BZX84B4V7LT1, BZX84C2V4LT1 Series Zener Voltage Regulators 225 mW SOT−23 Surface Mount This series of Zener diodes is offered in the convenient, surface mount plastic SOT−23 package. These devices are designed to provide voltage regulation with minimum space requirement. They are well suited for applications such as cellular phones, hand held portables, and high density PC boards. http://onsemi.com 3 Cathode 1 Anode Features • • • • • • • 225 mW Rating on FR−4 or FR−5 Board Zener Breakdown Voltage Range − 2.4 V to 75 V Package Designed for Optimal Automated Board Assembly Small Package Size for High Density Applications ESD Rating of Class 3 (>16 KV) per Human Body Model Tight Tolerance Series Available (See Page 4) Pb−Free Packages are Available MARKING DIAGRAM 3 1 2 Mechanical Characteristics CASE: Void-free, transfer-molded, thermosetting plastic case FINISH: Corrosion resistant finish, easily Solderable MAXIMUM CASE TEMPERATURE FOR SOLDERING PURPOSES: 260°C for 10 Seconds POLARITY: Cathode indicated by polarity band FLAMMABILITY RATING: UL 94 V−0 SOT−23 CASE 318 STYLE 8 xxx M G G 1 xxx = Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) * Date Code orientation may vary depending upon manufacturing location. ORDERING INFORMATION MAXIMUM RATINGS Rating Symbol Total Power Dissipation on FR−5 Board, (Note 1) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA Total Power Dissipation on Alumina Substrate, (Note 2) @ TA = 25°C Derated above 25°C Thermal Resistance, Junction−to−Ambient PD RqJA Junction and Storage Temperature Range TJ, Tstg Package Shipping† SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel SOT−23 10,000/Tape & Reel SOT−23 (Pb−Free) 10,000/Tape & Reel SOT−23 3000/Tape & Reel SOT−23 (Pb−Free) 3000/Tape & Reel BZX84BxxxLT3 SOT−23 10,000/Tape & Reel BZX84BxxxLT3G SOT−23 10,000/Tape & Reel (Pb−Free) Device Max Unit 225 1.8 556 mW mW/°C °C/W 300 2.4 417 mW mW/°C °C/W BZX84CxxxLT3G −65 to +150 °C BZX84BxxxLT1G BZX84CxxxLT1 Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−5 = 1.0 X 0.75 X 0.62 in. 2. Alumina = 0.4 X 0.3 X 0.024 in., 99.5% alumina. BZX84CxxxLT1G BZX84CxxxLT3 BZX84BxxxLT1 †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specification Brochure, BRD8011/D. DEVICE MARKING INFORMATION See specific marking information in the device marking column of the Electrical Characteristics table on page 3 of this data sheet. © Semiconductor Components Industries, LLC, 2009 July, 2009 − Rev. 13 1 Publication Order Number: BZX84C2V4LT1/D BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS I (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Parameter Symbol VZ Reverse Zener Voltage @ IZT IZT Reverse Current ZZT Maximum Zener Impedance @ IZT IR Reverse Leakage Current @ VR VR Reverse Voltage IF Forward Current VF Forward Voltage @ IF QVZ C IF VZ VR Maximum Temperature Coefficient of VZ IR VF IZT Zener Voltage Regulator Max. Capacitance @ VR = 0 and f = 1 MHz http://onsemi.com 2 V BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84CxxxLT1 SERIES (STANDARD TOLERANCE) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) (Devices listed in bold, italic are ON Semiconductor Preferred devices.) VZ1 (Volts) @ IZT1 = 5 mA (Note 3) Device Marking Min Nom Max ZZT1 (W) @ IZT1 = 5 mA BZX84C2V4LT1, G Z11 2.2 2.4 2.6 BZX84C2V7LT1, G Z12 2.5 2.7 2.9 BZX84C3V0LT1, G Z13 2.8 3 BZX84C3V3LT1, G Z14 3.1 BZX84C3V6LT1, G Z15 3.4 BZX84C3V9LT1, G Z16 BZX84C4V3LT1, G BZX84C4V7LT1, G VZ2 (V) @ IZT2 = 1 mA (Note 3) Min Max ZZT2 (W) @ IZT2 = 1 mA 100 1.7 2.1 100 1.9 2.4 3.2 95 2.1 3.3 3.5 95 3.6 3.8 90 3.7 3.9 4.1 W9 4 4.3 Z1 4.4 4.7 BZX84C5V1LT1, G Z2 4.8 BZX84C5V6LT1, G Z3 5.2 BZX84C6V2LT1, G Z4 BZX84C6V8LT1, G BZX84C7V5LT1, G VZ3 (V) @ IZT3 = 20 mA (Note 3) Min Max ZZT3 (W) @ IZT3 = 20 mA 600 2.6 3.2 50 600 3 3.6 50 2.7 600 3.3 3.9 2.3 2.9 600 3.6 2.7 3.3 600 3.9 90 2.9 3.5 600 4.6 90 3.3 4 5 80 3.7 4.7 5.1 5.4 60 4.2 5.3 5.6 6 40 4.8 6 5.8 6.2 6.6 10 5.6 Z5 6.4 6.8 7.2 15 Z6 7 7.5 7.9 15 BZX84C8V2LT1, G Z7 7.7 8.2 8.7 BZX84C9V1LT1, G Z8 8.5 9.1 BZX84C10LT1, G Z9 9.4 10 BZX84C11LT1, G Y1 10.4 11 BZX84C12LT1, G Y2 11.4 BZX84C13LT1, G Y3 12.4 BZX84C15LT1, G Y4 BZX84C16LT1, G BZX84C18LT1, G Max Reverse Leakage Current qVZ (mV/k) @ IZT1 = 5 mA VR Volts Min Max C (pF) @ VR = 0 f = 1 MHz 50 1 −3.5 0 450 20 1 −3.5 0 450 50 10 1 −3.5 0 450 4.2 40 5 1 −3.5 0 450 4.5 40 5 1 −3.5 0 450 4.1 4.7 30 3 1 −3.5 −2.5 450 600 4.4 5.1 30 3 1 −3.5 0 450 500 4.5 5.4 15 3 2 −3.5 0.2 260 480 5 5.9 15 2 2 −2.7 1.2 225 400 5.2 6.3 10 1 2 −2.0 2.5 200 6.6 150 5.8 6.8 6 3 4 0.4 3.7 185 6.3 7.2 80 6.4 7.4 6 2 4 1.2 4.5 155 6.9 7.9 80 7 8 6 1 5 2.5 5.3 140 15 7.6 8.7 80 7.7 8.8 6 0.7 5 3.2 6.2 135 9.6 15 8.4 9.6 100 8.5 9.7 8 0.5 6 3.8 7.0 130 10.6 20 9.3 10.6 150 9.4 10.7 10 0.2 7 4.5 8.0 130 11.6 20 10.2 11.6 150 10.4 11.8 10 0.1 8 5.4 9.0 130 12 12.7 25 11.2 12.7 150 11.4 12.9 10 0.1 8 6.0 10.0 130 13 14.1 30 12.3 14 170 12.5 14.2 15 0.1 8 7.0 11.0 120 13.8 15 15.6 30 13.7 15.5 200 13.9 15.7 20 0.05 10.5 9.2 13.0 110 Y5 15.3 16 17.1 40 15.2 17 200 15.4 17.2 20 0.05 11.2 10.4 14.0 105 Y6 16.8 18 19.1 45 16.7 19 225 16.9 19.2 20 0.05 12.6 12.4 16.0 100 BZX84C20LT1, G Y7 18.8 20 21.2 55 18.7 21.1 225 18.9 21.4 20 0.05 14 14.4 18.0 85 BZX84C22LT1, G Y8 20.8 22 23.3 55 20.7 23.2 250 20.9 23.4 25 0.05 15.4 16.4 20.0 85 BZX84C24LT1, G Y9 22.8 24 25.6 70 22.7 25.5 250 22.9 25.7 25 0.05 16.8 18.4 22.0 80 Device* VZ1 Below @ IZT1 = 2 mA VZ2 Below @ IZT2 = 0.1 mA VZ3 Below @ IZT3 = 10 mA Device Marking Min Nom Max ZZT1 Below @ IZT1 = 2 mA Min Max ZZT2 Below @ IZT4 = 0.5 mA Min Max ZZT3 Below @ IZT3 = 10 mA BZX84C27LT1, G Y10 25.1 27 28.9 80 25 28.9 300 25.2 29.3 45 BZX84C30LT1, G Y11 28 30 32 80 27.8 32 300 28.1 32.4 BZX84C33LT1, G Y12 31 33 35 80 30.8 35 325 31.1 BZX84C36LT1, G Y13 34 36 38 90 33.8 38 350 34.1 BZX84C39LT1, G Y14 37 39 41 130 36.7 41 350 BZX84C43LT1, G Y15 40 43 46 150 39.7 46 375 BZX84C47LT1, G Y16 44 47 50 170 43.7 50 BZX84C51LT1, G Y17 48 51 54 180 47.6 BZX84C56LT1, G Y18 52 56 60 200 51.5 BZX84C62LT1, G Y19 58 62 66 215 BZX84C68LT1, G Y20 64 68 72 BZX84C75LT1, G Y21 70 75 79 Device IR mA @ Max Reverse Leakage Current qVZ (mV/k) Below @ IZT1 = 2 mA VR (V) Min Max C (pF) @ VR = 0 f = 1 MHz 0.05 18.9 21.4 25.3 70 50 0.05 21 24.4 29.4 70 35.4 55 0.05 23.1 27.4 33.4 70 38.4 60 0.05 25.2 30.4 37.4 70 37.1 41.5 70 0.05 27.3 33.4 41.2 45 40.1 46.5 80 0.05 30.1 37.6 46.6 40 375 44.1 50.5 90 0.05 32.9 42.0 51.8 40 54 400 48.1 54.6 100 0.05 35.7 46.6 57.2 40 60 425 52.1 60.8 110 0.05 39.2 52.2 63.8 40 57.4 66 450 58.2 67 120 0.05 43.4 58.8 71.6 35 240 63.4 72 475 64.2 73.2 130 0.05 47.6 65.6 79.8 35 255 69.4 79 500 70.3 80.2 140 0.05 52.5 73.4 88.6 35 3. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 3 IR mA @ BZX84B4V7LT1, BZX84C2V4LT1 Series ELECTRICAL CHARACTERISTICS − BZX84BxxxL (Tight Tolerance Series) (Pinout: 1-Anode, 2-No Connection, 3-Cathode) (TA = 25°C unless otherwise noted, VF = 0.90 V Max. @ IF = 10 mA) Device Device Marking VZ (Volts) @ IZT = 5 mA (Note 4) Max Reverse Leakage Current ZZT (W) @ IZT = 5 mA (Note 4) IR mA Min Nom Max Max @ qVZ (mV/k) @ IZT = 5 mA Volts Min Max C (pF) @ VR =0, f = 1 MHz VR BZX84B4V7LT1, G T10 4.61 4.7 4.79 80 3 2 −3.5 0.2 260 BZX84B5V1LT1, G T11 5.00 5.1 5.20 60 2 2 −2.7 1.2 225 BZX84B5V6LT1, G T12 5.49 5.6 5.71 40 1 2 −2 2.5 200 BZX84B6V2LT1, G T13 6.08 6.2 6.32 10 3 4 0.4 3.7 185 BZX84B6V8LT1, G T14 6.66 6.8 6.94 15 2 4 1.2 4.5 155 BZX84B7V5LT1, G T15 7.35 7.5 7.65 15 1 5 2.5 5.3 140 BZX84B8V2LT1, G T16 8.04 8.2 8.36 15 0.7 5 3.2 6.2 135 BZX84B9V1LT1, G T17 8.92 9.1 9.28 15 0.5 6 3.8 7 130 BZX84B12LT1, G T18 11.8 12 12.2 25 0.1 8 6 10 130 BZX84B15LT1, G T22 14.7 15 15.3 30 0.05 10.5 9.2 13 110 BZX84B16LT1, G T19 15.7 16 16.3 40 0.05 11.2 10.4 14 105 BZX84B18LT1, G T20 17.6 18 18.4 45 0.05 12.6 12.4 16 100 BZX84B22LT1, G T24 21.6 22 22.4 55 0.05 15.4 16.4 20 85 BZX84B24LT1, G T25 23.5 24 24.5 70 0.05 16.8 18.4 22 80 4. Zener voltage is measured with a pulse test current IZ at an ambient temperature of 25°C. * The “G” suffix indicates Pb−Free package available. http://onsemi.com 4 BZX84B4V7LT1, BZX84C2V4LT1 Series 8 100 7 θ VZ, TEMPERATURE COEFFICIENT (mV/°C) θ VZ, TEMPERATURE COEFFICIENT (mV/°C) TYPICAL CHARACTERISTICS TYPICAL TC VALUES 6 5 4 VZ @ IZT 3 2 1 0 -1 -2 -3 2 3 4 5 6 7 8 9 10 VZ, NOMINAL ZENER VOLTAGE (V) 11 12 TYPICAL TC VALUES VZ @ IZT 10 1 10 100 VZ, NOMINAL ZENER VOLTAGE (V) Figure 1. Temperature Coefficients (Temperature Range − 55°C to +150°C) Figure 2. Temperature Coefficients (Temperature Range − 55°C to +150°C) 1000 IZ = 1 mA TJ = 25°C IZ(AC) = 0.1 IZ(DC) f = 1 kHz IF, FORWARD CURRENT (mA) Z ZT, DYNAMIC IMPEDANCE ( Ω ) 1000 100 75 V (MMBZ5267BLT1) 91 V (MMBZ5270BLT1) 100 5 mA 20 mA 10 10 150°C 1 1 10 VZ, NOMINAL ZENER VOLTAGE 100 1 0.4 Figure 3. Effect of Zener Voltage on Zener Impedance 0.5 75°C 25°C 0.6 0°C 0.7 0.8 0.9 1.0 VF, FORWARD VOLTAGE (V) Figure 4. Typical Forward Voltage http://onsemi.com 5 1.1 1.2 BZX84B4V7LT1, BZX84C2V4LT1 Series TYPICAL CHARACTERISTICS 1000 1000 C, CAPACITANCE (pF) 0 V BIAS 1 V BIAS I R , LEAKAGE CURRENT (μA) TA = 25°C 100 BIAS AT 50% OF VZ NOM 10 1 1 10 VZ, NOMINAL ZENER VOLTAGE (V) 100 100 10 1 +150°C 0.1 0.01 0.001 +25°C 0.0001 -55°C 0.00001 0 10 Figure 5. Typical Capacitance 20 30 40 50 60 70 VZ, NOMINAL ZENER VOLTAGE (V) Figure 6. Typical Leakage Current 100 100 TA = 25°C I Z , ZENER CURRENT (mA) I Z , ZENER CURRENT (mA) TA = 25°C 10 1 0.1 0.01 80 0 2 4 6 8 VZ, ZENER VOLTAGE (V) 1 0.1 0.01 12 10 10 10 30 50 70 VZ, ZENER VOLTAGE (V) 90 Figure 8. Zener Voltage versus Zener Current (12 V to 91 V) Figure 7. Zener Voltage versus Zener Current (VZ Up to 12 V) http://onsemi.com 6 90 BZX84B4V7LT1, BZX84C2V4LT1 Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AN D SEE VIEW C 3 HE E c 1 NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. 318−01 THRU −07 AND −09 OBSOLETE, NEW STANDARD 318−08. 2 e b DIM A A1 b c D E e L L1 HE 0.25 q A L A1 L1 VIEW C MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 STYLE 8: PIN 1. ANODE 2. NO CONNECTION 3. CATHODE SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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