Freescale MRF9030MR1 The rf sub-micron mosfet line rf power field effect transistors n-channel enhancement-mode lateral mosfet Datasheet

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SEMICONDUCTOR TECHNICAL DATA
The RF Sub-Micron MOSFET Line
N-Channel Enhancement-Mode Lateral MOSFETs
Freescale Semiconductor, Inc...
Designed for broadband commercial and industrial applications with frequencies up to 1.0 GHz. The high gain and broadband performance of these devices
make them ideal for large-signal, common-source amplifier applications in
26 volt base station equipment.
945 MHz, 30 W, 26 V
LATERAL N-CHANNEL
BROADBAND
RF POWER MOSFETs
• Typical Performance at 945 MHz, 26 Volts
Output Power — 30 Watts PEP
Power Gain — 20 dB
Efficiency — 41% (Two Tones)
IMD — -31 dBc
• Integrated ESD Protection
• Capable of Handling 5:1 VSWR, @ 26 Vdc, 945 MHz, 30 Watts (CW)
Output Power
CASE 1265-08, STYLE 1
TO-270-2
PLASTIC
MRF9030MR1
• Excellent Thermal Stability
• Characterized with Series Equivalent Large-Signal Impedance Parameters
• Dual-Lead Boltdown Plastic Package Can Also Be Used As Surface
Mount.
• TO-272-2 in Tape and Reel. R1 Suffix = 500 Units per 44 mm,
13 inch Reel.
• TO-270-2 in Tape and Reel. R1 Suffix = 500 Units per 24 mm,
13 inch Reel.
CASE 1337-03, STYLE 1
TO-272-2
PLASTIC
MRF9030MBR1
MAXIMUM RATINGS
Symbol
Value
Unit
Drain-Source Voltage
Rating
VDSS
65
Vdc
Gate-Source Voltage
VGS
+ 15, - 0.5
Vdc
Total Device Dissipation @ TC = 25°C
Derate above 25°C
PD
139
0.93
Watts
W/°C
Storage Temperature Range
Tstg
- 65 to +150
°C
Operating Junction Temperature
TJ
175
°C
Symbol
Max
Unit
RθJC
1.08
°C/W
THERMAL CHARACTERISTICS
Characteristic
Thermal Resistance, Junction to Case
ESD PROTECTION CHARACTERISTICS
Test Conditions
Human Body Model
Class
1 (Minimum)
Machine Model
M2 (Minimum)
Charge Device Model
MRF9030MR1
MRF9030MBR1
C7 (Minimum)
C6 (Minimum)
MOISTURE SENSITIVITY LEVEL
Test Methodology
Per JESD 22-A113
Rating
3
NOTE - CAUTION - MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and
packaging MOS devices should be observed.
REV 6
MOTOROLA
RF DEVICE DATA
 Motorola,
Inc. 2003
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MRF9030MR1 MRF9030MBR1
1
Freescale Semiconductor, Inc.
ELECTRICAL CHARACTERISTICS (TC = 25°C unless otherwise noted)
Characteristic
Symbol
Min
Typ
Max
Unit
Zero Gate Voltage Drain Leakage Current
(VDS = 65 Vdc, VGS = 0 Vdc)
IDSS
—
—
10
µAdc
Zero Gate Voltage Drain Leakage Current
(VDS = 26 Vdc, VGS = 0 Vdc)
IDSS
—
—
1
µAdc
Gate-Source Leakage Current
(VGS = 5 Vdc, VDS = 0 Vdc)
IGSS
—
—
1
µAdc
Gate Threshold Voltage
(VDS = 10 Vdc, ID = 100 µAdc)
VGS(th)
2
2.9
4
Vdc
Gate Quiescent Voltage
(VDS = 26 Vdc, ID = 250 mAdc)
VGS(Q)
3
3.8
5
Vdc
Drain-Source On-Voltage
(VGS = 10 Vdc, ID = 0.7 Adc)
VDS(on)
—
0.23
0.4
Vdc
gfs
—
2.7
—
S
Input Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Ciss
—
49
—
pF
Output Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Coss
—
27
—
pF
Reverse Transfer Capacitance
(VDS = 26 Vdc ± 30 mV(rms)ac @ 1 MHz, VGS = 0 Vdc)
Crss
—
1.2
—
pF
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
Gps
18
20
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
η
37
41
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IMD
—
-31
-28
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 945.0 MHz, f2 = 945.1 MHz)
IRL
—
-13
-9
dB
Two-Tone Common-Source Amplifier Power Gain
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
Gps
—
20
—
dB
Two-Tone Drain Efficiency
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
η
—
40.5
—
%
3rd Order Intermodulation Distortion
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IMD
—
-31
—
dBc
Input Return Loss
(VDD = 26 Vdc, Pout = 30 W PEP, IDQ = 250 mA,
f1 = 930.0 MHz, f2 = 930.1 MHz and f1 = 960.0 MHz,
f2 = 960.1 MHz)
IRL
—
-12
—
dB
OFF CHARACTERISTICS
Freescale Semiconductor, Inc...
ON CHARACTERISTICS
Forward Transconductance
(VDS = 10 Vdc, ID = 2 Adc)
DYNAMIC CHARACTERISTICS
FUNCTIONAL TESTS (In Motorola Test Fixture)
MRF9030MR1 MRF9030MBR1
2
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
Z1
Z2
Z3
Z4
Z5
Z6
Z7
Z8
Z9
Z10
0.260″
0.240″
0.500″
0.200″
0.330″
0.140″
0.040″
0.090″
0.370″
0.290″
0.130″
0.210″
x 0.060″ Microstrip
x 0.060″ Microstrip
x 0.100″ Microstrip
x 0.270″ Microstrip
x 0.270″ Microstrip
x 0.270″ x 0.520″, Taper
x 0.520″ Microstrip
x 0.520″ Microstrip
x 0.520″ Microstrip (MRF9030MR1)
x 0.520″ Microstrip (MRF9030MBR1)
x 0.520″ Microstrip (MRF9030MR1)
x 0.520″ Microstrip (MRF9030MBR1)
Z11
Z12
Z13
Z14
Z15
Z16
Z17
Z18
Board
0.360″ x 0.270″ Microstrip
0.050″ x 0.270″ Microstrip
0.110″ x 0.060″ Microstrip
0.220″ x 0.060″ Microstrip
0.100″ x 0.060″ Microstrip
0.870″ x 0.060″ Microstrip
0.240″ x 0.060″ Microstrip
0.340″ x 0.060″ Microstrip
Taconic RF-35-0300, εr = 3.5
Figure 1. 930-960 MHz Broadband Test Circuit Schematic
Table 1. 930 - 960 MHz Broadband Test Circuit Component Designations and Values
Part
Description
Value, P/N or DWG
Manufacturer
B1
Short Ferrite Bead, Surface Mount
95F786
Newark
B2
Long Ferrite Bead, Surface Mount
95F787
Newark
C1, C7, C14, C15
47 pF Chip Capacitors, B Case
100B470JP 500X
ATC
C2
0.6-4.5 Variable Capacitor, Gigatrim
44F3360
Newark
C3, C11
3.9 pF Chip Capacitors, B Case
100B3R6BP 500X
ATC
C4, C12
0.8-8.0 Variable Capacitors, Gigatrim
44F3360
Newark
C5, C6
6.8 pF Chip Capacitors, B Case
100B7R5JP 500X
ATC
C8, C16, C17
10 µF, 35 V Tantulum Chip Capacitors
93F2975
Newark
C9, C10
10 pF Chip Capacitors, B Case
100B100JP 500X
ATC
C13
1.8 pF Chip Capacitor, B Case (MRF9030MR1)
0.6-4.5 Variable Capacitor, Gigatrim (MRF9030MBR1)
100B1R8BP
44F3360
ATC
Newark
C18
220 µF Electrolytic Chip Capacitor
14F185
Newark
L1, L2
12.5 nH Coilcraft Inductors
A04T-5
Coilcraft
WB1, WB2
20 mil Brass Shim (0.250 x 0.250)
RF-Design Lab
RF-Design Lab
PCB
Etched Circuit Board
900 MHz µ250/Viper Rev 02
DSelectronics
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1
3
Freescale Semiconductor, Inc.
CUT OUT AREA
900 MHz
Rev 02
Figure 2. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MR1)
CUT OUT AREA
Freescale Semiconductor, Inc...
MRF9030M
Figure 3. 930-960 MHz Broadband Test Circuit Component Layout (MRF9030MBR1)
MRF9030MR1 MRF9030MBR1
4
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc.
0;;
(;, ;'")
η
! "#
$%& ! ' ( )
* ! +,
-$ $./0 123 $./ 45#6
7.8
0;
;( 44;'")
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h 0;,
(( :;'<)
TYPICAL CHARACTERISTICS
Figure 4. Class AB Broadband Circuit Performance
=
+,
0;;
=
! "#
9 ! 23
9 ! = 23
+,
=
=
$%&0
(;, ;'")
?" ?"/?
&> ?"/?
&> ?"/?
$%&0
( ', 4) (
Figure 7. Intermodulation Distortion Products
versus Output Power
MOTOROLA RF DEVICE DATA
( ', 4) (
Figure 6. Intermodulation Distortion versus
Output Power
=
! "#
+, 9 ! 23
9 ! = 23
$%&0
0;;
;'"#)
;4
( , +,
=
( ', 4) (
! "#
* ! +,
9 ! 23
9 ! = 23
+,
Figure 5. Power Gain versus Output Power
* ! +,
! "#
* ! +,
9 ! 23
η
=
$%&0
η0;, ;(( :;'<)
( , +,
* ! +,
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;4
;'"#)
=
0 Freescale Semiconductor, Inc...
90 (* ( : '23)
( ', 4) ,=
Figure 8. Power Gain and Efficiency versus
Output Power
For More Information On This Product,
Go to: www.freescale.com
MRF9030MR1 MRF9030MBR1
5
! "#
* ! +,
9 ! 23
9 ! = 23
η
$%&0
=
η0;, ;(( :;'<)
( , ;4 0;;
(;, ;'")
0 ;'"#)
Freescale Semiconductor, Inc.
( ', 4) (
Freescale Semiconductor, Inc...
Figure 9. Power Gain, Efficiency and IMD
versus Output Power
MRF9030MR1 MRF9030MBR1
6
MOTOROLA RF DEVICE DATA
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Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
$ ! Ω
$%?#/
9 ! 23
A$5"
9 ! 23
9 ! 23
9 ! 23
! 0 * ! +,0 $%& ! 5&& ' ( )
f
MHz
Zsource
Ω
Zload
Ω
930
1.07 + j0.160
3.53 - j0.20
945
1.14 + j0.385
3.41 - j0.24
960
1.17 + j0.170
3.60 - j0.17
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
$&/@
= Test circuit impedance as measured
from drain to ground.
A$5" -5 #>$/. B5/" $. &?5"/$99 B/&-//. 857.0 $%&%&
$-/?0 "?57. /997#7/.#C 5." 7.&/?+$"%A5&7$. "7&$?&7$.=
%&%&
5&#>7.8
/&-$?1
/D7#/
."/?
/&
.%&
5&#>7.8
/&-$?1
Z
source
Z
load
Figure 10. Series Equivalent Input and Output Impedance (MRF9030MR1)
MOTOROLA RF DEVICE DATA
For More Information On This Product,
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MRF9030MR1 MRF9030MBR1
7
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
$ ! Ω
A$5"
$%?#/
9 ! 23
9 ! 23
9 ! 23
9 ! 23
! 0 * ! +,0 $%& ! 5&& ' ( )
f
MHz
Zsource
Ω
Zload
Ω
930
1.0 - j0.18
3.05 - j0.09
945
1.0 - j0.10
3.00 - j0.07
960
1.0 - j0.03
2.95 - j0.03
Zsource = Test circuit impedance as measured from
gate to ground.
Zload
$&/@
= Test circuit impedance as measured
from drain to ground.
A$5" -5 #>$/. B5/" $. &?5"/$99 B/&-//. 857.0 $%&%&
$-/?0 "?57. /997#7/.#C 5." 7.&/?+$"%A5&7$. "7&$?&7$.=
%&%&
5&#>7.8
/&-$?1
/D7#/
."/?
/&
.%&
5&#>7.8
/&-$?1
Z
source
Z
load
Figure 11. Series Equivalent Input and Output Impedance (MRF9030MBR1)
MRF9030MR1 MRF9030MBR1
8
MOTOROLA RF DEVICE DATA
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NOTES
MOTOROLA RF DEVICE DATA
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MRF9030MR1 MRF9030MBR1
9
Freescale Semiconductor, Inc.
PACKAGE DIMENSIONS
E1
B
2X
E4
555
D
Freescale Semiconductor, Inc...
555
2X
D3
,
2X
,
PIN ONE ID
D1
b1
E
A
E5
E3
PIN 2
D2
PIN 3
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
ÇÇÇÇ
EXPOSED
HEATSINK AREA
PIN 1
DIM
A
A1
A2
D
D1
D2
D3
E
E1
E2
E3
E4
E5
F
b1
c1
aaa
BOTTOM VIEW
F
c1 H
DATUM
PLANE
(4@
= ( 4 @ 2=
= ( ( ( 4 4 , (, (4
( ,4( :==
= , , ( 2 4 , ( ,
(,
, 4 ( 2 2( (, 2((
2( (, (E 4 2( ,4 : , 2(
2( , (=
= ( 4 4 “F , “(F (
4 = , ,( 4
4 = ( 4(= ( 4 4 “F , “(F ( 4, 2 , ,( ( (6
( , , , ( 2=
= ( 4 B (4
( ,,
4 = , ,( ,,
4 42, ( =
, (E(44
2( B ( 4 , ,E , (,
=
= , 4 , , ( ( ( ( ,
, , ( 2=
= ( 4 , , (4 2 ( “GF :=
= ( 4 4 “F , “(F (
4 = , ,( 4
4 = ( 4(= ( 4 4 “F , “(F ( 4, 2 , ,( ( (6
( , , , ( =
ZONE J
A
A1
INCHES
MIN
MAX
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=;4
=
=
=
=
=
MILLIMETERS
MIN
MAX
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=
=;4
=
=
=
=
=
4 :( @
= ,
= , (
= 4 (
2X
A2
NOTE 7
E2
E5
D
CASE 1265-08
ISSUE G
TO-270-2
PLASTIC
MRF9030MR1
MRF9030MR1 MRF9030MBR1
10
MOTOROLA RF DEVICE DATA
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2X
555
A
E1
B
r1
, GATE
LEAD
Freescale Semiconductor, Inc...
D1
2X
b1
555
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
ÉÉÉÉ
DRAIN
LEAD
D
,
2
E
DRAIN ID
PIN 3
1
NOTE 8
E2
VIEW Y-Y
c1
H
F
ZONE "J"
DATUM
PLANE
A
A1
A2
7
E2
Y
Y
C
SEATING
PLANE
4 :( @
= ,
= , (
= 4 (
CASE 1337-03
ISSUE B
TO-272-2
PLASTIC
MRF9030MBR1
MOTOROLA RF DEVICE DATA
(4@
= ( 4 @ 2=
= ( ( ( 4 4 , (, (4
( ,4( :=0 =
= , , ( 2 4 , ( , 2(
(, , 4 ( 2 2( (,
2(( 2( (, (E 4 2( ,4 : ,
2(
2( , (=
= ( 4 4 FF , F(F (
4 = , ,( 4
4 = ( 4(= ( 4 4 FF , F(F ( 4, 2 , ,(
( ( ( , , , ( 2=
= ( 4 FBF (4
( ,,
4 = , ,( ,,
4 42, ( =
, (E(44
2( FBF ( 4 , ,E , (,
=
= , 4 , , ( ( ( ( ,
, , ( 2=
= ( 4 , , (4 2 ( FGF :=
= 442, 2 ( (4( 4 2( (E 4(
,(, 2( 2(, 4 =
DIM
A
A1
A2
D
D1
E
E1
E2
F
b1
c1
r1
aaa
For More Information On This Product,
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INCHES
MIN
MAX
=
=
=
=
=
=
=
=
=;4
=
=
=
=
=
=
=;4
=
=
=
=
=
=
=
MILLIMETERS
MIN
MAX
=
=
=
=
=
=
=
=
=;4
=
=
=
=
=
=
=;4
=
=
=
=
=
=
=
MRF9030MR1 MRF9030MBR1
11
Freescale Semiconductor, Inc...
Freescale Semiconductor, Inc.
Information in this document is provided solely to enable system and software implementers to use Motorola products. There are no express or implied copyright
licenses granted hereunder to design or fabricate any integrated circuits or integrated circuits based on the information in this document.
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the suitability of its products for any particular purpose, nor does Motorola assume any liability arising out of the application or use of any product or circuit, and
specifically disclaims any and all liability, including without limitation consequential or incidental damages. “Typical” parameters that may be provided in Motorola
data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including
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