SemiHow HTU4-600 600v 4a triac Datasheet

HTU4-600
VDRM = 600 V
HTU4-600
IT(RMS) = 4.0 A
600V 4A TRIAC
1.T1 2. T2 3. Gate
FEATURES
TO-251
 Repetitive Peak Off-State Voltage: 600V
 R.M.S On-State Current (IT(RMS) = 4A)
 High Commutation dv/dt
1
2
3
 Sensitive Gate Triggering 4 Mode
HTU4-600
General Description
The devices is sensitive gate TRIAC suitable for direct coupling to
TTL,HTL,CMOS and application such as various logic functions,
low power AC switching applications, such as fan speed, small light
controllers and home appliance equipment.
Absolute Maximum Ratings
Symbol
(Ta=25℃)
Parameter
VDRM
Repetitive Peak Off-State Voltage
IT(RMS)
R.M.S On-State Current (Ta = 107℃)
Value
Units
600
V
4
A
50Hz
30
A
60Hz
33
A
ITSM
Surge On-State Current
(One Cycle, 50/60Hz, Peak, Non Repetitive)
VGM
Peak Gate Voltage
7
V
IGM
Peak Gate Current
1
A
PGM
Peak Gate Power Dissipation
1.5
W
TSTG
Storage Temperature Range
-40 to +125
℃
Operating Temperature
-40 to +125
℃
TJ
◎ SEMIHOW REV.A0,Jan 2010
Symbol
IGT
(Ta=25℃)
Parameter
Gate Trigger Current
Test Conditions
VD=6V, RL=10Ω
Min
Typ
Max
Units
1+, 1-, 3-
5
mA
3+
10
mA
1+, 1-, 3-
1.4
V
1.8
V
VGT
Gate Trigger Voltage
VD=6V, RL=10Ω
VGD
Non Trigger Gate Voltage
TJ=125℃, VD=1/2VDRM
0.2
V
Critical Rate of Rise of Off-State
Voltage at Communication
TJ=125℃, VD=2/3VDRM
(di/dt)c=-0.5A/ms
5.0
V/uS
(dv/dt)c
IH
3+
Holding Current
IDRM
Repetitive Peak Off-State Current
VD=VDRM, Single Phase,
Half Wave, TJ=125℃
VTM
Peak On-State Voltage
IT=6A, Inst, Measurement
10
mA
1.0
mA
1.7
V
Max
Units
3.0
℃/W
Thermal Characteristics
Symbol
RθJC
Parameter
Thermal Resistance
Test Conditions
Junction to Case
Min
Typ
◎ SEMIHOW REV.A0,Jan 2010
HTU4-600
Electrical Characteristics
HTU4-600
Typical Characteristics
Fig 1. Gate Characteristics
Gate Voltage [V]
On-State Current [A]
Fig 2. On-State Voltage
On-State Voltage [V]
Gate Current [mA]
Fig 4. On-State Current
vs. Maximum power Dissipation
Power Dissipation [W]
Fig 3. Gate Trigger Voltage
vs. Junction Temperature
RMS On-State Current [A]
Junction Temperature [℃]
Fig 6. Surge On-State Current
Rating (Non-Repetitive)
Allowable Case Temp [℃]
Surge On-State Current [A]
Fig 5. On-State Current
vs. Allowable Case Temperature
RMS On-State Current [A]
Time [Cycles]
◎ SEMIHOW REV.A0,Jan 2010
Fig 7. Gate Trigger Current
vs. Junction Temperature
Transient Thermal
Impedance [℃/W]
Fig 8. Transient Thermal
Impedance
Time [Sec]
Junction Temperature [℃]
Fig 7. Gate Trigger Characteristics Test Circuit
Test Procedure Ⅰ
Test Procedure Ⅱ
Test Procedure Ⅲ
Test Procedure Ⅳ
◎ SEMIHOW REV.A0,Jan 2010
HTU4-600
Typical Characteristics
HTU4-600
Package Dimension
TO-251
2.3±0.1
6.6±0.2
5.35±0.15
0.75±0.15
0.8±0.15
0.6±0.1
2.3typ
7±0.2
7.5±0.3
5.6±0.2
0.5±0.05
0.5+0.1
-0.05
1.2±0.3
2.3typ
◎ SEMIHOW REV.A0,Jan 2010
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