Fairchild FDP8N50NZF N-channel mosfet 500v, 7a, 1î© Datasheet

UniFET-IITM
FDP8N50NZF / FDPF8N50NZF
N-Channel MOSFET
500V, 7A, 1Ω
Features
Description
• RDS(on) = 0.85Ω ( Typ.) @ VGS = 10V, ID = 3.25A
This N-Channel enhancement mode power field effect transistors
are produced using Fairchild's proprietary, planar stripe, DMOS
technology.
• Low Gate Charge ( Typ. 14nC)
• Low Crss ( Typ. 5pF)
This advance technology has been especially tailored to
minimize on-state resistance, provide superior switching
performance, and withstand high energy pulse in the avalanche
and commutation mode. These devices are well suited for high
efficient switching mode power supplies and active power factor
correction.
• Fast Switching
• 100% Avalanche Tested
• Improve dv/dt Capability
• ESD Improved Capability
• RoHS Compliant
D
G
G D S
TO-220
FDP Series
TO-220F
FDPF Series
(potted)
GDS
S
MOSFET Maximum Ratings TC = 25 C unless otherwise noted
o
Symbol
VDSS
Drain to Source Voltage
Parameter
VGSS
Gate to Source Voltage
FDP8N50NZF FDPF8N50NZF
500
Units
V
±25
V
-Continuous (TC = 25oC)
7
7*
4.2
4.2*
ID
Drain Current
-Continuous (TC = 100oC)
- Pulsed
(Note 1)
IDM
Drain Current
EAS
Single Pulsed Avalanche Energy
IAR
Avalanche Current
(Note 1)
7
A
EAR
Repetitive Avalanche Energy
(Note 1)
13
mJ
dv/dt
Peak Diode Recovery dv/dt
28*
(Note 2)
Power Dissipation
TJ, TSTG
Operating and Storage Temperature Range
Maximum Lead Temperature for Soldering Purpose,
1/8” from Case for 5 Seconds
- Derate above 25oC
A
93
(Note 3)
(TC = 25oC)
PD
TL
28
A
mJ
20
V/ns
130
40
W
1
0.32
W/oC
-55 to +150
o
C
300
o
C
*Drain current limited by maximum junction temperature
Thermal Characteristics
Symbol
Parameter
FDP8N50NZF
FDPF8N50NZF Units
RθJC
Thermal Resistance, Junction to Case
0.96
3.1
RθCS
Thermal Resistance, Case to Sink Typ.
0.5
-
RθJA
Thermal Resistance, Junction to Ambient
62.5
62.5
©2012 Fairchild Semiconductor Corporation
FDP8N50NZF / FDPF8N50NZF Rev. C0
1
o
C/W
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
February 2012
Device Marking
FDP8N50NZF
Device
FDP8N50NZF
Package
TO-220
Reel Size
-
Tape Width
-
Quantity
50
FDPF8N50NF
FDPF8N50NZF
TO-220F
-
-
50
Electrical Characteristics TC = 25oC unless otherwise noted
Symbol
Parameter
Test Conditions
Min.
Typ.
Max.
Units
500
-
-
V
-
0.5
-
V/oC
μA
Off Characteristics
BVDSS
ΔBVDSS
ΔTJ
Drain to Source Breakdown Voltage
Breakdown Voltage Temperature
Coefficient
ID = 250μA, VGS = 0V, TC = 25oC
IDSS
Zero Gate Voltage Drain Current
VDS = 500V, VGS = 0V
-
-
10
VDS = 400V, TC = 125oC
-
-
100
IGSS
Gate to Body Leakage Current
VGS = ±25V, VDS = 0V
-
-
±10
3.0
-
5.0
V
-
0.85
1
Ω
-
6.3
-
S
-
565
735
pF
-
80
105
pF
ID = 250μA, Referenced to
25oC
μA
On Characteristics
VGS(th)
RDS(on)
Gate Threshold Voltage
VGS = VDS, ID = 250μA
Static Drain to Source On Resistance
VGS = 10V, ID = 3.5A
gFS
Forward Transconductance
VDS = 20V, ID = 3.5A
(Note 4)
Dynamic Characteristics
Ciss
Input Capacitance
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Qg(tot)
Total Gate Charge at 10V
Qgs
Gate to Source Gate Charge
Qgd
Gate to Drain “Miller” Charge
VDS = 25V, VGS = 0V
f = 1MHz
VDS = 400V,ID = 7A
VGS = 10V
(Note 4, 5)
-
5
8
pF
-
14
18
nC
-
4
-
nC
-
6
-
nC
-
17
45
ns
-
34
80
ns
-
43
95
ns
-
27
60
ns
Switching Characteristics
td(on)
Turn-On Delay Time
tr
Turn-On Rise Time
td(off)
Turn-Off Delay Time
tf
Turn-Off Fall Time
VDD = 250V, ID =7A
RG = 25Ω, VGS = 10V
(Note 4, 5)
Drain-Source Diode Characteristics
IS
Maximum Continuous Drain to Source Diode Forward Current
-
-
7
A
ISM
Maximum Pulsed Drain to Source Diode Forward Current
-
-
28
A
VSD
Drain to Source Diode Forward Voltage
VGS = 0V, ISD = 7A
-
-
1.5
V
trr
Reverse Recovery Time
80
-
ns
Qrr
Reverse Recovery Charge
VGS = 0V, ISD = 7A
dIF/dt = 100A/μs
-
0.3
-
μC
(Note 4)
Notes:
1. Repetitive Rating: Pulse width limited by maximum junction temperature
2. L = 3.8mH, IAS = 7A, VDD = 50V, RG = 25Ω, Starting TJ = 25°C
3. ISD ≤ 7A, di/dt ≤ 200A/μs, VDD ≤ BVDSS, Starting TJ = 25°C
4. Pulse Test: Pulse width ≤ 300μs, Duty Cycle ≤ 2%
5. Essentially Independent of Operating Temperature Typical Characteristics
FDP8N50NZF / FDPF8N50NZF Rev. C0
2
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Package Marking and Ordering Information
Figure 1. On-Region Characteristics
30
VGS = 15.0 V
10.0 V
8.0 V
7.0 V
6.5 V
6.0 V
5.5 V
10
ID, Drain Current[A]
ID, Drain Current[A]
10
Figure 2. Transfer Characteristics
30
1
0.1
o
150 C
o
-55 C
o
25 C
1
*Notes:
1. 250μs Pulse Test
*Notes:
1. VDS = 20V
2. 250μs Pulse Test
o
2. TC = 25 C
0.03
0.03
0.1
1
VDS, Drain-Source Voltage[V]
10
0.1
20
2
Figure 3. On-Resistance Variation vs.
Drain Current and Gate Voltage
100
IS, Reverse Drain Current [A]
1.6
1.2
VGS = 10V
VGS = 20V
0.8
o
150 C
o
25 C
10
*Notes:
1. VGS = 0V
o
*Note: TC = 25 C
0.4
0
3
6
9
12
ID, Drain Current [A]
15
1
0.4
18
Figure 5. Capacitance Characteristics
Ciss = Cgs + Cgd (Cds = shorted)
Coss = Cds + Cgd
Crss = Cgd
900
Ciss
2.4
10
*Note:
1. VGS = 0V
2. f = 1MHz
600
300
Crss
VGS, Gate-Source Voltage [V]
Coss
2. 250μs Pulse Test
0.8
1.2
1.6
2.0
VSD, Body Diode Forward Voltage [V]
Figure 6. Gate Charge Characteristics
1200
Capacitances [pF]
10
Figure 4. Body Diode Forward Voltage
Variation vs. Source Current
and Temperature
2.0
RDS(ON) [Ω],
Drain-Source On-Resistance
4
6
8
VGS, Gate-Source Voltage[V]
VDS = 100V
VDS = 250V
VDS = 400V
8
6
4
2
*Note: ID = 6.5A
0
0.1
1
10
VDS, Drain-Source Voltage [V]
FDP8N50NZF / FDPF8N50NZF Rev. C0
0
30
0
3
3
6
9
12
Qg, Total Gate Charge [nC]
15
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Typical Performance Characteristics
Figure 7. Breakdown Voltage Variation
vs. Temperature
Figure 8. Maximum Safe Operating Area
- FDPF8N50NZF
100 μs 10 μs
1
10
1 ms
1.1
ID, Drain Current [A]
BVDSS, [Normalized]
Drain-Source Breakdown Voltage
1.2
1.0
10 ms
100 ms
0
10
Operation in This Area
is Limited by R DS(on)
-1
10
? Notes :
o
1. TC = 25 C
0.9
o
2. TJ = 150 C
3. Single Pulse
*Notes:
1. VGS = 0V
2. ID = 250μA
0.8
-100
DC
-50
0
50
100
o
TJ, Junction Temperature [ C]
-2
10
0
1
10
2
10
10
3
10
VDS, Drain-Source Voltage [V]
150
Figure 9. Maximum Drain Current
vs. Case Temperature
ID, Drain Current [A]
8
6
4
2
0
25
50
75
100
125
150
TC, Case Temperature [oC ]
Figure 11. Transient Thermal Response Curve -FDPF8N50NZF
Thermal Response [ZθJC]
5
0.5
1
0.2
0.1
PDM
0.05
0.1
t1
t2
0.02
*Notes:
0.01
o
1. ZθJC(t) = 3.1 C/W Max.
2. Duty Factor, D= t1/t2
3. TJM - TC = PDM * ZθJC(t)
Single pulse
0.01
-5
10
FDP8N50NZF / FDPF8N50NZF Rev. C0
-4
10
-3
10
-2
-1
10
10
1
Rectangular Pulse Duration [sec]
4
10
2
10
3
10
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FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Typical Performance Characteristics (Continued)
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Gate Charge Test Circuit & Waveform
Resistive Switching Test Circuit & Waveforms
Unclamped Inductive Switching Test Circuit & Waveforms
FDP8N50NZF / FDPF8N50NZF Rev. C0
5
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Peak Diode Recovery dv/dt Test Circuit & Waveforms
DUT
+
VDS
_
I SD
L
Driver
RG
VGS
VGS
( Driver )
Same Type
as DUT
VDD
• dv/dt controlled by RG
• ISD controlled by pulse period
Gate Pulse Width
D = -------------------------Gate Pulse Period
10V
IFM , Body Diode Forward Current
I SD
( DUT )
di/dt
IRM
Body Diode Reverse Current
VDS
( DUT )
Body Diode Recovery dv/dt
VDD
VSD
Body Diode
Forward Voltage Drop
FDP8N50NZF / FDPF8N50NZF Rev. C0
6
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Mechanical Dimensions
TO-220
FDP8N50NZF / FDPF8N50NZF Rev. C0
7
www.fairchildsemi.com
FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
Package Dimensions
TO-220F
* Front/Back Side Isolation Voltage : AC 2500V
Dimensions in Millimeters
FDP8N50NZF / FDPF8N50NZF Rev. C0
8
www.fairchildsemi.com
*Trademarks of System General Corporation, used under license by Fairchild Semiconductor.
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Advance Information
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Datasheet contains the design specifications for product development. Specifications
may change in any manner without notice.
Definition
Preliminary
First Production
Datasheet contains preliminary data; supplementary data will be published at a later
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Datasheet contains final specifications. Fairchild Semiconductor reserves the right to
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Datasheet contains specifications on a product that is discontinued by Fairchild
Semiconductor. The datasheet is for reference information only.
Rev. I61
FDP8N50NZF / FDPF8N50NZF Rev. C0
9
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FDP8N50NZF / FDPF8N50NZF N-Channel MOSFET
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