IXYS IXTP140P05T Trenchp power mosfets p-channel enhancement mode avalanche rated Datasheet

IXTA140P05T
IXTP140P05T
IXTH140P05T
TrenchPTM
Power MOSFETs
VDSS
ID25
=
=
≤
RDS(on)
P-Channel Enhancement Mode
Avalanche Rated
- 50V
- 140A
Ω
9mΩ
TO-263 AA (IXTA)
G
S
D (Tab)
TO-220AB (IXTP)
Symbol
Test Conditions
Maximum Ratings
VDSS
TJ = 25°C to 150°C
- 50
V
VDGR
TJ = 25°C to 150°C, RGS = 1MΩ
- 50
V
VGSS
Continuous
±15
V
VGSM
Transient
±25
V
ID25
TC = 25°C (Chip Capability)
-140
A
ILRMS
IDM
Lead Current Limit, RMS
TC = 25°C, Pulse Width Limited by TJM
-120
- 420
A
A
IA
EAS
TC = 25°C
TC = 25°C
- 70
1
A
J
PD
TC = 25°C
298
W
-55 ... +150
150
-55 ... +150
°C
°C
°C
300
260
°C
°C
1.13/10
Nm/lb.in.
2.5
3.0
6.0
g
g
g
TJ
TJM
Tstg
TL
TSOLD
1.6mm (0.062 in.) from Case for 10s
Plastic Body for 10s
Md
Mounting Torque (TO-220 & TO-247)
Weight
TO-263
TO-220
TO-247
G
DS
D (Tab)
TO-247 (IXTH)
G
D
S
G = Gate
S = Source
D (Tab)
D
= Drain
Tab = Drain
Features
z
International Standard Packages
Avalanche Rated
z
Extended FBSOA
z
Fast Intrinsic Diode
z
Low RDS(ON) and QG
z
Advantages
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
Characteristic Values
Min.
Typ. Max.
BVDSS
VGS = 0V, ID = - 250μA
- 50
VGS(th)
VDS = VGS, ID = - 250μA
- 2.0
IGSS
VGS = ± 15V, VDS = 0V
±100 nA
IDSS
VDS = VDSS, VGS = 0V
-10 μA
- 750 μA
RDS(on)
VGS = -10V, ID = 0.5 • ID25, Note 1
TJ = 125°C
z
z
V
- 4.0
V
9 mΩ
z
Applications
z
z
z
z
z
z
© 2013 IXYS CORPORATION, All Rights Reserved
Easy to Mount
Space Savings
High Power Density
High-Side Switching
Push Pull Amplifiers
DC Choppers
Automatic Test Equipment
Current Regulators
Battery Charger Applications
DS100027C(01/13)
IXTA140P05T IXTP140P05T
IXTH140P05T
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
gfs
Characteristic Values
Min.
Typ.
Max.
VDS = -10V, ID = 0.5 • ID25, Note 1
44
Ciss
VGS = 0V, VDS = - 25V, f = 1MHz
Coss
Crss
td(on)
Resistive Switching Times
tr
VGS = -10V, VDS = - 30V, ID = - 50A
td(off)
RG = 1Ω (External)
tf
Qg(on)
VGS = -10V, VDS = 0.5 • VDSS, ID = 0.5 • ID25
Qgs
Qgd
72
S
13.5
nF
1640
pF
640
pF
28
ns
34
ns
38
ns
25
ns
200
nC
50
nC
65
nC
TO-220
TO-247
0.50
0.21
Source-Drain Diode
Symbol
Test Conditions
(TJ = 25°C, Unless Otherwise Specified)
°C/W
°C/W
Characteristic Values
Min.
Typ.
Max.
IS
VGS = 0V
-140
A
ISM
Repetitive, Pulse Width Limited by TJM
- 560
A
VSD
IF = - 70A, VGS = 0V, Note 1
-1.3
V
trr
QRM
IRM
IF = - 70A, -di/dt = -100A/μs
VR = - 25V, VGS = 0V
Note
1 = Gate
2 = Drain
3 = Source
0.42 °C/W
RthJC
RthCS
TO-247 Outline
53
58
- 2.2
ns
nC
A
TO-220 Outline
1. Pulse test, t ≤ 300μs, duty cycle, d ≤ 2%.
TO-263 Outline
Pins:
1 - Gate
3 - Source
2 - Drain
Pins:
1 - Gate
2,4 - Drain
3 - Source
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS MOSFETs and IGBTs are covered
4,835,592
by one or more of the following U.S. patents: 4,860,072
4,881,106
4,931,844
5,017,508
5,034,796
5,049,961
5,063,307
5,187,117
5,237,481
5,381,025
5,486,715
6,162,665
6,259,123 B1
6,306,728 B1
6,404,065 B1
6,534,343
6,583,505
6,683,344
6,727,585
7,005,734 B2
6,710,405 B2 6,759,692
7,063,975 B2
6,710,463
6,771,478 B2 7,071,537
7,157,338B2
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 2. Extended Output Characteristics @ T J = 25ºC
Fig. 1. Output Characteristics @ T J = 25ºC
-140
-350
VGS = -10V
- 9V
- 8V
-120
- 9V
-300
- 8V
-250
ID - Amperes
-100
ID - Amperes
VGS = -10V
- 7V
-80
-60
- 6V
-40
- 7V
-200
-150
- 6V
-100
-20
- 5V
-50
- 5V
0
0
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
0
-4
-6
-8
-10
-12
-14
VDS - Volts
Fig. 3. Output Characteristics @ T J = 125ºC
Fig. 4. RDS(on) Normalized to ID = - 70A Value vs.
Junction Temperature
-16
1.6
-140
VGS = -10V
- 9V
- 8V
-120
VGS = -10V
I D = - 140A
1.4
R DS(on) - Normalized
-100
ID - Amperes
-2
VDS - Volts
- 7V
-80
- 6V
-60
-40
I D = - 70A
1.2
1.0
0.8
- 5V
-20
0
0.6
0
-0.2
-0.4
-0.6
-0.8
-1
-1.2
-1.4
-1.6
-50
-25
0
VDS - Volts
Fig. 5. RDS(on) Normalized to ID = - 70A Value vs.
Drain Current
50
75
100
125
150
125
150
Fig. 6. Maximum Drain Current vs.
Case Temperature
1.8
-140
VGS = -10V
1.7
-120
External Lead Current Limit
TJ = 125ºC
1.6
-100
1.5
ID - Amperes
R DS(on) - Normalized
25
TJ - Degrees Centigrade
1.4
1.3
-80
-60
1.2
-40
TJ = 25ºC
1.1
-20
1.0
0.9
0
0
-50
-100
-150
-200
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-250
-300
-350
-50
-25
0
25
50
75
TC - Degrees Centigrade
100
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 7. Input Admittance
Fig. 8. Transconductance
-180
TJ = - 40ºC
100
-160
-140
80
TJ = 125ºC
25ºC
- 40ºC
-100
g f s - Siemens
ID - Amperes
-120
-80
-60
-40
25ºC
125ºC
60
40
20
-20
0
-2.5
0
-3.0
-3.5
-4.0
-4.5
-5.0
-5.5
-6.0
-6.5
0
-20
-40
-60
VGS - Volts
Fig. 9. Forward Voltage Drop of Intrinsic Diode
-100
-120
-140
-160
-180
Fig. 10. Gate Charge
-300
-10
VDS = - 25V
-9
-250
I D = - 70A
-8
I G = -1mA
-7
VGS - Volts
-200
IS - Amperes
-80
ID - Amperes
-150
-100
TJ = 125ºC
-6
-5
-4
-3
TJ = 25ºC
-2
-50
-1
0
-0.4
0
-0.5
-0.6
-0.7
-0.8
-0.9
-1.0
-1.1
-1.2
-1.3
-1.4
0
-1.5
20
40
Fig. 11. Capacitance
80
100
120
140
160
180
200
Fig. 12. Forward-Bias Safe Operating Area
- 1,000
100,000
f = 1 MHz
RDS(on) Limit
25µs
Ciss
100µs
- 100
10,000
ID - Amperes
Capacitance - PicoFarads
60
QG - NanoCoulombs
VSD - Volts
Coss
1,000
External Lead
Current Limit
- 10
Crss
100
0
-5
-10
-15
-20
-25
-30
-35
-40
VDS - Volts
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
1ms
-1
-1
10ms
TJ = 150ºC
100ms
TC = 25ºC
Single Pulse
DC
- 10
VDS - Volts
- 100
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 14. Resistive Turn-on Rise Time vs.
Drain Current
Fig. 13. Resistive Turn-on Rise Time vs.
Junction Temperature
38
38
RG = 1Ω, VGS = -10V
36
36
TJ = 25ºC
VDS = - 30V
34
t r - Nanoseconds
t r - Nanoseconds
34
32
30
I
28
I
26
D
D
= - 50A
= - 25A
32
RG = 1Ω, VGS = -10V
30
VDS = - 30V
28
26
TJ = 125ºC
24
24
22
22
25
35
45
55
65
75
85
95
105
115
125
-24
-26
-28
-30
-32
-34
TJ - Degrees Centigrade
Fig. 15. Resistive Turn-on Switching Times vs.
Gate Resistance
80
td(on) - - - 70
TJ = 125ºC, VGS = -10V
t r - Nanoseconds
I D = - 50A, - 25A
120
50
80
40
40
0
0
2
4
6
8
10
12
14
16
18
28
tf
td(off) - - - -
27
VDS = - 30V
60
26
55
25
30
23
40
20
22
25
70
280
65
240
35
45
55
50
TJ = 25ºC, 125ºC
45
t f - Nanoseconds
26
95
105
115
35
125
ID - Amperes
© 2013 IXYS CORPORATION, All Rights Reserved
-46
-48
-50
180
I D = - 25A, - 50A
60
0
-44
220
100
30
22
VDS = - 30V
80
40
-42
260
140
35
-40
td(off) - - - -
120
23
-38
tf
160
40
-36
85
300
200
24
-34
75
20
0
2
4
6
8
10
RG - Ohms
12
14
16
18
20
t d(off) - Nanoseconds
60
55
-32
65
TJ = 125ºC, VGS = -10V
27
-30
50
I D = - 25A, - 50A
45
t d(off) - Nanoseconds
t f - Nanoseconds
td(off) - - - -
VDS = - 30V
-28
65
Fig. 18. Resistive Turn-off Switching Times vs.
Gate Resistance
RG = 1Ω, VGS = -10V
-26
-50
TJ - Degrees Centigrade
tf
-24
-48
24
20
30
25
-46
RG = 1Ω, VGS = -10V
Fig. 17. Resistive Turn-off Switching Times vs.
Drain Current
28
-44
70
RG - Ohms
29
-42
t d(off) - Nanoseconds
60
t d(on) - Nanoseconds
VDS = - 30V
160
-40
29
t f - Nanoseconds
tr
-38
Fig. 16. Resistive Turn-off Switching Times vs.
Junction Temperature
240
200
-36
ID - Amperes
IXTA140P05T IXTP140P05T
IXTH140P05T
Fig. 19. Maximum Transient Thermal Impedance
Z (th)JC - ºC / W
1
0.1
0.01
0.001
0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width - Seconds
IXYS Reserves the Right to Change Limits, Test Conditions, and Dimensions.
IXYS REF: T_140P05T(A6)11-08-10-A
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