MMUN2211LT1G Series Bias Resistor Transistor NPN Silicon Surface Mount Transistor with Monolithic Bias Resistor Network This new series of digital transistors is designed to replace a single device and its external resistor bias network. The BRT (Bias Resistor Transistor) contains a single transistor with a monolithic bias network consisting of two resistors; a series base resistor and a base-emitter resistor. The BRT eliminates these individual components by integrating them into a single device. The use of a BRT can reduce both system cost and board space. The device is housed in the SOT-23 package which is designed for low power surface mount applications. http://onsemi.com PIN 3 COLLECTOR (OUTPUT) R1 PIN 1 BASE (INPUT) R2 PIN 2 EMITTER (GROUND) Features • Simplifies Circuit Design • Reduces Board Space and Component Count • These Devices are Pb−Free, Halogen Free/BFR Free and are RoHS MARKING DIAGRAM Compliant MAXIMUM RATINGS (TA = 25°C unless otherwise noted) Rating Symbol Value Unit Collector-Base Voltage VCBO 50 Vdc Collector-Emitter Voltage VCEO 50 Vdc IC 100 mAdc Symbol Max Unit PD 246 (Note 1) 400 (Note 2) 1.5 (Note 1) 2.0 (Note 2) mW Collector Current THERMAL CHARACTERISTICS Characteristic Total Device Dissipation TA = 25°C Derate above 25°C °C/W Thermal Resistance, Junction-to-Ambient RqJA 508 (Note 1) 311 (Note 2) °C/W Thermal Resistance, Junction-to-Lead RqJL 174 (Note 1) 208 (Note 2) °C/W Junction and Storage Temperature Range TJ, Tstg −55 to +150 °C SOT−23 CASE 318 STYLE 6 A8x M G G 1 A8x = Specific Device Code M = Date Code* G = Pb−Free Package (Note: Microdot may be in either location) *Date Code orientation and/or overbar may vary depending upon manufacturing location. ORDERING INFORMATION See detailed ordering and shipping information in the package dimensions section on page 17 of this data sheet. Stresses exceeding Maximum Ratings may damage the device. Maximum Ratings are stress ratings only. Functional operation above the Recommended Operating Conditions is not implied. Extended exposure to stresses above the Recommended Operating Conditions may affect device reliability. 1. FR−4 @ minimum pad 2. FR−4 @ 1.0 x 1.0 inch pad © Semiconductor Components Industries, LLC, 2010 October, 2010 − Rev. 11 Publication Order Number: MMUN2211LT1/D MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) Characteristic Symbol Min Typ Max Unit Collector-Base Cutoff Current (VCB = 50 V, IE = 0) ICBO − − 100 nAdc Collector-Emitter Cutoff Current (VCE = 50 V, IB = 0) ICEO − − 500 nAdc IEBO − − − − − − − − − − − − − − − − − − − − − − − − − − 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 4.0 0.1 mAdc Collector-Base Breakdown Voltage (IC = 10 mA, IE = 0) V(BR)CBO 50 − − Vdc Collector-Emitter Breakdown Voltage (Note 3), (IC = 2.0 mA, IB = 0) V(BR)CEO 50 − − Vdc hFE 35 60 80 80 160 160 3.0 8.0 15 80 80 160 160 60 100 140 140 350 350 5.0 15 30 200 150 350 350 − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − − 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 0.25 OFF CHARACTERISTICS Emitter-Base Cutoff Current (VEB = 6.0 V, IC = 0) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G ON CHARACTERISTICS (Note 3) DC Current Gain (VCE = 10 V, IC = 5.0 mA) Collector-Emitter Saturation Voltage (IC = 10 mA, IB = 0.3 mA) (IC = 10 mA, IB = 1 mA) (IC = 10 mA, IB = 5 mA) MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2232LT1G MMUN2238LT1G MMUN2230LT1G MMUN2231LT1G MMUN2241LT1G VCE(sat) 3. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 2 Vdc MMUN2211LT1G Series ELECTRICAL CHARACTERISTICS (TA = 25°C unless otherwise noted) (Continued) Characteristic Symbol Min Typ Max − − − − − − − − − − − − − − − − − − − − − − − − − − 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 4.9 − − − − − − − − − − − − − − − − − − − − − − − − − − R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.88 130 R1/R2 0.8 0.8 0.8 0.17 − − 0.8 0.8 0.8 0.055 0.38 − − 1.0 1.0 1.0 0.21 − − 1.0 1.0 1.0 0.1 0.47 − − 1.2 1.2 1.2 0.25 − − 1.2 1.2 1.2 0.185 0.56 − − Unit ON CHARACTERISTICS (Note 4) Output Voltage (on) (VCC = 5.0 V, VB = 2.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 3.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 5.0 V, RL = 1.0 kW) Output Voltage (off) (VCC = 5.0 V, VB = 0.5 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.05 V, RL = 1.0 kW) (VCC = 5.0 V, VB = 0.25 V, RL = 1.0 kW) Input Resistor Resistor Ratio MMUN2211LT1G MMUN2212LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2213LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2233LT1G MMUN2230LT1G MMUN2234LT1G MMUN2215LT1G MMUN2216LT1G MMUN2231LT1G MMUN2232LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G MMUN2211LT1G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G MMUN2234LT1G MMUN2238LT1G MMUN2241LT1G VOL VOH 4. Pulse Test: Pulse Width < 300 ms, Duty Cycle < 2.0%. http://onsemi.com 3 Vdc Vdc kW MMUN2211LT1G Series VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 250 200 1 IC/IB = 10 TA = −25°C 25°C 75°C 0.1 150 100 0.01 RqJA= 625°C/W 50 0 −50 0 50 100 0.001 150 0 40 60 IC, COLLECTOR CURRENT (mA) Figure 1. Derating Curve Figure 2. VCE(sat) vs. IC VCE = 10 V TA = 75°C 25°C −25°C 100 10 1 10 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz lE = 0 A TA = 25°C 3 2 1 0 100 0 10 10 20 30 50 40 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 4. Output Capcitance 10 25°C 75°C VO = 0.2 V Vin, INPUT VOLTAGE (V) TA = −25°C 1 0.1 0.01 0.001 80 4 1000 Figure 3. DC Current Gain IC, COLLECTOR CURRENT (mA) 20 TA, AMBIENT TEMPERATURE (5°C) Cob, CAPACITANCE (pF) hFE, DC CURRENT GAIN (NORMALIZED) PD, POWER DISSIPATION (MILLIWATTS) TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2211LT1G TA = −25°C 25°C 75°C 1 VO = 5 V 0 1 2 3 4 5 6 7 8 9 0.1 0 10 Vin, INPUT VOLTAGE (VOLTS) Figure 5. Output Current vs. Input Voltage 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 6. Input Voltage vs. Output Current http://onsemi.com 4 50 MMUN2211LT1G Series − 1000 1 TA = −25°C IC/IB = 10 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2212LT1G 25°C 75°C 0.1 0.01 0.001 0 20 60 40 IC, COLLECTOR CURRENT (mA) 80 VCE = 10 V TA = 75°C 10 10 IC, COLLECTOR CURRENT (mA) 1 Figure 7. VCE(sat) vs. IC IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 1 0 10 20 30 50 40 75°C 25°C TA = −25°C 10 1 0.1 0.01 0.001 VO = 5 V 0 2 4 6 8 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 9. Output Capacitance Figure 10. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 100 2 0 TA = −25°C 10 75°C 25°C 1 0.1 0 100 Figure 8. DC Current Gain 4 3 −25°C 25°C 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 11. Input Voltage vs. Output Current http://onsemi.com 5 50 10 MMUN2211LT1G Series 10 IC/IB = 10 TA = −25°C 75°C 25°C 1 0.1 0.01 0 20 40 60 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2213LT1G TA = 75°C 25°C −25°C 100 10 1 10 100 IC, COLLECTOR CURRENT (mA) Figure 12. VCE(sat) vs. IC Figure 13. DC Current Gain 100 0.8 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 0.6 0.4 0.2 10 20 30 25°C 10 TA = −25°C 1 0.1 0.01 0.001 50 40 75°C VO = 5 V 0 2 VR, REVERSE BIAS VOLTAGE (VOLTS) Figure 14. Output Capacitance 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 15. Output Current vs. Input Voltage 100 VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) VCE = 10 V IC, COLLECTOR CURRENT (mA) 1 0 0 1000 TA = −25°C 10 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 16. Input Voltage vs. Output Current http://onsemi.com 6 50 10 MMUN2211LT1G Series 1 IC/IB = 10 TA = −25°C 25°C 0.1 75°C 0.01 0.001 0 20 40 60 IC, COLLECTOR CURRENT (mA) 80 hFE, DC CURRENT GAIN (NORMALIZED) VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2214LT1G 300 TA = 75°C VCE = 10 250 25°C 200 −25°C 150 100 50 0 1 2 4 6 8 10 15 20 40 50 60 70 80 90 100 IC, COLLECTOR CURRENT (mA) Figure 17. VCE(sat) vs. IC Figure 18. DC Current Gain 100 4 2.5 2 1.5 1 0.5 0 0 2 4 6 8 10 15 20 25 30 35 40 45 50 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 25°C TA = −25°C 10 VO = 5 V 1 0 2 4 6 8 Vin, INPUT VOLTAGE (VOLTS) Figure 20. Output Current vs. Input Voltage Figure 19. Output Capacitance 10 TA = −25°C VO = 0.2 V Vin, INPUT VOLTAGE (V) Cob, CAPACITANCE (pF) 3 IC, COLLECTOR CURRENT (mA) f = 1 MHz lE = 0 A TA = 25°C 3.5 25°C 75°C 1 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 21. Input Voltage vs. Output Current http://onsemi.com 7 50 10 MMUN2211LT1G Series 1 1000 IC/IB = 10 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) 25°C 10 1 50 TA = −25°C 100 1 10 IC, COLLECTOR CURRENT (mA) Figure 22. VCE(sat) versus IC 100 IC, COLLECTOR CURRENT (mA) 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 75°C 10 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 24. Output Capacitance 25°C 1 TA = −25°C 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 25°C 75°C VO = 0.2 V 0.1 0 9 10 Figure 25. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 23. DC Current Gain 4.5 0 VCE = 10 V 75°C hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2215LT1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 26. Input Voltage versus Output Current http://onsemi.com 8 50 MMUN2211LT1G Series 1 1000 75°C 0.1 −25°C 25°C 0.01 0.001 0 20 40 30 10 IC, COLLECTOR CURRENT (mA) TA = −25°C 25°C 100 10 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 27. VCE(sat) versus IC 100 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 50 Figure 29. Output Capacitance 75°C 10 25°C TA = −25°C 1 0.1 0.01 0.001 0 VO = 5 V 0 1 2 3 4 5 6 7 8 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 1 75°C 25°C VO = 0.2 V 0.1 0 9 10 Figure 30. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) f = 1 MHz IE = 0 V TA = 25°C 3.5 100 Figure 28. DC Current Gain 4.5 4 VCE = 10 V 75°C IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2216LT1G 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 31. Input Voltage versus Output Current http://onsemi.com 9 50 MMUN2211LT1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2230LT1G 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) 25°C TA = −25°C VCE = 10 V 1 50 75°C 10 1 10 IC, COLLECTOR CURRENT (mA) Figure 32. VCE(sat) versus IC Figure 33. DC Current Gain 4.5 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 34. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 35. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) IC, COLLECTOR CURRENT (mA) 100 4 100 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 36. Input Voltage versus Output Current http://onsemi.com 10 50 MMUN2211LT1G Series 100 1 IC/IB = 10 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2231LT1G 75°C 0.1 −25°C 25°C 0.01 0.001 0 10 20 40 30 IC, COLLECTOR CURRENT (mA) TA = −25°C VCE = 10 V 1 50 1 10 IC, COLLECTOR CURRENT (mA) Figure 37. VCE(sat) versus IC IC, COLLECTOR CURRENT (mA) 100 4 f = 1 MHz IE = 0 V TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 5 10 15 20 25 30 35 40 45 VR, REVERSE BIAS VOLTAGE (VOLTS) 75°C 10 25°C 1 TA = −25°C 0.1 0.01 0.001 50 Figure 39. Output Capacitance VO = 5 V 0 1 2 7 8 3 4 5 6 Vin, INPUT VOLTAGE (VOLTS) TA = −25°C 75°C 1 25°C VO = 0.2 V 0.1 0 9 10 Figure 40. Output Current versus Input Voltage 10 Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) 100 Figure 38. DC Current Gain 4.5 0 25°C 75°C 10 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 41. Input Voltage versus Output Current http://onsemi.com 11 50 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2232LT1G 1000 IC/IB =10 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 TA = 75°C 0.1 25°C −25°C 0.01 0.001 4 8 12 16 20 24 VCE = 10 V TA = 75°C 100 10 1 28 0 25 IC, COLLECTOR CURRENT (mA) 75 100 IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 5 4 3 2 1 10 20 30 40 50 60 VO = 5 V 75°C 25°C 10 1 TA = −25°C 0.1 0.01 0 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 44. Output Capacitance Figure 45. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 125 Figure 43. DC Current Gain 6 Cob, CAPACITANCE (pF) 50 IC, COLLECTOR CURRENT (mA) Figure 42. VCE(sat) vs. IC 0 25°C −25°C VO = 0.2 V TA = −25°C 75°C 1 0.1 0 25°C 10 20 IC, COLLECTOR CURRENT (mA) Figure 46. Output Voltage vs. Input Current http://onsemi.com 12 30 8 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2233LT1G 1000 IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 25°C TA = −25°C TA = −25°C 10 VCE = 10 V 0.001 2 7 12 17 27 22 1 32 100 10 IC, COLLECTOR CURRENT (mA) Figure 47. VCE(sat) vs. IC Figure 48. DC Current Gain IC, COLLECTOR CURRENT (mA) 100 f = 1 MHz IE = 0 A TA = 25°C 3.5 3 2.5 2 1.5 1 0.5 0 10 20 30 40 50 60 75°C TA = −25°C 10 1 0.1 0.01 25°C 0 VO = 5 V 2 4 6 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 49. Output Capacitance Figure 50. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 1 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) 25°C 100 75°C 0.01 75°C VO = 0.2 V TA = −25°C 25°C 75°C 1 0.1 0 6 24 12 18 IC, COLLECTOR CURRENT (mA) Figure 51. Input Voltage vs. Output Current http://onsemi.com 13 30 8 MMUN2211LT1G Series 1000 1 VCE = 10 V IC/IB = 10 0.1 75°C −25°C 0.01 0.001 hFE, DC CURRENT GAIN VCE(sat), COLLECTOR VOLTAGE (VOLTS) TYPICAL ELECTRICAL CHARACTERISTICS — MMUN2234LT1G 0 5 25°C 10 15 25 20 IC, COLLECTOR CURRENT (mA) 75°C 100 1 10 IC, COLLECTOR CURRENT (mA) 100 IC, COLLECTOR CURRENT (mA) Figure 53. DC Current Gain TBD VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 54. Output Capacitance Figure 55. Output Current versus Input Voltage Vin, INPUT VOLTAGE (VOLTS) Cob, CAPACITANCE (pF) Figure 52. VCE(sat) versus IC TBD 25°C 10 1 30 TA = −25°C TBD IC, COLLECTOR CURRENT (mA) Figure 56. Input Voltage versus Output Current http://onsemi.com 14 MMUN2211LT1G Series TYPICAL ELECTRICAL CHARACTERISTICS − MMUN2238LT1G 1000 75°C IC/IB = 10 0.1 hFE, DC CURRENT GAIN VCE(sat), MAXIMUM COLLECTOR VOLTAGE (V) 1 75°C 25°C TA = −25°C 0.01 25°C 10 VCE = 10 V 0.001 0 20 40 60 100 80 1 10 Figure 57. VCE(sat) vs. IC Figure 58. DC Current Gain 100 IC, COLLECTOR CURRENT (mA) f = 1 Mhz TA = 25°C 3 2.5 2 1.5 1 0.5 10 30 20 40 10 25°C 1 TA = −25°C 0.1 0.01 50 75°C VO = 5 V 0 1 2 3 4 VR, REVERSE BIAS VOLTAGE (VOLTS) Vin, INPUT VOLTAGE (VOLTS) Figure 59. Output Capacitance Figure 60. Output Current vs. Input Voltage 10 Vin, INPUT VOLTAGE (V) 0 100 IC, COLLECTOR CURRENT (mA) 3.5 0 1 IC, COLLECTOR CURRENT (mA) 4 Cob, CAPACITANCE (pF) TA = −25°C 100 VO = 0.2 V 1 25°C TA = −25°C 75°C 0.1 0 10 20 30 40 IC, COLLECTOR CURRENT (mA) Figure 61. Input Voltage vs. Output Current http://onsemi.com 15 50 5 MMUN2211LT1G Series TYPICAL APPLICATIONS FOR NPN BRTs +12 V ISOLATED LOAD FROM mP OR OTHER LOGIC Figure 62. Level Shifter: Connects 12 or 24 Volt Circuits to Logic +12 V VCC OUT IN LOAD Figure 63. Open Collector Inverter: Inverts the Input Signal Figure 64. Inexpensive, Unregulated Current Source http://onsemi.com 16 MMUN2211LT1G Series ORDERING INFORMATION Device Marking MMUN2211LT1G MMUN2211LT3G MMUN2212LT1G MMUN2213LT1G MMUN2214LT1G MMUN2215LT1G MMUN2216LT1G MMUN2230LT1G MMUN2231LT1G MMUN2232LT1G MMUN2233LT1G A8A A8B A8C A8D A8E A8F A8G A8H A8J A8K MMUN2234LT1G MMUN2234LT3G A8L R1(k) R2(k) Package Shipping† 10 10 SOT−23 (Pb−Free) 3000 / Tape & Reel 10 10 SOT−23 (Pb−Free) 10,000 / Tape & Reel 22 22 SOT−23 (Pb−Free) 47 47 SOT−23 (Pb−Free) 10 47 SOT−23 (Pb−Free) 10 ∞ SOT−23 (Pb−Free) 4.7 ∞ SOT−23 (Pb−Free) 1.0 1.0 SOT−23 (Pb−Free) 2.2 2.2 SOT−23 (Pb−Free) 4.7 4.7 SOT−23 (Pb−Free) 4.7 47 SOT−23 (Pb−Free) 22 47 SOT−23 (Pb−Free) 22 47 SOT−23 (Pb−Free) MMUN2238LT1G A8R 2.2 ∞ SOT−23 (Pb−Free) MMUN2241LT1G A8U 100 ∞ SOT−23 (Pb−Free) 3000 / Tape & Reel 10,000 / Tape & Reel 3000 / Tape & Reel †For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging Specifications Brochure, BRD8011/D. http://onsemi.com 17 MMUN2211LT1G Series PACKAGE DIMENSIONS SOT−23 (TO−236) CASE 318−08 ISSUE AP NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. MAXIMUM LEAD THICKNESS INCLUDES LEAD FINISH THICKNESS. MINIMUM LEAD THICKNESS IS THE MINIMUM THICKNESS OF BASE MATERIAL. 4. DIMENSIONS D AND E DO NOT INCLUDE MOLD FLASH, PROTRUSIONS, OR GATE BURRS. D SEE VIEW C 3 HE E DIM A A1 b c D E e L L1 HE q c 1 2 e b 0.25 q A L A1 MIN 0.89 0.01 0.37 0.09 2.80 1.20 1.78 0.10 0.35 2.10 0° MILLIMETERS NOM MAX 1.00 1.11 0.06 0.10 0.44 0.50 0.13 0.18 2.90 3.04 1.30 1.40 1.90 2.04 0.20 0.30 0.54 0.69 2.40 2.64 −−− 10 ° MIN 0.035 0.001 0.015 0.003 0.110 0.047 0.070 0.004 0.014 0.083 0° INCHES NOM 0.040 0.002 0.018 0.005 0.114 0.051 0.075 0.008 0.021 0.094 −−− MAX 0.044 0.004 0.020 0.007 0.120 0.055 0.081 0.012 0.029 0.104 10° STYLE 6: PIN 1. BASE 2. EMITTER 3. COLLECTOR L1 VIEW C SOLDERING FOOTPRINT* 0.95 0.037 0.95 0.037 2.0 0.079 0.9 0.035 0.8 0.031 SCALE 10:1 mm Ǔ ǒinches *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. ON Semiconductor and are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. “Typical” parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. 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This literature is subject to all applicable copyright laws and is not for resale in any manner. PUBLICATION ORDERING INFORMATION LITERATURE FULFILLMENT: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303−675−2175 or 800−344−3860 Toll Free USA/Canada Fax: 303−675−2176 or 800−344−3867 Toll Free USA/Canada Email: [email protected] N. American Technical Support: 800−282−9855 Toll Free USA/Canada Europe, Middle East and Africa Technical Support: Phone: 421 33 790 2910 Japan Customer Focus Center Phone: 81−3−5773−3850 http://onsemi.com 18 ON Semiconductor Website: www.onsemi.com Order Literature: http://www.onsemi.com/orderlit For additional information, please contact your local Sales Representative MMUN2211LT1/D