QFET ® FQD30N06L / FQU30N06L 60V LOGIC N-Channel MOSFET General Description Features These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for low voltage applications such as automotive, DC/ DC converters, and high efficiency switching for power management in portable and battery operated products. • • • • • • • • 24A, 60V, RDS(on) = 0.039Ω @ VGS = 10V Low gate charge ( typical 15 nC) Low Crss ( typical 50 pF) Fast switching 100% avalanche tested Improved dv/dt capability 150oC maximum junction temperature rating Low level gate drive requirements allowing direct operation form logic drivers • RoHS Compliant D D ! " G S I-PAK D-PAK FQD Series G D S Absolute Maximum Ratings Symbol VDSS ID ! " " " G! FQU Series ! S TC = 25°C unless otherwise noted Parameter Drain-Source Voltage - Continuous (TC = 25°C) Drain Current FQD30N06L / FQR30N06L 60 Units V 24 A - Continuous (TC = 100°C) 15 A 96 A IDM Drain Current VGSS Gate-Source Voltage EAS Single Pulsed Avalanche Energy (Note 2) IAR Avalanche Current (Note 1) 24 A EAR Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation (TA = 25°C) * (Note 1) 4.4 7.0 2.5 mJ V/ns W 44 0.35 -55 to +150 W W/°C °C 300 °C dv/dt PD - Pulsed (Note 1) (Note 3) Power Dissipation (TC = 25°C) TJ, TSTG TL - Derate above 25°C Operating and Storage Temperature Range Maximum lead temperature for soldering purposes, 1/8" from case for 5 seconds ± 20 V 400 mJ Thermal Characteristics Symbol RθJC Parameter Thermal Resistance, Junction-to-Case Typ -- Max 2.85 Units °C/W RθJA RθJA Thermal Resistance, Junction-to-Ambient * -- 50 °C/W Thermal Resistance, Junction-to-Ambient -- 110 °C/W * When mounted on the minimum pad size recommended (PCB Mount) ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD30N06L / FQU30N06L January 2009 Symbol TA = 25°C unless otherwise noted Parameter Test Conditions Min Typ Max Units Off Characteristics BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA 60 -- -- V ∆BVDSS / ∆TJ Breakdown Voltage Temperature Coefficient ID = 250 µA, Referenced to 25°C -- 0.07 -- V/°C VDS = 60 V, VGS = 0 V -- -- 1 µA VDS = 48 V, TC = 125°C -- -- 10 µA Gate-Body Leakage Current, Forward VGS = 20 V, VDS = 0 V -- -- 100 nA Gate-Body Leakage Current, Reverse VGS = -20 V, VDS = 0 V -- -- -100 nA Gate Threshold Voltage VDS = 5 V, ID = 250 µA 1.0 -- 2.5 V RDS(on) Static Drain-Source On-Resistance VGS = 10 V, ID = 12 A VGS = 5 V, ID = 12 A --- 0.031 0.038 0.039 0.047 Ω gFS Forward Transconductance VDS = 25 V, ID = 12 A -- 23 -- S -- 800 1040 pF -- 270 350 pF -- 50 65 pF IDSS IGSSF IGSSR Zero Gate Voltage Drain Current On Characteristics VGS(th) (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance VDS = 25 V, VGS = 0 V, f = 1.0 MHz Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time Qg Total Gate Charge Qgs Gate-Source Charge Qgd Gate-Drain Charge VDD = 30 V, ID = 16 A, RG = 25 Ω (Note 4, 5) VDS = 48 V, ID = 32 A, VGS = 5 V (Note 4, 5) -- 15 40 ns -- 210 430 ns -- 55 120 ns -- 110 230 ns -- 15 20 nC -- 3.5 -- nC -- 8.5 -- nC Drain-Source Diode Characteristics and Maximum Ratings IS Maximum Continuous Drain-Source Diode Forward Current -- -- 24 A ISM -- -- 96 A VSD Maximum Pulsed Drain-Source Diode Forward Current VGS = 0 V, IS = 24 A Drain-Source Diode Forward Voltage -- -- 1.5 V trr Reverse Recovery Time -- 55 -- ns Qrr Reverse Recovery Charge VGS = 0 V, IF = 32 A, dIF / dt = 100 A/µs -- 80 -- nC (Note 4) Notes: 1. Repetitive Rating : Pulse width limited by maximum junction temperature 2. L = 0.8mH, IAS = 24A, VDD = 25V, RG = 25 Ω, Starting TJ = 25°C 3. ISD ≤ 32A, di/dt ≤ 300A/us, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test : Pulse width ≤ 300us, Duty cycle ≤ 2% 5. Essentially independent of operating temperature ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD30N06L / FQU30N06L Electrical Characteristics FQD30N06L / FQU30N06L Typical Characteristics VGS 10.0 V 8.0 V 6.0 V 5.0 V 4.5 V 4.0 V 3.5 V Bottom : 3.0 V ID, Drain Current [A] ID, Drain Current [A] Top : 1 10 1 10 150℃ 25℃ ※ Notes : 1. 250μ s Pulse Test 2. TC = 25℃ ※ Notes : 1. VDS = 25V 2. 250μ s Pulse Test -55℃ 0 0 10 -1 10 0 10 1 10 0 10 2 4 6 8 10 VGS, Gate-Source Voltage [V] VDS, Drain-Source Voltage [V] Figure 1. On-Region Characteristics Figure 2. Transfer Characteristics 60 IDR , Reverse Drain Current [A] R DS(ON) [mΩ ], Drain-Source On-Resistance 80 VGS = 10V VGS = 5V 40 20 ※ Note : TJ = 25℃ 0 0 20 40 60 80 100 1 10 150℃ 0 10 120 0.4 0.6 ID, Drain Current [A] 1.2 1.4 12 Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 10 VDS = 30V Coss Ciss ※ Notes : 1. VGS = 0 V 2. f = 1 MHz 1000 Crss 500 V GS , Gate-Source Voltage [V] Capacitance [pF] 1.0 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2000 0 -1 10 0.8 VSD, Source-Drain voltage [V] Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 1500 ※ Notes : 1. VGS = 0V 2. 250μ s Pulse Test 25℃ VDS = 48V 8 6 4 2 ※ Note : ID = 32A 0 0 10 1 Figure 5. Capacitance Characteristics ©2009 Fairchild Semiconductor Corporation 0 5 10 15 20 25 30 10 VDS, Drain-Source Voltage [V] QG, Total Gate Charge [nC] Figure 6. Gate Charge Characteristics Rev. A2. January 2009 (Continued) 1.2 2.5 2.0 1.1 RDS(ON) , (Normalized) Drain-Source On-Resistance BV DSS , (Normalized) Drain-Source Breakdown Voltage FQD30N06L / FQU30N06L Typical Characteristics 1.5 1.0 1.0 ※ Notes : 1. VGS = 0 V 2. ID = 250 μ A 0.9 0.8 -100 -50 0 50 100 0.5 150 ※ Notes : 1. VGS = 10 V 2. ID = 12 A 0.0 -100 200 -50 0 50 100 150 200 o o TJ, Junction Temperature [ C] TJ, Junction Temperature [ C] Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. On-Resistance Variation vs. Temperature 25 Operation in This Area is Limited by R DS(on) 20 2 100 µ s ID, Drain Current [A] I D , Drain Current [A] 10 1 ms 10 ms 1 10 DC 0 10 ※ Notes : 15 10 5 o 1. TC = 25 C o 2. TJ = 150 C 3. Single Pulse -1 10 -1 0 10 1 10 0 25 2 10 10 50 VDS, Drain-Source Voltage [V] Figure 9. Maximum Safe Operating Area 100 125 150 Figure 10. Maximum Drain Current vs. Case Temperature D = 0 .5 10 0 0 .2 ※ N otes : 1 . Z θ J C( t ) = 2 . 8 5 ℃ /W M a x . 2 . D u t y F a c t o r , D = t 1 /t 2 3 . T J M - T C = P D M * Z θ J C( t ) 0 .1 0 .0 5 10 PDM 0 .0 2 0 .0 1 -1 JC (t), T h e rm a l R e s p o n s e 75 TC, Case Temperature [℃] t1 s in g le p u ls e Z θ t2 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 1 t 1 , S q u a r e W a v e P u ls e D u r a tio n [ s e c ] Figure 11. Transient Thermal Response Curve ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD30N06L / FQU30N06L Gate Charge Test Circuit & Waveform VGS Same Type as DUT 50KΩ Qg 200nF 12V 5V 300nF VDS VGS Qgs Qgd DUT 3mA Charge Resistive Switching Test Circuit & Waveforms VDS RL VDS 90% VDD VGS RG VGS DUT 5V 10% tr td(on) td(off) t on tf t off Unclamped Inductive Switching Test Circuit & Waveforms BVDSS 1 EAS = ---- L IAS2 -------------------2 BVDSS - VDD L VDS BVDSS IAS ID RG VDD DUT 10V tp ©2009 Fairchild Semiconductor Corporation ID (t) VDS (t) VDD tp Time Rev. A2. January 2009 FQD30N06L / FQU30N06L Peak Diode Recovery dv/dt Test Circuit & Waveform DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VSD VDD Body Diode Forward Voltage Drop ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD30N06L / FQU30N06L Mechanical Dimensions TO-252 (DPAK) (FS PKG Code 36) 1:1 Scale 1:1 on letter size paper Dimensions shown below are in: millimeters Part Weight per unit (gram): 0.33 ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 FQD30N06L / FQU30N06L Mechanical Dimensions I - PAK Dimensions in Millimeters ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009 TRADEMARKS The following includes registered and unregistered trademarks and service marks, owned by Fairchild Semiconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trademarks. FRFET® Global Power ResourceSM Green FPS™ Green FPS™ e-Series™ GTO™ IntelliMAX™ ISOPLANAR™ MegaBuck™ MICROCOUPLER™ MicroFET™ MicroPak™ MillerDrive™ MotionMax™ Motion-SPM™ OPTOLOGIC® OPTOPLANAR® Build it Now™ CorePLUS™ CorePOWER™ CROSSVOLT™ CTL™ Current Transfer Logic™ EcoSPARK® EfficentMax™ EZSWITCH™ * ™ ® tm Fairchild® Fairchild Semiconductor® FACT Quiet Series™ FACT® FAST® FastvCore™ FlashWriter® * FPS™ F-PFS™ ® tm PDP SPM™ Power-SPM™ PowerTrench® PowerXS™ Programmable Active Droop™ QFET® QS™ Quiet Series™ RapidConfigure™ ™ Saving our world, 1mW /W /kW at a time™ SmartMax™ SMART START™ SPM® STEALTH™ SuperFET™ SuperSOT™-3 SuperSOT™-6 SuperSOT™-8 SupreMOS™ SyncFET™ ® tm TinyBoost™ TinyBuck™ TinyLogic® TINYOPTO™ TinyPower™ TinyPWM™ TinyWire™ μSerDes™ UHC® Ultra FRFET™ UniFET™ VCX™ VisualMax™ XS™ The Power Franchise® * EZSWITCH™ and FlashWriter® are trademarks of System General Corporation, used under license by Fairchild Semiconductor. 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Obsolete Not In Production Datasheet contains specifications on a product that is discontinued by Fairchild Semiconductor. The datasheet is for reference information only. Rev. I37 ©2009 Fairchild Semiconductor Corporation Rev. A2. January 2009