C-BAND MEDIUM POWER GaAs MESFET NE8500100 NE8500199 ABSOLUTE MAXIMUM RATINGS1 FEATURES (TC = 25 °C unless otherwise noted) • HIGH OUTPUT POWER: 1 W SYMBOLS PARAMETERS UNITS RATINGS • HIGH LINEAR GAIN: 9.0 dB VDS Drain to Source Voltage • HIGH EFFICIENCY: 37% (PAE) VGD Gate to Drain Voltage V -18 • INDUSTRY STANDARD PACKAGING VGS Gate to Source Voltage V -12 • THIS DEVICE IS ALSO AVAILABLE AS A TWO-CELL CHIP: NE8500100 IDS Drain Current A IDSS IGS Gate Current mA 6.0 DESCRIPTION PT Total Power Dissipation W 6.0 TCH Channel Temperature °C 175 TSTG Storage Temperature °C -65 to +175 RECOMMENDED OPERATING LIMITS SYMBOLS PARAMETERS VDS Drain to Source Voltage V TCH Channel Temperature °C The NE850 Series Transistors are manufactured to NEC's stringent quality assurance standards to ensure highest reliability and consistent superior performance. GCOMP RG Functional Characteristics Electrical DC Characteristics SYMBOLS POUT GL ηADD TYP MAX 9 10 130 dB Gate Resistance KΩ 3.0 1 4 = 25°C) NE8500199 NE8500100 PACKAGE OUTLINE 00 (Chip), 99 Power Out at Fixed Input Power UNITS MIN Gain Compression PART NUMBER CHARACTERISTICS 15 Note: 1. Operation in excess of any one of these parameters may result in permanent damage. The NE8500199 is a medium power GaAs MESFET designed for up to a 1W output stage or as a driver for higher power devices. The device has no internal matching and can be used at frequencies from UHF to 8.5 GHZ. The device is available in the “99” package or in chip form. The chip is a twocell die; bonding both cells delivers the rated performance. ELECTRICAL CHARACTERISTICS (TC V UNITS MIN TYP MAX TEST CONDITIONS dBm 28.5 29.5 PIN = 21.0 dBm Linear Gain dB 9.0 f = 7.2 GHz Collector Efficiency % 37 VDS = 10 V; IDSQ = 200 mA 200 RG = 1KΩ IDS Drain Source Current mA IDSS Saturated Drain Current mA 330 825 VDS = 2.5 V; VGS = 0 V -3.0 -1.0 VDS = 2.5 V; IDS = 4 mA VP Pinch-off Voltage V gm Transconductance mS RTH Thermal Resistance °C/W 300 VDS = 2.5 V; IDS = IDSS 60 Channel to Case California Eastern Laboratories NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 °C) j 50 +90˚ j 100 j 25 +60˚ +120˚ S11 10.1 GHz j10 +150˚ S22 10.1 GHz S22 0.1 GHz 0 +30˚ S12 10.1 GHz S21 0.1 GHz S12 0.1 GHz S21 10.1 GHz ±180˚ S11 0.1 GHz -j 10 0˚ -150˚ -j 100 -j 25 -30˚ -60˚ -120˚ -j 50 S21 MAG: 4.0 / DIV., 20.0 FS S12 MAG: 0.03 / DIV., 0.15 FS -90˚ NE 8500100 (2 Cells) VDS = 10 V, IDS = 200 mA FREQUENCY GHZ S21 S11 MAG 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 0.990 0.981 0.933 0.884 0.865 0.859 0.850 0.850 0.850 0.852 0.853 0.854 0.854 0.854 0.854 0.850 0.842 0.839 0.836 0.833 0.834 0.832 S12 ANG MAG ANG -18.400 -36.000 -78.900 -120.400 -142.100 -155.700 -164.900 -172.000 -178.000 176.900 172.600 168.400 164.500 161.000 157.500 153.800 150.700 147.700 144.600 141.500 138.200 134.900 13.477 12.933 10.387 6.899 4.970 3.842 3.083 2.554 2.224 1.942 1.704 1.501 1.383 1.256 1.133 1.048 0.968 0.877 0.811 0.774 0.723 0.657 168.400 158.100 132.500 106.600 90.700 79.200 69.600 60.300 52.100 45.400 38.600 29.500 22.900 18.200 11.900 3.800 -0.400 -4.800 -11.800 -17.600 -21.500 -25.600 MAG 0.008 0.013 0.026 0.036 0.040 0.041 0.043 0.045 0.049 0.052 0.057 0.060 0.064 0.070 0.077 0.077 0.078 0.085 0.093 0.102 0.111 0.118 S22 K ANG MAG ANG 74.200 72.500 53.300 37.500 30.700 28.100 31.000 32.300 33.400 33.100 35.700 34.900 35.800 36.000 34.300 30.300 33.300 35.700 34.200 32.400 29.100 25.500 0.122 0.131 0.171 0.210 0.235 0.258 0.278 0.302 0.330 0.355 0.382 0.409 0.433 0.457 0.481 0.502 0.521 0.546 0.568 0.592 0.613 0.633 -27.200 -49.100 -92.100 -121.500 -132.500 -138.400 -141.400 -144.100 -146.900 -149.800 -152.700 -156.300 -160.000 -163.600 -167.400 -171.600 -175.000 -178.400 177.800 174.100 170.300 166.400 MAG1 (dB) 0.107 0.102 0.209 0.378 0.533 0.689 0.871 0.985 1.010 1.048 1.056 1.083 1.070 1.048 1.007 1.063 1.204 1.213 1.152 1.046 0.962 0.954 32.265 29.978 26.015 22.825 20.943 19.718 18.555 17.540 15.948 14.384 13.303 12.227 11.727 11.197 11.166 9.803 8.207 7.348 7.037 7.486 8.138 7.457 S-Parameters include 0.0010" (24.5 µm) gold bond wires as follows: Gate, 2 wires, 1 per bond pad, 0.0265" (674µm) long each wire Drain, 2 wires, 1 per bond pad, 0.0232" (590 µm) long each wire Source, 4 wires, 2 per side, 0.0092" (234 µm) long each wire OUTLINE DIMENSIONS PACKAGE OUTLINE 99 (Units in mm) CHIP (00) (Units in µm) 5.2±0.3 780 1.0±0.1 4.0 MIN BOTH LEADS Gate 290 170 φ2.2±0.2 D D 125 4.3±0.2 4.0±0.1 Source Drain +.06 0.1 -.02 640 0.6±0.1 5.2±0.3 11.0±0.15 15.0±0.3 S 0.2 MAX G G 100 5.0 MAX 1.7±0.15 6.0±0.2 100 1.2 Die Thickness 140 NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 °C) +90˚ j 50 S11 10.1 GHz j 25 +60˚ +120˚ j 100 +150˚ j10 +30˚ S22 10.1 GHz S22 0.1 GHz 0 ±180˚ S11 0.1 GHz S21 0.1 GHz S12 0.1 GHz S21 10.1 GHz S12 10.1 GHz -150˚ -j 10 -j 100 -j 25 0˚ -30˚ -60˚ -120˚ S21 MAG: 2.0 / DIV., 10.0 FS S12 MAG: 0.02 / DIV., 0.1 FS -90˚ -j 50 NE 8500100 (1 Cell) VDS = 10 V, IDS = 100 mA FREQUENCY GHZ 0.10 0.20 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 S11 MAG 1.000 0.995 0.970 0.915 0.868 0.839 0.813 0.803 0.798 0.797 0.796 0.798 0.799 0.801 0.803 0.804 0.800 0.800 0.802 0.805 0.811 0.816 ANG -8.800 -17.500 -42.300 -77.700 -104.800 -125.600 -141.500 -154.500 -165.700 -175.300 176.400 168.800 161.700 155.400 149.400 143.500 138.300 133.800 129.300 125.000 120.800 116.800 S21 MAG 9.587 9.496 8.950 7.570 6.243 5.191 4.347 3.724 3.284 2.894 2.564 2.308 2.115 1.912 1.729 1.611 1.478 1.342 1.247 1.182 1.099 1.004 ANG 173.800 168.200 151.600 128.200 109.800 95.300 83.100 71.700 61.900 53.300 44.800 34.800 27.100 20.500 12.700 4.100 -1.900 -8.200 -16.200 -23.200 -29.200 -35.200 S12 MAG 0.005 0.008 0.020 0.034 0.042 0.047 0.050 0.052 0.054 0.056 0.057 0.059 0.061 0.064 0.067 0.070 0.068 0.070 0.075 0.081 0.086 0.092 S22 ANG 88.900 83.000 69.500 53.100 42.600 34.000 29.400 26.000 23.200 21.200 20.500 18.200 17.800 17.900 15.900 11.500 10.700 12.600 11.900 10.000 6.900 2.800 MAG 0.396 0.393 0.377 0.338 0.302 0.274 0.256 0.246 0.243 0.243 0.247 0.253 0.260 0.272 0.284 0.296 0.305 0.323 0.344 0.366 0.390 0.414 ANG -4.900 -8.700 -19.900 -35.800 -48.400 -59.000 -67.500 -76.600 -85.900 -95.000 -104.000 -113.200 -122.000 -130.800 -139.300 -148.700 -156.000 -163.400 -171.400 -179.300 172.500 164.300 K MAG1 -0.020 0.043 0.147 0.279 0.406 0.524 0.675 0.789 0.874 0.953 1.055 1.115 1.164 1.206 1.251 1.264 1.456 1.549 1.511 1.418 1.357 1.312 (dB) 32.827 30.745 26.508 23.476 21.721 20.432 19.392 18.550 17.840 17.133 15.097 13.864 12.943 12.013 11.101 10.528 9.366 8.462 7.988 7.798 7.498 7.030 S-parameters include 0.0010" (25.4 µm) gold bond wires as follows: Gate, 1 wire, 1 per bond pad, 0.0245" (619 µm) long each wire Drain, 1 wire, 1 per bond pad, 0.0248" (631 µm) long each wire Source, 2 wires, 2 per side, 0.0090" (229 µm) long each wire Note: 1. Gain calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = MAG = Maximum Available Gain MSG = Maximum Stable Gain NE8500199 LARGE SIGNAL IMPEDANCES FREQ (GHz) ZIN (ohm) ZOUT (ohm) 5.90 7.08 - j 20.24 15.95 - j 5.70 6.20 8.37 - j 23.28 15.36 - j 8.11 6.40 16.11 - j 41.46 18.87 - j 19.33 6.50 9.30 - j 11.82 23.53 + j 3.06 ZIN is the impedance of the input matching circuit as seen by the gate. ZOUT is the impedance of the output matching circuit as seen by the drain. 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| NE8500100, NE8500199 TYPICAL SCATTERING PARAMETERS (TA = 25 °) +90˚ j 50 S22 10.0 GHz j10 +150˚ ±180˚ 0 S22 0.1 GHz +60˚ +120˚ j 100 j 25 +30˚ S12 0.1 GHz S21 0.1 GHz 0˚ S21 10 GHz S11 0.1 GHz -150˚ -j 10 S11 10.0 GHz S12 10 GHz -j 100 -j 25 -30˚ -60˚ -120˚ S21 MAG: 3.0 / DIV., 15.0 FS S12 MAG: 0.06 / DIV., 0.30 FS -90˚ -j 50 NE 8500199 VDS = 10 V, IDS = 200 mA FREQUENCY S11 S21 GHZ MAG ANG MAG 0.10 0.50 1.00 1.50 2.00 2.50 3.00 3.50 4.00 4.50 5.00 5.50 6.00 6.50 7.00 7.50 8.00 8.50 9.00 9.50 10.00 0.990 0.916 0.869 0.851 0.840 0.831 0.826 0.824 0.829 0.803 0.784 0.767 0.751 0.726 0.689 0.649 0.604 0.577 0.571 0.611 0.631 -22.700 -91.100 -132.100 -152.900 -166.100 -175.900 176.000 168.800 161.000 152.500 144.700 135.900 125.800 114.100 100.200 83.400 63.200 37.000 5.900 -28.500 -62.900 14.418 10.211 6.444 4.610 3.591 2.975 2.601 2.341 2.127 1.963 1.929 1.916 1.928 1.951 1.957 2.013 2.067 2.102 2.072 2.030 1.812 S12 ANG 165.500 123.300 94.800 76.600 61.900 49.100 37.300 26.000 13.400 3.400 -8.600 -20.700 -33.500 -47.200 -62.400 -78.800 -96.600 -115.500 -135.700 -157.900 177.300 S22 MAG ANG 0.007 0.024 0.031 0.034 0.038 0.042 0.047 0.053 0.066 0.075 0.084 0.097 0.113 0.130 0.149 0.177 0.206 0.232 0.253 0.277 0.280 70.100 47.700 33.600 29.000 28.100 26.700 25.400 27.400 25.400 15.200 9.300 3.100 -4.800 -13.200 -23.900 -36.800 -51.800 -68.000 -84.700 -103.200 -123.600 MAG 0.065 0.175 0.221 0.241 0.260 0.278 0.296 0.313 0.345 0.337 0.340 0.358 0.381 0.396 0.402 0.431 0.465 0.500 0.534 0.577 0.587 K ANG -64.600 -126.400 -149.100 -159.200 -165.600 -170.800 -174.600 -177.800 176.300 166.200 159.800 154.200 149.500 144.200 137.100 129.400 117.200 102.700 87.200 69.700 47.000 MAG1 (dB) 0.097 0.300 0.558 0.797 0.970 1.098 1.129 1.109 0.915 1.007 0.984 0.891 0.767 0.697 0.678 0.601 0.557 0.526 0.512 0.464 0.513 33.138 26.289 23.178 21.322 19.754 16.592 15.244 14.437 15.082 13.658 13.611 12.956 12.320 11.763 11.184 10.559 10.015 9.571 9.133 8.650 8.110 Note: 1. Gain calculations: MAG = |S21| |S12| (K ± K 2- 1 ). When K ≤ 1, MAG is undefined and MSG values are used. MSG = 2 2 2 |S21| , K = 1 + | ∆ | - |S11| - |S22| , ∆ = S11 S22 - S21 S12 |S12| 2 |S12 S21| MAG = Maximum Available Gain MSG = Maximum Stable Gain EXCLUSIVE NORTH AMERICAN AGENT FOR RF, MICROWAVE & OPTOELECTRONIC SEMICONDUCTORS CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • Internet: http://WWW.CEL.COM 01/14/2000 DATA SUBJECT TO CHANGE WITHOUT NOTICE