GaAs HJ-FET L TO S BAND LOW NOISE AMPLIFIER (New Plastic Package) FEATURES NE38018 NOISE FIGURE & ASSOCIATED GAIN vs. FREQUENCY VCE = 2 V, ID= 5 mA • LOW COST MINIATURE PLASTIC PACKAGE (SOT-343) 25 4 Noise Figure, NF (dB) • HIGH ASSOCIATED GAIN: 14.5 dB typical at 2 GHz • LG = 0.6 µm, WG = 800 µm • TAPE & REEL PACKAGING DESCRIPTION GA 15 3 10 5 2 0 1 NF The NE38018 is a low cost gallium arsenide Hetero-Junction FET housed in a miniature (SOT-343) plastic surface mount package. The device is fabricated using ion implantation for improved RF and DC performance, reliability, and uniformity. Its low noise figure, high gain, small size and weight make it an ideal low noise medium power amplifier transistor in the 13 GHz frequency range. The NE38018 is suitable for GPS, PCS, WLAN, MMDS, and other commercial applications. Associated Gain, GA (dB) 20 • LOW NOISE FIGURE: 0.55 dB typical at 2 GHz 0 0.5 1 2 3 4 5 6 7 8 910 Frequency, f (GHz) NEC's stringent quality assurance and test procedures ensure the highest reliability and performance. 18 Package SOT-343 Style ELECTRICAL CHARACTERISTICS (TA = 25°C) PART NUMBER PACKAGE OUTLINE SYMBOL PARAMETERS AND CONDITIONS NE38018 18 UNITS NF1 Noise Figure at VDS = 2 V, ID = 5 mA, f = 2 GHz dB GA1 Associated Gain at VDS = 2 V, ID = 5 mA, f = 2 GHz dB P1dB Output Power at 1 dB Gain Compression Point, f = 2 GHz VDS = 2 V, IDS = 15 mA VDS = 3 V, IDS = 30 mA G1dB MAG O/P IP3 IDSS MIN 12.5 TYP MAX 0.55 1.0 14.5 dBm dBm 12 17 (V67) 18 (V68) dB dB 16.0 16.5 Output IP3 at f = 2 GHz, ∆f = 1 MHz, VDS = 3 V, IDS = 5 mA dBm dBm 22 (V67) 23 (V68) Saturated Drain Current at VDS = 2 V, VGS = 0 V Gain at P1dB, f = 2 GHz VDS = 2 V, IDS = 10 mA VDS = 3 V, IDS = 20 mA VDS = 2 V, IDS = 5 mA, f = 2 GHz 16.5 mA 40 100 170 VP Pinch Off Voltage at VDS = 2 V, ID = 100 µA V -0.1 -0.8 -1.5 gm Transconductance at VDS = 2 V, ID = 5 mA mS 50 80 Gate to Source Leakage Current at VGS = -3 V µA 1 ˚C/W 833 IGSO RTH(CH-A) Thermal Resistance (Channel to Ambient) 20 Note: 1. Typical values of noise figures and associated gain are those obtained when 50% of the devices from a large number of lots were individually measured in a circuit with the input individually tuned to obtain the minimum value. Maximum values are criteria established on the production line as a "go-no-go" screening test with the fixture tuned for the "generic" type but not for each specimen. California Eastern Laboratories NE38018 ABSOLUTE MAXIMUM RATINGS1 (TA = 25°C) SYMBOLS PARAMETERS UNITS VDS Drain to Source Voltage V Gate Current µA 100 Gate to Source Voltage V -3 IDSS IG VGSO RATINGS 4 IDS Drain Current mA TCH Channel Temperature °C 125 TSTG Storage Temperature °C -65 to +125 mW 150 PT Total Power Dissipation Note: 1. Operation in excess of any one of these parameters may result in permanent damage. RECOMMENDED OPERATING CONDITIONS (TA = 25°C) SYMBOLS VDS PARAMETERS UNITS MIN TYP MAX V 1 2 3 ID Drain to Source Voltage Drain Current mA 2 5 30 Pin Input Power dBm 0 TYPICAL NOISE PARAMETERS (TA = 25°C) FREQ. NFOPT GA (GHz) (dB) (dB) VDS = 2 V, IDS = 5 mA 0.9 0.41 21.1 1.0 0.42 20.3 1.5 0.48 16.9 1.9 0.54 15.0 2.0 0.55 14.7 2.5 0.62 13.4 VDS = 2 V, IDS = 10 mA 0.9 0.37 22.0 1.0 0.38 21.8 1.5 0.44 17.6 1.9 0.49 15.6 2.0 0.50 15.5 2.5 0.56 13.9 VDS = 3 V, IDS = 5 mA 0.9 0.41 21.8 1.0 0.42 20.8 1.5 0.48 16.9 1.9 0.54 14.8 2.0 0.55 14.4 2.5 0.62 13.3 ΓOPT MAG ANG Rn/50 0.65 0.63 0.55 0.48 0.46 0.38 25.1 27.2 42.4 58.0 62.1 81.3 0.18 0.18 0.17 0.16 0.15 0.13 0.59 0.50 0.50 0.38 0.39 0.38 29.2 38.0 39.6 45.1 54.4 70.3 0.13 0.12 0.12 0.11 0.11 0.10 0.67 0.65 0.54 0.47 0.45 0.38 24.9 26.9 42.1 57.8 61.8 80.7 0.18 0.18 0.17 0.16 0.15 0.13 TYPICAL PERFORMANCE CURVES (TA = 25°C) NOISE FIGURE & ASSOCIATED GAIN vs. DRAIN CURRENT 18 Ga Noise Figure, NF (dB) 1.6 16 1.4 14 1.2 12 1.0 10 0.8 8 0.6 6 0.4 4 NF 0.2 2 0 0 5 10 15 20 Drain Current, ID (mA) 25 30 Total Power Dissipation, PT (mW) 1.8 200 20 VDS = 2V f = 2 GHz Associated Gain, GA (dB) 2.0 TOTAL POWER DISSIPATION vs. AMBIENT TEMPERATURE FREE AIR 150 100 50 RTH = 833˚C/W 0 20˚C 50 100 125˚C 150 Ambient Temperature, TA (˚C) 200 NE38018 TYPICAL PERFORMANCE CURVES (TA = 25°C) 100 300 80 240 60 180 40 120 20 60 Drain Current, IDS (mA) Drain Current, IDS (mA) 0.06 V 100 0.12 V 80 0.18 V 60 0.24 V 0.30 V 40 0.36 V 20 0.42 V 0.00 1.0 2.0 3.0 4.0 -800 5.0 -600 -400 -200 Drain Voltage, VDS (V) Gate to Source Voltage, VGS (mV) OUTPUT POWER, GAIN AND POWER ADDED EFFICIENCY vs. INPUT POWER VDS = 3 V, IDS = 20 mA, f = 2 GHz OUTPUT POWER AND INTERMODULATION PRODUCTS vs. INPUT POWER VDS = 3 V, IDS = 20 mA, f = 2 GHz 18 35 10 30 8 25 6 20 4 15 2 10 0 Power Out Efficiency Gain -2 -4 -15 -10 -5 0 Input Power, PIN (dBm) 0 -10 0 -20 -30 -20 -40 -40 -50 Output Power IM3 IM5 5 0 -20 Output Power, POUT (dBm) 40 12 Power Added Efficiency, η (%) 14 45 5 0.00 20 50 POUT @ 1 dB = 17 dBm Gain @ 1 dB = 16.5 dB Efficiency @ 1 dB = 38% PSAT @ 1 dB = 17.5 dBm 16 Output Power, POUT (dBm) Gain, GA (dB) IDSS = 97 mA GM = 80 mS 0.00 2 V, 5 mA 0.00 0.00 -60 -60 -20 -15 -10 -5 Input Power, PIN (dBm) 0 5 Intermodulation Product, IM3, IM5 (dBm) VGS = 0.00 V 120 Transconductance, gm (mS) DRAIN CURRENT AND TRANSCONDUCTANCE vs. GATE TO SOURCE VOLTAGE DC PERFORMANCE NE38018 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90° 120° j100 j25 60° 150° 30° j10 0 25 10 50 100 0 12 GHz -j10 180° 12 GHz S22 .10 GHz S11 .10 GHz S21 .10 GHz -j100 0° 12 GHz -150° -j25 S12 .10 GHz 12 GHz -30° -120° -60° -90° -j50 VDS = 2 V, IDS = 5 mA FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 0.992 1.027 0.999 0.981 0.964 0.876 0.773 0.686 0.604 0.542 0.496 0.472 0.476 0.506 0.548 0.603 0.677 0.750 0.800 0.829 S21 ANG -2.50 -10.20 -17.98 -24.47 -29.81 -56.41 -79.57 -100.40 -120.28 -140.30 -160.84 178.65 141.84 112.81 87.17 62.70 40.36 21.52 5.69 -9.17 MAG 6.847 6.717 6.698 6.640 6.518 5.830 5.119 4.506 4.005 3.590 3.239 2.941 2.464 2.109 1.833 1.600 1.382 1.184 1.011 0.873 S12 S22 K ANG MAG ANG MAG ANG 175.44 171.01 165.35 160.28 154.91 131.52 111.75 94.58 78.97 64.57 50.93 38.00 13.65 -8.88 -30.86 -52.62 -74.07 -94.38 -113.63 -132.22 0.009 0.017 0.025 0.033 0.041 0.073 0.096 0.114 0.127 0.138 0.147 0.155 0.169 0.183 0.199 0.212 0.223 0.229 0.231 0.232 86.79 84.51 79.74 76.53 72.59 56.83 44.71 35.02 26.80 19.51 12.72 6.47 -5.34 -16.40 -28.79 -42.18 -56.42 -71.03 -85.60 -100.40 0.642 0.626 0.632 0.632 0.623 0.561 0.493 0.430 0.370 0.314 0.263 0.219 0.167 0.154 0.161 0.207 0.307 0.422 0.511 0.571 -7.96 -11.36 -13.98 -17.71 -21.83 -40.01 -54.94 -67.65 -79.24 -90.98 -103.80 -118.63 -156.15 164.89 124.93 82.05 53.73 35.57 19.76 2.76 MAG1 (dB) 0.05 -0.16 0.00 0.06 0.12 0.28 0.42 0.54 0.67 0.77 0.87 0.94 1.04 1.09 1.11 1.13 1.10 1.03 0.98 0.95 28.63 25.95 24.23 22.99 22.03 19.04 17.28 16.01 15.02 14.18 13.45 12.80 10.46 8.79 7.60 6.59 6.03 6.04 6.43 5.78 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE38018 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90° 120° j100 j25 60° 150° 30° j10 0 10 25 50 100 S22 .10 GHz 0 12 GHz 12 GHz S21 .10 GHz 180° S11 .10 GHz 12 GHz S12 .10 GHz 0° -j10 12 GHz -150° -j100 -j25 -30° -120° -60° -90° -j50 VDS = 2 V, IDS = 10 mA FREQUENCY S11 (GHz) MAG 0.10 0.20 0.30 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 0.992 1.000 0.991 0.967 0.943 0.815 0.689 0.593 0.513 0.458 0.423 0.410 0.433 0.472 0.520 0.579 0.659 0.734 0.785 0.814 S21 ANG -3.80 -12.31 -21.04 -28.50 -34.68 -63.96 -88.19 -109.25 -129.18 -149.33 -169.94 169.75 134.29 106.93 82.83 59.50 38.07 19.78 4.28 -10.33 MAG 9.822 9.639 9.541 9.383 9.134 7.764 6.502 5.522 4.772 4.188 3.722 3.343 2.765 2.350 2.035 1.769 1.529 1.317 1.139 1.000 S12 S22 K ANG MAG ANG MAG ANG 174.93 169.20 162.65 156.82 150.85 125.49 105.45 88.71 73.87 60.34 47.65 35.63 12.86 -8.50 -29.55 -50.43 -70.98 -90.40 -109.06 -127.38 0.008 0.015 0.022 0.029 0.035 0.063 0.083 0.100 0.115 0.129 0.143 0.155 0.179 0.200 0.219 0.232 0.241 0.244 0.243 0.242 87.39 84.00 80.28 76.20 72.64 58.52 48.85 41.27 34.71 28.25 21.92 15.50 2.21 -11.13 -25.78 -41.12 -56.67 -72.00 -87.00 -102.03 0.487 0.477 0.477 0.475 0.464 0.397 0.334 0.280 0.231 0.187 0.147 0.116 0.102 0.128 0.167 0.239 0.342 0.445 0.520 0.567 -9.73 -13.87 -17.02 -21.39 -25.94 -45.59 -60.27 -72.14 -83.06 -95.23 -110.79 -132.15 170.07 127.00 91.67 59.52 38.95 24.63 10.69 -5.07 MAG1 (dB) 0.06 -0.14 0.05 0.12 0.19 0.40 0.58 0.71 0.82 0.90 0.96 1.00 1.05 1.07 1.08 1.09 1.07 1.03 0.99 0.98 30.8 28.1 26.4 25.1 24.1 20.9 19.0 17.4 16.2 15.1 14.2 13.0 10.6 9.1 8.0 7.0 6.4 6.3 6.7 6.2 Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE38018 TYPICAL SCATTERING PARAMETERS (TA = 25°C) j50 90° 120° j100 j25 60° 150° 30° j10 0 25 10 100 50 S22 .10 GHz 0 12 GHz 12 GHz S21 .10 GHz 180° S11 .10 GHz S12 .10 GHz 0° 12 GHz -j10 12 GHz -150° -30° -j100 -j25 -120° -60° -j50 -90° VDS = 2 V, IDS = 20 mA FREQUENCY S11 (GHz) 0.10 0.20 0.30 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S21 S12 MAG ANG MAG ANG MAG 0.992 1.000 0.982 0.952 0.918 0.758 0.620 0.523 0.448 0.400 0.375 0.370 0.405 0.449 0.501 0.564 0.647 0.724 0.776 0.805 -5.06 -14.26 -23.84 -32.12 -38.97 -70.06 -94.61 -115.52 -135.35 -155.49 -176.15 163.70 129.39 103.27 80.15 57.58 36.64 18.68 3.43 -11.10 12.743 12.486 12.265 11.944 11.531 9.340 7.527 6.235 5.294 4.587 4.045 3.611 2.967 2.513 2.170 1.882 1.625 1.402 1.220 1.081 174.22 167.43 160.10 153.54 147.07 120.51 100.66 84.55 70.45 57.62 45.60 34.20 12.46 -8.15 -28.58 -48.89 -68.85 -87.73 -105.84 -123.82 0.007 0.013 0.019 0.025 0.031 0.055 0.074 0.093 0.110 0.127 0.144 0.159 0.187 0.211 0.231 0.245 0.251 0.253 0.250 0.248 S22 ANG MAG ANG 88.57 84.68 80.49 77.09 73.91 62.14 54.30 47.65 41.25 34.62 27.79 20.78 6.21 -8.47 -24.24 -40.53 -56.68 -72.41 -87.59 -102.80 0.344 0.338 0.335 0.332 0.321 0.263 0.213 0.173 0.138 0.105 0.075 0.060 0.097 0.145 0.196 0.276 0.376 0.473 0.541 0.581 -11.92 -16.65 -19.97 -24.86 -29.61 -49.67 -63.22 -73.71 -83.99 -97.82 -121.02 -159.78 134.07 103.25 75.95 49.96 32.15 19.01 5.58 -9.91 K MAG1 0.08 -0.11 0.10 0.19 0.27 0.53 0.71 0.83 0.91 0.96 1.00 1.02 1.04 1.05 1.05 1.06 1.05 1.02 1.00 0.99 32.62 29.75 28.00 26.70 25.68 22.29 20.04 18.27 16.81 15.57 14.50 12.66 10.77 9.40 8.29 7.33 6.73 6.49 6.65 6.39 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE38018 TYPICAL SCATTERING PARAMETERS (TA = 25 °C) j50 90° 120° j100 j25 60° 150° 30° j10 0 25 10 100 50 S22 .10 GHz 0 S12 .10 GHz S21 .10 GHz 180° 12 GHz 0° 12 GHz 12 GHz S11 .10 GHz -j10 12 GHz -150° -j100 -j25 -30° -120° -60° -90° -j50 VDS = 3 V, IDS = 20 mA FREQUENCY S11 (GHz) 0.10 0.20 0.30 0.40 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 5.00 6.00 7.00 8.00 9.00 10.00 11.00 12.00 S21 S12 MAG ANG MAG ANG 0.991 1.000 0.982 0.953 0.920 0.761 0.623 0.525 0.450 0.401 0.374 0.369 0.402 0.446 0.498 0.561 0.645 0.723 0.776 0.806 -4.94 -14.12 -23.65 -31.83 -38.63 -69.55 -93.97 -114.82 -134.56 -154.62 -175.27 164.59 130.10 103.91 80.73 58.12 37.13 19.17 3.81 -10.76 12.631 12.376 12.164 11.856 11.451 9.300 7.511 6.229 5.295 4.593 4.052 3.620 2.979 2.527 2.185 1.899 1.643 1.419 1.234 1.091 174.25 167.54 160.26 153.75 147.30 120.79 100.94 84.81 70.69 57.84 45.81 34.39 12.59 -8.08 -28.56 -48.95 -69.05 -88.12 -106.45 -124.65 MAG 0.007 0.013 0.019 0.025 0.031 0.055 0.074 0.091 0.108 0.125 0.140 0.155 0.183 0.207 0.227 0.241 0.249 0.251 0.249 0.248 S22 ANG 87.26 83.63 80.29 77.02 73.59 61.65 53.68 47.11 40.91 34.43 27.75 20.95 6.58 -7.79 -23.38 -39.52 -55.59 -71.31 -86.55 `-101.85 MAG ANG 0.378 0.371 0.369 0.365 0.354 0.291 0.239 0.196 0.160 0.125 0.091 0.067 0.082 0.126 0.174 0.253 0.355 0.455 0.526 0.569 -11.30 -15.83 -19.06 -23.73 -28.39 -47.62 -60.59 -70.43 -79.67 -91.32 -109.07 -139.28 146.70 109.81 79.83 52.19 33.99 20.78 7.29 -8.23 K MAG1 0.07 -0.10 0.10 0.19 0.27 0.52 0.70 0.82 0.91 0.96 1.00 1.02 1.04 1.05 1.06 1.06 1.05 1.02 0.99 0.98 32.84 29.78 27.99 26.69 25.68 22.32 20.08 18.34 16.89 15.66 14.60 12.72 10.84 9.48 8.38 7.42 6.84 6.66 6.95 6.44 (dB) Note: 1. Gain Calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE38018 NE38018 NONLINEAR MODEL SCHEMATIC CGD_PKG 0.003pF GATE Q1 LG_PKG LG 0.55nH 0.7nH LD LD_PKG 0.87nH 0.1nH DRAIN CDS_PKG 0.15pF CCG_PKG 0.12pF CDX 0.04pF LS 0.28nH LS_PKG 0.05nH CGX 0.12pF SOURCE FET NONLINEAR MODEL PARAMETERS (1) UNITS Parameters Q1 Parameters Q1 Parameter VTO -0.5935 RG 2.5 time seconds Units VTOSC 0 RD 3 capacitance farads ALPHA 7 RS 1.5 inductance henries BETA 1.14 RGMET 0 resistance ohms GAMMA 0.044 KF 0 voltage volts GAMMADC 0.03 AF 1 current amps Q 3.5 TNOM 27 DELTA 0 XTI 3 VBI 0.8 EG 1.43 IS 1e-14 VTOTC 0 N 1.3 BETATCE 0 RIS 2.3 FFE 1 RID 2.3 TAU 1e-12 CDS 0.1e-12 RDB 5000 CBS 1e-11 CGSO 1.2e-12 CGDO 0.145e-12 DELTA 1 0.3 DELTA 2 0.2 FC 0.5 VBR Infinity (1) Series IV Libra TOM Model MODEL RANGE Frequency: Bias: Power: Date: 0.5 to 12 GHz VDS = 2 V to 3 V, ID = 10 mA to 40 mA IDSS = 97 mA @ VGS = 0 V, VDS = 2 V VDS = 2 V, ID = 20 mA, 2 GHz 4/98 NE38018 ORDERING INFORMATION OUTLINE DIMENSIONS (Units in mm) PART NUMBER QTY IDSS RANGE (mA) MARKING Bulk up to 3 K 40-165 V67 or V68 PACKAGE OUTLINE 18 NE38018 2.1 ± 0.2 +0.10 0.3 -0.05 (LEADS 2, 3, 4) 1.25 ± 0.1 0.65 2 0.60 V 68 2.0 ± 0.2 1 NE38018-TI-67 3 K/Reel 40-90 V67 NE38018-TI-68 3 K/Reel 70-170 V68 3 0.65 1.3 0.65 4 Pin Connections 1. Source 2. Gate 3. Source 4. Drain +0.10 0.4 -0.05 0.3 0.9 ± 0.1 0 to 0.1 +0.10 0.15 -0.05 EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM DATA SUBJECT TO CHANGE WITHOUT NOTICE 10/11/2000