TriQuint AGR18060E 60 w, 1805 mhz-1880 mhz, ldmos rf power transistor Datasheet

AGR18060E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Introduction
Table 1. Thermal Characteristics
The AGR18060E is a 60 W, 26 V N-channel laterally
diffused metal oxide semiconductor (LDMOS)
RF power field effect transistor (FET) suitable for
enhanced data for global evolution (EDGE), global
system for mobile communication (GSM), and singlecarrier or multicarrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output
power of 60 W, which makes it ideally suited for
today’s wireless base station RF power amplifier
applications.
AGR18060EU
AGR18060EF
Figure 1. Available Packages
Features
Typical EDGE performance:
1880 MHz, 26 V, IDQ = 500 mA
— Output power (POUT): 20 W.
— Power gain: 15 dB.
— Efficiency: 34%.
— Modulation spectrum:
@ ±400 kHz = –62 dBc.
@ ±600 kHz = –73 dBc.
— Error vector magnitude (EVM) = 2%.
Typical performance over entire GSM band:
— P1dB: 60 W typ.
— Power gain: @ P1dB = 14 dB.
— Efficiency @ P1dB = 52% typical.
— Return loss: –10 dB.
High-reliability, gold-metalization process.
Low hot carrier injection (HCI) induced bias drift
over 20 years.
Internally matched.
High gain, efficiency, and linearity.
Integrated ESD protection.
Device can withstand 10:1 voltage standing wave
ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continuous wave (CW) output power.
Large signal impedance parameters available.
Parameter
Thermal Resistance,
Junction to Case:
AGR18060EU
AGR18060EF
Sym
Value
Unit
Rı JC
Rı JC
1.00
1.00
°C/W
°C/W
Table 2. Absolute Maximum Ratings*
Parameter
Drain-source Voltage
Gate-source Voltage
Total Dissipation at TC = 25 °C:
AGR18060EU
AGR18060EF
Derate Above 25 ˇC:
AGR18060EU
AGR18060EF
Operating Junction Temperature
Storage Temperature Range
Sym Value Unit
VDSS
65
Vdc
VGS –0.5, 15 Vdc
PD
PD
175
175
W
W
—
—
TJ
1.00
1.00
200
W/°C
W/°C
°C
TSTG –65, 150
°C
* Stresses in excess of the absolute maximum ratings can cause
permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at
these or any other conditions in excess of those given in the
operational sections of the data sheet. Exposure to absolute
maximum ratings for extended periods can adversely affect
device reliability.
Table 3. ESD Rating*
AGR18060E
HBM
MM
CDM
Minimum (V)
500
50
1500
Class
1B
A
4
* Although electrostatic discharge (ESD) protection circuitry has
been designed into this device, proper precautions must be
taken to avoid exposure to ESD and electrical overstress (EOS)
during all handling, assembly, and test operations. PEAK
Agere Devices
employs both a human-body model (HBM) and a charged-device
model (CDM) qualification requirement in order to determine
ESD-susceptibility limits and protection design evaluation. ESD
voltage thresholds are dependent on the circuit parameters used
in each of the models, as defined by JEDEC's JESD22-A114
(HBM) and JESD22-C101 (CDM) standards.
Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be
observed.
AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Electrical Characteristics
Recommended operating conditions apply unless otherwise specified: TC = 30 °C.
Table 4. dc Characteristics
Parameter
Off Characteristics
= 90
300µA
µA)
Drain-source Breakdown Voltage (VGS = 0 V, ID =
Gate-source Leakage Current (VGS = 5 V, VDS = 0 V)
Symbol
Min
Typ
Max
Un i t
V(BR)DSS
65
—
—
Vdc
IDSS
—
IGSS
Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V)
On Characteristics
Forward Transconductance (VDS = 10 V, ID = 0.45 A)
—
—
GFS
VGS(Q)
Gate Threshold Voltage (VDS = 10 V, ID = 180 µA)
VGS(th)
Drain-source On-voltage (VGS = 10 V, ID = 0.45 A)
VDS(on)
Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA)
—
1.8
5.5
100
µAdc
—
4.0
—
S
—
3.6
—
—
µAdc
—
4.8
Vdc
0.08
—
Vdc
Typ
Max
Un i t
1.3
—
pF
—
Vdc
Table 5. RF Characteristics
Parameter
Symbol
Min
Dynamic Characteristics
CRSS
—
Transfer Capacitance
(VDS = 26 V, VGS = 0, f = 1 MHz)
(Part is internally matched both on input and output.)
(in Supplied
Test Fixture)
Functional Tests (in
Agere Systems
Supplied Test Fixture)
GPS
—
15
—
dB
η
—
41
—
%
Third-order Intermodulation Distortion*
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
IM3
—
–26
—
dBc
IRL
—
–10
—
dB
Output Power at 1 dB Gain Compression
(VDD = 26 V, POUT = 60 W CW, f = 1880 MHz, IDQ = 500 mA)
P1dB
—
60
—
W
Two-Tone Common-source Amplifier Power Gain
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Two-Tone Drain Efficiency
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Input Return Loss
(VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz
and 1880 MHz, tone spacing = 100 kHz)
Ruggedness
(VDD = 26 V, POUT = 60 W CW, IDQ = 500 mA, f = 1880 MHz,
VSWR = 10:1 [all phase angles])
Ψ
No degradation in output
power.
AG R180 60E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Test Circuit Illustrations for AGR18060E
R3
VGG
C2
R2
C1
Z1
RF INPUT
C12
Z2
VDD
FB1
R1
C4
Z3
C13 C14
Z4
C3
Z6
1
Z5
Z15
Z72
C7
Z8
3
C5
C8
Z9
Z10
PINS
1. DRAIN
2. GATE
3. SOURCE
DUT
C10
C9
Z11
Z12
Z13 C11 Z14
RF
OUTPUT
A. Schematic
Gate
C2
R2
R1
R3
C12 C13 C14
Gnd
Drain
W1
C3
FB1
C7
C8
C6
C9
C10
C1
S2
C4
2
S3
3
S4
1
C11
C5
S1
B. Component Layout
Parts List:
Microstrip line: Z1 0.065 in. x 0.283 in.; Z2 0.065 in. x 0.700 in.; Z3 0.065 in. x 0.308 in.; Z4 0.856 in.x 0.262 in.; Z5 1.045 in. x 0.140 in.;
Z6 0.051 in. x 0.470 in.; Z7 1.220 in. x 0.104 in.; Z8 0.998 in. x 0.422 in.; Z9 0.132 in. x 0.050 in.; Z10 0.984 in. x 0.093 in.;
Z11 0.132 in. x 0.244 in.; Z12 0.289 in. x 0.332 in.; Z13 0.132 in. x 0.200 in.; Z14 0.065 in. x 0.250 in.
ATC ® B case chip capacitors: C3, C4: 10 pF, 100B100JCA500X; C11 8.2 pF 100B8R2JCA500X; C7 1000 pF, 100B102JCA500X.
Kemet® B case chip capacitors: C9, C12: 0.10 µF, CDR33BX104AKWS.
Johanson Giga-Trim ® variable capacitors: C5, C17: 0.4 pF—2.5 pF.
Vitramon ® 1206: C2, C8: 22000 pF.
Murata ® 0805: C13 0.01 µF, GRM40X7R103K100AL.
0603: C14 220 pF.
Fair-Rite ® ferrite bead: FB1, #2743019447.
Sprague ® tantalum, SMT: C1, C10: 22 µF, 35 V.
Fixed film chip resistors: R1 510 Ω, 1/4 W, 0.08 x 0.13; R2 560 kΩ, 1/4 W, 0.08 x 0.13; R3 4.7 Ω, 1/4 W, 0.08 x 0.13.
PCB etched circuit boards.
Taconic ® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5.
Figure 2. AGR18060E Test Circuit Schematic
AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
IN D
90
0.6
0.0 Ð > W A V EL E
N GTH
S TOW
A RD
0.0
0.49
0.48
± 180
170
0.
8
10
0.1
0.4
20
50
20
10
5.0
4.0
3.0
1.8
2.0
1.6
1.4
1.2
50
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.2
0.2
20
)
/ Yo
(-jB
CE
1.
0
AN
PT
CE
US
ES
0
1.0
5
0.14
-80
0.11
-100
-90
0.12
0.13
0.38
0.37
0.1
9
0.0
IV
CT
DU
IN
,O
o)
R
-75
-70
40
-1
(-j
5
0.
07
30
-1
43
0.
8
0.0
2
0.4
.41
0
0.4
0.39
F
0.36
-110
0
-12
T
0.
2.
1.8
1.6
0.15
0.35
0.9
1.2
1.4
0.7
0
-4
-4
4
-70
0
6
-5
5
-3
0.1
0.3
0.8
3
-60
5
0.3
7
-5
0.1
VE
-60
32
CA P
AC
I TI
0.6
0.2
-30
CE
CO
M
-65
18
0.
RE
AC
TA
N
EN
06
Z
X/
0
-5
-25
0.
PO
N
0.
0.4
31
0.
19
0.
4
0.
0
4
0.6
0
-20
5
0.8
3.
0.3
0.0
0
1.
4.0
0.2
4
0.
f1
ZS
0.2
8
f3
0.2
2
0.3
-4
5
0.4
8
0.
0.2
9
0.2
1
-30
6
0.4
4
0.0
0
-15 -80
0.6
-15
0.2
0.4
5.0
-85
ZL
f1
-10
0.48
f3
10
0.1
-20
D L OA D <
OW A R
7
HST
0.4
N GT
-170
EL E
V
WA
<Ð
-90
-160
Ð
RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo)
50
0.49
0.25
0.2
6
0.24
0.27
0.23
0.25
0.24
0.26
0.23
0.27
REFL ECTI ON COEFFI CI EN T I N D EG
REES
L E OF
ANG
I SSI ON COEFFI CI EN T I N
TRA N SM
D EGR
EES
L E OF
ANG
Z0 = 10 Ω
U CT
Typical Performance Characteristics
MHz (f)
1805 (f1)
1842.5 (f2)
1880 (f3)
Note:
ZL Ω
(Complex Optimum Load Impedance)
4.65 – j2.50
4.23 – j2.44
3.84 – j2.40
ZS Ω
(Complex Source Impedance)
1.76 – j4.18
1.78 – j3.78
1.78 – j3.65
ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion.
GATE (2)
ZS
DRAIN (1)
ZL
SOURCE (3)
INPUT MATCH
DUT
OUTPUT MATCH
Figure 3. Series Equivalent Input and Output Impedances
AG R180 60E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
80.00
70.00
60.00
50.00
40.00
30.00
20.00
10.00
0.00
0.00
0.0
POUT
-5.0
EFFICIENCY
0.50
1.00
1.50
2.00
2.50
-10.0
IRL
3.00
3.50
4.00
-15.0
-20.0
4.50
IRL, INPUT RETURNZ
LOSSZ(dB)Z
POUT, OUTPUT
POWERZ(WATTS),
EFFICIENCYZ(%)Z
Typical Performance Characteristics (continued)
PIN, INPUT POWER (WATTS)Z
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
GPS, POWER GAIN (dB)Z
Figure 4. Output Power and Efficiency Versus Input Power
16
IDQ = 700 mA
15
IDQ = 500 mA
IDQ = 300 mA
14
13
12
1
10
POUT, OUTPUT POWER (WATTS)Z
100
VDD = 26 V, FREQUENCY = 1842.5 MHz, CW MEASUREMENT.
16
15
GPS
14
13
-15
11
10
1760
1780
1800
1820
1840
-5
-10
IRL
12
0
1860
1880
f, FREQUENCY (MHz)Z
VDD = 26 V, IDQ = 500 mA, PIN = 25 dBm, CW MEASUREMENT.
Figure 6. Gain and IRL Versus Signal Frequency
-20
1900
IRL, INPUTZ
RETURNZLOSS
(dB)ZZ
GPS, POWER GAINZZ
(dB)Z
Figure 5. Power Gain Versus Output Power
AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
50
40
30
-10
IRL
-20
IM3
20
10
0
1760
0
EFFICIENCY
-30
-40
GPS
1780
1800
1820
1840
1860
1880
-50
1900
IRL, INPUT RETURN LOSSZ
(dB), IM3,Z
INTERMODULATIONZ
DISTORTION (dBc)Z
GPS, POWER GAIN (dB),Z
DRAIN EFFICIENCY(%)Z
Typical Performance Characteristics (continued)
f, FREQUENCY (MHz)Z
VDD = 26 V, IDQ = 500 mA, POUT = 60 W (PEP), TWO-TONE MEASUREMENT, 100 kHz SPACING.
IM3, INTERMODULATION DISTORTION (dBc)
Z
Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency
0.0
-10.0
-20.0
-30.0
-40.0
-50.0
-60.0
-70.0
1.00
IDQ = 300 mA
IDQ = 500 mA
IDQ = 900 mA
IDQ = 700 mA
10.00
100.00
POUT, OUTPUT POWER (WATTS) PEPZ
VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Figure 8. Intermodulation Distortion Versus Output Power
AG R180 60E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
GPS, POWER GAIN (dB)Z
17.00
16.00
15.00
14.00
IDQ = 900 mA
IDQ = 700 mA
IDQ = 500 mA
IDQ = 300 mA
13.00
12.00
1.00
10.00
100.00
POUT, OUTPUT POWER (WATTS) PEP
VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING.
Z
IMD, INTERMODULATION DISTORTION (dBc)
Figure 9. Power Gain Versus Output Power
-10.0
-20.0
THIRD ORDER
-30.0
FIFTH ORDER
-40.0
-50.0
-60.0
SEVENTH ORDER
-70.0
10.00
100.00
P OUT, OUTPUT POWER (WATTS) PEPZ
VDD = 26 V, FREQUENCY = 1842.5 MHz, IDQ = 700 mA, TWO-TONES, 100 kHz SPACING.
Figure 10. Intermodulation Products Versus Output Power
AGR 18060 E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Typical Performance Characteristics (continued)
0.0
45.00
-10.0
IRL
40.00
-20.0
35.00
EFFICIENCY
30.00
25.00
-30.0
-40.0
400 kHz
20.00
-50.0
-60.0
15.00
10.00
GPS
600 kHz
5.00
-70.0
-80.0
0.00
1.00
-90.0
100.00
10.00
IRL, INPUT RETURN LOSS (dB),Z
SPECTRAL REGROWTH (dBc)Z
GPS, POWER GAIN (dB),Z
DRAIN EFFICIENCY (%)Z
50.00
P OUT, OUTPUT POWER (WATTS)Z
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
50.00
10
45.00
9
40.00
8
EFFICIENCY
35.00
7
30.00
6
25.00
5
20.00
4
GPS
15.00
10.00
3
2
EVM
5.00
0.00
0.00
5.00
1
10.00
15.00
20.00
25.00
30.00
35.00
0
40.00
P OUT, OUTPUT POWER (WATTS)Z
VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION.
Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power
EVM, ERROR VECTOR MAGNITUDEZ
RMS (%)Z
GPS, POWER GAIN (dB),Z
DRAIN EFFICIENCY (%)Z
Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage
AG R180 60E
60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor
Package Dimensions
All dimensions are in inches. Tolerances are ±0.005 in. unless specified.
AGR18060EU
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
1
PEAK DEVICES
AGR18060EU
3
XXXX
2
2
AGR18060EF
PINS:
1. DRAIN
2. GATE
3. SOURCE
1
PEAK DEVICES
AGR18060EF
XXXX
2
XXXX = 4 Digit Trace Code
1
3
3
2
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