WINNERJOIN BC369 Transistor (pnp) Datasheet

RoHS
BC369
BC369
TRANSISTOR (PNP)
D
T
,. L
TO-92
FEATURE
Power dissipation
PCM:
1. EMITTER
0.625
W (Tamb=25℃)
2. COLLECTOR
Collector current
ICM:
-1
A
Collector-base voltage
V(BR)CBO:
-25
V
Operating and storage junction temperature range
3. BASE
IC
TJ, Tstg: -55℃ to +150℃
ELECTRICAL CHARACTERISTICS (Tamb=25℃
R
T
Parameter
Symbol
Collector-base breakdown voltage
V(BR)CBO
C
E
L
O
N
C
O
1 2 3
unless otherwise specified)
Test
conditions
MIN
MAX
UNIT
Ic= -100µA, IE=0
-25
V
Collector-emitter breakdown voltage
V(BR)CEO
IC= -10 mA , IB=0
-20
V
Emitter-base breakdown voltage
V(BR)EBO
IE= -100µA, IC=0
-5
V
ICBO
VCB= -25V, IE=0
-10
µA
IEBO
VEB= -5V, IC=0
-10
µA
hFE
VCE=-1V, IC= -0.5mA
VCE(sat)
IC= -1A, IB= -100mA
-0.5
V
VBE(on)
IC= -1A , VCE= -1V
-1
V
Collector cut-off current
Emitter cut-off current
DC current gain
J
E
E
Collector-emitter voltage
Base-emitter voltage
W
Transition frequency
WEJ ELECTRONIC CO.
fT
VCE= -5V, IC= -10mA
f =20MHz
Http:// www.wej.cn
85
375
65
E-mail:[email protected]
MHz
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