MUN5211DW Series Surface Mount Dual Bias Resistor Transistor NPN Silicon 2 3 1 6 5 P b Lead(Pb)-Free 1 4 5 6 NPN+NPN Maximum Ratings Symbol VCEO VCBO IC Rating Collector-Emitter Voltage Collector-Base Voltage Collector Current Thermal Characteristics Characteristics (1) 3 SOT-363(SC-88) Value 50 50 100 Unit Vdc Vdc mAdc Symbol Max Unit PD 187 (2) 256 (3) 1.5 (2) 2.0 (3) mW Total Device Dissipation TA=25 C mW/ C R θJA 670(2) 490(3) C/W TJ,Tstg -55 to +150 C Thermal Resistance, Junction to Ambient Junction and Storage, Temperature 2 4 I 1.One Junction Heated 2.FR-4 @ Minimum Pad 3.FR-4 @ 1.0 I 1.0 Inch Pad Device Marking and Resistor Values Marking R1(K) R2(K) Device Marking R1(K) R2(K) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW 7A 7B 7C 7D 7E 7F 7G 10 22 47 10 10 4.7 1.0 10 22 47 47 MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW 7H 7J 7K 7L 7M 7N 7P 2.2 4.7 4.7 22 2.2 100 47 2.2 4.7 47 47 47 100 22 WEITRON http://www.weitron.com.tw 8 8 Device 1.0 1/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C Unless Otherwise noted) Characteristics Symbol Min Max Unit Collector-Base Cutoff Current (VCB=50Vdc, I E =0) I CBO - 100 nAdc Collector-Emitter Cutoff Current(VCE=50Vdc, IB =0) I CEO - 500 nAdc Emitter-Base Cutoff Current (VEB =6.0Vdc, IC=0) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW I EBO - 0.5 0.2 0.1 0.2 0.9 1.9 4.3 2.3 1.5 0.18 0.13 0.2 0.05 0.13 mAdc Collector-Base Breakdown Voltage (I C =10uAdc, IE =0) V(BR)CBO 50 - Vdc Collector-Emitter Breakdown Voltage(4) (I C=2.0mA, I B=0) V(BR)CEO 50 - Vdc Off C har acter istics 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% WEITRON http://www.weitron.com.tw 2/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ HFE 35 60 80 80 160 160 3.0 8.0 15 80 80 80 80 80 60 100 140 140 350 350 5.0 15 30 200 150 140 150 140 - - 0.25 Vdc Vdc Vdc Max Unit On Characteristics (4) DC Current Gain (IC= 5.0 mAdc, VCE=10Vdc) MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Collector-Emitter Saturation Voltage (IC= 10 mAdc, IB= 0.3mAdc) (IC= 10 mAdc, IB= 5.0mAdc) MUN5230DW/MUN5231DW (IC= 10 mAdc, IB= 1.0mAdc) MUN5215DW/MUN5216DW VCE(sat) - - MUN5232DW/MUN5233DW/MUN5234DW Output Voltage (on) (VCC = 5.0 V, VB= 2.5V, R L =1.0 k ) (VCC = 5.0 V, VB= 3.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 5.5V, RL =1.0 k ) (VCC = 5.0 V, VB= 4.0V, R L =1.0 k ) Output Voltage (off ) (VCC = 5.0 V, VB= 0.5V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.05V, R L =1.0 k ) (VCC = 5.0 V, VB= 0.25V, R L =1.0 k ) MUN5211DW MUN5212DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5213DW MUN5236DW MUN5237DW VOL VOL - - - - - - - - - - - - - - - - - - - - - - - - - - - - 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 0.2 4.9 - - MUN5230DW MUN5215DW MUN5216DW MUN5233DW 4. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% WEITRON http://www.weitron.com.tw 3/6 Rev.A 29-Dec-05 MUN5211DW Series Electrical Characteristics (TA=25 C unless otherwise noted) (Countinued) Characteristics Symbol Min Typ Max Unit R1 7.0 15.4 32.9 7.0 7.0 3.3 0.7 1.5 3.3 3.3 15.4 1.54 70 32.9 10 22 47 10 10 4.7 1.0 2.2 4.7 4.7 22 2.2 100 47 13 28.6 61.1 13 13 6.1 1.3 2.9 6.1 6.1 28.6 2.86 130 61.1 k R1/R2 0.8 0.17 0.8 0.055 0.38 0.038 1.7 1.0 0.21 1.0 0.1 0.47 0.047 2.1 1.2 0.25 1.2 0.185 0.56 0.056 2.6 On Characteristics (5) Input Resistor MUN5211DW MUN5212DW MUN5213DW MUN5214DW MUN5215DW MUN5216DW MUN5230DW MUN5231DW MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5236DW MUN5237DW Resistor Ratio MUN5211DW/MUN5212DW MUN5213DW/MUN5236DW MUN5214DW MUN5215DW/MUN5216DW MUN5230DW/MUN5231DW/MUN5232DW MUN5233DW MUN5234DW MUN5235DW MUN5237DW 5. Pulse Test: Pulse Width < 300 us, Duty Cycle < 2.0% WEITRON http://www.weitron.com.tw 4/6 Rev.A 29-Dec-05 MUN5211DW Series VCE(sat) , COLLECTOR VOLTAGE (VOLTS) P D , P OWE R DIS S IPAT ION (mW) 300 250 200 150 100 R θJ A = 833 C /W 50 0 - 50 0 50 100 T A , AMB IE NT T E MP E R AT UR E ( C ) 1 IC/IB = 10 25 C 0.1 75 C 0.01 0.001 150 0 20 40 IC , COLLECTOR CURRENT (m A) FIG 1. Derating Curve TA = 75 C 25 C -25 C Cob , CAPACITANCE (pF) hFE , DC CURRENT GAIN (NORMALIZED) 4 VCE = 10 V 100 10 50 FIG 2. VCE(sat) versus IC 1000 1 10 IC , COLLECTOR CURRENT (m A) 3 2 1 0 100 f = 1 MHz IE = 0 V TA = 25 C 0 10 20 30 40 VR , REVERSE BIAS VOL TAGE (VOLTS) FIG 3. DC Current Gain 100 10 VO = 0.2 V V in, INPUT VOLTAGE (VOLTS) TA = -25 C 10 50 FIG 4. Output Capacitance 25 C 75 C IC, COLLECTOR CURRENT (mA) TA = -25 C 1 0.1 0.01 TA = -25 C 25 C 75 C 1 VO = 5 V 0.001 0 1 2 3 4 5 6 7 Vin, INPUT VOLTAGE (VOLTS) 8 9 0.1 10 FIG 5. Output Current versus Input Voltage WEITRON http://www.weitron.com.tw 0 10 40 20 30 IC, COLLECTOR CURRENT (m A) 50 FIG 6. Input Voltage versus Output Current 5/6 Rev.A 29-Dec-05 MUN5211DW Series SOT-363 Package Outline Dimensions Unit:mm A 6 5 SOT-363 4 B C 1 2 D 3 E H K J WEITRON http://www.weitron.com.tw L M 6/6 Dim A B C D E H J K L M Min Max 0.10 0.30 1.15 1.35 2.00 2.20 0.65 REF 0.30 0.40 1.80 2.20 0.10 0.80 1.10 0.25 0.40 0.10 0.25 Rev.A 29-Dec-05