UTC MMBTA92 High voltage pnp transistor Datasheet

UNISONIC TECHNOLOGIES CO., LTD
MMBTA92
PNP SILICON TRANSISTOR
HIGH VOLTAGE PNP
TRANSISTOR
3
DESCRIPTION
The UTC MMBTA92 are high voltage PNP transistors, designed
for telephone signal switching and for high voltage amplifier.
1
2
FEATURES
SOT-23
* High Collector-Emitter voltage: VCEO=-300V
* Collector Dissipation: PC(MAX)=350mW
*Pb-free plating product number: MMBTA92L
ORDERING INFORMATION
Order Number
Normal
Lead Free Plating
MMBTA92-AE3-R
MMBTA92L-AE3-R
Package
SOT-23
Pin Assignment
1
2
3
E
B
C
Packing
Tape Reel
MMBTA92L-AE3-R
(1)Packing Type
(1) R: Tape Reel
(2)Package Type
(2) AE3: SOT-23
(3)Lead Plating
(3) L: Lead Free Plating, Blank: Pb/Sn
MARKING
2D
www.unisonic.com.tw
Copyright © 2005 Unisonic Technologies Co., Ltd
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QW-R206-005,B
MMBTA92
PNP SILICON TRANSISTOR
ABSOLUTE MAXIMUM RATINGS (Operating temperature range applies unless otherwise specified)
PARAMETER
Collector-Base Voltage
Collector-Emitter Voltage
Emitter-Base Voltage
Collector Current
Collector Dissipation
SYMBOL
VCBO
VCEO
VEBO
IC
Ta=25℃
Tc=25℃
Derate Above 25℃
PC
RATINGS
-300
-300
-5
-500
350
1.5
12
UNIT
V
V
V
mA
mW
W
mW/℃
Junction Temperature
TJ
+150
℃
Storage Temperature
TSTG
-40 ~ +150
℃
Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged.
Absolute maximum ratings are stress ratings only and functional device operation is not implied.
ELECTRICAL CHARACTERISTICS (TJ=25℃, unless otherwise specified)
PARAMETER
SYMBOL
TEST CONDITIONS
Collector-Base Breakdown Voltage
BVCBO IC=-100µA, IE=0
Collector-Emitter Breakdown Voltage BVCEO IC=-1mA, IB=0
Emitter-Base Breakdown Voltage
BVEBO IE=-100µA, IC=0
Collector Cut-Off Current
ICBO
VCB=-200V, IE=0
Emitter Cut-Off Current
IEBO
VEB=-3V, IC=0
VCE=-10V, IC=-1mA
VCE=-10V, IC=-10mA
DC Current Gain (Note)
hFE
VCE=-10V, IC=-30mA
Collector-Emitter Saturation Voltage VCE(SAT)1 IC=-20mA, IB=-2mA
Base-Emitter Saturation Voltage
VBE(SAT)1 IC=-20mA, IB=-2mA
VCE=-20V, IC=-10mA,
Current Gain Bandwidth Product
fT
f=100MHz
Collector Base Capacitance
Ccb
VCB=-20V, IE=0, f=1MHz
Note: Pulse test: PW<300µs, Duty Cycle<2%, VCE(sat)1<200mV (Class SIN)
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
MIN
-300
-300
-5
TYP
MAX
-0.25
-0.10
UNIT
V
V
V
µA
µA
60
80
80
-0.5
-0.90
V
V
MHz
6
pF
50
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QW-R206-005,B
MMBTA92
PNP SILICON TRANSISTOR
TYPICAL CHARACTERISTICS
DC Current Gain
103
Saturation Voltage
-104
IC=10*IB
VCE(SAT), VBE(SAT) (mV)
DC Current Gain, hFE
VCE=-10V
102
101
100
-100
1
-10
-10
2
-10
3
-10
4
-103
VBE(SAT)
-102
-101
-100
Collector Current, IC (mA)
-101
-10 2
-103
-10 4
Collector Current, I C (mA)
Active-Region Safe Operating Area
Capacitance
-10 3
CIB
101
CCB
-10-1
-100
-101
-102
Collector-Base Voltage(V)
-10 2
-10 1
s
0 .1m
3
9
A
92
ms PS
SA
1.0 M
P
M
al
m ℃
er 25
DC
Th T C=
5W o n
1. ati
it
lim
Collector Current, IC (mA)
102
C IB(pF), CCB(pF)
VCE(SAT)
625mW Thermal
limitation Ta=25℃
bonding breakdown
-10 0 limitation T J=150℃
-100
-10 1
-102
-103
Collector-Emitter Voltage (V)
Current Gain Bandwidth Product
3
Current Gain Bandwidth
Product (MHz)
10
VCE=-20V
f=100MHz
102
101
-100
-101
Collector Current, IC (mA)
-102
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-005,B
MMBTA92
PNP SILICON TRANSISTOR
UTC assumes no responsibility for equipment failures that result from using products at values that
exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or
other parameters) listed in products specifications of any and all UTC products described or contained
herein. UTC products are not designed for use in life support appliances, devices or systems where
malfunction of these products can be reasonably expected to result in personal injury. Reproduction in
whole or in part is prohibited without the prior written consent of the copyright owner. The information
presented in this document does not form part of any quotation or contract, is believed to be accurate
and reliable and may be changed without notice.
UNISONIC TECHNOLOGIES CO., LTD
www.unisonic.com.tw
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QW-R206-005,B
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