CEL NE8500100 C-band medium power gaas mesfet Datasheet

C-BAND MEDIUM POWER GaAs MESFET NE8500100
NE8500199
ABSOLUTE MAXIMUM RATINGS1
FEATURES
(TC = 25 °C unless otherwise noted)
• HIGH OUTPUT POWER: 1 W
SYMBOLS
PARAMETERS
UNITS
RATINGS
• HIGH LINEAR GAIN: 9.0 dB
VDS
Drain to Source Voltage
• HIGH EFFICIENCY: 37% (PAE)
VGD
Gate to Drain Voltage
V
-18
• INDUSTRY STANDARD PACKAGING
VGS
Gate to Source Voltage
V
-12
• THIS DEVICE IS ALSO AVAILABLE AS A
TWO-CELL CHIP: NE8500100
IDS
Drain Current
A
IDSS
IGS
Gate Current
mA
6.0
DESCRIPTION
PT
Total Power Dissipation
W
6.0
TCH
Channel Temperature
°C
175
TSTG
Storage Temperature
°C
-65 to +175
RECOMMENDED OPERATING LIMITS
SYMBOLS
PARAMETERS
VDS
Drain to Source Voltage
V
TCH
Channel Temperature
°C
The NE850 Series Transistors are manufactured to NEC's
stringent quality assurance standards to ensure highest reliability and consistent superior performance.
GCOMP
RG
Functional
Characteristics
Electrical DC
Characteristics
SYMBOLS
POUT
GL
ηADD
TYP MAX
9
10
130
dB
Gate Resistance
KΩ
3.0
1
4
= 25°C)
NE8500199
NE8500100
PACKAGE OUTLINE
00 (Chip), 99
Power Out at Fixed Input Power
UNITS MIN
Gain Compression
PART NUMBER
CHARACTERISTICS
15
Note:
1. Operation in excess of any one of these parameters may result in
permanent damage.
The NE8500199 is a medium power GaAs MESFET designed
for up to a 1W output stage or as a driver for higher power
devices. The device has no internal matching and can be
used at frequencies from UHF to 8.5 GHZ. The device is
available in the “99” package or in chip form. The chip is a twocell die; bonding both cells delivers the rated performance.
ELECTRICAL CHARACTERISTICS (TC
V
UNITS
MIN
TYP
MAX
TEST CONDITIONS
dBm
28.5
29.5
PIN = 21.0 dBm
Linear Gain
dB
9.0
f = 7.2 GHz
Collector Efficiency
%
37
VDS = 10 V; IDSQ = 200 mA
200
RG = 1KΩ
IDS
Drain Source Current
mA
IDSS
Saturated Drain Current
mA
330
825
VDS = 2.5 V; VGS = 0 V
-3.0
-1.0
VDS = 2.5 V; IDS = 4 mA
VP
Pinch-off Voltage
V
gm
Transconductance
mS
RTH
Thermal Resistance
°C/W
300
VDS = 2.5 V; IDS = IDSS
60
Channel to Case
California Eastern Laboratories
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
j 50
+90˚
j 100
j 25
+60˚
+120˚
S11
10.1 GHz
j10
+150˚
S22
10.1 GHz
S22
0.1 GHz
0
+30˚
S12
10.1 GHz
S21
0.1 GHz
S12
0.1 GHz S21
10.1 GHz
±180˚
S11
0.1 GHz
-j 10
0˚
-150˚
-j 100
-j 25
-30˚
-60˚
-120˚
-j 50
S21 MAG:
4.0 / DIV., 20.0 FS
S12 MAG:
0.03 / DIV., 0.15 FS
-90˚
NE 8500100 (2 Cells)
VDS = 10 V, IDS = 200 mA
FREQUENCY
GHZ
S21
S11
MAG
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
0.990
0.981
0.933
0.884
0.865
0.859
0.850
0.850
0.850
0.852
0.853
0.854
0.854
0.854
0.854
0.850
0.842
0.839
0.836
0.833
0.834
0.832
S12
ANG
MAG
ANG
-18.400
-36.000
-78.900
-120.400
-142.100
-155.700
-164.900
-172.000
-178.000
176.900
172.600
168.400
164.500
161.000
157.500
153.800
150.700
147.700
144.600
141.500
138.200
134.900
13.477
12.933
10.387
6.899
4.970
3.842
3.083
2.554
2.224
1.942
1.704
1.501
1.383
1.256
1.133
1.048
0.968
0.877
0.811
0.774
0.723
0.657
168.400
158.100
132.500
106.600
90.700
79.200
69.600
60.300
52.100
45.400
38.600
29.500
22.900
18.200
11.900
3.800
-0.400
-4.800
-11.800
-17.600
-21.500
-25.600
MAG
0.008
0.013
0.026
0.036
0.040
0.041
0.043
0.045
0.049
0.052
0.057
0.060
0.064
0.070
0.077
0.077
0.078
0.085
0.093
0.102
0.111
0.118
S22
K
ANG
MAG
ANG
74.200
72.500
53.300
37.500
30.700
28.100
31.000
32.300
33.400
33.100
35.700
34.900
35.800
36.000
34.300
30.300
33.300
35.700
34.200
32.400
29.100
25.500
0.122
0.131
0.171
0.210
0.235
0.258
0.278
0.302
0.330
0.355
0.382
0.409
0.433
0.457
0.481
0.502
0.521
0.546
0.568
0.592
0.613
0.633
-27.200
-49.100
-92.100
-121.500
-132.500
-138.400
-141.400
-144.100
-146.900
-149.800
-152.700
-156.300
-160.000
-163.600
-167.400
-171.600
-175.000
-178.400
177.800
174.100
170.300
166.400
MAG1
(dB)
0.107
0.102
0.209
0.378
0.533
0.689
0.871
0.985
1.010
1.048
1.056
1.083
1.070
1.048
1.007
1.063
1.204
1.213
1.152
1.046
0.962
0.954
32.265
29.978
26.015
22.825
20.943
19.718
18.555
17.540
15.948
14.384
13.303
12.227
11.727
11.197
11.166
9.803
8.207
7.348
7.037
7.486
8.138
7.457
S-Parameters include 0.0010" (24.5 µm) gold bond wires as follows:
Gate, 2 wires, 1 per bond pad, 0.0265" (674µm) long each wire
Drain, 2 wires, 1 per bond pad, 0.0232" (590 µm) long each wire
Source, 4 wires, 2 per side, 0.0092" (234 µm) long each wire
OUTLINE DIMENSIONS
PACKAGE OUTLINE 99
(Units in mm)
CHIP (00)
(Units in µm)
5.2±0.3
780
1.0±0.1
4.0 MIN BOTH LEADS
Gate
290
170
φ2.2±0.2
D
D
125
4.3±0.2
4.0±0.1
Source
Drain
+.06
0.1 -.02
640
0.6±0.1
5.2±0.3
11.0±0.15
15.0±0.3
S
0.2 MAX
G
G
100
5.0 MAX
1.7±0.15
6.0±0.2
100
1.2
Die Thickness 140
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS (TA = 25 °C)
+90˚
j 50
S11
10.1 GHz
j 25
+60˚
+120˚
j 100
+150˚
j10
+30˚
S22
10.1 GHz
S22
0.1 GHz
0
±180˚
S11
0.1 GHz
S21
0.1 GHz
S12
0.1 GHz
S21
10.1 GHz
S12
10.1 GHz
-150˚
-j 10
-j 100
-j 25
0˚
-30˚
-60˚
-120˚
S21 MAG:
2.0 / DIV., 10.0 FS
S12 MAG:
0.02 / DIV., 0.1 FS
-90˚
-j 50
NE 8500100 (1 Cell)
VDS = 10 V, IDS = 100 mA
FREQUENCY
GHZ
0.10
0.20
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
S11
MAG
1.000
0.995
0.970
0.915
0.868
0.839
0.813
0.803
0.798
0.797
0.796
0.798
0.799
0.801
0.803
0.804
0.800
0.800
0.802
0.805
0.811
0.816
ANG
-8.800
-17.500
-42.300
-77.700
-104.800
-125.600
-141.500
-154.500
-165.700
-175.300
176.400
168.800
161.700
155.400
149.400
143.500
138.300
133.800
129.300
125.000
120.800
116.800
S21
MAG
9.587
9.496
8.950
7.570
6.243
5.191
4.347
3.724
3.284
2.894
2.564
2.308
2.115
1.912
1.729
1.611
1.478
1.342
1.247
1.182
1.099
1.004
ANG
173.800
168.200
151.600
128.200
109.800
95.300
83.100
71.700
61.900
53.300
44.800
34.800
27.100
20.500
12.700
4.100
-1.900
-8.200
-16.200
-23.200
-29.200
-35.200
S12
MAG
0.005
0.008
0.020
0.034
0.042
0.047
0.050
0.052
0.054
0.056
0.057
0.059
0.061
0.064
0.067
0.070
0.068
0.070
0.075
0.081
0.086
0.092
S22
ANG
88.900
83.000
69.500
53.100
42.600
34.000
29.400
26.000
23.200
21.200
20.500
18.200
17.800
17.900
15.900
11.500
10.700
12.600
11.900
10.000
6.900
2.800
MAG
0.396
0.393
0.377
0.338
0.302
0.274
0.256
0.246
0.243
0.243
0.247
0.253
0.260
0.272
0.284
0.296
0.305
0.323
0.344
0.366
0.390
0.414
ANG
-4.900
-8.700
-19.900
-35.800
-48.400
-59.000
-67.500
-76.600
-85.900
-95.000
-104.000
-113.200
-122.000
-130.800
-139.300
-148.700
-156.000
-163.400
-171.400
-179.300
172.500
164.300
K
MAG1
-0.020
0.043
0.147
0.279
0.406
0.524
0.675
0.789
0.874
0.953
1.055
1.115
1.164
1.206
1.251
1.264
1.456
1.549
1.511
1.418
1.357
1.312
(dB)
32.827
30.745
26.508
23.476
21.721
20.432
19.392
18.550
17.840
17.133
15.097
13.864
12.943
12.013
11.101
10.528
9.366
8.462
7.988
7.798
7.498
7.030
S-parameters include 0.0010" (25.4 µm) gold bond wires as follows:
Gate, 1 wire, 1 per bond pad, 0.0245" (619 µm) long each wire
Drain, 1 wire, 1 per bond pad, 0.0248" (631 µm) long each wire
Source, 2 wires, 2 per side, 0.0090" (229 µm) long each wire
Note:
1. Gain calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
NE8500199 LARGE SIGNAL IMPEDANCES
FREQ (GHz)
ZIN (ohm)
ZOUT (ohm)
5.90
7.08 - j 20.24
15.95 - j 5.70
6.20
8.37 - j 23.28
15.36 - j 8.11
6.40
16.11 - j 41.46
18.87 - j 19.33
6.50
9.30 - j 11.82
23.53 + j 3.06
ZIN is the impedance of the input matching circuit as seen by the gate.
ZOUT is the impedance of the output matching circuit as seen by the drain.
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
NE8500100, NE8500199
TYPICAL SCATTERING PARAMETERS (TA = 25 °)
+90˚
j 50
S22
10.0 GHz
j10
+150˚
±180˚
0
S22
0.1 GHz
+60˚
+120˚
j 100
j 25
+30˚
S12
0.1 GHz
S21
0.1 GHz
0˚
S21
10 GHz
S11
0.1 GHz
-150˚
-j 10
S11
10.0 GHz
S12
10 GHz
-j 100
-j 25
-30˚
-60˚
-120˚
S21 MAG:
3.0 / DIV., 15.0 FS
S12 MAG:
0.06 / DIV., 0.30 FS
-90˚
-j 50
NE 8500199
VDS = 10 V, IDS = 200 mA
FREQUENCY
S11
S21
GHZ
MAG
ANG
MAG
0.10
0.50
1.00
1.50
2.00
2.50
3.00
3.50
4.00
4.50
5.00
5.50
6.00
6.50
7.00
7.50
8.00
8.50
9.00
9.50
10.00
0.990
0.916
0.869
0.851
0.840
0.831
0.826
0.824
0.829
0.803
0.784
0.767
0.751
0.726
0.689
0.649
0.604
0.577
0.571
0.611
0.631
-22.700
-91.100
-132.100
-152.900
-166.100
-175.900
176.000
168.800
161.000
152.500
144.700
135.900
125.800
114.100
100.200
83.400
63.200
37.000
5.900
-28.500
-62.900
14.418
10.211
6.444
4.610
3.591
2.975
2.601
2.341
2.127
1.963
1.929
1.916
1.928
1.951
1.957
2.013
2.067
2.102
2.072
2.030
1.812
S12
ANG
165.500
123.300
94.800
76.600
61.900
49.100
37.300
26.000
13.400
3.400
-8.600
-20.700
-33.500
-47.200
-62.400
-78.800
-96.600
-115.500
-135.700
-157.900
177.300
S22
MAG
ANG
0.007
0.024
0.031
0.034
0.038
0.042
0.047
0.053
0.066
0.075
0.084
0.097
0.113
0.130
0.149
0.177
0.206
0.232
0.253
0.277
0.280
70.100
47.700
33.600
29.000
28.100
26.700
25.400
27.400
25.400
15.200
9.300
3.100
-4.800
-13.200
-23.900
-36.800
-51.800
-68.000
-84.700
-103.200
-123.600
MAG
0.065
0.175
0.221
0.241
0.260
0.278
0.296
0.313
0.345
0.337
0.340
0.358
0.381
0.396
0.402
0.431
0.465
0.500
0.534
0.577
0.587
K
ANG
-64.600
-126.400
-149.100
-159.200
-165.600
-170.800
-174.600
-177.800
176.300
166.200
159.800
154.200
149.500
144.200
137.100
129.400
117.200
102.700
87.200
69.700
47.000
MAG1
(dB)
0.097
0.300
0.558
0.797
0.970
1.098
1.129
1.109
0.915
1.007
0.984
0.891
0.767
0.697
0.678
0.601
0.557
0.526
0.512
0.464
0.513
33.138
26.289
23.178
21.322
19.754
16.592
15.244
14.437
15.082
13.658
13.611
12.956
12.320
11.763
11.184
10.559
10.015
9.571
9.133
8.650
8.110
Note:
1. Gain calculations:
MAG =
|S21|
|S12|
(K ±
K 2- 1
). When K ≤ 1, MAG is undefined and MSG values are used. MSG =
2
2
2
|S21|
, K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12
|S12|
2 |S12 S21|
MAG = Maximum Available Gain
MSG = Maximum Stable Gain
EXCLUSIVE NORTH AMERICAN AGENT FOR
RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS
CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279
24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM
01/14/2000
DATA SUBJECT TO CHANGE WITHOUT NOTICE
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