UniFET-IITM FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET 500V, 7A, 1Ω Features Description • RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A This N-Channel enhancement mode power field effect transistors are produced using Fairchild's proprietary, planar stripe, DMOS technology. • Low Gate Charge ( Typ. 14nC) • Low Crss ( Typ. 5pF) This advance technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices are well suited for high efficient switching mode power supplies and active power factor correction. • Fast Switching • 100% Avalanche Tested • Improve dv/dt Capability • ESD Improved Capability • RoHS Compliant D G G D S TO-220 FDP Series TO-220F FDPF Series (potted) GDS S MOSFET Maximum Ratings TC = 25 C unless otherwise noted o Symbol VDSS Drain to Source Voltage Parameter VGSS Gate to Source Voltage FDP8N50NZF FDPF8N50NZF 500 Units V ±25 V -Continuous (TC = 25oC) 7 7* 4.2 4.2* ID Drain Current -Continuous (TC = 100oC) - Pulsed (Note 1) IDM Drain Current EAS Single Pulsed Avalanche Energy IAR Avalanche Current (Note 1) 7 A EAR Repetitive Avalanche Energy (Note 1) 13 mJ dv/dt Peak Diode Recovery dv/dt 28* (Note 2) Power Dissipation TJ, TSTG Operating and Storage Temperature Range Maximum Lead Temperature for Soldering Purpose, 1/8” from Case for 5 Seconds - Derate above 25oC A 93 (Note 3) (TC = 25oC) PD TL 28 A mJ 20 V/ns 130 40 W 1 0.32 W/oC -55 to +150 o C 300 o C *Drain current limited by maximum junction temperature Thermal Characteristics Symbol Parameter FDP8N50NZF FDPF8N50NZF Units RθJC Thermal Resistance, Junction to Case 0.96 3.1 RθCS Thermal Resistance, Case to Sink Typ. 0.5 - RθJA Thermal Resistance, Junction to Ambient 62.5 62.5 ©2012 Fairchild Semiconductor Corporation FDP8N50NZF / FDPF8N50NZF Rev. C0 1 o C/W www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET February 2012 Device Marking FDP8N50NZF Device FDP8N50NZF Package TO-220 Reel Size - Tape Width - Quantity 50 FDPF8N50NF FDPF8N50NZF TO-220F - - 50 Electrical Characteristics TC = 25oC unless otherwise noted Symbol Parameter Test Conditions Min. Typ. Max. Units 500 - - V - 0.5 - V/oC μA Off Characteristics BVDSS ΔBVDSS ΔTJ Drain to Source Breakdown Voltage Breakdown Voltage Temperature Coefficient ID = 250μA, VGS = 0V, TC = 25oC IDSS Zero Gate Voltage Drain Current VDS = 500V, VGS = 0V - - 10 VDS = 400V, TC = 125oC - - 100 IGSS Gate to Body Leakage Current VGS = ±25V, VDS = 0V - - ±10 3.0 - 5.0 V - 0.85 1 Ω - 6.3 - S - 565 735 pF - 80 105 pF ID = 250μA, Referenced to 25oC μA On Characteristics VGS(th) RDS(on) Gate Threshold Voltage VGS = VDS, ID = 250μA Static Drain to Source On Resistance VGS = 10V, ID = 3.5A gFS Forward Transconductance VDS = 20V, ID = 3.5A (Note 4) Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Qg(tot) Total Gate Charge at 10V Qgs Gate to Source Gate Charge Qgd Gate to Drain “Miller” Charge VDS = 25V, VGS = 0V f = 1MHz VDS = 400V,ID = 7A VGS = 10V (Note 4, 5) - 5 8 pF - 14 18 nC - 4 - nC - 6 - nC - 17 45 ns - 34 80 ns - 43 95 ns - 27 60 ns Switching Characteristics td(on) Turn-On Delay Time tr Turn-On Rise Time td(off) Turn-Off Delay Time tf Turn-Off Fall Time VDD = 250V, ID =7A RG = 25Ω, VGS = 10V (Note 4, 5) Drain-Source Diode Characteristics IS Maximum Continuous Drain to Source Diode Forward Current - - 7 A ISM Maximum Pulsed Drain to Source Diode Forward Current - - 28 A VSD Drain to Source Diode Forward Voltage VGS = 0V, ISD = 7A - - 1.5 V trr Reverse Recovery Time 80 - ns Qrr Reverse Recovery Charge VGS = 0V, ISD = 7A dIF/dt = 100A/μs - 0.3 - μC (Note 4) Notes: 1. Repetitive Rating: Pulse width limited by maximum junction temperature 2. L = 3.8mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C 3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C 4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2% 5. Essentially Independent of Operating Temperature Typical Characteristics FDP8N50NZF / FDPF8N50NZF Rev. C0 2 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Package Marking and Ordering Information Figure 1. On-Region Characteristics 30 VGS = 15.0 V 10.0 V 8.0 V 7.0 V 6.5 V 6.0 V 5.5 V 10 ID, Drain Current[A] ID, Drain Current[A] 10 Figure 2. Transfer Characteristics 30 1 0.1 o 150 C o -55 C o 25 C 1 *Notes: 1. 250μs Pulse Test *Notes: 1. VDS = 20V 2. 250μs Pulse Test o 2. TC = 25 C 0.03 0.03 0.1 1 VDS, Drain-Source Voltage[V] 10 0.1 20 2 Figure 3. On-Resistance Variation vs. Drain Current and Gate Voltage 100 IS, Reverse Drain Current [A] 1.6 1.2 VGS = 10V VGS = 20V 0.8 o 150 C o 25 C 10 *Notes: 1. VGS = 0V o *Note: TC = 25 C 0.4 0 3 6 9 12 ID, Drain Current [A] 15 1 0.4 18 Figure 5. Capacitance Characteristics Ciss = Cgs + Cgd (Cds = shorted) Coss = Cds + Cgd Crss = Cgd 900 Ciss 2.4 10 *Note: 1. VGS = 0V 2. f = 1MHz 600 300 Crss VGS, Gate-Source Voltage [V] Coss 2. 250μs Pulse Test 0.8 1.2 1.6 2.0 VSD, Body Diode Forward Voltage [V] Figure 6. Gate Charge Characteristics 1200 Capacitances [pF] 10 Figure 4. Body Diode Forward Voltage Variation vs. Source Current and Temperature 2.0 RDS(ON) [Ω], Drain-Source On-Resistance 4 6 8 VGS, Gate-Source Voltage[V] VDS = 100V VDS = 250V VDS = 400V 8 6 4 2 *Note: ID = 6.5A 0 0.1 1 10 VDS, Drain-Source Voltage [V] FDP8N50NZF / FDPF8N50NZF Rev. C0 0 30 0 3 3 6 9 12 Qg, Total Gate Charge [nC] 15 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Typical Performance Characteristics Figure 7. Breakdown Voltage Variation vs. Temperature Figure 8. Maximum Safe Operating Area - FDPF8N50NZF 100 μs 10 μs 1 10 1 ms 1.1 ID, Drain Current [A] BVDSS, [Normalized] Drain-Source Breakdown Voltage 1.2 1.0 10 ms 100 ms 0 10 Operation in This Area is Limited by R DS(on) -1 10 ? Notes : o 1. TC = 25 C 0.9 o 2. TJ = 150 C 3. Single Pulse *Notes: 1. VGS = 0V 2. ID = 250μA 0.8 -100 DC -50 0 50 100 o TJ, Junction Temperature [ C] -2 10 0 1 10 2 10 10 3 10 VDS, Drain-Source Voltage [V] 150 Figure 9. Maximum Drain Current vs. Case Temperature ID, Drain Current [A] 8 6 4 2 0 25 50 75 100 125 150 TC, Case Temperature [oC ] Figure 11. Transient Thermal Response Curve -FDPF8N50NZF Thermal Response [ZθJC] 5 0.5 1 0.2 0.1 PDM 0.05 0.1 t1 t2 0.02 *Notes: 0.01 o 1. ZθJC(t) = 3.1 C/W Max. 2. Duty Factor, D= t1/t2 3. TJM - TC = PDM * ZθJC(t) Single pulse 0.01 -5 10 FDP8N50NZF / FDPF8N50NZF Rev. C0 -4 10 -3 10 -2 -1 10 10 1 Rectangular Pulse Duration [sec] 4 10 2 10 3 10 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Typical Performance Characteristics (Continued) FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Gate Charge Test Circuit & Waveform Resistive Switching Test Circuit & Waveforms Unclamped Inductive Switching Test Circuit & Waveforms FDP8N50NZF / FDPF8N50NZF Rev. C0 5 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Peak Diode Recovery dv/dt Test Circuit & Waveforms DUT + VDS _ I SD L Driver RG VGS VGS ( Driver ) Same Type as DUT VDD • dv/dt controlled by RG • ISD controlled by pulse period Gate Pulse Width D = -------------------------Gate Pulse Period 10V IFM , Body Diode Forward Current I SD ( DUT ) di/dt IRM Body Diode Reverse Current VDS ( DUT ) Body Diode Recovery dv/dt VDD VSD Body Diode Forward Voltage Drop FDP8N50NZF / FDPF8N50NZF Rev. C0 6 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Mechanical Dimensions TO-220 FDP8N50NZF / FDPF8N50NZF Rev. C0 7 www.fairchildsemi.com FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET Package Dimensions TO-220F * Front/Back Side Isolation Voltage : AC 2500V Dimensions in Millimeters FDP8N50NZF / FDPF8N50NZF Rev. C0 8 www.fairchildsemi.com *Trademarks of System General Corporation, used under license by Fairchild Semiconductor. DISCLAIMER FAIRCHILD SEMICONDUCTOR RESERVES THE RIGHT TO MAKE CHANGES WITHOUT FURTHER NOTICE TO ANY PRODUCTS HEREIN TO IMPROVE RELIABILITY, FUNCTION, OR DESIGN. FAIRCHILD DOES NOT ASSUME ANY LIABILITY ARISING OUT OF THE APPLICATION OR USE OF ANY PRODUCT OR CIRCUIT DESCRIBED HEREIN; NEITHER DOES IT CONVEY ANY LICENSE UNDER ITS PATENT RIGHTS, NOR THE RIGHTS OF OTHERS. THESE SPECIFICATIONS DO NOT EXPAND THE TERMS OF FAIRCHILD’S WORLDWIDE TERMS AND CONDITIONS, SPECIFICALLY THE WARRANTY THEREIN, WHICH COVERS THESE PRODUCTS. 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