ON NTMFS5H600NLT3G Power mosfet Datasheet

NTMFS5H600NL
Power MOSFET
60 V, 1.3 mW, 250 A, Single N−Channel
Features
•
•
•
•
Small Footprint (5x6 mm) for Compact Design
Low RDS(on) to Minimize Conduction Losses
Low QG and Capacitance to Minimize Driver Losses
These Devices are Pb−Free and are RoHS Compliant
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V(BR)DSS
MAXIMUM RATINGS (TJ = 25°C unless otherwise noted)
Symbol
Value
Unit
Drain−to−Source Voltage
VDSS
60
V
Gate−to−Source Voltage
VGS
±20
V
ID
250
A
Parameter
Continuous Drain
Current RqJC
(Notes 1, 3)
TC = 25°C
Power Dissipation
RqJC (Note 1)
Continuous Drain
Current RqJA
(Notes 1, 2, 3)
Steady
State
TC = 100°C
TC = 25°C
Power Dissipation
RqJA (Notes 1 & 2)
Pulsed Drain Current
Steady
State
PD
ID
TA = 25°C, tp = 10 ms
Source Current (Body Diode)
G (4)
PD
S (1,2,3)
W
3.3
IDM
900
A
TJ, Tstg
−55 to
+ 150
°C
IS
170
A
mJ
Lead Temperature for Soldering Purposes
(1/8″ from case for 10 s)
TL
260
°C
Stresses exceeding those listed in the Maximum Ratings table may damage the
device. If any of these limits are exceeded, device functionality should not be
assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS
Symbol
Value
Unit
Junction−to−Case − Steady State
RqJC
0.80
°C/W
Junction−to−Ambient − Steady State (Note 2)
RqJA
38
1. The entire application environment impacts the thermal resistance values shown,
they are not constants and are only valid for the particular conditions noted.
2. Surface−mounted on FR4 board using a 650 mm2, 2 oz. Cu pad.
3. Maximum current for pulses as long as 1 second is higher but is dependent
on pulse duration and duty cycle.
1
MARKING
DIAGRAM
D
338
September, 2016 − Rev. 0
N−CHANNEL MOSFET
1.3
EAS
© Semiconductor Components Industries, LLC, 2016
D (5)
A
35
Single Pulse Drain−to−Source Avalanche
Energy (IL(pk) = 26 A)
Parameter
250 A
1.7 mW @ 4.5 V
22
TA = 100°C
Operating Junction and Storage Temperature
1.3 mW @ 10 V
60 V
W
160
63
TA = 100°C
TA = 25°C
ID MAX
160
TC = 100°C
TA = 25°C
RDS(ON) MAX
1
DFN5
(SO−8FL)
CASE 488AA
STYLE 1
5H600L
A
Y
W
ZZ
S
S
S
G
D
5H600L
AYWZZ
D
D
= Specific Device Code
= Assembly Location
= Year
= Work Week
= Lot Traceability
ORDERING INFORMATION
See detailed ordering, marking and shipping information in the
package dimensions section on page 5 of this data sheet.
Publication Order Number:
NTMFS5H600NL/D
NTMFS5H600NL
ELECTRICAL CHARACTERISTICS (TJ = 25°C unless otherwise specified)
Parameter
Symbol
Test Condition
Min
Drain−to−Source Breakdown Voltage
V(BR)DSS
VGS = 0 V, ID = 250 mA
60
Drain−to−Source Breakdown Voltage
Temperature Coefficient
V(BR)DSS/
TJ
Typ
Max
Unit
OFF CHARACTERISTICS
Zero Gate Voltage Drain Current
IDSS
Gate−to−Source Leakage Current
V
34.3
VGS = 0 V,
VDS = 60 V
mV/°C
TJ = 25 °C
10
TJ = 125°C
250
IGSS
VDS = 0 V, VGS = 20 V
VGS(TH)
VGS = VDS, ID = 250 mA
100
mA
nA
ON CHARACTERISTICS (Note 4)
Gate Threshold Voltage
Threshold Temperature Coefficient
VGS(TH)/TJ
Drain−to−Source On Resistance
Forward Transconductance
RDS(on)
1.2
2.0
−5.0
VGS = 10 V
ID = 50 A
1.1
1.3
VGS = 4.5 V
ID = 50 A
1.4
1.7
gFS
VDS =15 V, ID = 50 A
V
mV/°C
280
mW
S
CHARGES, CAPACITANCES & GATE RESISTANCE
Input Capacitance
CISS
Output Capacitance
COSS
6680
Reverse Transfer Capacitance
CRSS
Output Charge
QOSS
VGS = 0 V, VDD = 30 V
100
Total Gate Charge
QG(TOT)
VGS = 4.5 V, VDS = 30 V; ID = 50 A
40
Total Gate Charge
QG(TOT)
VGS = 10 V, VDS = 30 V; ID = 50 A
89
Threshold Gate Charge
QG(TH)
VGS = 0 V, f = 1 MHz, VDS = 30 V
1230
pF
30
nC
11
Gate−to−Source Charge
QGS
Gate−to−Drain Charge
QGD
20
Plateau Voltage
VGP
3.0
td(ON)
28
VGS = 4.5 V, VDS = 30 V; ID = 50 A
6.5
V
SWITCHING CHARACTERISTICS (Note 5)
Turn−On Delay Time
Rise Time
Turn−Off Delay Time
Fall Time
tr
td(OFF)
VGS = 4.5 V, VDS = 30 V,
ID = 50 A, RG = 2.5 W
tf
130
ns
88
160
DRAIN−SOURCE DIODE CHARACTERISTICS
Forward Diode Voltage
Reverse Recovery Time
VSD
TJ = 25°C
0.77
TJ = 125°C
0.63
tRR
Charge Time
ta
Discharge Time
tb
Reverse Recovery Charge
VGS = 0 V,
IS = 50 A
1.2
V
72
VGS = 0 V, dIS/dt = 100 A/ms,
IS = 50 A
QRR
36
ns
36
60
nC
Product parametric performance is indicated in the Electrical Characteristics for the listed test conditions, unless otherwise noted. Product
performance may not be indicated by the Electrical Characteristics if operated under different conditions.
4. Pulse Test: pulse width v 300 ms, duty cycle v 2%.
5. Switching characteristics are independent of operating junction temperatures.
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2
NTMFS5H600NL
TYPICAL CHARACTERISTICS
250
500
10 V to 3.4 V
3.2 V
200
175
3.0 V
150
125
2.8 V
100
75
VGS = 2.6 V
50
400
350
300
250
TJ = 25°C
200
150
100
25
0
TJ = 125°C
50
0
0
0.5
1.5
2.0
2.5
3.0
3.5
Figure 1. On−Region Characteristics
Figure 2. Transfer Characteristics
TJ = 25°C
ID = 50 A
10
8
6
4
2
0
4
5
6
7
8
9
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
TJ = 25°C
1.5
1.4
VGS = 4.5 V
1.3
1.2
VGS = 10 V
1.1
1.0
0.9
0.8
10
30
50
70
90
110
130
ID, DRAIN CURRENT (A)
100
VGS = 10 V
ID = 50 A
IDSS, LEAKAGE (nA)
TJ = 150°C
1.6
1.4
1.2
1.0
10
TJ = 125°C
TJ = 85°C
1
0.8
0.1
0
25
50
75
100
125
150
Figure 4. On−Resistance vs. Drain Current and
Gate Voltage
2.0
0.6
−50 −25
4.0
1.6
Figure 3. On−Resistance vs. Gate−to−Source
Voltage
RDS(on), NORMALIZED DRAIN−TO−
SOURCE RESISTANCE
1.0
VGS, GATE−TO−SOURCE VOLTAGE (V)
12
1.8
0.5
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
14
3
TJ = −55°C
0
1.0
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
RDS(on), DRAIN−TO−SOURCE RESISTANCE (mW)
VDS = 10 V
450
ID, DRAIN CURRENT (A)
ID, DRAIN CURRENT (A)
225
150
5
15
25
35
45
55
TJ, JUNCTION TEMPERATURE (°C)
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
Figure 5. On−Resistance Variation with
Temperature
Figure 6. Drain−to−Source Leakage Current
vs. Voltage
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3
NTMFS5H600NL
TYPICAL CHARACTERISTICS
C, CAPACITANCE (pF)
CISS
COSS
1E+3
VGS = 0 V
TJ = 25°C
f = 1 MHz
CRSS
1E+2
1E+1
0
10
20
30
40
50
QT
9
8
7
6
5
QGS
4
QGD
3
VDS = 30 V
TJ = 25°C
ID = 50 A
2
1
0
60
0
20
10
30
50
40
60
80
70
VDS, DRAIN−TO−SOURCE VOLTAGE (V)
QG, TOTAL GATE CHARGE (nC)
Figure 7. Capacitance Variation
Figure 8. Gate−to−Source Voltage vs. Total
Charge
1000
IS, SOURCE CURRENT (A)
tr
100
td(on)
VGS = 4.5 V
VDS = 30 V
ID = 50 A
10
1
90
100
td(off)
tf
t, TIME (ns)
10
VGS, GATE−TO−SOURCE VOLTAGE (V)
1E+4
10
10
1
TJ = 125°C
0.1
100
0.3
0.4
TJ = −55°C
TJ = 25°C
0.5
0.6
0.7
0.8
0.9
RG, GATE RESISTANCE (W)
VSD, SOURCE−TO−DRAIN VOLTAGE (V)
Figure 9. Resistive Switching Time Variation
vs. Gate Resistance
Figure 10. Diode Forward Voltage vs. Current
100
1000
IPEAK DRAIN CURRENT (A)
500 ms
1 ms
10 ms
ID (A)
100
10
RDS(on) Limit
Thermal Limit
Package Limit
1
0.1
1
10
TJ(initial) = 25°C
TJ(initial) = 100°C
10
1
100E−6
100
1E−3
VDS (V)
TIME IN AVALANCHE (s)
Figure 11. Safe Operating Area
Figure 12. IPEAK vs. Time in Avalanche
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4
10E−3
NTMFS5H600NL
100
RqJA(t) (°C/W)
50% Duty Cycle
10
20%
10%
5%
1
2%
1%
NTMFS5H600NL 650 mm2, 2 oz., Cu Single Layer Pad
0.1
Single Pulse
0.01
0.000001
0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
PULSE TIME (sec)
Figure 13. Thermal Characteristics
DEVICE ORDERING INFORMATION
Device
Marking
Package
Shipping†
NTMFS5H600NLT1G
5H600L
DFN5
(Pb−Free)
1500 / Tape & Reel
NTMFS5H600NLT3G
5H600L
DFN5
(Pb−Free)
5000 / Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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5
NTMFS5H600NL
PACKAGE DIMENSIONS
DFN5 5x6, 1.27P
(SO−8FL)
CASE 488AA
ISSUE M
2X
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ASME Y14.5M, 1994.
2. CONTROLLING DIMENSION: MILLIMETER.
3. DIMENSION D1 AND E1 DO NOT INCLUDE
MOLD FLASH PROTRUSIONS OR GATE
BURRS.
0.20 C
D
A
2
B
D1
2X
0.20 C
4X
E1
2
q
E
c
1
2
3
DIM
A
A1
b
c
D
D1
D2
E
E1
E2
e
G
K
L
L1
M
q
A1
4
TOP VIEW
C
SEATING
PLANE
DETAIL A
0.10 C
A
RECOMMENDED
SOLDERING FOOTPRINT*
0.10 C
MILLIMETERS
MIN
NOM
MAX
0.90
1.00
1.10
0.00
−−−
0.05
0.33
0.41
0.51
0.23
0.28
0.33
5.00
5.15
5.30
4.70
4.90
5.10
3.80
4.00
4.20
6.00
6.30
6.15
5.70
5.90
6.10
3.45
3.65
3.85
1.27 BSC
0.51
0.575
0.71
1.20
1.35
1.50
0.51
0.575
0.71
0.125 REF
3.00
3.40
3.80
0_
−−−
12 _
STYLE 1:
PIN 1. SOURCE
2. SOURCE
3. SOURCE
4. GATE
5. DRAIN
2X
SIDE VIEW
0.495
DETAIL A
4.560
2X
0.10
b
C A B
0.05
c
1.530
8X
e/2
e
L
1
3.200
4
4.530
K
1.330
2X
E2
PIN 5
(EXPOSED PAD)
L1
M
0.905
1
0.965
4X
G
D2
BOTTOM VIEW
1.000
4X 0.750
1.270
PITCH
DIMENSIONS: MILLIMETERS
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
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NTMFS5H600NL/D