HTU4-600 VDRM = 600 V HTU4-600 IT(RMS) = 4.0 A 600V 4A TRIAC 1.T1 2. T2 3. Gate FEATURES TO-251 Repetitive Peak Off-State Voltage: 600V R.M.S On-State Current (IT(RMS) = 4A) High Commutation dv/dt 1 2 3 Sensitive Gate Triggering 4 Mode HTU4-600 General Description The devices is sensitive gate TRIAC suitable for direct coupling to TTL,HTL,CMOS and application such as various logic functions, low power AC switching applications, such as fan speed, small light controllers and home appliance equipment. Absolute Maximum Ratings Symbol (Ta=25℃) Parameter VDRM Repetitive Peak Off-State Voltage IT(RMS) R.M.S On-State Current (Ta = 107℃) Value Units 600 V 4 A 50Hz 30 A 60Hz 33 A ITSM Surge On-State Current (One Cycle, 50/60Hz, Peak, Non Repetitive) VGM Peak Gate Voltage 7 V IGM Peak Gate Current 1 A PGM Peak Gate Power Dissipation 1.5 W TSTG Storage Temperature Range -40 to +125 ℃ Operating Temperature -40 to +125 ℃ TJ ◎ SEMIHOW REV.A0,Jan 2010 Symbol IGT (Ta=25℃) Parameter Gate Trigger Current Test Conditions VD=6V, RL=10Ω Min Typ Max Units 1+, 1-, 3- 5 mA 3+ 10 mA 1+, 1-, 3- 1.4 V 1.8 V VGT Gate Trigger Voltage VD=6V, RL=10Ω VGD Non Trigger Gate Voltage TJ=125℃, VD=1/2VDRM 0.2 V Critical Rate of Rise of Off-State Voltage at Communication TJ=125℃, VD=2/3VDRM (di/dt)c=-0.5A/ms 5.0 V/uS (dv/dt)c IH 3+ Holding Current IDRM Repetitive Peak Off-State Current VD=VDRM, Single Phase, Half Wave, TJ=125℃ VTM Peak On-State Voltage IT=6A, Inst, Measurement 10 mA 1.0 mA 1.7 V Max Units 3.0 ℃/W Thermal Characteristics Symbol RθJC Parameter Thermal Resistance Test Conditions Junction to Case Min Typ ◎ SEMIHOW REV.A0,Jan 2010 HTU4-600 Electrical Characteristics HTU4-600 Typical Characteristics Fig 1. Gate Characteristics Gate Voltage [V] On-State Current [A] Fig 2. On-State Voltage On-State Voltage [V] Gate Current [mA] Fig 4. On-State Current vs. Maximum power Dissipation Power Dissipation [W] Fig 3. Gate Trigger Voltage vs. Junction Temperature RMS On-State Current [A] Junction Temperature [℃] Fig 6. Surge On-State Current Rating (Non-Repetitive) Allowable Case Temp [℃] Surge On-State Current [A] Fig 5. On-State Current vs. Allowable Case Temperature RMS On-State Current [A] Time [Cycles] ◎ SEMIHOW REV.A0,Jan 2010 Fig 7. Gate Trigger Current vs. Junction Temperature Transient Thermal Impedance [℃/W] Fig 8. Transient Thermal Impedance Time [Sec] Junction Temperature [℃] Fig 7. Gate Trigger Characteristics Test Circuit Test Procedure Ⅰ Test Procedure Ⅱ Test Procedure Ⅲ Test Procedure Ⅳ ◎ SEMIHOW REV.A0,Jan 2010 HTU4-600 Typical Characteristics HTU4-600 Package Dimension TO-251 2.3±0.1 6.6±0.2 5.35±0.15 0.75±0.15 0.8±0.15 0.6±0.1 2.3typ 7±0.2 7.5±0.3 5.6±0.2 0.5±0.05 0.5+0.1 -0.05 1.2±0.3 2.3typ ◎ SEMIHOW REV.A0,Jan 2010