Filtronic FMA219 X-band lna mmic Datasheet

PRELIMINARY
•
PERFORMANCE
♦ 7.0 – 11.0 GHz Operating Bandwidth
♦ 1.5 dB Noise Figure
♦ 21 dB Small-Signal Gain
♦ 12 dBm Output Power
♦ +3V Single Bias Supply
♦ DC De-coupled Input and Output Ports
•
DESCRIPTION AND APPLICATIONS
FMA219
X-BAND LNA MMIC
The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use
over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip
component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding
of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is
required.
Typical applications include low-noise front end amplifiers, and general gain block utilizations in Xband. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally
stable if the input port is open-circuited.
•
ELECTRICAL SPECIFICATIONS AT 22°C
Parameter
Symbol
Test Conditions
Min
Operating Frequency Bandwidth
BW
VDD = +3 V IDD = IOP
7
Small Signal Gain
S21
VDD = +3 V IDD = IOP
19
Operating Current
IOP
No RF input
50
Small Signal Gain Flatness
∆S21
Noise Figure
3 -Order Intermodulation Distortion
rd
Max
Units
11
GHz
21
23
dB
65
85
mA
VDD = +3 V IDD = IOP
±0.5
±0.8
NF
VDD = +3 V, IDD = IOP
1.5
1.7
IMD
VDD = +3 V, IDD = IOP
POUT = +1.5 dBm SCL
dB
-47
dBc
12.5
dBm
Power at 1dB Compression
P1dB
VDD = +3 V
Input Return Loss
S11
VDD = +3 V IDD = IOP
-7
-3
dB
Output Return Loss
S22
VDD = +3 V IDD = IOP
-16
-10
dB
Reverse Isolation
S12
VDD = +3 V IDD = IOP
-40
-30
dB
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
11.5
Typ
Revised: 11/22/04
Email: [email protected]
PRELIMINARY
•
FMA219
X-BAND LNA MMIC
ABSOLUTE MAXIMUM RATINGS1
Parameter
Symbol
Test Conditions
Supply Voltage
VDD
Supply Current
Max
Units
For any operating current
6
V
IDD
For VDD < 5V
100
mA
RF Input Power
PIN
For standard bias conditions
-5
dBm
Storage Temperature
TSTG
Non-Operating Storage
150
ºC
Total Power Dissipation
PTOT
See De-Rating Note below
600
mW
Comp.
Under any bias conditions
5
dB
Gain Compression
2
Simultaneous Combination of Limits
TAmbient = 22°C unless otherwise noted
1
Min
-40
2 or more Max. Limits
80
%
Users should avoid exceeding 80% of 2 or more Limits simultaneously
2
Notes:
• Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device.
• Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where:
PDC: DC Bias Power
PIN: RF Input Power
POUT: RF Output Power
• Total Power Dissipation to be de-rated as follows above 22°C:
PTOT= 0.6 - (0.004W/°C) x TCARRIER
where TCARRIER = carrier or heatsink temperature above 22°C
(coefficient of de-rating formula is the Thermal Conductivity)
Example: For a 55°C carrier temperature: PTOT = 0.6 - (0.004 x (55 – 22)) = 0.47W
• For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with
some degradation in thermal de-rating performance (PTOT = 550mW)
• Note on Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach
temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W.
•
HANDLING PRECAUTIONS
To avoid damage to the devices care should be exercised during handling. Proper Electrostatic
Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and
testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model.
Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263.
•
APPLICATIONS NOTES & DESIGN DATA
Applications Notes are available from your local Filtronic Sales Representative or directly from the
factory.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/22/04
Email: [email protected]
PRELIMINARY
•
FMA219
X-BAND LNA MMIC
ASSEMBLY DRAWING
Input and output thin film
substrates with 50Ω microstrip
transmission lines. Substrate
thickness 250µm or thinner is
recommended.
25µm dia. Au wire (x2) on
input and output ports, less
than 1000µm length each
75µm nominal gap on
each side
150pF
capacitor
To +VDD
250µm Au ribbon
recommended
Notes:
• Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The
bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is
recommended. Ultrasonic or thermosonic bonding is not recommended.
• The recommended die attach is conductive epoxy, following the manufacturer’s recommended curing procedure.
• For eutectic die attach the maximum time at 280-300°C is 60 seconds, and should be kept to a minium.
• The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical.
All information and specifications subject to change without notice.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/22/04
Email: [email protected]
PRELIMINARY
•
FMA219
X-BAND LNA MMIC
TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP)
FMA219 FREQUENCY RESPONSE
SSG, Input / Output Return Loss (dB)
24
20
16
S21
12
8
S11
4
0
S22
-4
-8
-12
-16
-20
5
6
7
8
9
10
11
12
13
14
15
Frequency [GHz]
•
TYPICAL NOISE FIGURE PERFORMANCE
FMA219BF NOISE FIGURE
1.4
1.3
1.2
Noise Figure (dB)
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
7
8
9
10
11
Frequency (GHz)
¾ Multiple traces show typical die variation across a 150mm (6 in.) wafer.
Note: Effect of typical bondwire inductance (25 µm dia., 1000 µm length, 2 ea. on input and output
ports) is less than 0.5 dB decrease in S21 (11GHz), and no measurable effect on noise figure.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/22/04
Email: [email protected]
PRELIMINARY
•
FMA219
X-BAND LNA MMIC
POWER TRANSFER CHARACTERISTIC
FMA219BF POWER TRANSFER CHARACTERISTIC
16.0
4.0
Pout@7GHz
14.0
3.5
Pout@9GHz
Pout@11GHz
3.0
Output Power (dBm)
Comp@7GHz
Comp@9GHz
10.0
2.5
Comp@11GHz
8.0
2.0
6.0
1.5
4.0
1.0
2.0
0.5
Compression Point, (dB)
12.0
0.0
0.0
-23.0
-21.0
-19.0
-17.0
-15.0
-13.0
-11.0
-9.0
-7.0
-5.0
-3.0
Pin (dBm)
•
TYPICAL 3RD-ORDER INTERMODULATION PERFORMANCE
FMA219
IM PRODUCTS vs. INPUT POWER AT 9.0 GHz
-15.00
11.0
Pout
Im3, dBc
-20.00
Ou 9.0
tp
ut
Po
7.0
we
r
(d
B 5.0
m)
IM
Pr
od
uc
-30.00 ts
(d
Bc
-35.00 )
-25.00
3.0
1.0
-19.0
-40.00
-45.00
-17.0
-15.0
-13.0
-11.0
-9.0
-7.0
Input Power (dBm)
¾ Equivalent output IP3 performance exceeds 24 dBm, input IP3 is typically ≥ +2 dBm.
Phone: +1 408 850-5790
Fax: +1 408 850-5766
http://www.filtronic.co.uk/semis
Revised: 11/22/04
Email: [email protected]
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