Comset BD644 Silicon darlington power transistor Datasheet

SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
SILICON DARLINGTON POWER TRANSISTORS
PNP epitaxial-base transistors in a monolithic Dalrington circuit and housed in a TO-220
enveloppe. They are intended for output stages in audio equipment, general amplifiers, and
analogue switching application.
NPN complements are BD643, BD645, BD647, BD649 and BD651
Compliance to RoHS.
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-VCBO
Collector-Base Voltage
-VCEO
Collector-Emitter Voltage
-VEBO
Emitter-Base Voltage
-IC
Collector Current
-ICM
Collector Peak Current
18/10/2012
Value
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
COMSET SEMICONDUCTORS
45
60
80
100
120
45
60
80
100
120
Unit
V
V
5
V
8
A
12
A
1|5
SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ABSOLUTE MAXIMUM RATINGS
Symbol
Ratings
-IB
Base Current
PT
Power Dissipation
TJ
Junction Temperature
Ts
@ Tmb < 25°
Storage Temperature range
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Value
Unit
150
mA
62.5
Watts
150
°C
-65 to +150
Limiting values in accordance with the Absolute Maximum System (IEC 134)
THERMAL CHARACTERISTICS
Symbol
Ratings
Value
Unit
RthJ-MB
From junction to mounting base
2
K/W
RthJ-A
From junction to ambient in free air
70
K/W
18/10/2012
COMSET SEMICONDUCTORS
2|5
SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
Test Condition(s)
-IE=0,-VCB =-VCEOMAX
-ICBO
Collector Cutoff
Current
-IE=0,-VCB =1/2 VCBOMAX, TJ=150°C
-ICEO
Collector Cutoff
Current
-IE=0, -VCE =1/2 VCEOMAX
-IEBO
Emitter Cutoff Current
-VEB=5 V, -IC=0
-IC=4 A, -IB=16 mA
-IC=3 A, -IB=12 mA
-VCE(SAT)
Collector-Emitter
saturation Voltage (*)
-IC=5 A, -IB=50 mA
-VBE(SAT)
Base-Emitter
Saturation Voltage (*)
18/10/2012
-IC=12 A, -IB=50 mA
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
COMSET SEMICONDUCTORS
Min
Typ
Max
Unit
-
-
0.1
mA
-
-
1
mA
-
-
0.2
mA
-
-
5.0
mA
-
-
2
-
-
2
V
-
-
2.5
-
-
3
V
3|5
SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
ELECTRICAL CHARACTERISTICS
TC=25°C unless otherwise noted
Symbol
Ratings
-IC=4 A, -VCE=3 V
-VBE
Base-Emitter Voltage
(*)
-IC=3 A, -VCE=3 V
-VCE=3.0 V
-IC=0.5 A
-VCE=3.0 V, -IC=4 A
hFE
DC Current Gain (*)
-VCE=3.0 V, -IC=3 A
-VCE=3.0 V, -IC=8 A
hfe
ton
toff
Small Signal Current
Gain
turn-on time
turn-off time
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
BD644
BD646
BD648
BD650
BD652
Min
Typ
Max
-
-
2.5
-
-
2.5
-
2700
-
750
-
-
750
-
-
-
200
-
-VCE=3.0 V, -IC=4 A
f=1MHz
BD644
10
-
-
-VCE=3.0 V
-IC=3 A, f=1MHz
BD646
BD648
BD650
BD652
10
-
-
-IC=3 A
-IBon= IBoff=12 mA
All types
-
1
5
-
Unit
V
-
µs
(*) Pulse Width ≈ 300 µs, Duty Cycle ∠ 2.0%
18/10/2012
COMSET SEMICONDUCTORS
4|5
SEMICONDUCTORS
BD644 – 646 – 648 – 650 – 652
MECHANICAL DATA CASE TO-220
DIMENSIONS (mm)
Min.
A
B
C
D
E
F
G
H
L
M
N
P
R
S
T
U
Max.
9,90
15,65
13,20
6,45
4,30
2,70
2,60
15,75
1,15
3,50
10,30
15,90
13,40
6,65
4,50
3,15
3,00
17.15
1,40
3,70
1,37
0,55
2,70
5,08
2.54
0,90
0,46
2,50
4,98
2.49
0,70
Pin 1 :
Pin 2 :
Pin 3 :
Package
Base
Collector
Emitter
Collector
Revised September 2012
Information furnished is believed to be accurate and reliable. However, Comset Semiconductors assumes no responsibility for the consequences of
use of such information nor for any infringement of patents or other rights of third parties which may results from its use. Data are subject to change
without notice. Comset Semiconductors makes no warranty, representation or guarantee regarding the suitability of its products for any particular
purpose, nor does Comset Semiconductors assume any liability arising out of the application or use of any product and specifically disclaims any
and all liability, including without limitation consequential or incidental damages. Comset Semiconductors’ products are not authorized for use as
critical components in life support devices or systems.
www.comsetsemi.com
18/10/2012
[email protected]
COMSET SEMICONDUCTORS
5|5
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