PD - 95555A
SMPS MOSFET
Applications
l High Frequency Isolated DC-DC
Converters with Synchronous Rectification
for Telecom and Industrial Use
l High Frequency Buck Converters for
Computer Processor Power
l Lead-Free
Benefits
Ultra-Low Gate Impedance
l Very Low RDS(on) at 4.5V VGS
l Fully Characterized Avalanche Voltage
and Current
IRLR3715PbF
IRLU3715PbF
HEXFET® Power MOSFET
VDSS
RDS(on) max
ID
20V
14mΩ
54A
l
D-Pak
IRLR3715
I-Pak
IRLU3715
Absolute Maximum Ratings
Symbol
Parameter
VDS
VGS
ID @ TC = 25°C
ID @ TC = 100°C
IDM
PD @TC = 25°C
PD @TA = 25°C
Drain-Source Voltage
Gate-to-Source Voltage
Continuous Drain Current, VGS @ 10V
Continuous Drain Current, VGS @ 10V
Pulsed Drain Current
Maximum Power Dissipation
Maximum Power Dissipation
Linear Derating Factor
Junction and Storage Temperature Range
TJ , TSTG
Max.
Units
20
± 20
54
38
210
71
3.8
0.48
-55 to + 175
V
V
A
W
W
W/°C
°C
Thermal Resistance
Parameter
RθJC
RθJA
RθJA
Junction-to-Case
Junction-to-Ambient
Junction-to-Ambient (PCB mount)
Notes through
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Typ.
Max.
Units
–––
–––
–––
2.1
110
50
°C/W
are on page 10
1
12/6/04
IRLR/U3715PbF
Static @ TJ = 25°C (unless otherwise specified)
Parameter
Drain-to-Source Breakdown Voltage
∆V(BR)DSS/∆TJ Breakdown Voltage Temp. Coefficient
V(BR)DSS
RDS(on)
VGS(th)
IDSS
IGSS
Min.
20
–––
–––
Static Drain-to-Source On-Resistance
–––
Gate Threshold Voltage
1.0
–––
Drain-to-Source Leakage Current
–––
Gate-to-Source Forward Leakage
–––
Gate-to-Source Reverse Leakage
–––
Typ.
–––
0.022
11
15
–––
–––
–––
–––
–––
Max. Units
Conditions
–––
V
VGS = 0V, ID = 250µA
––– V/°C Reference to 25°C, ID = 1mA
14
VGS = 10V, ID = 26A
mΩ
20
VGS = 4.5V, ID = 21A
3.0
V
VDS = VGS, ID = 250µA
20
VDS = 16V, VGS = 0V
µA
100
VDS = 16V, VGS = 0V, TJ = 125°C
200
VGS = 16V
nA
-200
VGS = -16V
Dynamic @ TJ = 25°C (unless otherwise specified)
Symbol
gfs
Qg
Qgs
Qgd
Qoss
td(on)
tr
td(off)
tf
Ciss
Coss
Crss
Parameter
Forward Transconductance
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain ("Miller") Charge
Output Gate Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
Min.
26
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
–––
Typ.
–––
11
3.8
4.4
11
6.4
73
12
5.1
1060
700
120
Max. Units
Conditions
–––
S
VDS = 10V, ID = 21A
17
ID = 21A
–––
nC
VDS = 10V
–––
VGS = 4.5V
17
VGS = 0V, VDS = 10V
–––
VDD = 10V
–––
ID = 21A
ns
–––
RG = 1.8Ω
–––
VGS = 4.5V
–––
VGS = 0V
–––
VDS = 10V
–––
pF
ƒ = 1.0MHz
Avalanche Characteristics
Symbol
EAS
IAR
Parameter
Single Pulse Avalanche Energy
Avalanche Current
Typ.
Max.
Units
–––
–––
110
21
mJ
A
Diode Characteristics
Symbol
IS
ISM
VSD
trr
Qrr
trr
Qrr
2
Parameter
Continuous Source Current
(Body Diode)
Pulsed Source Current
(Body Diode)
Diode Forward Voltage
Reverse
Reverse
Reverse
Reverse
Recovery
Recovery
Recovery
Recovery
Time
Charge
Time
Charge
Min. Typ. Max. Units
–––
–––
54
–––
–––
210
–––
–––
–––
–––
–––
–––
0.9
0.8
37
28
38
30
1.3
–––
56
42
57
45
A
V
ns
nC
ns
nC
Conditions
D
MOSFET symbol
showing the
G
integral reverse
S
p-n junction diode.
TJ = 25°C, IS = 21A, VGS = 0V
TJ = 125°C, IS = 21A, VGS = 0V
TJ = 25°C, IF = 21A, VR=20V
di/dt = 100A/µs
TJ = 125°C, IF = 21A, VR=20V
di/dt = 100A/µs
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IRLR/U3715PbF
1000
1000
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
100
100
10
2.5V
1
20µs PULSE WIDTH
TJ = 25 °C
0.1
0.1
1
10
R DS(on) , Drain-to-Source On Resistance
(Normalized)
I D , Drain-to-Source Current (A)
TJ = 25 ° C
TJ = 175 ° C
V DS = 15V
20µs PULSE WIDTH
4.0
5.0
6.0
7.0
Fig 3. Typical Transfer Characteristics
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10
100
Fig 2. Typical Output Characteristics
2.5
VGS , Gate-to-Source Voltage (V)
1
VDS , Drain-to-Source Voltage (V)
1000
3.0
20µs PULSE WIDTH
TJ = 175 °C
1
0.1
100
Fig 1. Typical Output Characteristics
100
2.5V
10
VDS , Drain-to-Source Voltage (V)
10
2.0
VGS
15V
10V
4.5V
3.5V
3.3V
3.0V
2.7V
BOTTOM 2.5V
TOP
I D , Drain-to-Source Current (A)
I D , Drain-to-Source Current (A)
TOP
8.0
ID = 52A
2.0
1.5
1.0
0.5
0.0
-60 -40 -20 0
VGS = 10V
20 40 60 80 100 120 140 160 180
TJ , Junction Temperature ( °C)
Fig 4. Normalized On-Resistance
Vs. Temperature
3
IRLR/U3715PbF
VGS = 0V,
f = 1 MHZ
Ciss = Cgs + Cgd, Cds SHORTED
Crss = Cgd
C, Capacitance(pF)
Coss = Cds + Cgd
Ciss
1000
Coss
Crss
100
14
VGS , Gate-to-Source Voltage (V)
10000
ID = 21A
VDS = 16V
VDS = 10V
12
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 13
10
1
10
100
0
VDS, Drain-to-Source Voltage (V)
ID, Drain-to-Source Current (A)
1000
100
TJ = 175 ° C
TJ = 25 ° C
1
V GS = 0 V
0.4
15
20
25
OPERATION IN THIS AREA
LIMITED BY R DS(on)
100
10
0.1
0.0
10
Fig 6. Typical Gate Charge Vs.
Gate-to-Source Voltage
1000
ISD , Reverse Drain Current (A)
5
QG , Total Gate Charge (nC)
Fig 5. Typical Capacitance Vs.
Drain-to-Source Voltage
0.8
1.2
1.6
2.0
VSD ,Source-to-Drain Voltage (V)
Fig 7. Typical Source-Drain Diode
Forward Voltage
4
0
2.4
100µsec
10
1msec
10msec
Tc = 25°C
Tj = 175°C
Single Pulse
1
1
10
100
VDS , Drain-toSource Voltage (V)
Fig 8. Maximum Safe Operating Area
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IRLR/U3715PbF
60
V DS
LIMITED BY PACKAGE
VGS
ID , Drain Current (A)
50
RD
D.U.T.
RG
+
-VDD
40
4.5V
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
30
Fig 10a. Switching Time Test Circuit
20
VDS
10
0
90%
25
50
75
100
125
150
175
TC , Case Temperature ( °C)
10%
VGS
Fig 9. Maximum Drain Current Vs.
Case Temperature
td(on)
tr
t d(off)
tf
Fig 10b. Switching Time Waveforms
Thermal Response (Z thJC )
10
1
D = 0.50
0.20
0.10
0.05
0.02
0.01
0.1
PDM
SINGLE PULSE
(THERMAL RESPONSE)
t1
t2
0.01
0.00001
Notes:
1. Duty factor D = t 1 / t 2
2. Peak T J = P DM x Z thJC + TC
0.0001
0.001
0.01
0.1
t1 , Rectangular Pulse Duration (sec)
Fig 11. Maximum Effective Transient Thermal Impedance, Junction-to-Case
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5
15V
D.U.T
RG
VGS
20V
DRIVER
L
VDS
+
V
- DD
IAS
tp
A
0.01Ω
Fig 12a. Unclamped Inductive Test Circuit
V(BR)DSS
tp
EAS , Single Pulse Avalanche Energy (mJ)
IRLR/U3715PbF
240
TOP
200
BOTTOM
ID
8.5A
15A
21A
160
120
80
40
0
25
50
75
100
125
150
175
Starting TJ , Junction Temperature ( °C)
Fig 12c. Maximum Avalanche Energy
Vs. Drain Current
I AS
Fig 12b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5 V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
Charge
Fig 13a. Basic Gate Charge Waveform
6
IG
ID
Current Sampling Resistors
Fig 13b. Gate Charge Test Circuit
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IRLR/U3715PbF
Peak Diode Recovery dv/dt Test Circuit
+
D.U.T
Circuit Layout Considerations
• Low Stray Inductance
• Ground Plane
• Low Leakage Inductance
Current Transformer
+
-
-
+
RG
•
•
•
•
Driver Gate Drive
P.W.
+
dv/dt controlled by RG
Driver same type as D.U.T.
ISD controlled by Duty Factor "D"
D.U.T. - Device Under Test
Period
D=
-
VDD
P.W.
Period
VGS=10V
*
D.U.T. ISD Waveform
Reverse
Recovery
Current
Body Diode Forward
Current
di/dt
D.U.T. VDS Waveform
Diode Recovery
dv/dt
Re-Applied
Voltage
Body Diode
VDD
Forward Drop
Inductor Curent
Ripple ≤ 5%
ISD
* VGS = 5V for Logic Level Devices
Fig 14. For N-Channel HEXFET® Power MOSFETs
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7
IRLR/U3715PbF
D-Pak (TO-252AA) Package Outline
Dimensions are shown in millimeters (inches)
D-Pak (TO-252AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFR120
WIT H ASS EMBLY
LOT CODE 1234
ASS EMBLED ON WW 16, 1999
IN T HE AS S EMBLY LINE "A"
PART NUMBER
INT ERNAT IONAL
RECT IFIER
LOGO
Note: "P" in as sembly line pos ition
indicates "Lead-Free"
IRFU120
12
916A
34
AS S EMBLY
LOT CODE
DAT E CODE
YEAR 9 = 1999
WEEK 16
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
12
AS S EMBLY
LOT CODE
8
34
DAT E CODE
P = DES IGNATES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 16
A = AS S EMBLY S IT E CODE
www.irf.com
IRLR/U3715PbF
I-Pak (TO-251AA) Package Outline
Dimensions are shown in millimeters (inches)
I-Pak (TO-251AA) Part Marking Information
EXAMPLE: T HIS IS AN IRFU120
WIT H AS S EMBLY
LOT CODE 5678
AS S EMBLED ON WW 19, 1999
IN T HE AS S EMBLY LINE "A"
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRF U120
919A
56
78
AS S EMBLY
LOT CODE
Note: "P" in assembly line
position indicates "Lead-Free"
DAT E CODE
YEAR 9 = 1999
WEEK 19
LINE A
OR
INT ERNAT IONAL
RECT IFIER
LOGO
PART NUMBER
IRFU120
56
AS S EMBLY
LOT CODE
www.irf.com
78
DAT E CODE
P = DES IGNAT ES LEAD-FREE
PRODUCT (OPT IONAL)
YEAR 9 = 1999
WEEK 19
A = AS S EMBLY S IT E CODE
9
IRLR/U3715PbF
D-Pak (TO-252AA) Tape & Reel Information
Dimensions are shown in millimeters (inches)
TR
TRR
16.3 ( .641 )
15.7 ( .619 )
12.1 ( .476 )
11.9 ( .469 )
FEED DIRECTION
TRL
16.3 ( .641 )
15.7 ( .619 )
8.1 ( .318 )
7.9 ( .312 )
FEED DIRECTION
NOTES :
1. CONTROLLING DIMENSION : MILLIMETER.
2. ALL DIMENSIONS ARE SHOWN IN MILLIMETERS ( INCHES ).
3. OUTLINE CONFORMS TO EIA-481 & EIA-541.
13 INCH
16 mm
NOTES :
1. OUTLINE CONFORMS TO EIA-481.
Notes:
Repetitive rating; pulse width limited by
max. junction temperature.
Starting TJ = 25°C, L = 0.51mH
When mounted on 1" square PCB (FR-4 or G-10 Material) .
For recommended footprint and soldering techniques refer
to application note #AN-994
RG = 25Ω, IAS = 21A,VGS=10V
Pulse width ≤ 400µs; duty cycle ≤ 2%.
Calculated continuous current based on maximum
allowable junction temperature. Package limitation
current is 30A.
Data and specifications subject to change without notice.
This product has been designed and qualified for the Industrial market.
Qualification Standards can be found on IR’s Web site.
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.02/04
10
www.irf.com
Note: For the most current drawings please refer to the IR website at:
http://www.irf.com/package/