 1; it is disabled otherwise. Note: WPEN
cannot be changed from 1 to 0 if the WP pin is already
set to Low. (See Table 4 for data protection relationship)
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
IS25C128
IS25C256
ISSI
®
DEVICE OPERATION
The operations of the IS25C128/256 are controlled by a set of instructions that are clocked-in serially SI pin. (See
Table 3). To begin an instruction, the chip select (CS) should be dropped Low. Subsequently, each Low-to-High
transition of the clock (SK) will latch a stable value on the SI pin. After the 8-bit op-code, it may be appropriate to
continue to input an address or data to SI, or to output data from SO. During data output, values appear on the falling
edge of SK. All bits are transferred with MSB first. Upon the last bit of communication, but prior to any following Lowto-High transition of SK, CS should be raised High to end the transaction. The device then would enter Standby Mode
if no internal programming were underway.
Table 3. Instruction Set
Name
Op-code
WREN
0000 X110
WRDI
0000 X100
Operation
Address
Data(SI)
Data (SO)
Set Write Enable Latch
-
-
-
Reset Write Enable Latch
-
-
-
RDSR
0000 X101
Read Status Register
-
-
D7-D0,...
WRSR
0000 X001
Write Status Register
-
D7-D0
-
READ
0000 X011
Read Data from Array
A15-A0
-
D7-D0,...
WRITE
0000 X010
Write Data to Array
A15-A0
D7-D0,...
-
Notes:
1. X = Don’t care bit. For consistency, it is best to use “0”.
2. Some address bits are don’t care. See Table 5.
3. If the bits clocked-in for an op-code are invalid, SO remains high impedance, and upon CS going High there is no affect. A
valid op-code with an invalid number of bits clocked-in for address or data will cause an attempt to modify the array or
Status Register to be ignored.
WRITE ENABLE (WREN)
When Vcc is initially applied, the device powers up with
both status register and entire array in a write-disabled
state. Upon completion of Write Disable (WRDI), Write
Status Register (WRSR), or Write Data to Array
(WRITE), the device resets the WEN bit in the Status
Register to 0. Prior to any data modification, a WREN
instruction is necessary to set WEN to 1. (See Figure 2
for timing).
READ STATUS REGISTER (RDSR)
The Read Status instruction tells the user the status of
Write Protect Enable, the Block Protection setting (see
Table 2), the Write Enable state, and the RDY status.
RDSR is the only instruction accepted when a write
cycle is underway. It is recommended that the status of
Write Enable and RDY be checked, especially prior to
an attempted modification of data. The 8 bits of the
Status Register can be repeatedly output on SO after
the initial Op-code. (See Figure 4 for timing).
WRITE DISABLE (WRDI)
The device can be completely protected from modification by resetting WEN to 0 through the WRDI instruction. (See Figure 3 for timing).
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5
IS25C128
IS25C256
ISSI
WRITE STATUS REGISTER (WRSR)
This instruction lets the user choose a Block Protection
setting, and set or reset the WPEN bit. The values of
the other data bits incorporated into WRSR can be 0 or
1, and are not stored in the Status Register. WRSR will
be ignored unless both the following are true: a) WEN =
1, due to a prior WREN instruction; and b) Hardware
Write Protection is not enabled. (See Table 4 for details). Except for the RDY status, the values in the
Status Register remain unchanged until the moment
when the write cycle is complete and the register is
updated. Note: WPEN can be changed from 1 to 0 only
if WP is already set High. Once completed, WEN is
reset for complete chip write protection. (See Figure 5
for timing).
READ DATA (READ)
This instruction begins with the op-code and the 16-bit
address, and causes the selected data byte to be
shifted out on SO. Following this first data byte, additional sequential bytes are output. If the data byte in the
highest address is output, the address rolls-over to the
lowest address in the array, and the output could loop
indefinitely. At any time, a rising CS signal completes
the operation. (See Figure 6 for timing).
®
WRITE DATA (WRITE)
The WRITE instruction begins with the op-code, the 16bit address of the first byte to be modified, and the first
data byte. Additional data bytes may be written sequentially to the array after the first byte. Each WRITE
instruction can affect the contents of a 64 byte page, but
no more. The page begins at address XXXXXXXX
XX000000, and ends with XXXXXXXX XX111111. If the last
byte of the page is input, the address rolls over to the
beginning of the same page. More than 64 data bytes
can be input during the same instruction, but upon a
completed write cycle, a page would only contain the
last 64 bytes.
The region of the array defined within Block Protection
cannot be modified as long as that block configuration is
selected. The region of the array outside the Block
Protection can only be modified if Write Enable (WEN) is
set to 1. Therefore, it may be necessary that a WREN
instruction occur prior to WRITE. Hardware Write
Protection has no affect on the memory array. Once
Write is completed, WEN is reset for complete chip
write protection. (See Figure 7 for timing).
Table 5. Address Key
Name
IS25C128
IS25C256
A13-A0
A15-A14
A14-A0
A15
AN
Don't
Care Bits
Table 4. Write Protection
WPEN
0
0
1
1
X
X
WP
Hardware Write
Protection
WEN
Inside Block
Outside Block
Status Register
(WPEN, BP1, BP0)
X
X
0
0
1
1
Not Enabled
Not Enabled
Enabled
Enabled
Not Enabled
Not Enabled
0
1
0
1
0
1
Read-only
Read-only
Read-only
Read-only
Read-only
Read-only
Read-only
Unprotected
Read-only
Unprotected
Read-only
Unprotected
Read-only
Unprotected
Read-only
Read-only
Read-only
Unprotected
Note: X = Don't care bit.
6
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Advanced Information Rev. 00E
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IS25C128
IS25C256
ISSI
®
ABSOLUTE MAXIMUM RATINGS (1)
Symbol
VS
VP
TBIAS
TSTG
IOUT
Parameter
Supply Voltage
Voltage on Any Pin
Temperature Under Bias
Storage Temperature
Output Current
Value
-0.5 to + 6.5
–0.5 to Vcc + 0.5
–55 to +125
–65 to +150
5
Unit
V
V
°C
°C
mA
Notes:
1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at
these or any other conditions outside those indicated in the operational sections of this
specification is not implied. Exposure to absolute maximum rating conditions for extended
periods may affect reliability.
OPERATING RANGE (IS25C256-2 and IS25C128-2)
Range
Industrial
Ambient Temperature
–40°C to +85°C
VCC
1.8V to 5.5V
Note:
1. ISSI offers Industrial grade for Commercial applications (0oC to +70oC).
OPERATING RANGE (IS25C256-3 and IS25C128-3)
Range
Automotive
Ambient Temperature
–40°C to +125°C
VCC
2.5V to 5.5V
CAPACITANCE(1,2)
Symbol
Parameter
CIN
Input Capacitance
COUT
Output Capacitance
Conditions
Max.
Unit
VIN = 0V
6
pF
VOUT = 0V
8
pF
Notes:
1. Tested initially and after any design or process changes that may affect these parameters and not 100%
tested.
2. Test conditions: TA = 25°C, f = 1 MHz, Vcc = 5.0V.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
7
IS25C128
IS25C256
ISSI
®
DC ELECTRICAL CHARACTERISTICS
TA = –40°C to +85°C for Industrial, TA = –40°C to +125°C for Automotive.
Symbol Parameter
Test Conditions
Min.
Max.
Unit
VOL1
Output LOW Voltage
VCC = 5V, IOL = 3 mA
—
0.4
V
VOL2
Output LOW Voltage
VCC = 2.5V, IOL = 1.5 mA
—
0.4
V
VOL3
Output LOW Voltage
VCC = 1.8V, IOL = 0.15 mA
—
0.2
V
VOH1
Output HIGH Voltage
VCC = 5V, IOH = -3 mA
0.8 X VCC
—
V
VOH2
Output HIGH Voltage
VCC = 2.5V, IOH = -0.4mA
0.8 X VCC
—
V
VOH3
Output HIGH Voltage
VCC = 1.8V, IOH = -0.1mA
0.8 X VCC
—
V
VIH
Input HIGH Voltage
0.7X VCC
VCC + 1
V
VIL
Input LOW Voltage
-1.0
0.3 X VCC
V
ILI
Input Leakage Current
VIN = 0V TO VCC
-3
3
µA
ILO
Output Leakage Current
VOUT = 0V TO VCC, CS = VCC
-3
3
µA
Min.
Max.
Unit
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +85°C for Industrial.
Symbol Parameter
Test Conditions
ICC1
Vcc Operating Current
Read/Write at 2.1 MHz (Vcc = 5V)
—
5.0
mA
ICC2
Vcc Operating Current
Read/Write at 2.1 MHz (Vcc = 2.5V)
—
3.0
mA
ICC3
Vcc Operating Current
Read/Write at 500 KHz (Vcc = 1.8V)
—
2.0
mA
ISB1
Standby Current
Vcc = 5.0V, VIN = VCC or GND
CS = Vcc
—
25
µA
ISB2
Standby Current
Vcc = 2.5V, VIN = VCC or GND
CS = Vcc
—
20
µA
ISB3
Standby Current
Vcc = 1.8V, VIN = VCC or GND
CS = Vcc
—
15
µA
Min.
Max.
Unit
POWER SUPPLY CHARACTERISTICS
TA = –40°C to +125°C for Automotive.
8
Symbol Parameter
Test Conditions
ICC1
Vcc Operating Current
Read/Write at 2.1 MHz (Vcc = 5V)
—
6.0
mA
ICC2
Vcc Operating Current
Read/Write at 2.1 MHz (Vcc = 2.5V)
—
3.0
mA
ISB1
Standby Current
Vcc = 5.0V, VIN = VCC or GND
CS = Vcc
—
30
µA
ISB2
Standby Current
Vcc =2.5V, VIN = VCC or GND
CS = Vcc
—
20
µA
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
IS25C128
IS25C256
ISSI
®
AC Characteristics
TA = –40°C to +85°C for Industrial.
1.8V ≤ Vcc < 2.5V
Min Max
2.5V ≤ Vcc ≤ 5.5V
Min Max
Symbol
Parameter
Units
fSCK
SCK Clock Frequency
0
0.5
0
2.1
MHz
tRI
Input Rise Time
—
2
—
2
µs
tFI
Input Fall Time
—
2
—
2
µs
tWH
SCK High Time
800
—
200
—
ns
tWL
SCK Low Time
800
—
200
—
ns
tCS
CS High Time
200
—
100
—
ns
tCSS
CS Setup Time
200
—
90
—
ns
tCSH
CS Hold Time
200
—
90
—
ns
tSU
Data In Setup Time
40
—
20
—
ns
tH
Data In Hold Time
50
—
30
—
ns
tHD
Hold Setup Time
100
—
50
—
ns
tCD
Hold Hold Time
100
—
50
—
ns
tV
Output Valid
0
150
0
60
ns
tHO
Output Hold Time
0
—
0
—
ns
tLZ
Hold to Output Low Z
0
100
0
50
ns
tHZ
Hold to Output High Z
—
250
—
100
ns
tDIS
Output Disable Time
—
250
—
100
ns
tWC
Write Cycle Time
—
10
—
5
ms
CL = 100pF
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
9
IS25C128
IS25C256
ISSI
®
AC Characteristics
TA = –40°C to +125°C for Automotive.
2.5V ≤ Vcc ≤ 5.5V
Min
Max
Symbol
Parameter
Units
fSCK
SCK Clock Frequency
0
2.1
tRI
Input Rise Time
—
2
µs
tFI
Input Fall Time
—
2
µs
tWH
SCK High Time
200
—
ns
tWL
SCK Low Time
200
—
ns
tCS
CS High Time
100
—
ns
tCSS
CS Setup Time
90
—
ns
tCSH
CS Hold Time
90
—
ns
tSU
Data In Setup Time
20
—
ns
tH
Data In Hold Time
30
—
ns
tHD
Hold Setup Time
50
—
ns
tCD
Hold Hold Time
50
—
ns
tV
Output Valid
0
60
ns
tHO
Output Hold Time
0
—
ns
tLZ
Hold to Output Low Z
0
50
ns
tHZ
Hold to Output High Z
—
100
ns
tDIS
Output Disable Time
—
100
ns
tWC
Write Cycle Time
—
5
ms
MHz
CL = 100pF
10
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IS25C128
IS25C256
ISSI
®
TIMING DIAGRAMS
Figure 1. Synchronous Data Timing
CS
tCS
VIH
VIL
tCSH
tCSS
SK
VIH
VIL
DIN
VIH
VIL
DOUT
VOH
VOL
tWH
tSU
tWL
tH
VALID IN
tV
HIGH-Z
tHO
tDIS
HIGH-Z
Figure 2. WREN Timing
CS
SK
DIN
WREN OP-CODE
HIGH-Z
DOUT
Figure 3. WRDI Timing
CS
SK
DIN
WRDI OP-CODE
DOUT
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HIGH-Z
11
IS25C128
IS25C256
ISSI
®
Figure 4. RDSR Timing
CS
SK
Din
Instruction
DATA OUT
7 6 5 4 3 2 1 0
Dout
Figure 5. WRSR Timing
CS
SK
Din
Instruction
DATA IN
7 6 5
4
3
2
1
0
Dout
Figure 6. READ Timing
CS
SK
Instruction
Din
Dout
12
BYTE Address
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0
DATA OUT
7 6 5 4 3 2 1 0
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Advanced Information Rev. 00E
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IS25C128
IS25C256
ISSI
®
Figure 7. WRITE Timing
CS
SK
Instruction
BYTE Address
Din
DATA IN
15 14 13 12 11 10 9 8 7 6 5 4 3 2 1 0 7 6 5 4 3 2 1 0
Dout
Figure 8. HOLD Timing
CS
tCD
tCD
SCK
tHD
tHD
HOLD
tHZ
DOUT
tLZ
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
13
IS25C128
IS25C256
ISSI
®
ORDERING INFORMATION
Industrial Range: –40°C to +85°C
Voltage
Range
Part Number
Package
1.8V
to 5.5V
IS25C128-2GI
IS25C128-2GLI
IS25C128-2PI
IS25C128-2PLI
IS25C128-2WI
IS25C128-2WLI
Small Outline (JEDEC STD)
Small Outline (JEDEC STD), Lead-free
300-mil Plastic DIP
300-mil Plastic DIP, Lead-free
Small Outline (EIAJ STD)
Small Outline (EIAJ STD), Lead-free
1.8V
to 5.5V
IS25C256-2GI
IS25C256-2GLI
IS25C256-2PI
IS25C256-2PLI
IS25C256-2WI
IS25C256-2WLI
Small Outline (JEDEC STD)
Small Outline (JEDEC STD), Lead-free
300-mil Plastic DIP
300-mil Plastic DIP, Lead-free
Small Outline (EIAJ STD)
Small Outline (EIAJ STD), Lead-free
ORDERING INFORMATION
Automotive Range: –40°C to +125°C
Voltage
Range
14
Part Number
Package
2.5V
to 5.5V
IS25C128-3GA3
IS25C128-3GLA3
IS25C128-3PA3
IS25C128-3PLA3
IS25C128-3WA3
IS25C128-3WLA3
Small Outline (JEDEC STD)
Small Outline (JEDEC STD), Lead-free
300-mil Plastic DIP
300-mil Plastic DIP, Lead-free
Small Outline (EIAJ STD)
Small Outline (EIAJ STD), Lead-free
2.5V
to 5.5V
IS25C256-3GA3
IS25C256-3GLA3
IS25C256-3PA3
IS25C256-3PLA3
IS25C256-3WA3
IS25C256-3WLA3
Small Outline (JEDEC STD)
Small Outline (JEDEC STD), Lead-free
300-mil Plastic DIP
300-mil Plastic DIP, Lead-free
Small Outline (EIAJ STD)
Small Outline (EIAJ STD), Lead-free
Integrated Silicon Solution, Inc. — 1-800-379-4774
Advanced Information Rev. 00E
06/13/06
ISSI
PACKAGING INFORMATION
®
300-mil Plastic DIP
Package Code: N,P
N
E1
1
D
S
S
SEATING PLANE
B1
E
A
L
C
A1
FOR
32-PIN ONLY
e
MILLIMETERS
Sym.
Min.
INCHES
Max.
Min.
Max.
4.57
9.53
8.26
0.145
0.015
0.014
0.045
0.032
0.008
0.359
0.300
0.180
E
3.68
0.38
0.36
1.14
0.81
0.20
9.12
7.62
E1
6.20
6.60
0.244
0.260
eA
e
8.13
9.65
0.320
0.380
L
3.18
—
0.125
—
S
0.64
0.762
0.025
0.030
N0.
Leads
A
A1
B
B1
B2
C
D
B2
B
eA
Notes:
1. Controlling dimension: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should
be measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within 0.004
inches at the seating plane.
8
—
0.56
1.52
1.17
0.33
2.54 BSC
—
0.022
0.060
0.046
0.013
0.375
0.325
0.100 BSC
Copyright © 2003 Integrated Silicon Solution, Inc. All rights reserved. ISSI reserves the right to make changes to this specification and its products at any time
without notice. ISSI assumes no liability arising out of the application or use of any information, products or services described herein. Customers are advised to
obtain the latest version of this device specification before relying on any published information and before placing orders for products.
Integrated Silicon Solution, Inc. — www.issi.com — 1-800-379-4774
Rev. D
02/14/03
ISSI
PACKAGING INFORMATION
150-mil Plastic SOP
Package Code: G, GR
®
N
E
H
1
D
SEATING PLANE
A
A1
e
L
α
C
B
Symbol
Ref. Std.
No. Leads
A
A1
B
C
D
E
H
e
L
150-mil Plastic SOP (G, GR)
Min
Max
Min
Max
Inches
mm
8
8
—
0.068
—
1.73
0.004
0.009
0.1
0.23
0.013
0.020
0.33
0.51
0.007
0.010
0.18
0.25
0.189
0.197
4.8
5
0.150
0.157
3.81
3.99
0.228
0.245
5.79
6.22
0.050 BSC
1.27 BSC
0.020
0.035
0.51
0.89
Notes:
1. Controlling dimension: inches, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions and should be
measured from the bottom of the package.
4. Formed leads shall be planar with respect to one another within 0.004 inches at the
seating plane.
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. C
10/03/01
2
ISSI
PACKAGING INFORMATION
200-mil Plastic SOP
Package Code: W
®
N
E
H
1
D
SEATING PLANE
A
A1
e
L
α
C
B
Notes:
1. Controlling dimension: mm, unless otherwise specified.
2. BSC = Basic lead spacing between centers.
3. Dimensions D and E1 do not include mold flash protrusions
and should be measured from the bottom of the package.
200-mil Plastic SOP (W)
Symbol
Ref. Std.
No. Leads
A
A1
B
C
D
E
H
e
L
Min
Max
Inches
8
—
0.085
0.004
0.009
0.014
0.018
0.006
0.014
0.203
0.211
0.204
0.213
0.303
0.325
0.050 BSC
0.020
0.033
Min
Max
mm
8
—
2.16
0.10
0.23
0.35
0.45
0.15
0.35
5.15
5.35
5.18
5.40
7.70
8.26
1.27 BSC
0.51
0.85
Integrated Silicon Solution, Inc. — 1-800-379-4774
Rev. A
10/20/05
2