APTGF200SK120D3G Buck Chopper NPT IGBT Power Module Q1 3 4 5 1 2 VCES = 1200V IC = 200A @ Tc = 80°C Application • AC and DC motor control • Switched Mode Power Supplies Features • Non Punch Through (NPT) FAST IGBT - Low voltage drop - Low tail current - Switching frequency up to 50 kHz - Soft recovery parallel diodes - Low diode VF - Low leakage current - RBSOA and SCSOA rated • Kelvin emitter for easy drive • High level of integration • M6 power connectors Benefits • Stable temperature behavior • Very rugged • Direct mounting to heatsink (isolated package) • Low junction to case thermal resistance • Easy paralleling due to positive TC of VCEsat • RoHS Compliant Absolute maximum ratings Continuous Collector Current ICM VGE PD Pulsed Collector Current Gate – Emitter Voltage Maximum Power Dissipation TC = 25°C Reverse Bias Safe Operating Area Tj = 125°C 400A@1150V TC = 25°C TC = 80°C TC = 25°C Unit V September, 2008 IC Max ratings 1200 300 200 400 ±20 1400 RBSOA Parameter Collector - Emitter Breakdown Voltage A V W These Devices are sensitive to Electrostatic Discharge. Proper Handling Procedures Should Be Followed. See application note APT0502 on www.microsemi.com www.microsemi.com 1-5 APTGF200SK120D3G – Rev 0 Symbol VCES APTGF200SK120D3G All ratings @ Tj = 25°C unless otherwise specified Electrical Characteristics Symbol Characteristic ICES Zero Gate Voltage Collector Current VCE(on) Collector Emitter on Voltage VGE(th) IGES Gate Threshold Voltage Gate – Emitter Leakage Current Test Conditions Min VGE = 0V, VCE = 1200V Tj = 25°C VGE = 15V IC = 200A Tj = 125°C VGE = VCE , IC = 8 mA VGE = 20V, VCE = 0V 5.2 Typ 3.2 3.9 5.8 Max Unit 5 3.7 mA 6.4 400 V nA Max Unit V Dynamic Characteristics Symbol Characteristic Cies Input Capacitance Cres Reverse Transfer Capacitance QG Td(on) Tr Td(off) Tf Td(on) Tr Td(off) Gate charge Turn-on Delay Time Rise Time Turn-off Delay Time Fall Time Turn-on Delay Time Rise Time Turn-off Delay Time Tf Fall Time Eon Turn On Energy Eoff Turn Off Energy Isc Short Circuit data Test Conditions VGE = 0V, VCE = 25V f = 1MHz VGE=±15V, IC=200A VCE=600V Inductive Switching (25°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω Inductive Switching (125°C) VGE = ±15V VBus = 600V IC = 200A RG = 4.7Ω VGE = ±15V Tj = 125°C VBus = 600V IC = 200A Tj = 125°C RG = 4.7Ω VGE ≤15V ; VBus = 900V tp ≤ 10µs ; Tj = 125°C Min Test Conditions Min Typ 13 1 nF 2.1 µC 100 60 530 ns 30 110 70 550 ns 40 19 mJ 15 1300 A Reverse diode ratings and characteristics IRRM 1200 Maximum Peak Repetitive Reverse Voltage Maximum Reverse Leakage Current IF DC Forward Current VF Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge Err Reverse Recovery Energy Max VR=1200V IF = 200A IF = 200A VR = 600V di/dt =3000A/µs V Tj = 25°C 750 Tj = 125°C 1000 Tc = 80°C Tj = 25°C Tj = 125°C Tj = 25°C 200 2.1 1.9 100 Tj = 125°C Tj = 25°C Tj = 125°C Tj = 25°C Tj = 125°C 200 14 40 5.2 11.2 www.microsemi.com Unit µA A V September, 2008 VRRM Typ ns µC mJ 2-5 APTGF200SK120D3G – Rev 0 Symbol Characteristic APTGF200SK120D3G Thermal and package characteristics Symbol Characteristic Min IGBT Diode RthJC Junction to Case Thermal Resistance VISOL TJ TSTG TC RMS Isolation Voltage, any terminal to case t =1 min, I isol<1mA, 50/60Hz Operating junction temperature range Storage Temperature Range Operating Case Temperature Torque Mounting torque Wt Package Weight For terminals To Heatsink M6 M6 2500 -40 -40 -40 3 3 Typ Max 0.09 0.16 Unit °C/W V 150 125 125 5 5 350 °C N.m g D3 Package outline (dimensions in mm) 1° A www.microsemi.com 3-5 APTGF200SK120D3G – Rev 0 September, 2008 DÉTAIL A APTGF200SK120D3G Typical Performance Curve Output Characteristics (VGE=15V) Output Characteristics 400 400 TJ=25°C VGE=15V VGE=20V 300 IC (A) IC (A) 300 TJ = 125°C 200 VGE=12V 200 VGE=9V 100 100 TJ=125°C 0 0 0 1 2 3 VCE (V) 4 5 6 0 3 4 VCE (V) 5 6 60 VCE = 600V VGE = 15V RG = 4.7 Ω TJ = 125°C 50 300 E (mJ) 40 IC (A) 2 Energy losses vs Collector Current Transfert Characteristics 400 1 TJ=125°C 200 Eon 30 Eoff 20 100 TJ=25°C 10 Err 0 0 5 6 7 8 9 10 11 0 12 100 200 Switching Energy Losses vs Gate Resistance 400 Reverse Bias Safe Operating Area 100 500 VCE = 600V VGE =15V IC = 200A TJ = 125°C 60 Eon 400 IC (A) 80 E (mJ) 300 IC (A) VGE (V) 40 300 200 Eoff VGE=15V TJ=125°C RG=4.7 Ω 100 20 Err 0 0 0 5 10 15 20 25 30 Gate Resistance (ohms) 0 35 300 600 900 1200 1500 VCE (V) maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration IGBT 0.9 September, 2008 0.08 0.7 0.06 0.5 0.04 0.02 0.3 0.1 Single Pulse 0.05 0 0.00001 0.0001 0.001 0.01 0.1 1 10 rectangular Pulse Duration (Seconds) www.microsemi.com 4-5 APTGF200SK120D3G – Rev 0 Thermal Impedance (°C/W) 0.1 APTGF200SK120D3G Forward Characteristic of diode 400 60 50 ZVS 40 30 VCE=600V D=50% RG=4.7 Ω TJ=125°C TC=75°C 300 TJ=125°C IF (A) Fmax, Operating Frequency (kHz) Operating Frequency vs Collector Current 70 200 ZCS TJ=25°C 20 100 hard switching 10 0 0 0 50 100 150 IC (A) 200 0 250 0.5 1 1.5 VF (V) 2 2.5 3 maximum Effective Transient Thermal Impedance, Junction to Case vs Pulse Duration Thermal Impedance (°C/W) 0.18 0.16 Diode 0.9 0.14 0.12 0.1 0.08 0.7 0.5 0.06 0.3 0.04 0.1 0.02 0.05 0 0.00001 Single Pulse 0.0001 0.001 0.01 0.1 1 10 Microsemi reserves the right to change, without notice, the specifications and information contained herein Microsemi's products are covered by one or more of U.S patents 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 6,503,786 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 6,939,743 7,352,045 5,283,201 5,801,417 5,648,283 7,196,634 6,664,594 7,157,886 6,939,743 7,342,262 and foreign patents. U.S and Foreign patents pending. All Rights Reserved. www.microsemi.com 5-5 APTGF200SK120D3G – Rev 0 September, 2008 rectangular Pulse Duration (Seconds)