Fairchild BC81725MTF Npn epitaxial silicon transistor Datasheet

BC817/BC818
tm
NPN Epitaxial Silicon Transistor
Features
• Switching and Amplifier Applications
• Suitable for AF-Driver stages and low power output stages
3
• Complement to BC807/ BC808
2
1
Absolute Maximum Ratings*
Symbol
VCBO
VCEO
1. Base 2. Emitter 3. Collector
Ta = 25°C unless otherwise noted
Parameter
SOT-23
Value
Units
: BC817
: BC818
50
30
V
V
: BC817
: BC818
45
25
V
V
V
Collector-Base Voltage
Collector-Emitter Voltage
VEBO
Emitter-Base Voltage
5
IC
Collector Current (DC)
800
mA
PC
Collector Power Dissipation
310
mW
TJ
Junction Temperature
150
°C
TSTG
Storage Temperature
-65 ~ 150
°C
* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.
Electrical Characteristics* Ta=25°C unless otherwise noted
Symbol
BVCEO
Parameter
Test Condition
Min.
Typ.
Max.
Units
Collector-Emitter Breakdown Voltage
: BC817
: BC818
IC=10mA, IB=0
Collector-Emitter Breakdown Voltage
: BC817
: BC818
IC=0.1mA, VBE=0
BVEBO
Emitter-Base Breakdown Voltage
IE=0.1mA, IC=0
ICES
Collector Cut-off Current
VCE=25V, VBE=0
100
nA
IEBO
Emitter Cut-off Current
VEB=4V, IC=0
100
nA
hFE1
hFE2
DC Current Gain
VCE=1V, IC=100mA
VCE=1V, IC=300mA
VCE (sat)
Collector-Emitter Saturation Voltage
IC=500mA, IB=50mA
VBE (on)
Base-Emitter On Voltage
VCE=1V, IC=300mA
fT
Current Gain Bandwidth Product
VCE=5V, IC=10mA
f=50MHz
Cob
Output Capacitance
VCB=10V, f=1MHz
BVCES
45
25
V
V
50
30
V
V
5
V
100
60
630
0.7
1.2
100
V
V
MHz
12
pF
* Pulse Test: Pulse Width≤300µs, Duty Cycle≤2%
©2006 Fairchild Semiconductor Corporation
BC817/BC818 Rev. B
1
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
November 2006
Classification
16
25
40
hFE1
110 ~ 250
160 ~ 400
250 ~ 630
hFE2
60~
100~
170~
Ordering Information
Device(note1)
Device Marking
Package
Packing Method
Qty(pcs)
Pin Difinitions
BC81716MTF
BC81725MTF
8FA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
8FB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81740MTF
8FC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81816MTF
8GA
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81825MTF
8GB
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
BC81840MTF
8GC
SOT-23
Tape & Reel
3000
1.Base 2.Emitter 3.Collector
Note1 :
Affix “-16,-25,-40” means hFE classification.
Affix “-M” means the matte type package.
Affix “-TF” means the tape & reel type packing.
2
BC817/BC818 Rev. B
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
hFE Classification
BC817/BC818 NPN Epitaxial Silicon Transistor
Typical Performance Characteristics
1.0
600
hfe, Current Gain
500
Vbe(on), Base-Emitter On Voltage,[V]
BC81725MTF
Vce=1V
400
300
200
o
-25 C
o
25 C
o
o
125 C
75 C
100
VCE = 1V
0.9
o
0.8
125 C
o
75 C
o
25 C
0.7
0.6
0.5
0.4
0.3
0
1
10
100
1
1000
10
100
Collector Current, [mA]
Collector Current, [mA]
Figure 1. DC current Gain
Figure 2. Base-Emitter On Voltage
1.2
Ic=10Ib
Ic=10Ib
o
Vbe(sat), Saturation Voltage,[V]
Vce(sat), Saturation Voltage,[V]
0.4
125 C
0.3
o
75 C
o
25 C
0.2
o
-25 C
0.1
0.0
10
100
1.0
o
o
0.8
o
125 C
0.6
o
75 C
0.4
10
1000
25 C
-25 C
100
1000
Collector Current, [mA]
Collector Current, [mA]
Figure 3. Collector-Emitter Saturation Voltage
Figure 4. Base-Emitter Saturation Voltage
PD - Power Dissipation (W)
0.4
0.3
0.2
0.1
0.0
0
25
50
75
100
125
150
O
Temperature, [ C]
Figure 5. Power Dissipation vs Ambient Temperature
3
BC817/BC818 Rev. B
www.fairchildsemi.com
BC817/BC818 NPN Epitaxial Silicon Transistor
Mechanical Dimensions
±0.10
±0.10
2.40
0.40 ±0.03
1.30
0.45~0.60
0.20 MIN
SOT-23
0.03~0.10
0.38 REF
0.40 ±0.03
+0.05
0.12 –0.023
0.96~1.14
0.97REF
2.90 ±0.10
0.95 ±0.03 0.95 ±0.03
1.90 ±0.03
0.508REF
Dimensions in Millimeters
4
BC817/BC818 Rev. B
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The datasheet is printed for reference information only.
Rev. I21
5
BC817/BC818 Rev. B
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BC817/BC818 NPN Epitaxial Silicon Transistor
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