PRELIMINARY • PERFORMANCE ♦ 7.0 – 11.0 GHz Operating Bandwidth ♦ 1.5 dB Noise Figure ♦ 21 dB Small-Signal Gain ♦ 12 dBm Output Power ♦ +3V Single Bias Supply ♦ DC De-coupled Input and Output Ports • DESCRIPTION AND APPLICATIONS FMA219 X-BAND LNA MMIC The FMA219 is a 2-stage, reactively matched pHEMT low-noise MMIC amplifier designed for use over the 7.0 to 11.0 GHz bandwidth. The amplifier requires a single +3V supply and one off-chip component for supply de-coupling. Both the input and output ports are DC de-coupled. Grounding of the amplifier is provided by plated thru-vias to the bottom of the die, no additional ground is required. Typical applications include low-noise front end amplifiers, and general gain block utilizations in Xband. The amplifier is unconditionally stable over all load states (-45 to +85°C), and conditionally stable if the input port is open-circuited. • ELECTRICAL SPECIFICATIONS AT 22°C Parameter Symbol Test Conditions Min Operating Frequency Bandwidth BW VDD = +3 V IDD = IOP 7 Small Signal Gain S21 VDD = +3 V IDD = IOP 19 Operating Current IOP No RF input 50 Small Signal Gain Flatness ∆S21 Noise Figure 3 -Order Intermodulation Distortion rd Max Units 11 GHz 21 23 dB 65 85 mA VDD = +3 V IDD = IOP ±0.5 ±0.8 NF VDD = +3 V, IDD = IOP 1.5 1.7 IMD VDD = +3 V, IDD = IOP POUT = +1.5 dBm SCL dB -47 dBc 12.5 dBm Power at 1dB Compression P1dB VDD = +3 V Input Return Loss S11 VDD = +3 V IDD = IOP -7 -3 dB Output Return Loss S22 VDD = +3 V IDD = IOP -16 -10 dB Reverse Isolation S12 VDD = +3 V IDD = IOP -40 -30 dB Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis 11.5 Typ Revised: 11/22/04 Email: [email protected] PRELIMINARY • FMA219 X-BAND LNA MMIC ABSOLUTE MAXIMUM RATINGS1 Parameter Symbol Test Conditions Supply Voltage VDD Supply Current Max Units For any operating current 6 V IDD For VDD < 5V 100 mA RF Input Power PIN For standard bias conditions -5 dBm Storage Temperature TSTG Non-Operating Storage 150 ºC Total Power Dissipation PTOT See De-Rating Note below 600 mW Comp. Under any bias conditions 5 dB Gain Compression 2 Simultaneous Combination of Limits TAmbient = 22°C unless otherwise noted 1 Min -40 2 or more Max. Limits 80 % Users should avoid exceeding 80% of 2 or more Limits simultaneously 2 Notes: • Operating conditions that exceed the Absolute Maximum Ratings will result in permanent damage to the device. • Total Power Dissipation defined as: PTOT ≡ (PDC + PIN) – POUT, where: PDC: DC Bias Power PIN: RF Input Power POUT: RF Output Power • Total Power Dissipation to be de-rated as follows above 22°C: PTOT= 0.6 - (0.004W/°C) x TCARRIER where TCARRIER = carrier or heatsink temperature above 22°C (coefficient of de-rating formula is the Thermal Conductivity) Example: For a 55°C carrier temperature: PTOT = 0.6 - (0.004 x (55 – 22)) = 0.47W • For optimum heatsinking eutectic die attach is recommended; conductive epoxy die attach is acceptable with some degradation in thermal de-rating performance (PTOT = 550mW) • Note on Thermal Resistivity: The nominal value of 250°C/W is stated for the input stage, which will reach temperature limits before the output stage. The aggregate MMIC thermal resistivity is approximately 175°C/W. • HANDLING PRECAUTIONS To avoid damage to the devices care should be exercised during handling. Proper Electrostatic Discharge (ESD) precautions should be observed at all stages of storage, handling, assembly, and testing. These devices should be treated as Class 1A per ESD-STM5.1-1998, Human Body Model. Further information on ESD control measures can be found in MIL-STD-1686 and MIL-HDBK-263. • APPLICATIONS NOTES & DESIGN DATA Applications Notes are available from your local Filtronic Sales Representative or directly from the factory. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: [email protected] PRELIMINARY • FMA219 X-BAND LNA MMIC ASSEMBLY DRAWING Input and output thin film substrates with 50Ω microstrip transmission lines. Substrate thickness 250µm or thinner is recommended. 25µm dia. Au wire (x2) on input and output ports, less than 1000µm length each 75µm nominal gap on each side 150pF capacitor To +VDD 250µm Au ribbon recommended Notes: • Recommended lead bond technique is thermocompression wedge bonding with 0.001” (25µm) diameter wire. The bond tool force shall be 35-38 gram. Bonding stage temperature shall be 230-240°C, heated tool (150-160°C) is recommended. Ultrasonic or thermosonic bonding is not recommended. • The recommended die attach is conductive epoxy, following the manufacturer’s recommended curing procedure. • For eutectic die attach the maximum time at 280-300°C is 60 seconds, and should be kept to a minium. • The supply de-coupling capacitor (150 pF recommended value) should be placed as close to the MMIC as practical. All information and specifications subject to change without notice. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: [email protected] PRELIMINARY • FMA219 X-BAND LNA MMIC TYPICAL RF PERFORMANCE (VDD = +3V, IDD = IOP) FMA219 FREQUENCY RESPONSE SSG, Input / Output Return Loss (dB) 24 20 16 S21 12 8 S11 4 0 S22 -4 -8 -12 -16 -20 5 6 7 8 9 10 11 12 13 14 15 Frequency [GHz] • TYPICAL NOISE FIGURE PERFORMANCE FMA219BF NOISE FIGURE 1.4 1.3 1.2 Noise Figure (dB) 1.1 1.0 0.9 0.8 0.7 0.6 0.5 0.4 7 8 9 10 11 Frequency (GHz) ¾ Multiple traces show typical die variation across a 150mm (6 in.) wafer. Note: Effect of typical bondwire inductance (25 µm dia., 1000 µm length, 2 ea. on input and output ports) is less than 0.5 dB decrease in S21 (11GHz), and no measurable effect on noise figure. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: [email protected] PRELIMINARY • FMA219 X-BAND LNA MMIC POWER TRANSFER CHARACTERISTIC FMA219BF POWER TRANSFER CHARACTERISTIC 16.0 4.0 Pout@7GHz 14.0 3.5 Pout@9GHz Pout@11GHz 3.0 Output Power (dBm) Comp@7GHz Comp@9GHz 10.0 2.5 Comp@11GHz 8.0 2.0 6.0 1.5 4.0 1.0 2.0 0.5 Compression Point, (dB) 12.0 0.0 0.0 -23.0 -21.0 -19.0 -17.0 -15.0 -13.0 -11.0 -9.0 -7.0 -5.0 -3.0 Pin (dBm) • TYPICAL 3RD-ORDER INTERMODULATION PERFORMANCE FMA219 IM PRODUCTS vs. INPUT POWER AT 9.0 GHz -15.00 11.0 Pout Im3, dBc -20.00 Ou 9.0 tp ut Po 7.0 we r (d B 5.0 m) IM Pr od uc -30.00 ts (d Bc -35.00 ) -25.00 3.0 1.0 -19.0 -40.00 -45.00 -17.0 -15.0 -13.0 -11.0 -9.0 -7.0 Input Power (dBm) ¾ Equivalent output IP3 performance exceeds 24 dBm, input IP3 is typically ≥ +2 dBm. Phone: +1 408 850-5790 Fax: +1 408 850-5766 http://www.filtronic.co.uk/semis Revised: 11/22/04 Email: [email protected]