ND2012L/2020L N-Channel Depletion-Mode MOSFET Transistors Product Summary Part Number V(BR)DSV Min (V) ND2012L rDS(on) Max () VGS(off) (V) ID (A) 12 –1.5 to –4 0.16 20 –0.5 to –2.5 0.132 200 ND2020L Features Benefits Applications High Breakdown Voltage: 220 V Normally “On” Low rDS Switch: 9 Low Input and Output Leakage Low-Power Drive Requirement Low Input Capacitance Full-Voltage Operation Low Offset Voltage Low Error Voltage Easily Driven Without Buffer High-Speed Switching Normally “On” Switching Circuits Current Sources/Limiters Power Supply, Converter Circuits Solid-State Relays Telecom Switches TO-226AA (TO-92) S 1 G 2 D 3 Top View Absolute Maximum Ratings (TA = 25C Unless Otherwise Noted) Parameter Symbol ND2012L ND2020L Drain-Source Voltage VDS 200 200 Gate-Source Voltage VGS 30 30 0.16 0.132 0.1 0.083 0.8 0.8 0.8 0.8 0.32 0.32 156 156 Continuous Drain Current (TJ = 150C) Pulsed Drain TA= 25C TA= 100C Currenta Power Dissipation ID IDM TA= 25C TA= 100C Maximum Junction-to-Ambient Operating Junction and Storage Temperature Range PD RthJA TJ, Tstg –55 to 150 Unit V A W C/W C Notes a. Pulse width limited by maximum junction temperature. Updates to this data sheet may be obtained via facsimile by calling Siliconix FaxBack, 1-408-970-5600. Please request FaxBack document #70197. Applications information may also be obtained via FaxBack, request document #70612. Siliconix S-52426—Rev. C, 14-Apr-97 1 ND2012L/2020L Specificationsa Limits ND2012L Parameter Symbol Test Conditions Typb Min Max ND2020L Min Max Unit Static Drain Source Breakdown Voltage Drain-Source Gate-Source Cutoff Voltage Gate-Body Leakage V(BR)DSV VGS(off) IGSS VGS = –8 V, ID = 10 mA 220 VGS = –5 V, ID = 10 mA 220 VDS = 5 V, ID = 10 mA 200 –1.5 VDS = 0 V, VGS = "20 V = VDS = 160 V, VGS = –8 V Drain Cutoff Current ID(off) –4 –0.5 Drain-Source On-Resistancec IDSS rDS(on) "10 "50 "50 Common Source Output Conductancec gfs 200 VDS = 160 V, VGS = –5 V 1 gos mA 200 VDS = 10 V, VGS = 0 V 300 VGS = 2 V, ID = 20 mA 7 VGS = 0 V, ID = 20 mA 8 12 20 12.6 30 50 VDS = 77.5 5 V V, ID = 20 mA nA 1 = = Forward Transconductance c –2.5 "10 = Drain-Saturation Currentc V 200 30 30 mA W 55 mS 75 mS Dynamic Input Capacitance Ciss 35 100 100 Output Capacitance Coss 10 20 20 Reverse Transfer Capacitance Crss 2 5 5 VDS = 25 V, VGS = –5 V, f = 1 MHz pF Switchingd Turn-On Time Turn-Off Time td(on) tr td(off) 20 25 W ^ 20 W tf Notes a. TA = 25C unless otherwise noted. b. For DESIGN AID ONLY, not subject to production testing. c. Pulse test: PW v300 ms duty cycle v2%. d. Switching time is essentially independent of operating temperature. 2 20 ns 10 10 VDDQ20 Siliconix S-52426—Rev. C, 14-Apr-97 ND2012L/2020L Typical Characteristics (25C Unless Otherwise Noted) Output Characteristics (ND2012) 100 Output Characteristics (ND2020) 100 –0.5 V 0V VGS = 5 V 60 –1.5 V 40 –2 V 20 –0.2 V 0.2 V 80 I D – Drain Current (mA) I D – Drain Current (A) 80 0V VGS = 2 V –1 V –0.4 V 60 –0.6 V 40 –0.8 V –1.4 V 20 –1 V –1.2 V –2.5 V 0 0 0 0.4 0.8 1.2 1.6 2 0 VDS – Drain-to-Source Voltage (V) 1.6 2 Transfer Characteristics (ND2020) VDS = 10 V 160 25C I D – Drain Current (mA) I D – Drain Current (mA) 400 1.2 200 TC = –55C VDS = 10 V 0.8 VDS – Drain-to-Source Voltage (V) Transfer Characteristics (ND2012) 500 0.4 125C 300 200 100 120 80 TC = 125C 25C 40 –55C 0 –4.5 –3.5 –2.5 –1.5 –0.5 0 –4.5 0.5 VGS – Gate-Source Voltage (V) rDS(on) 600 IDSS 10 400 5 200 0 0 –1 –2 –3 –4 VGS(off) – Gate-Source Cutoff Voltage (V) Siliconix S-52426—Rev. C, 14-Apr-97 –0.5 0.5 On-Resistance vs. DrainCurrent 25 –5 rDS(on) – On-Resistance ( ) 800 15 0 –1.5 VGS = 0 V I DSS – Drain Current (mA) rDS(on) – On-Resistance ( ) 1000 rDS @ ID = 20 mA, VGS = 0 V IDSS @ VDS = 7.5 V, VGS = 0 V 20 –2.5 VGS – Gate-Source Voltage (V) On-Resistance and Drain Current vs. Gate-Source Cutoff Voltage 25 –3.5 20 15 ND2020 10 ND2012 5 0 10 100 1K ID – Drain Current (mA) 3 ND2012L/2020L Typical Characteristics (25C Unless Otherwise Noted) (Cont’d) Forward Transconductance and Output Conductance vs. Drain Current Normalized On-Resistance vs. Junction Temperature g fs – Forward Transconductance (mS) rDS(on) – Drain-Source On-Resistance (Normalized) 1.75 1.50 1.25 1.00 0.75 VDS = 7.5 V Pulse Test 80 ms, 1% Duty Cycle 300 250 500 200 400 150 300 100 200 gfs 50 100 gos 0 0.50 –50 –10 30 70 110 1 150 10 TJ – Junction Temperature (C) Capacitance Load Condition Effects on Switching 100 t – Switching Time (ns) 80 60 C iss 40 VDD = 25 V VGS = 0 to –5 V RG = 25 W td(on) VGS = –5 V f = 1 MHz 100 0 1K 100 ID – Drain Current (A) 120 C – Capacitance (pF) 600 g os – Output Conductance (m S) VGS = 0 V ID = 20 mA 2.00 700 350 2.25 tf 10 td(off) tr C oss 20 C rss 0 1 0 10 20 30 40 50 1 10 100 ID – Drain Current (A) VDS – Drain-to-Source Voltage (V) Normalized Effective Transient Thermal Impedance, Junction-to-Ambient (TO-226AA) 1 Normalized Effective Transient Thermal Impedance Duty Cycle = 0.5 0.2 0.1 0.1 Notes: 0.05 PDM 0.02 t1 t2 1. Duty Cycle, D = 0.01 t1 t2 2. Per Unit Base = RthJA = 156C/W 3. TJM – TA = PDMZthJA(t) Single Pulse 0.01 0.1 1 10 100 1K 10 K t1 – Square Wave Pulse Duration (sec) 4 Siliconix S-52426—Rev. C, 14-Apr-97