IRF IRHLG7670Z4 Simple drive requirement Datasheet

PRELIMINARY
PD-97191B
2N7635M1
IRHLG7670Z4
60V, Combination 2N-2P-CHANNEL
RADIATION HARDENED
TECHNOLOGY
LOGIC LEVEL POWER MOSFET
™
THRU-HOLE (MO-036AB)
Product Summary
Part Number
Radiation Level
IRHLG7670Z4
100K Rads (Si)
IRHLG7630Z4
300K Rads (Si)
RDS(on)
ID
0.6Ω
1.25Ω
0.6Ω
1.25Ω
1.07A
-0.71A
1.07A
-0.71A
International Rectifier’s R7TM Logic Level Power
MOSFETs provide simple solution to interfacing
CMOS and TTL control circuits to power devices in
space and other radiation environments. The
threshold voltage remains within acceptable
operating limits over the full operating temperature
and post radiation. This is achieved while maintaining
single event gate rupture and single event burnout
immunity.
These devices are used in applications such as
current boost low signal source in PWM, voltage
comparator and operational amplifiers.
CHANNEL
N
P
N
P
MO-036AB
Features:
n
n
n
n
n
n
n
n
n
5V CMOS and TTL Compatible
Low RDS(on)
Fast Switching
Single Event Effect (SEE) Hardened
Low Total Gate Charge
Simple Drive Requirements
Ease of Paralleling
Hermetically Sealed
Light Weight
Pre-Irradiation
Absolute Maximum Ratings (Per Die)
Parameter
ID@ VGS = ±4.5V, TC= 25°C
ID@ VGS = ±4.5V, TC=100°C
IDM
PD @ TC = 25°C
VGS
EAS
IAR
EAR
dv/dt
TJ
T STG
Continuous Drain Current
Continuous Drain Current
Pulsed Drain Current À
Max. Power Dissipation
Linear Derating Factor
Gate-to-Source Voltage
Single Pulse Avalanche Energy
Avalanche Current À
Repetitive Avalanche Energy À
Peak Diode Recovery dv/dt
Operating Junction
Storage Temperature Range
Lead Temperature
Weight
N-Channel
P-Channel
1.07
0.67
4.28
1.0
0.01
±10
13 Á
1.07
0.1
7.0 Â
-0.71
-0.45
-2.84
1.0
Units
W
0.01
W/°C
±10
21 ²
-0.71
0.1
-14 ³
V
mJ
A
mJ
A
V/ns
-55 to 150
oC
300 (0.63 in./1.6 mm from case for 10s)
1.3 (Typical)
g
For footnotes refer to the last page
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1
03/01/11
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
Electrical Characteristics For Each N-Channel Device @Tj = 25°C (Unless Otherwise specified)
Parameter
Min
BVDSS
Drain-to-Source Breakdown Voltage
∆BV DSS /∆T J Temperature Coefficient of Breakdown
Voltage
RDS(on)
Static Drain-to-Source On-State
Resistance
VGS(th)
Gate Threshold Voltage
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
IDSS
Zero Gate Voltage Drain Current
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
Test Conditions
60
—
—
V
VGS = 0V, ID = 250µA
—
0.08
—
V/°C
Reference to 25°C, ID = 1.0mA
—
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
1.0
—
0.9
—
—
—
-4.04
—
—
—
2.0
—
—
1.0
10
V
mV/°C
S
VDS = VGS, ID = 250µA
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
—
10
100
-100
2.5
0.5
1.6
6.0
2.4
34
11
—
µA
nA
nC
ns
nH
Ã
VDS = 10V, IDS = 0.67A Ã
VDS= 48V ,VGS= 0V
VDS = 48V,
VGS = 0V, TJ =125°C
VGS = 10V
VGS = -10V
VGS = 4.5V, ID = 1.07A
VDS = 30V
VDD = 30V, ID = 1.07A,
VGS = 5.0V, RG = 24Ω
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
162
39
2.1
Rg
Gate Resistance
—
13.8
—
—
—
pF
Ω
—
VGS = 0V, VDS = 25V
f = 1.0MHz
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
1.07
4.28
1.2
51
70
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = 1.07A, VGS = 0V Ã
Tj = 25°C, IF = 1.07A, di/dt ≤ 100A/µs
VDD ≤ 25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
2
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
Electrical Characteristics For Each P-Channel Device @Tj = 25°C (Unless Otherwise specified)
BVDSS
Parameter
Min
Drain-to-Source Breakdown Voltage
-60
∆BV DSS /∆T J Temperature Coefficient of Breakdown —
Voltage
RDS(on)
Static Drain-to-Source On-State
—
Resistance
VGS(th)
Gate Threshold Voltage
-1.0
—
∆VGS(th)/∆TJ Gate Threshold Voltage Coefficient
gfs
Forward Transconductance
0.9
IDSS
Zero Gate Voltage Drain Current
—
—
IGSS
IGSS
Qg
Q gs
Q gd
td(on)
tr
td(off)
tf
LS + LD
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Total Gate Charge
Gate-to-Source Charge
Gate-to-Drain (‘Miller’) Charge
Turn-On Delay Time
Rise Time
Turn-Off Delay Time
Fall Time
Total Inductance
Typ Max Units
—
V
VGS = 0V, ID = -250µA
-0.08
—
V/°C
Reference to 25°C, ID = -1.0mA
—
1.25
Ω
VGS = -4.5V, ID = -0.45A
—
3.07
—
—
—
—
—
—
—
—
—
—
—
—
—
Test Conditions
—
—
—
—
—
—
—
—
—
—
10
-2.0
V
—
mV/°C
—
S
-1.0
-10
µA
-100
100
2.8
1.7
0.8
17
20
27
23
—
nA
nC
ns
nH
Ã
VDS = VGS, ID = -250µA
VDS = -10V, IDS = -0.45A Ã
VDS= -48V ,VGS= 0V
VDS = -48V,
VGS = 0V, TJ =125°C
VGS = -10V
VGS = 10V
VGS = -4.5V, ID = -0.71A
VDS = -30V
VDD = -30V, ID = -0.71A,
VGS = -5.0V, RG = 24Ω
Measured from Drain lead (6mm /0.25in
from pack.) to Source lead (6mm/0.25in
from pack.)with Source wire internally
bonded from Source pin to Drain pad
C iss
C oss
C rss
Input Capacitance
Output Capacitance
Reverse Transfer Capacitance
—
—
—
138
39
6.7
Rg
Gate Resistance
—
52.4
—
—
—
—
pF
VGS = 0V, VDS = -25V
f = 1.0MHz
Ω
f = 1.0MHz, open drain
Source-Drain Diode Ratings and Characteristics (Per Die)
Parameter
Min Typ Max Units
IS
ISM
VSD
t rr
Q RR
Continuous Source Current (Body Diode)
Pulse Source Current (Body Diode) À
Diode Forward Voltage
Reverse Recovery Time
Reverse Recovery Charge
ton
Forward Turn-On Time
—
—
—
—
—
—
—
—
—
—
-0.71
-2.84
-5.0
30
11
Test Conditions
A
V
ns
nC
Tj = 25°C, IS = -0.71A, VGS = 0V Ã
Tj = 25°C, IF = -0.71A, di/dt ≤ -100A/µs
VDD ≤ -25V Ã
Intrinsic turn-on time is negligible. Turn-on speed is substantially controlled by LS + LD.
Thermal Resistance (Per Die)
Parameter
RthJA
Junction-to-Ambient
Min Typ Max Units
—
—
125
°C/W
Test Conditions
Typical socket mount
Note: Corresponding Spice and Saber models are available on International Rectifier Website.
For footnotes refer to the last page
www.irf.com
3
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Radiation Characteristics
Pre-Irradiation
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each N-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
VGS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
„
Diode Forward Voltage
Units
Test Conditions
V
VGS = 0V, ID = 250µA
VGS = VDS, ID = 250µA
VGS = 10V
VGS = -10V
VDS= 48V, VGS= 0V
Min
Max
60
1.0
—
—
—
—
2.0
100
-100
1.0
µA
—
0.5
Ω
VGS = 4.5V, ID = 0.67A
—
0.6
Ω
VGS = 4.5V, ID = 0.67A
—
1.2
V
VGS = 0V, ID = 1.07A
nA
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy
Range
(MeV/(mg/cm ))
(MeV)
(µm)
0V
-2V
-4V
-5V
-6V
-7V
-8V
-10V
Br
37
305
39
60
60
60
60
60
35
30
20
I
60
370
34
60
60
60
60
60
20
15
-
Au
84
390
30
60
60
60
60
-
-
-
-
VDS
2
VDS (V)
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
70
60
50
40
30
20
10
0
Br
I
Au
0
-1 -2 -3 -4 -5 -6 -7 -8 -9 -10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
4
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PRELIMINARY
Radiation Characteristics
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
International Rectifier Radiation Hardened MOSFETs are tested to verify their radiation hardness capability.
The hardness assurance program at International Rectifier is comprised of two radiation environments.
Every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the TO-39 package. Both
pre- and post-irradiation performance are tested and specified using the same drive circuitry and test
conditions in order to provide a direct comparison.
Table 1. Electrical Characteristics For Each P-Channel Device @Tj = 25°C, Post Total Dose Irradiation ÄÅ
Parameter
BVDSS
V GS(th)
IGSS
IGSS
IDSS
RDS(on)
RDS(on)
VSD
Up to 300K Rads (Si)1
Min
Drain-to-Source Breakdown Voltage
Gate Threshold Voltage
Gate-to-Source Leakage Forward
Gate-to-Source Leakage Reverse
Zero Gate Voltage Drain Current
Static Drain-to-Source „
On-State Resistance (TO-39)
Static Drain-to-Source On-state „
Resistance (MO-036)
Diode Forward Voltage„
Max
Units
Test Conditions
V
VGS = 0V, ID = -250µA
VGS = VDS, ID = -250µA
VGS = -10V
VGS = 10V
VDS= -48V, VGS= 0V
-60
-1.0
—
—
—
—
-2.0
-100
100
-1.0
µA
—
1.20
Ω
VGS = -4.5V, ID = -0.45A
—
1.25
Ω
VGS = -4.5V, ID = -0.45A
—
-5.0
V
VGS = 0V, ID = -0.71A
nA
1. Part numbers IRHLG7670Z4, IRHLG7630Z4
International Rectifier radiation hardened MOSFETs have been characterized in heavy ion environment for
Single Event Effects (SEE). Single Event Effects characterization is illustrated in Fig. a and Table 2.
Table 2. Typical Single Event Effect Safe Operating Area (Per Die)
Ion
LET
Energy Range
2
VDS (V)
(MeV)
(µm)
0V
2V
4V
5V
6V
7V
8V
10V
Br
37
305
39
-60
-60
-60
-60
-60
-50
-35
-25
I
60
370
34
-60
-60
-60
-60
-60
-20
-
-
Au
84
390
30
-60
-60
-60
-60
-
-
-
-
VDS
(MeV/(mg/cm ))
@VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS= @VGS=
-70
-60
-50
-40
-30
-20
-10
0
Br
I
Au
0
1
2
3
4
5
6
7
8
9 10
VGS
Fig a. Typical Single Event Effect, Safe Operating Area
For footnotes refer to the last page
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5
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
10
VGS
TOP
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
1
2.5V
60µs PULSE WIDTH
Tj = 25°C
1
10
60µs PULSE WIDTH
Tj = 150°C
0.1
100
Fig 1. Typical Output Characteristics
10
100
Fig 2. Typical Output Characteristics
2.0
RDS(on) , Drain-to-Source On Resistance
10
T J = 150°C
(Normalized)
ID, Drain-to-Source Current (A)
1
VDS , Drain-to-Source Voltage (V)
VDS, Drain-to-Source Voltage (V)
1
T J = 25°C
VDS = 25V
20µs PULSE WIDTH
0.1
ID = 1.07A
1.5
1.0
0.5
VGS = 4.5V
0.0
2
2.5
3
3.5
4
VGS, Gate-to-Source Voltage (V)
Fig 3. Typical Transfer Characteristics
6
2.5V
1
0.1
0.1
0.1
VGS
10V
5.0V
4.5V
4.0V
3.5V
3.0V
2.75V
BOTTOM 2.5V
TOP
ID, Drain-to-Source Current (A)
ID, Drain-to-Source Current (A)
10
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 4. Normalized On-Resistance
Vs. Temperature
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
2.5
ID = 1.07A
2.0
1.5
1.0
T J = 150°C
0.5
T J = 25°C
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
N-Channel
Q1,Q3
0.8
0.75
T J = 150°C
0.7
0.65
0.6
0.55
0.5
T J = 25°C
0.45
0.4
Vgs = 4.5V
0.35
0.3
10 11 12
0
0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5
ID , Drain Current (A)
VGS, Gate -to -Source Voltage (V)
Fig 6. Typical On-Resistance Vs
Drain Current
80
2.5
ID = 1.0mA
VGS(th) Gate threshold Voltage (V)
V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
Fig 5. Typical On-Resistance Vs
Gate Voltage
70
60
2.0
1.5
1.0
ID = 50µA
ID = 250µA
0.5
ID = 1.0mA
ID = 150mA
0.0
50
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 7. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 8. Typical Threshold Voltage Vs
Temperature
7
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
280
240
ID = 1.07A
VGS, Gate-to-Source Voltage (V)
C rss = C gd
C oss = C ds + C gd
200
C, Capacitance (pF)
12
VGS = 0V,
f = 1 MHz
C iss = C gs + C gd, C ds SHORTED
Ciss
160
Coss
120
80
40
Crss
0
1
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 17
0
100
0
0.5
1
1.5
2
2.5
3
3.5
VDS, Drain-to-Source Voltage (V)
QG, Total Gate Charge (nC)
Fig 9. Typical Capacitance Vs.
Drain-to-Source Voltage
Fig 10. Typical Gate Charge Vs.
Gate-to-Source Voltage
4
1.2
10
1.0
ID, Drain Current (A)
ISD, Reverse Drain Current (A)
10
VDS = 48V
VDS = 30V
VDS = 12V
1
T J = 150°C
T J = 25°C
0.1
0.8
0.6
0.4
0.2
VGS = 0V
0.01
0
0
8
0.2
0.4
0.6
0.8
1.0
1.2
1.4
1.6
25
50
75
100
125
150
VSD , Source-to-Drain Voltage (V)
T C , Case Temperature (°C)
Fig 11. Typical Source-to-Drain Diode
Forward Voltage
Fig 12. Maximum Drain Current Vs.
Case Temperature
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
N-Channel
Q1,Q3
32
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
ID, Drain-to-Source Current (A)
10
1
1ms
0.1
Tc = 25°C
Tj = 150°C
Single Pulse
1
10ms
28
TOP
24
BOTTOM
ID
0.48A
0.68A
1.07A
20
16
12
8
4
0
10
25
100
50
75
100
125
150
Starting T J , Junction Temperature (°C)
VDS , Drain-to-Source Voltage (V)
Fig 13. Maximum Safe Operating Area
Fig 14. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
0.01
1
P DM
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 15. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
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9
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
N-Channel
Q1,Q3
V(BR)DSS
tp
15V
DRIVER
L
VDS
D.U.T.
RG
VGS
20V
+
V
- DD
IAS
tp
0.01Ω
A
I AS
Fig 16a. Unclamped Inductive Test Circuit
Fig 16b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+
V
- DS
VGS
3mA
IG
Charge
Fig 17a. Basic Gate Charge Waveform
VDS
RD
Fig 17b. Gate Charge Test Circuit
VDS
90%
VGS
D.U.T.
RG
ID
Current Sampling Resistors
VDD
+
-
V GS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 18a. Switching Time Test Circuit
10
10%
VGS
td(on)
tr
t d(off)
tf
Fig 18b. Switching Time Waveforms
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
10
VGS
TOP
-10V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
VGS
-10V
-5.0V
-4.5V
-3.0V
-2.75V
-2.5V
-2.25V
BOTTOM -2..0V
TOP
-I D, Drain-to-Source Current (A)
-I D, Drain-to-Source Current (A)
10
1
-2.0V
20µs PULSE WIDTH
Tj = 25°C
0.1
1
-2.0V
20µs PULSE WIDTH
Tj = 150°C
0.1
0.1
1
10
100
0.1
-VDS , Drain-to-Source Voltage (V)
10
100
-VDS , Drain-to-Source Voltage (V)
Fig 19. Typical Output Characteristics
Fig 20. Typical Output Characteristics
10
2.0
(Normalized)
T J = 25°C
RDS(on) , Drain-to-Source On Resistance
-I D, Drain-to-Source Current (A)
1
T J = 150°C
1
VDS = -25V
20µs PULSE WIDTH
0.1
ID = -0.71A
1.5
1.0
VGS = -4.5V
0.5
2
2.5
3
3.5
-V GS, Gate-to-Source Voltage (V)
Fig 21. Typical Transfer Characteristics
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-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Junction Temperature (°C)
Fig 22. Normalized On-Resistance
Vs. Temperature
11
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
4.0
ID = -0.71A
3.5
3.0
2.5
2.0
T J = 150°C
1.5
1.0
T J = 25°C
0.5
0
2
3
4
5
6
7
8
9
RDS(on), Drain-to -Source On Resistance ( Ω)
RDS(on), Drain-to -Source On Resistance (Ω)
P-Channel
Q2,Q4
2.4
2.2
T J = 150°C
2.0
1.8
1.6
1.4
T J = 25°C
1.2
1.0
Vgs = -4.5V
0.8
10 11 12
0
0.5
Fig 23. Typical On-Resistance Vs
Gate Voltage
2.0
2.5
3.0
Fig 24. Typical On-Resistance Vs
Drain Current
3.0
75
ID = -1.0mA
-V GS(th) Gate threshold Voltage (V)
-V(BR)DSS , Drain-to-Source Breakdown Voltage (V)
1.5
-I D, Drain Current (A)
-V GS, Gate -to -Source Voltage (V)
70
65
60
2.5
2.0
1.5
1.0
0.5
ID = -50µA
ID = -250µA
ID = -1.0mA
ID = -150mA
0.0
55
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 25. Typical Drain-to-Source
Breakdown Voltage Vs Temperature
12
1.0
-60 -40 -20
0
20
40
60
80 100 120 140 160
T J , Temperature ( °C )
Fig 26. Typical Threshold Voltage Vs
Temperature
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
240
12
VGS = 0V,
f = 1 MHz
C iss = C gs + Cgd, C ds SHORTED
C rss = C gd
C, Capacitance (pF)
C oss = C ds + Cgd
160
Ciss
120
Coss
80
VDS= -48V
VDS= -30V
VDS= -12V
ID = -0.71A
-V GS, Gate-to-Source Voltage (V)
200
40
10
8
6
4
2
FOR TEST CIRCUIT
SEE FIGURE 35
C rss
0
1
10
0
100
0
1
-VDS, Drain-to-Source Voltage (V)
2
3
4
5
6
QG, Total Gate Charge (nC)
Fig 27. Typical Capacitance
Vs.Drain-to-Source Voltage
Fig 28. Typical Gate Charge Vs.
Gate-to-Source Voltage
10
0.8
T J = 150°C
1
-I D, Drain Current (A)
-I SD, Reverse Drain Current (A)
0.7
T J = 25°C
0.1
0.6
0.5
0.4
0.3
0.2
0.1
VGS = 0V
0.01
0
0
0.5
1
1.5
2
2.5
3
3.5
-V SD , Source-to-Drain Voltage (V)
Fig 29. Typical Source-Drain Diode
Forward Voltage
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4
25
50
75
100
125
150
T C , Case Temperature (°C)
Fig 30. Maximum Drain Current Vs.
Case Temperature
13
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
P-Channel
Q2,Q4
50
OPERATION IN THIS AREA
LIMITED BY R DS(on)
EAS , Single Pulse Avalanche Energy (mJ)
-I D, Drain-to-Source Current (A)
10
1
1ms
0.1
10ms
0.01
Tc = 25°C
Tj = 150°C
Single Pulse
1
TOP
40
BOTTOM
ID
-0.32A
-0.45A
-0.71A
30
20
10
0
10
25
100
50
75
100
125
150
Starting T J , Junction Temperature (°C)
-VDS , Drain-to-Source Voltage (V)
Fig 31. Maximum Safe Operating Area
Fig 32. Maximum Avalanche Energy
Vs. Drain Current
Thermal Response ( Z thJA )
1000
100
D = 0.50
0.20
10
0.10
0.05
SINGLE PULSE
( THERMAL RESPONSE )
0.02
1
0.01
P DM
t1
t2
0.1
Notes:
1. Duty Factor D = t1/t2
2. Peak Tj = P dm x Zthjc + Tc
0.01
1E-005
0.0001
0.001
0.01
0.1
1
10
100
1000
t1 , Rectangular Pulse Duration (sec)
Fig 33. Maximum Effective Transient Thermal Impedance, Junction-to-Ambient
14
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PRELIMINARY
Pre-Irradiation
IRHLG7670Z4, 2N7635M1
P-Channel
Q2,Q4
L
VDS
I AS
D.U.T.
RG
IAS
-20V
VGS
tp
VDD
A
DRIVER
0.01Ω
tp
15V
V(BR)DSS
Fig 34a. Unclamped Inductive Test Circuit
Fig 34b. Unclamped Inductive Waveforms
Current Regulator
Same Type as D.U.T.
QG
-4.5V
50KΩ
12V
QGS
.2µF
.3µF
QGD
D.U.T.
VG
+VDS
VGS
-3mA
IG
Charge
ID
Current Sampling Resistors
Fig 35b. Gate Charge Test Circuit
Fig 35a. Basic Gate Charge Waveform
RD
V DS
td(on)
VGS
D.U.T.
RG
tr
t d(off)
tf
VGS
V DD
10%
-
+
VGS
Pulse Width ≤ 1 µs
Duty Factor ≤ 0.1 %
Fig 36a. Switching Time Test Circuit
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90%
VDS
Fig 36b. Switching Time Waveforms
15
PRELIMINARY
IRHLG7670Z4, 2N7635M1
Pre-Irradiation
Footnotes:
À Repetitive Rating; Pulse width limited by
maximum junction temperature.
Á VDD = 25V, starting TJ = 25°C, L= 22.5mH,
Peak IL = 1.07A, VGS = 10V
 ISD ≤ 1.07A, di/dt ≤ 214A/µs,
VDD ≤ 60V, TJ ≤ 150°C
à Pulse width ≤ 300 µs; Duty Cycle ≤ 2%
Ä Total Dose Irradiation with VGS Bias.
± 10 volt VGS applied and VDS = 0 during
irradiation per MIL-STD-750, method 1019, condition A
Å Total Dose Irradiation with VDS Bias.
± 48 volt VDS applied and VGS = 0 during
irradiation per MlL-STD-750, method 1019, condition A
² VDD = -25V, starting TJ = 25°C, L= 85mH,
Peak IL = -0.71A, VGS = -10V
³ ISD ≤ -0.71A, di/dt ≤ -164A/µs,
VDD ≤ -60V, TJ ≤ 150°C
Case Outline and Dimensions — MO-036AB
Q4
Q1
Q3
Q4
Q3
Q1
Q2
Q2
CHANNELS
N Ch.- Q1, Q3
P Ch.- Q2, Q4
IR WORLD HEADQUARTERS: 233 Kansas St., El Segundo, California 90245, USA Tel: (310) 252-7105
IR LEOMINSTER : 205 Crawford St., Leominster, Massachusetts 01453, USA Tel: (978) 534-5776
TAC Fax: (310) 252-7903
Visit us at www.irf.com for sales contact information.
Data and specifications subject to change without notice. 03/2011
16
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