MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 - 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET DESCRIPTION OUTLINE DRAWING Unit: millimeters (inches) 24+/-0.3 R1.25 (1) 0.6+/-0.15 2MIN The MGFC41V5964 is an internally impedence matched GaAs power FET especially designed for use in 5.9 - 6.4 GHz band amplifiers. The hermetically sealed metal-ceramic package guarantees high raliability. FEATURES Internally matched to 50ohm system High output power P1dB = 12W (TIP.) @ f=5.9 - 6.4 Hz High power gain GLP = 9.5 dB (TYP.) @ f=5.9 - 6.4 GHz High power added efficiency Eadd = 33 % (TYP.) @ f=5.9 - 6.4 GHz Low Distortion[Item-51] IM3=-45 dBc(TYP.)@Po=30dBm S.C.L. 15.8 8.0+/-0.2 (2) 2MIN 17.4+/-0.3 R1.2 (3) 20.4+/-0.2 13.4 4.0+/-0.4 QUALITY GRADE 1.4 IG RECOMMENDED BIAS CONDITIONS VDS = 10V ID = 3.4 A Rg = 50(ohm) 0.1 5.9 - 6.4GHz band amplifiers 2.4+/-0.2 APPLICATION (1): GATE (2): SOURCE (FLANGE) (3): DRAIN GF-18 Refer to Bias Procedure ABSOLUTE MAXIMUM RATINGS Symbol Parameter Ratings Unit VGDO Gate to drain voltage -15 V VGSO Gate to source voltage -15 V ID Drain current 12 A IGR Reverse gate current -30 mA IGF Forward gate current 63 mA PT Total power dissipation *1 53.6 W Tch Channel temperature 175 DegreesC Tstg Storage temperature -65 to +175 DegreesC *1 : Tc=25 DegreesC ABSOLUTE MAXIMUM RATINGS Symbol Parameter Limits Test conditions Min Unit Typ Max IDSS Saturated drain current VDS = 3V , VGS = 0V - - 12 A gm Transconductance VDS = 3V , ID = 3.0A - 3 - S VDS = 3V , ID = 30mA - - -5 V 40 41 - dBm 8.5 9.5 - dB - 33 - % -42 -45 - dBc - - 2.8 C/W VGS(off) P1dB GLP Gate to source cut-off voltage Output power at 1dB gain compression Linear power gain Eadd Power added efficiency IM3 *2 3rd order IM distortion Rth(ch-c) Thermal resistance *1 VDS = 10V , ID = 3.4A , f = 5.9 - 6.4 GHz Delta Vf method *1 : Channel to case *2 : Item-51,2tone test,Po=30dBm Single Carrier Level,f=6.4GHz,Delta f=10MHz MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9-6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET TYPICAL CHARACTERISTICS (Ta=25 DegreesC) Po,Eadd vs. Pin 45 18 43 VDS=10V ID=3.4A 16 14 41 12 40 GLP 39 10 38 8 37 6 5.8 5.9 6.0 6.1 6.2 6.3 6.4 OUTPUT POWER Po (dBm) 40 P1dB LINEAR POWER GAIN GLP (dB) OUTPUT POWER P1dB (dBm) 42 100 VDS=10 VDS=10V V ID=3.4A IDS 6 4 f=6.15GHz 80 Po 35 60 30 40 Eadd 20 25 0 20 15 6.5 20 25 30 POWER ADDED EFFICIENCY Eadd (%) P1dB,GLP vs. f 35 INPUT POWER Pin (dBm) FREQUENCY f (GHz) Po,IM3 vs. Pin 0 VDS=10V IDS=3.4A f=6.4GHz Delta f=10MHz 2-tone test 34 32 -20 Po 30 -30 IM3 28 -40 26 -50 24 -60 17 S -10 19 21 23 25 IM3 (dBc) OUTPUT POWER Po (dBm) S.C.L. 36 27 INPUT POWER Pin (dBm) S.C.L. PARAMETERS (Ta=25 DegreesC , VDS=10V , IDS=3.4A) S Parameters (TYP.) f (GHz) S11 Magn. Angle(deg.) S21 Magn. Angle(deg.) Magn. S12 Angle(deg.) Magn. S22 Angle(deg.) 5.9 0.37 124 2.98 -81 0.051 -131 0.31 111 6.0 0.35 105 2.94 -96 0.053 -145 0.31 102 6.1 0.32 84 2.91 -112 0.058 -163 0.30 94 6.2 0.29 64 2.88 -128 0.060 -177 0.29 87 6.3 0.25 38 2.86 -144 0.064 167 0.26 82 6.4 0.23 8 2.83 -161 0.066 152 0.22 81 MITSUBISHI ELECTRIC June/2004 MITSUBISHI SEMICONDUCTOR <GaAs FET> MGFC41V5964 5.9 ~ 6.4GHz BAND 12W INTERNALLY MATCHED GaAs FET MITSUBISHI ELECTRIC June/2004