LESHAN RADIO COMPANY, LTD. General Purpose Transistors NPN Silicon ●FEATURES 1) We declare that the material of product compliant with RoHS requirements and Halogen Free. 2) S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable. LMBT3904N3T5G S-LMBT3904N3T5G 3 ●DEVICE MARKING AND RESISTOR VALUES Device Marking Shipping LMBT3904N3T5G 1A 10000/Tape&Reel 2 ●MAXIMUM RATINGS(Ta = 25℃) Parameter Collector–Emitter Voltage Collector–Base Voltage Emitter–Base Voltage Collector Current — Continuous ●THERMAL CHARACTERISTICS Total Device Dissipation, FR−5 Board (Note 1) @ TA = 25°C Derate above 25°C Thermal Resistance, Junction–to–Ambient(Note 1) Junction and Storage temperature Symbol VCEO VCBO VEBO IC Limits 40 60 6 200 Unit Vdc Vdc Vdc mAdc 1 SOT883 3 COLLECTOR 1 BASE PD 250 mW RΘJA 2 500 mW/℃ ℃/W TJ,Tstg −55∼+150 ℃ Min. Typ. Max. 40 – – 60 – – 2 EMITTER 1. FR–5 = 1.0×0.75×0.062 in. ●ELECTRICAL CHARACTERISTICS (Ta= 25℃) OFF CHARACTERISTICS Characteristic Symbol VBR(CEO) Collector–Emitter Breakdown Voltage (IC = 1.0 mAdc, I B = 0) VBR(CBO) Collector–Base Breakdown Voltage (I C = 10 μAdc, I E = 0) Emitter–Base Breakdown Voltage VBR(EBO) (I E = 10 μAdc, I C = 0) Collector Cutoff Current ICEX ( V CE = 30 Vdc, V EB = 3.0Vdc) Base Cutoff Current IBL (V CE = 30 Vdc, V EB = 3.0 Vdc) ON CHARACTERISTICS (Note 2.) DC Current Gain hFE (I C = 0.1 mAdc, V CE = 1.0 Vdc) (I C = 1.0 mAdc, V CE = 1.0 Vdc) (I C = 10 mAdc, V CE = 1.0 Vdc) (I C = 50 mAdc, V CE = 1.0 Vdc) (I C = 100 mAdc, V CE = 1.0 Vdc) June,2015 Unit V V V 6 – – – – 50 – – 50 40 70 100 60 30 – – – – – – – 300 – – nA nA Rev.A 1/5 LESHAN RADIO COMPANY, LTD. LMBT3904N3T5G,S-LMBT3904N3T5G ON CHARACTERISTICS (Note 2.) Characteristic Collector–Emitter Saturation Voltage(2) (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) Base–Emitter Saturation Voltage (I C = 10 mAdc, I B = 1.0 mAdc) (I C = 50mAdc, I B = 5.0 mAdc) SMALL–SIGNAL CHARACTERISTICS Current–Gain — Bandwidth Product (I C = 10mAdc, V CE= 20Vdc, f = 100MHz) Output Capacitance (V CB = 5.0 Vdc, I E = 0, f = 1.0 MHz) Input Capacitance (V EB = 0.5 Vdc, I C = 0, f = 1.0 MHz) Input Impedance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Voltage Feedback Ratio (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Small–Signal Current Gain (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Output Admittance (V CE= 10 Vdc, I C = 1.0 mAdc, f = 1.0 kHz) Noise Figure (VCE=5V, IC=100μA, RS=1.0k Ω , f =1.0kHz) SWITCHING CHARACTERISTICS Delay Time (V CC = 3.0 Vdc, V BE= – 0.5 Vdc,I C = 10 mAdc, I B1 = 1.0 Rise Time mAdc) Symbol VCE(sat) Typ. Max. – – – – 0.2 0.3 0.65 – – – 0.85 0.95 300 – – – – 4 – – 8 VBE(sat) Unit V V fT MHz Cobo pF Cibo pF kΩ hie – 1 10 X 10 –4 hre 0.5 – 8 100 – 400 1 – 40 – – 5 td – – 35 tr – – 35 ts – – 200 tf – – 50 hfe μmhos hoe NF Storage Time Fall Time Min. (V CC = 3.0 Vdc, I C = 10 mAdc,I B1 = I B2 = 1.0 mAdc) dB ns 2. Pulse Test: Pulse Width <300 μs, Duty Cycle <2.0%. DUTY CYCLE = 2% 300 ns +3 V +10.9 V 275 10 < t1 < 500 ms DUTY CYCLE = 2% t1 +3 V +10.9 V 275 10 k 10 k 0 -0.5 V CS < 4 pF* < 1 ns CS < 4 pF* 1N916 -9.1 V′ < 1 ns * Total shunt capacitance of test jig and connectors Figure 1. Delay and Rise Time Equivalent Test Circuit June,2015 Figure 2. Storage and Fall Time Equivalent Test Circuit Rev.A 2/5 LESHAN RADIO COMPANY, LTD. LMBT3904N3T5G,S-LMBT3904N3T5G ELECTRICAL CHARACTERISTICS CURVES 180 10 C,Capacitance(pF） HFE, DC Current Gain 160 140 120 100 80 60 40 20 0 1 0.1 1 10 VR, Reverse Voltage (V) Cobo 0.1 10 IC, Collector Current (mA) Cibo Figure 3. Capacitance Figure 4. Current Gain 1 VCE=1V 100 10 1 0.1 1 10 IC, Collector Current (mA) 25℃ 150℃ Figure 5. DC Current Gain June,2015 100 -55℃ VCE, Collector Emitter Voltage (V) 1000 HFE, DC Current Gain 1 0.8 0.6 0.4 0.2 0 0.001 IC=1mA 0.01 0.1 1 IB, Base Current (mA) IC=10mA IC=30mA 10 IC=100mA Figure 6. Collector Saturation Region Rev.A 3/5 LESHAN RADIO COMPANY, LTD. LMBT3904N3T5G,S-LMBT3904N3T5G ELECTRICAL CHARACTERISTICS CURVES IC/IB=10 2 1.5 1 0.5 0 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ 1 VBEsat, Base-Emitter Saturation Voltage(V) VCEsat, Collector-Emitter Saturation Voltage (V) 2.5 1.4 1.2 IC/IB=10 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) -55℃ 25℃ Figure 7. VCE(sat) vs. IC 150℃ -55℃ Figure 8. VBE(sat) vs. IC 1.4 VBE(on), Base-Emitter Voltage(V) VCE=1V 1.2 1 0.8 0.6 0.4 0.2 0 0.0001 0.001 0.01 0.1 IC, Collector Current(A) 25℃ 150℃ 1 -55℃ Figure 9. VBE(on) vs. IC June,2015 Rev.A 4/5 1 LESHAN RADIO COMPANY, LTD. LMBT3904N3T5G,S-LMBT3904N3T5G SOT-883 DIMENSION OUTLINE: June,2015 Unit:mm Rev.A 5/5