RF C2012X7R2A103M 380w gan wideband pulsed Datasheet

RF3928B
RF3928B
380W GaN
WIDEBAND
PULSED
POWER AMPLIFIER
380W GaN WIDEBAND PULSED
POWER AMPLIFIER
Package: Hermetic 2-Pin, Flanged Ceramic
Features

Wideband Operation 2.8GHz to
3.4GHz

Advanced GaN HEMT Technology

Advanced Heat-Sink Technology

RF IN
VG
Pin 1 (CUT )
RF OUT
VD
Pin 2
Supports Multiple Pulse
Conditions
GND
BASE
10% to 20% Duty Cycle
100s to 300s Pulse Width
Integrated Matching
Components for High Terminal
Impedances




Functional Block Diagram
65V Operation Typical
Performance




Pulsed Output Power 380W
Small Signal Gain 13dB
Drain Efficiency 50%
-40°C to 85°C Operating
Temperature
Applications



Radar
Air Traffic Control and
Surveillance
General Purpose Broadband
Amplifiers
Product Description
The RF3928B is a 65V 380W high power discrete amplifier designed for S-Band
pulsed radar, Air Traffic Control and Surveillance, and general purpose broadband
amplifier applications. Using an advanced high power density Gallium Nitride (GaN)
semiconductor process, these high-performance amplifiers achieve high output
power, high efficiency and flat gain over a broad frequency range in a single package. The RF3928B is a matched GaN transistor packaged in a hermetic, flanged
ceramic package. This package provides excellent thermal stability through the use
of advanced heat sink and power dissipation technologies. Ease of integration is
accomplished through the incorporation of simple, optimized matching networks
external to the package that provide wideband gain and power performance in a
single amplifier.
Ordering Information
RF3928BS2
RF3928BSB
RF3928BSQ
RF3928BSR
RF3928BTR13
RF3928B99PCBA-410
2-Piece sample bag
5-Piece bag
25-Piece reel
50 Pieces on 7” short reel
250 Pieces on 13” reel
Fully assembled evaluation board 2.8GHz to 3.4GHz;
65V operation
Optimum Technology Matching® Applied
GaAs HBT
GaAs MESFET
InGaP HBT
SiGe BiCMOS
Si BiCMOS
SiGe HBT
GaAs pHEMT
Si CMOS
Si BJT
GaN HEMT
BiFET HBT
RF MICRO DEVICES®, RFMD®, Optimum Technology Matching®, Enabling Wireless Connectivity™, PowerStar®, POLARIS™ TOTAL RADIO™ and UltimateBlue™ are trademarks of RFMD, LLC. BLUETOOTH is a trademark owned by Bluetooth SIG, Inc., U.S.A. and licensed for use by RFMD. All other trade names, trademarks and registered trademarks are the property of their respective owners. ©2012, RF Micro Devices, Inc.
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RF3928B
Absolute Maximum Ratings
Parameter
Rating
Unit
Drain Source Voltage
150
V
Gate Source Voltage
-8 to +2
V
155
mA
Operational Voltage
65
V
Ruggedness (VSWR)
3:1
Gate Current (IG)
Storage Temperature Range
-55 to +125
°C
Operating Temperature Range (TL)
-40 to +85
°C
250
°C
Operating Junction Temperature (TJ)
Human Body Model
Class 1A
MTTF (TJ < 200°C)
MTTF (TJ < 250°C)
3.0E + 06
1.4E + 05
Hours
0.90
0.18
0.25
°C/W
Thermal Resistance, Rth (junction to case)
TC =85°C, DC bias only
TC =85°C, 100s pulse, 10% duty cycle
TC =85°C, 300s pulse, 10% duty cycle
Caution! ESD sensitive device.
Exceeding any one or a combination of the Absolute Maximum Rating conditions may
cause permanent damage to the device. Extended application of Absolute Maximum
Rating conditions to the device may reduce device reliability. Specified typical performance or functional operation of the device under Absolute Maximum Rating conditions is not implied.
The information in this publication is believed to be accurate and reliable. However, no
responsibility is assumed by RF Micro Devices, Inc. ("RFMD") for its use, nor for any
infringement of patents, or other rights of third parties, resulting from its use. No
license is granted by implication or otherwise under any patent or patent rights of
RFMD. RFMD reserves the right to change component circuitry, recommended application circuitry and specifications at any time without prior notice.
RoHS (Restriction of Hazardous Substances): Compliant per EU Directive
2002/95/EC.
* MTTF – median time to failure for wear-out failure mode (30% Idss degradation) which is determined by the technology process reliability.
Refer to product qualification report for FIT (random) failure rate.
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device
voltage and current must not exceed the maximum operating values specified in the table on page two.
Bias Conditions should also satisfy the following expression: PDISS <(TJ –TC)/RTH J-C and TC =TCASE
Parameter
Min.
Specification
Typ.
Max.
Unit
Condition
Recommended Operating
Condition
Drain Voltage (VDSQ)
Gate Voltage (VGSQ)
65
V
3400
MHz
IG (OFF) – Gate Leakage
2
mA
VG =-8V, VD =0V
ID (OFF) – Drain Leakage
2
mA
VG =-8V, VD =65V
Drain Bias Current
Frequency of Operation
-3
V
-2
-8
440
2800
mA
DC Functional Test
VGS (th) – Threshold Voltage
-3.5
V
VD =65V, ID =40mA
VDS (on) – Drain Voltage at high
current
0.22
V
VG =0V, ID =1.5A
13
dB
F=2900MHz, PIN =30dBm
dB
F=2900MHz, PIN =44dBm
dB
F=2900MHz, PIN =30dBm
F=2900MHz, PIN =44dBm
RF Functional Test
[1, 2]
Small Signal Gain
Power Gain
11.2
11.8
Input Return Loss
Output Power
Drain Efficiency
Small Signal Gain
2 of 11
-6
55.3
56
dBm
45
50
%
13
dB
F=3150MHz, PIN =30dBm
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3928B
Parameter
Min.
Specification
Typ.
11.2
11.8
55.5
56
45
50
%
13
dB
F=3400MHz, PIN =30dBm
11.3
11.8
dB
F=3400MHz, PIN =44dBm
dB
F=3400MHz, PIN =30dBm
55.5
56
dBm
F=3400MHz, PIN =44dBm
45
50
%
Max.
Unit
Condition
RF Functional Test
(continued)
Power Gain
Input Return Loss
-6
Output Power
Drain Efficiency
Small Signal Gain
Power Gain
Input Return Loss
-6
Output Power
Drain Efficiency
dB
F=3150MHz, PIN =44dBm
dB
F=3150MHz, PIN =30dBm
dBm
F=3150MHz, PIN =44dBm
RF Typical Performance
[1, 2]
Frequency Range
2800
Small Signal Gain
3400
13
Power Gain
11.8
Gain Variation with Temperature
Output Power (PSAT)
Drain Efficiency
-0.015
MHz
dB
F=3100MHz, PIN =30dBm
dB
POUT =55.8dBm
dB/°C
At peak output power
55.8
dBm
Peak output power
380
W
Peak output power
50
%
At peak output power
[1] Test Conditions: Pulsed Operation, PW=100s, DC=10%, VDS =65V, IDQ =440mA, T=25ºC
[2] Performance in a standard tuned test fixture
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RF3928B
Typical Performance in Standard Fixed Tuned Test Fixture over Temperature
(Pulsed at Center Band Frequency)
GainversusOutputPower(f=3200MHz)
EfficiencyversusOutputPower(f=3200MHz)
(Pulsed10%dutycycle,100μS,VD =65V,IDQ =440mA)
(Pulsed10%dutycycle,100μS,VD =65V,IDQ=440mA)
17
70
16
60
DrainEfficiency(%)
Gain(dB)
15
14
13
12
Gain85°C
11
Eff85°C
Eff25°C
Eff40°C
50
40
30
20
Gain25°C
Gain40°C
10
10
45
46
47
48
49
50
51
52
53
OutputPower(dBm)
54
55
56
57
45
46
47
48
49
50
51
52
53
OutputPower(dBm)
54
55
56
57
InputReturnLossversusOutputPower(f=3200MHz)
(Pulsed10%dutycycle,100μS,VD =65V,IDQ =440mA)
6
IRL,InputReturnLoss(dB)
7
IRL85°C
IRL25°C
IRL40°C
8
9
10
11
12
45
4 of 11
46
47
48
49
50
51
52
53
OutputPower(dBm)
54
55
56
57
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3928B
Typical Performance in Standard Fixed-tuned Test Fixture (T=25°C, Unless
Noted)
SmallSignalPerformanceversusFrequency,PIN =30dBm
Gain/IRLversusFrequency,PIN =44dBm
(Pulsed10%dutycycle,100μS,VD =65V,IDQ =440mA)
(Pulsed10%dutycylce,100μS,VD =65V,IDQ =440mA)
12
6
11
8
10
10
8
2800
2900
3000
IRL
12
4
11
8
Gain(dB)
4
Gain
Fixedtuned testcircuit
2
13
9
0
12
3100
3200
Frequency(MHz)
3300
3400
14
3500
Gain
10
2800
2900
Gain(dB)
DrainEfficiency(%)
3100
3200
3300
Frequency(MHz)
3400
12
3600
3500
(Pulsed10%dutycycle,100μS,VD =65V,IDQ =440mA)
(Pulsed10%dutycycle,100μS,VD=65V,IDQ =440mA)
DS120503
3000
IRL
Gain/EfficiencyversusPOUT ,f=3200MHz
DrainEfficiencyversusFrequency,PIN =44dBm
55
54
Fixedtuned testcircuit
53
52
51
50
49
48
47
46
45
44
43
42
Eff
41
40
2800
2900
3000
3100
3200
3300
Frequency(MHz)
InputReturnLoss(dB)
Fixedtuned testcircuit
13
InputReturnLoss(dB)
Gain(dB)
14
0
15
70
14
60
13
50
12
40
11
30
DrainEfficiency(%)
15
Gain
10
20
DrainEff
9
3400
3500
3600
10
45
46
47
48
49
50
51
52
OutputPower(dBm)
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
53
54
55
56
5 of 11
RF3928B
Typical Performance in Standard Fixed-tuned Test Fixture (T=25°C, Unless
Noted)
Pout/DEversusPulseWidth,f=3200MHz
Pout/DEversusDutyCycle,f=3200MHz
55
360
50
340
45
320
40
300
35
280
30
OutputPower
260
25
DrainEfficiency
65
375
60
350
55
325
50
300
45
275
40
Pout
240
20
10
400
100
PulseWidth(μsec)
1000
DrainEfficiency(%)
380
POUT(W)
(Pulsed,100μspulse,VD =65V,IDQ =440mA)
60
DrainEfficiency(%)
POUT (W)
(Pulsed10%dutycycle,VD =65V,IDQ =440mA)
400
Eff
250
35
0
5
10
DutyCycle(%)
15
20
PulsePowerDissipationDeratingCurve
(BasedonMaximumpackagetemperatureandRth)
1200
PowerDissipation(W)
1000
800
600
400
300SPulseWidth,10%DutyCycle
200
100SPulseWidth,10%DutyCycle
0
0
20
40
60
80
100
120
140
MaximumCaseTemperature(°C)
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RF3928B
Package Drawing
(All Dimensions in mm)
Pin
1
2
3
DS120503
Function
Gate
Drain
Source
Description
VG RF InputPin
Function
Description
VD RF Output
Ground Base
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RF3928B
Bias Instruction for RF3928B Evaluation Board
ESD Sensitive Material. Please use proper ESD precautions when handling devices of evaluation board. Evaluation board
requires additional external fan cooling. Connect all supplies before powering evaluation board.
1. Connect RF cables at RFIN and RFOUT.
2. Connect ground to the ground supply terminal, and ensure that both the VG and VD grounds are also connected to this
ground terminal.
3. Apply -6V to VG.
4. Apply 65V to VD.
5. Increase VG until drain current reaches 440mA or desired bias point.
6. Turn on the RF input.
IMPORTANT NOTE: Depletion mode device, when biasing the device VG must be applied BEFORE VD. When removing bias VD
must be removed BEFORE VG is removed. Failure to follow sequencing will cause the device to fail.
NOTE: For optimal RF performance, consistent and optimal heat removal from the base of the package is required. A thin layer
of thermal grease should be applied to the interface between the base of the package and the equipment chassis. It is recommended a small amount of thermal grease is applied to the underside of the device package. Even application and removal of
excess thermal grease can be achieved by spreading the thermal grease using a razor blade. The package should then be
bolted to the chassis and input and output leads soldered to the circuit board.
Vd
Vg
RFIN
RFOUT
RF3928B
2.8GHz to 3.4GHz
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RF3928B
Evaluation Board Schematic
VDRAIN
+
VGATE
L21
L20
L22
L23
R3
C14
C17
C7
C8
+
R2
R1
C5
C6
C19
C18
C4
C3
C2
C12
C13
C15
C16
L1
50  strip
J1
RF IN
RF3928B
C1
C10
C11
50  strip
J2
RF OUT
C9
Evaluation Board Bill of Materials
Component
Value
Manufacturer
Part Number
R1
R2
R3
C1,C11
C2, C14
C5, C16
C6, C15
C7
C8, C18
C9
C10
C17
L1
L20, L21
L22, L23
C19
C3, C4, C7, C12, C13
10
0
51
22pF
15pF
1000pF
10000pF
120
10F
0.7pF
0.2pF
62pF
22nH
115, 10A
75, 10A
330F
NOT POPULATED
Panasonic
Panasonic
Panasonic
ATC
ATC
Novacap
TDK
Panasonic
Panasonic
ATC
ATC
ATC
Coilcraft
Steward
Steward
Illinois Capacitor
ERJ-8GEYJ100V
ERJ-3GEY0R00
ERJ-8GEYJ510
ATC100A220JT
ATC100A150JT
0805G102M101NT
C2012X7R2A103M
ERJ-6GEYJ120V
EEU-FC2A100
ATC100A0R7BT
ATC100A0R2BT
ATC100B620JT
0807SQ-22N_LC
28F0181-1SR-10
35F0121-1SR-10
9337CKE100M
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7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3928B
Evaluation Board Layout
Device Impedances
Frequency (MHz)
Z Source ()
Z Load ()
2800
60.4 – j0.5
42.1 – j30.5
3000
51.9 – j13.5
33.8 – j25.7
3200
44.1 – j16.5
29.5 – j8.9
3400
38.3 – j16.7
17.0 – j9.0
NOTE: Device impedances reported are the measured evaluation board impedances chosen for a trade off of peak power, peak efficiency and
gain performance across the entire frequency bandwidth.
10 of 11
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support, contact RFMD at (+1) 336-678-5570 or [email protected].
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RF3928B
Device Handling/Environmental Conditions
GaN HEMT devices are ESD sensitive materials. Please use proper ESD precautions when handling devices or
evaluation boards.
GaN HEMT Capacitances
The physical structure of the GaN HEMT results in three terminal capacitors similar to other FET technologies.
These capacitances exist across all three terminals of the device. The physical manufactured characteristics of
the device determine the value of the CDS (drain to source), CGS (gate to source) and CGD (gate to drain). These
capacitances change value as the terminal voltages are varied. RFMD presents the three terminal capacitances
measured with the gate pinched off (VGS = -8V) and zero volts applied to the drain. During the measurement process, the parasitic capacitances of the package that holds the amplifier is removed through a calibration step.
Any internal matching is included in the terminal capacitance measurements. The capacitance values presented
in the typical characteristics table of the device represent the measured input (CISS), output (COSS), and reverse
(CRSS) capacitance at the stated bias voltages. The relationship to three terminal capacitances is as follows:
CISS = CGD + CGS
COSS = CGD + CDS
CRSS = CGD
DC Bias
The GaN HEMT device is a depletion mode high electron mobility transistor (HEMT). At zero volts VGS the drain of
the device is saturated and uncontrolled drain current will destroy the transistor. The gate voltage must be taken
to a potential lower than the source voltage to pinch off the device prior to applying the drain voltage, taking care
not to exceed the gate voltage maximum limits. RFMD recommends applying VGS = -5V before applying any VDS.
RF Power transistor performance capabilities are determined by the applied quiescent drain current. This drain
current can be adjusted to trade off power, linearity, and efficiency characteristics of the device. The recommended quiescent drain current (IDQ) shown in the RF typical performance table is chosen to best represent the
operational characteristics for this device, considering manufacturing variations and expected performance.
The user may choose alternate conditions for biasing this device based on performance trade off.
Mounting and Thermal Considerations
The thermal resistance provided as RTH (junction to case) represents only the packaged device thermal characteristics. This is measured using IR microscopy capturing the device under test temperature at the hottest spot of
the die. At the same time, the package temperature is measured using a thermocouple touching the backside of
the die embedded in the device heatsink but sized to prevent the measurement system from impacting the
results. Knowing the dissipated power at the time of the measurement, the thermal resistance is calculated.
In order to achieve the advertised MTTF, proper heat removal must be considered to maintain the junction at or
below the maximum of 200°C. Proper thermal design includes consideration of ambient temperature and the
thermal resistance from ambient to the back of the package including heatsinking systems and air flow mechanisms. Incorporating the dissipated DC power, it is possible to calculate the junction temperature of the device.
DS120503
7628 Thorndike Road, Greensboro, NC 27409-9421 · For sales or technical
support, contact RFMD at (+1) 336-678-5570 or [email protected].
11 of 11
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