SavantIC Semiconductor Product Specification BDX64C Silicon PNP Power Transistors DESCRIPTION ·With TO-3 package ·DARLINGTON ·Complement to type BDX65C APPLICATIONS ·Designed for power amplification and switching applications. PINNING (See Fig.2) PIN DESCRIPTION 1 Base 2 Emitter 3 Collector Fig.1 simplified outline (TO-3) and symbol Absolute maximum ratings(Ta=25 ) SYMBOL PARAMETER CONDITIONS VALUE UNIT VCBO Collector-base voltage Open emitter -120 V VCEO Collector-emitter voltage Open base -120 V VEBO Emitter-base voltage Open collector -5 V IC Collector current -12 A ICM Collector current(peak) -16 A IB Base current -0.2 A PT Total power dissipation 117 W Tj Junction temperature -55~200 Tstg Storage temperature -55~200 TC=25 THERMAL CHARACTERISTICS SYMBOL Rth j-c PARAMETER Thermal resistance from junction to case MAX 1.5 UNIT /W SavantIC Semiconductor Product Specification BDX64C Silicon PNP Power Transistors CHARACTERISTICS Tj=25 unless otherwise specified SYMBOL PARAMETER CONDITIONS VCEO(SUS) Collector-emitter sustaining voltage IC=-0.1A ; IB=0;L=25mH VCEsat Collector-emitter saturation voltage IC=-5A ;IB=-20mA VBE Base-emitter on voltage ICBO MIN TYP. MAX -120 UNIT V -2 V IC=-5A;VCE=-3V -2.5 V Collector cut-off current VCB=-120V; IE=0 TC=150 -0.2 -2 mA ICEO Collector cut-off current VCE=-60V; IB=0 -1 mA IEBO Emitter cut-off current VEB=-5V; IC=0 -5 mA VF Diode forward voltage IF=-5A -1.8 hFE-1 DC current gain IC=-1A ; VCE=-3V 1500 hFE-2 DC current gain IC=-5A ; VCE=-3V hFE-3 DC current gain IC=-12A ; VCE=-3V Transition frequency IC=-5A ; VCE=-3V;f=1MHz fT 2 V 1000 750 7 MHz SavantIC Semiconductor Product Specification Silicon PNP Power Transistors PACKAGE OUTLINE Fig.2 Outline dimensions 3 BDX64C