AGR18060E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Introduction Table 1. Thermal Characteristics The AGR18060E is a 60 W, 26 V N-channel laterally diffused metal oxide semiconductor (LDMOS) RF power field effect transistor (FET) suitable for enhanced data for global evolution (EDGE), global system for mobile communication (GSM), and singlecarrier or multicarrier class AB power amplifier applications. It is packaged in an industry-standard package and is capable of delivering a minimum output power of 60 W, which makes it ideally suited for today’s wireless base station RF power amplifier applications. AGR18060EU AGR18060EF Figure 1. Available Packages Features Typical EDGE performance: 1880 MHz, 26 V, IDQ = 500 mA — Output power (POUT): 20 W. — Power gain: 15 dB. — Efficiency: 34%. — Modulation spectrum: @ ±400 kHz = –62 dBc. @ ±600 kHz = –73 dBc. — Error vector magnitude (EVM) = 2%. Typical performance over entire GSM band: — P1dB: 60 W typ. — Power gain: @ P1dB = 14 dB. — Efficiency @ P1dB = 52% typical. — Return loss: –10 dB. High-reliability, gold-metalization process. Low hot carrier injection (HCI) induced bias drift over 20 years. Internally matched. High gain, efficiency, and linearity. Integrated ESD protection. Device can withstand 10:1 voltage standing wave ratio (VSWR) at 26 Vdc, 1805 MHz, 60 W continuous wave (CW) output power. Large signal impedance parameters available. Parameter Thermal Resistance, Junction to Case: AGR18060EU AGR18060EF Sym Value Unit Rı JC Rı JC 1.00 1.00 °C/W °C/W Table 2. Absolute Maximum Ratings* Parameter Drain-source Voltage Gate-source Voltage Total Dissipation at TC = 25 °C: AGR18060EU AGR18060EF Derate Above 25 ˇC: AGR18060EU AGR18060EF Operating Junction Temperature Storage Temperature Range Sym Value Unit VDSS 65 Vdc VGS –0.5, 15 Vdc PD PD 175 175 W W — — TJ 1.00 1.00 200 W/°C W/°C °C TSTG –65, 150 °C * Stresses in excess of the absolute maximum ratings can cause permanent damage to the device. These are absolute stress ratings only. Functional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of the data sheet. Exposure to absolute maximum ratings for extended periods can adversely affect device reliability. Table 3. ESD Rating* AGR18060E HBM MM CDM Minimum (V) 500 50 1500 Class 1B A 4 * Although electrostatic discharge (ESD) protection circuitry has been designed into this device, proper precautions must be taken to avoid exposure to ESD and electrical overstress (EOS) during all handling, assembly, and test operations. PEAK Agere Devices employs both a human-body model (HBM) and a charged-device model (CDM) qualification requirement in order to determine ESD-susceptibility limits and protection design evaluation. ESD voltage thresholds are dependent on the circuit parameters used in each of the models, as defined by JEDEC's JESD22-A114 (HBM) and JESD22-C101 (CDM) standards. Caution: MOS devices are susceptible to damage from electrostatic charge. Reasonable precautions in handling and packaging MOS devices should be observed. AGR 18060 E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Electrical Characteristics Recommended operating conditions apply unless otherwise specified: TC = 30 °C. Table 4. dc Characteristics Parameter Off Characteristics = 90 300µA µA) Drain-source Breakdown Voltage (VGS = 0 V, ID = Gate-source Leakage Current (VGS = 5 V, VDS = 0 V) Symbol Min Typ Max Un i t V(BR)DSS 65 — — Vdc IDSS — IGSS Zero Gate Voltage Drain Leakage Current (VDS = 26 V, VGS = 0 V) On Characteristics Forward Transconductance (VDS = 10 V, ID = 0.45 A) — — GFS VGS(Q) Gate Threshold Voltage (VDS = 10 V, ID = 180 µA) VGS(th) Drain-source On-voltage (VGS = 10 V, ID = 0.45 A) VDS(on) Gate Quiescent Voltage (VDS = 26 V, ID = 500 mA) — 1.8 5.5 100 µAdc — 4.0 — S — 3.6 — — µAdc — 4.8 Vdc 0.08 — Vdc Typ Max Un i t 1.3 — pF — Vdc Table 5. RF Characteristics Parameter Symbol Min Dynamic Characteristics CRSS — Transfer Capacitance (VDS = 26 V, VGS = 0, f = 1 MHz) (Part is internally matched both on input and output.) (in Supplied Test Fixture) Functional Tests (in Agere Systems Supplied Test Fixture) GPS — 15 — dB η — 41 — % Third-order Intermodulation Distortion* (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) IM3 — –26 — dBc IRL — –10 — dB Output Power at 1 dB Gain Compression (VDD = 26 V, POUT = 60 W CW, f = 1880 MHz, IDQ = 500 mA) P1dB — 60 — W Two-Tone Common-source Amplifier Power Gain (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Two-Tone Drain Efficiency (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Input Return Loss (VDD = 26 Vdc, POUT = 60 W PEP, IDQ = 500 mA, f = 1805 MHz and 1880 MHz, tone spacing = 100 kHz) Ruggedness (VDD = 26 V, POUT = 60 W CW, IDQ = 500 mA, f = 1880 MHz, VSWR = 10:1 [all phase angles]) Ψ No degradation in output power. AG R180 60E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Test Circuit Illustrations for AGR18060E R3 VGG C2 R2 C1 Z1 RF INPUT C12 Z2 VDD FB1 R1 C4 Z3 C13 C14 Z4 C3 Z6 1 Z5 Z15 Z72 C7 Z8 3 C5 C8 Z9 Z10 PINS 1. DRAIN 2. GATE 3. SOURCE DUT C10 C9 Z11 Z12 Z13 C11 Z14 RF OUTPUT A. Schematic Gate C2 R2 R1 R3 C12 C13 C14 Gnd Drain W1 C3 FB1 C7 C8 C6 C9 C10 C1 S2 C4 2 S3 3 S4 1 C11 C5 S1 B. Component Layout Parts List: Microstrip line: Z1 0.065 in. x 0.283 in.; Z2 0.065 in. x 0.700 in.; Z3 0.065 in. x 0.308 in.; Z4 0.856 in.x 0.262 in.; Z5 1.045 in. x 0.140 in.; Z6 0.051 in. x 0.470 in.; Z7 1.220 in. x 0.104 in.; Z8 0.998 in. x 0.422 in.; Z9 0.132 in. x 0.050 in.; Z10 0.984 in. x 0.093 in.; Z11 0.132 in. x 0.244 in.; Z12 0.289 in. x 0.332 in.; Z13 0.132 in. x 0.200 in.; Z14 0.065 in. x 0.250 in. ATC ® B case chip capacitors: C3, C4: 10 pF, 100B100JCA500X; C11 8.2 pF 100B8R2JCA500X; C7 1000 pF, 100B102JCA500X. Kemet® B case chip capacitors: C9, C12: 0.10 µF, CDR33BX104AKWS. Johanson Giga-Trim ® variable capacitors: C5, C17: 0.4 pF—2.5 pF. Vitramon ® 1206: C2, C8: 22000 pF. Murata ® 0805: C13 0.01 µF, GRM40X7R103K100AL. 0603: C14 220 pF. Fair-Rite ® ferrite bead: FB1, #2743019447. Sprague ® tantalum, SMT: C1, C10: 22 µF, 35 V. Fixed film chip resistors: R1 510 Ω, 1/4 W, 0.08 x 0.13; R2 560 kΩ, 1/4 W, 0.08 x 0.13; R3 4.7 Ω, 1/4 W, 0.08 x 0.13. PCB etched circuit boards. Taconic ® ORCER RF-35: board material, 1 oz. copper, 30 mil thickness, εr = 3.5. Figure 2. AGR18060E Test Circuit Schematic AGR 18060 E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor IN D 90 0.6 0.0 Ð > W A V EL E N GTH S TOW A RD 0.0 0.49 0.48 ± 180 170 0. 8 10 0.1 0.4 20 50 20 10 5.0 4.0 3.0 1.8 2.0 1.6 1.4 1.2 50 1.0 0.9 0.8 0.7 0.6 0.5 0.4 0.3 0.2 0.1 0.2 0.2 20 ) / Yo (-jB CE 1. 0 AN PT CE US ES 0 1.0 5 0.14 -80 0.11 -100 -90 0.12 0.13 0.38 0.37 0.1 9 0.0 IV CT DU IN ,O o) R -75 -70 40 -1 (-j 5 0. 07 30 -1 43 0. 8 0.0 2 0.4 .41 0 0.4 0.39 F 0.36 -110 0 -12 T 0. 2. 1.8 1.6 0.15 0.35 0.9 1.2 1.4 0.7 0 -4 -4 4 -70 0 6 -5 5 -3 0.1 0.3 0.8 3 -60 5 0.3 7 -5 0.1 VE -60 32 CA P AC I TI 0.6 0.2 -30 CE CO M -65 18 0. RE AC TA N EN 06 Z X/ 0 -5 -25 0. PO N 0. 0.4 31 0. 19 0. 4 0. 0 4 0.6 0 -20 5 0.8 3. 0.3 0.0 0 1. 4.0 0.2 4 0. f1 ZS 0.2 8 f3 0.2 2 0.3 -4 5 0.4 8 0. 0.2 9 0.2 1 -30 6 0.4 4 0.0 0 -15 -80 0.6 -15 0.2 0.4 5.0 -85 ZL f1 -10 0.48 f3 10 0.1 -20 D L OA D < OW A R 7 HST 0.4 N GT -170 EL E V WA <Ð -90 -160 Ð RESISTANCE COMPONENT (R/Zo), OR CONDUCTANCE COMPONENT (G/Yo) 50 0.49 0.25 0.2 6 0.24 0.27 0.23 0.25 0.24 0.26 0.23 0.27 REFL ECTI ON COEFFI CI EN T I N D EG REES L E OF ANG I SSI ON COEFFI CI EN T I N TRA N SM D EGR EES L E OF ANG Z0 = 10 Ω U CT Typical Performance Characteristics MHz (f) 1805 (f1) 1842.5 (f2) 1880 (f3) Note: ZL Ω (Complex Optimum Load Impedance) 4.65 – j2.50 4.23 – j2.44 3.84 – j2.40 ZS Ω (Complex Source Impedance) 1.76 – j4.18 1.78 – j3.78 1.78 – j3.65 ZL was chosen based on trade-offs between gain, output power, drain efficiency, and intermodulation distortion. GATE (2) ZS DRAIN (1) ZL SOURCE (3) INPUT MATCH DUT OUTPUT MATCH Figure 3. Series Equivalent Input and Output Impedances AG R180 60E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor 80.00 70.00 60.00 50.00 40.00 30.00 20.00 10.00 0.00 0.00 0.0 POUT -5.0 EFFICIENCY 0.50 1.00 1.50 2.00 2.50 -10.0 IRL 3.00 3.50 4.00 -15.0 -20.0 4.50 IRL, INPUT RETURNZ LOSSZ(dB)Z POUT, OUTPUT POWERZ(WATTS), EFFICIENCYZ(%)Z Typical Performance Characteristics (continued) PIN, INPUT POWER (WATTS)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, CW MEASUREMENT. GPS, POWER GAIN (dB)Z Figure 4. Output Power and Efficiency Versus Input Power 16 IDQ = 700 mA 15 IDQ = 500 mA IDQ = 300 mA 14 13 12 1 10 POUT, OUTPUT POWER (WATTS)Z 100 VDD = 26 V, FREQUENCY = 1842.5 MHz, CW MEASUREMENT. 16 15 GPS 14 13 -15 11 10 1760 1780 1800 1820 1840 -5 -10 IRL 12 0 1860 1880 f, FREQUENCY (MHz)Z VDD = 26 V, IDQ = 500 mA, PIN = 25 dBm, CW MEASUREMENT. Figure 6. Gain and IRL Versus Signal Frequency -20 1900 IRL, INPUTZ RETURNZLOSS (dB)ZZ GPS, POWER GAINZZ (dB)Z Figure 5. Power Gain Versus Output Power AGR 18060 E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor 50 40 30 -10 IRL -20 IM3 20 10 0 1760 0 EFFICIENCY -30 -40 GPS 1780 1800 1820 1840 1860 1880 -50 1900 IRL, INPUT RETURN LOSSZ (dB), IM3,Z INTERMODULATIONZ DISTORTION (dBc)Z GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY(%)Z Typical Performance Characteristics (continued) f, FREQUENCY (MHz)Z VDD = 26 V, IDQ = 500 mA, POUT = 60 W (PEP), TWO-TONE MEASUREMENT, 100 kHz SPACING. IM3, INTERMODULATION DISTORTION (dBc) Z Figure 7. Gain, Efficiency, IRL, Versus Signal Frequency 0.0 -10.0 -20.0 -30.0 -40.0 -50.0 -60.0 -70.0 1.00 IDQ = 300 mA IDQ = 500 mA IDQ = 900 mA IDQ = 700 mA 10.00 100.00 POUT, OUTPUT POWER (WATTS) PEPZ VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Figure 8. Intermodulation Distortion Versus Output Power AG R180 60E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) GPS, POWER GAIN (dB)Z 17.00 16.00 15.00 14.00 IDQ = 900 mA IDQ = 700 mA IDQ = 500 mA IDQ = 300 mA 13.00 12.00 1.00 10.00 100.00 POUT, OUTPUT POWER (WATTS) PEP VDD = 26 V, FREQUENCY = 1842.5 MHz, TWO-TONE MEASUREMENT, 100 kHz SPACING. Z IMD, INTERMODULATION DISTORTION (dBc) Figure 9. Power Gain Versus Output Power -10.0 -20.0 THIRD ORDER -30.0 FIFTH ORDER -40.0 -50.0 -60.0 SEVENTH ORDER -70.0 10.00 100.00 P OUT, OUTPUT POWER (WATTS) PEPZ VDD = 26 V, FREQUENCY = 1842.5 MHz, IDQ = 700 mA, TWO-TONES, 100 kHz SPACING. Figure 10. Intermodulation Products Versus Output Power AGR 18060 E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Typical Performance Characteristics (continued) 0.0 45.00 -10.0 IRL 40.00 -20.0 35.00 EFFICIENCY 30.00 25.00 -30.0 -40.0 400 kHz 20.00 -50.0 -60.0 15.00 10.00 GPS 600 kHz 5.00 -70.0 -80.0 0.00 1.00 -90.0 100.00 10.00 IRL, INPUT RETURN LOSS (dB),Z SPECTRAL REGROWTH (dBc)Z GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY (%)Z 50.00 P OUT, OUTPUT POWER (WATTS)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION. 50.00 10 45.00 9 40.00 8 EFFICIENCY 35.00 7 30.00 6 25.00 5 20.00 4 GPS 15.00 10.00 3 2 EVM 5.00 0.00 0.00 5.00 1 10.00 15.00 20.00 25.00 30.00 35.00 0 40.00 P OUT, OUTPUT POWER (WATTS)Z VDD = 26 V, IDQ = 500 mA, FREQUENCY = 1842.5 MHz, EDGE MODULATION. Figure 12. Gain, Efficiency, IRL, and Spectral Regrowth Versus Output Power EVM, ERROR VECTOR MAGNITUDEZ RMS (%)Z GPS, POWER GAIN (dB),Z DRAIN EFFICIENCY (%)Z Figure 11. Power Gain, IRL, IMD, and Efficiency Versus Supply Voltage AG R180 60E 60 W, 1805 MHz—1880 MHz, LDMOS RF Power Transistor Package Dimensions All dimensions are in inches. Tolerances are ±0.005 in. unless specified. AGR18060EU PINS: 1. DRAIN 2. GATE 3. SOURCE 1 1 PEAK DEVICES AGR18060EU 3 XXXX 2 2 AGR18060EF PINS: 1. DRAIN 2. GATE 3. SOURCE 1 PEAK DEVICES AGR18060EF XXXX 2 XXXX = 4 Digit Trace Code 1 3 3 2