IRF740, SiHF740 Vishay Siliconix Power MOSFET FEATURES PRODUCT SUMMARY VDS (V) • Dynamic dV/dt Rating 400 RDS(on) (Ω) VGS = 10 V Qg (Max.) (nC) 63 • Fast Switching Qgs (nC) 9.0 • Ease of Paralleling 32 • Simple Drive Requirements Qgd (nC) Configuration Single COMPLIANT DESCRIPTION TO-220AB Third generation Power MOSFETs from Vishay provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost-effectiveness. The TO-220AB package is universally preferred for all commercial-industrial applications at power dissipation levels to approximately 50 W. The low thermal resistance and low package cost of the TO-220AB contribute to its wide acceptance throughout the industry. G D RoHS* • Compliant to RoHS Directive 2002/95/EC D G Available • Repetitive Avalanche Rated 0.55 S S N-Channel MOSFET ORDERING INFORMATION Package TO-220AB IRF740PbF SiHF740-E3 IRF740 SiHF740 Lead (Pb)-free SnPb ABSOLUTE MAXIMUM RATINGS (TC = 25 °C, unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage VDS 400 Gate-Source Voltage VGS ± 20 Continuous Drain Current VGS at 10 V TC = 25 °C TC = 100 °C Pulsed Drain Currenta ID UNIT V 10 6.3 A IDM 40 1.0 W/°C Single Pulse Avalanche Energyb EAS 520 mJ Repetitive Avalanche Currenta IAR 10 A Repetitive Avalanche Energya EAR 13 mJ Linear Derating Factor Maximum Power Dissipation TC = 25 °C Peak Diode Recovery dV/dtc Operating Junction and Storage Temperature Range Soldering Recommendations (Peak Temperature) Mounting Torque for 10 s 6-32 or M3 screw PD 125 W dV/dt 4.0 V/ns TJ, Tstg - 55 to + 150 300d °C 10 lbf · in 1.1 N·m Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. VDD = 50 V, starting TJ = 25 °C, L = 9.1 mH, Rg = 25 Ω, IAS = 10 A (see fig. 12). c. ISD ≤ 10 A, dI/dt ≤ 120 A/μs, VDD ≤ VDS, TJ ≤ 150 °C. d. 1.6 mm from case. * Pb containing terminations are not RoHS compliant, exemptions may apply Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 www.vishay.com 1 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix THERMAL RESISTANCE RATINGS PARAMETER SYMBOL TYP. MAX. Maximum Junction-to-Ambient RthJA - 62 Case-to-Sink, Flat, Greased Surface RthCS 0.50 - Maximum Junction-to-Case (Drain) RthJC - 1.0 UNIT °C/W SPECIFICATIONS (TJ = 25 °C, unless otherwise noted) PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNIT VDS VGS = 0 V, ID = 250 μA 400 - - V ΔVDS/TJ Reference to 25 °C, ID = 1 mA - 0.49 - V/°C VGS(th) VDS = VGS, ID = 250 μA 2.0 - 4.0 V Gate-Source Leakage IGSS VGS = ± 20 V - - ± 100 nA Zero Gate Voltage Drain Current IDSS VDS = 400 V, VGS = 0 V - - 25 VDS = 320 V, VGS = 0 V, TJ = 125 °C - - 250 Static Drain-Source Breakdown Voltage VDS Temperature Coefficient Gate-Source Threshold Voltage ID = 6.0 Ab μA - - 0.55 Ω gfs VDS = 50 V, ID = 6.0 Ab 5.8 - - S Input Capacitance Ciss VGS = 0 V, - 1400 - Output Capacitance Coss VDS = 25 V, - 330 - Reverse Transfer Capacitance Crss f = 1.0 MHz, see fig. 5 - 120 - Total Gate Charge Qg - - 63 - - 9.0 Drain-Source On-State Resistance Forward Transconductance RDS(on) VGS = 10 V Dynamic VGS = 10 V ID = 10 A, VDS = 320 V, pF Gate-Source Charge Qgs Gate-Drain Charge Qgd - - 32 Turn-On Delay Time td(on) - 14 - VDD = 200 V, ID = 10 A - 27 - Rg = 9.1 Ω, RD = 20 Ω, see fig. 10b - 50 - - 24 - - 4.5 - - 7.5 - - - 10 - - 40 - - 2.0 - 370 790 ns - 3.8 8.2 μC Rise Time Turn-Off Delay Time Fall Time tr td(off) see fig. 6 and 13b tf Internal Drain Inductance LD Internal Source Inductance LS Between lead, 6 mm (0.25") from package and center of die contact D nC ns nH G S Drain-Source Body Diode Characteristics Continuous Source-Drain Diode Current IS Pulsed Diode Forward Currenta ISM Body Diode Voltage VSD Body Diode Reverse Recovery Time trr Body Diode Reverse Recovery Charge Qrr Forward Turn-On Time ton MOSFET symbol showing the integral reverse p - n junction diode D A G TJ = 25 °C, IS = 10 A, VGS = 0 S Vb TJ = 25 °C, IF = 10 A, dI/dt = 100 A/μsb V Intrinsic turn-on time is negligible (turn-on is dominated by LS and LD) Notes a. Repetitive rating; pulse width limited by maximum junction temperature (see fig. 11). b. Pulse width ≤ 300 μs; duty cycle ≤ 2 %. www.vishay.com 2 Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix TYPICAL CHARACTERISTICS (25 °C, unless otherwise noted) VGS 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 101 100 4.5 V 25 °C 100 20 µs Pulse Width VDS = 50 V 20 µs Pulse Width TC = 25 °C 100 10-1 10-1 101 4 VDS, Drain-to-Source Voltage (V) 91054_01 4.5 V 100 20 µs Pulse Width TC = 150 °C 10-1 91054_02 100 101 VDS, Drain-to-Source Voltage (V) Fig. 2 - Typical Output Characteristics, TC = 150 °C Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 6 7 8 9 10 Fig. 3 - Typical Transfer Characteristics RDS(on), Drain-to-Source On Resistance (Normalized) ID, Drain Current (A) 101 5 VGS, Gate-to-Source Voltage (V) 91054_03 Fig. 1 - Typical Output Characteristics, TC = 25 °C VGS Top 15 V 10 V 8.0 V 7.0 V 6.0 V 5.5 V 5.0 V Bottom 4.5 V 150 °C 101 ID, Drain Current (A) ID, Drain Current (A) Top 91054_04 3.0 2.5 ID = 10 A VGS = 10 V 2.0 1.5 1.0 0.5 0.0 - 60 - 40 - 20 0 20 40 60 80 100 120 140 160 TJ, Junction Temperature (°C) Fig. 4 - Normalized On-Resistance vs. Temperature www.vishay.com 3 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix 2500 Capacitance (pF) 2000 1500 ISD, Reverse Drain Current (A) VGS = 0 V, f = 1 MHz Ciss = Cgs + Cgd, Cds Shorted Crss = Cgd Coss = Cds + Cgd Ciss 1000 Coss 500 Crss 101 VDS, Drain-to-Source Voltage (V) 91054_05 VGS = 0 V 0.70 1.10 5 VDS = 320 V Operation in this area limited by RDS(on) 2 16 VDS = 200 V VDS = 80 V 8 4 102 5 10 µs 2 10 100 µs 5 1 ms 2 1 10 ms 5 For test circuit see figure 13 0 TC = 25 °C TJ = 150 °C Single Pulse 2 0.1 0 91054_06 15 30 45 60 75 QG, Total Gate Charge (nC) Fig. 6 - Typical Gate Charge vs. Drain-to-Source Voltage www.vishay.com 4 1.50 1.30 103 ID = 10 A 12 0.90 VSD, Source-to-Drain Voltage (V) Fig. 7 - Typical Source-Drain Diode Forward Voltage ID, Drain Current (A) VGS, Gate-to-Source Voltage (V) 100 91054_07 Fig. 5 - Typical Capacitance vs. Drain-to-Source Voltage 20 25 °C 10-1 0.50 0 100 150 °C 101 0.1 91054_08 2 5 1 2 5 10 2 5 102 2 5 103 VDS, Drain-to-Source Voltage (V) Fig. 8 - Maximum Safe Operating Area Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix RD VDS 10 ID, Drain Current (A) VGS 8 D.U.T. RG 6 + - VDD 10 V Pulse width ≤ 1 µs Duty factor ≤ 0.1 % 4 Fig. 10a - Switching Time Test Circuit 2 VDS 0 25 50 75 100 125 150 90 % TC, Case Temperature (°C) 91054_09 Fig. 9 - Maximum Drain Current vs. Case Temperature 10 % VGS td(on) td(off) tf tr Fig. 10b - Switching Time Waveforms Thermal Response (ZthJC) 10 1 0 - 0.5 PDM 0.2 0.1 0.1 t1 0.05 t2 Notes: 1. Duty Factor, D = t1/t2 2. Peak Tj = PDM x ZthJC + TC Single Pulse (Thermal Response) 0.02 0.01 10-2 10-5 91054_11 10-4 10-3 10-2 0.1 1 10 t1, Rectangular Pulse Duration (S) Fig. 11 - Maximum Effective Transient Thermal Impedance, Junction-to-Case Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 www.vishay.com 5 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix L Vary tp to obtain required IAS VDS VDS tp VDD D.U.T RG + - IAS V DD VDS 10 V 0.01 Ω tp IAS Fig. 12a - Unclamped Inductive Test Circuit Fig. 12b - Unclamped Inductive Waveforms EAS, Single Pulse Energy (mJ) 1200 ID 4.5 A 5.3 A Bottom 10 A Top 1000 800 600 400 200 0 VDD = 50 V 25 91054_12c 50 75 100 125 150 Starting TJ, Junction Temperature (°C) Fig. 12c - Maximum Avalanche Energy vs. Drain Current Current regulator Same type as D.U.T. 50 kΩ QG 10 V 12 V 0.2 µF 0.3 µF QGS QGD + D.U.T. VG - VDS VGS 3 mA Charge IG ID Current sampling resistors Fig. 13a - Basic Gate Charge Waveform www.vishay.com 6 Fig. 13b - Gate Charge Test Circuit Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 IRF740, SiHF740 Vishay Siliconix Peak Diode Recovery dV/dt Test Circuit + D.U.T. Circuit layout considerations • Low stray inductance • Ground plane • Low leakage inductance current transformer + - - Rg • • • • + dV/dt controlled by Rg Driver same type as D.U.T. ISD controlled by duty factor “D” D.U.T. - device under test + - VDD Driver gate drive P.W. Period D= P.W. Period VGS = 10 Va D.U.T. lSD waveform Reverse recovery current Body diode forward current dI/dt D.U.T. VDS waveform Diode recovery dV/dt Re-applied voltage Inductor current VDD Body diode forward drop Ripple ≤ 5 % ISD Note a. VGS = 5 V for logic level devices Fig. 14 - For N-Channel Vishay Siliconix maintains worldwide manufacturing capability. Products may be manufactured at one of several qualified locations. Reliability data for Silicon Technology and Package Reliability represent a composite of all qualified locations. For related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?91054. Document Number: 91054 S11-0507-Rev. C, 21-Mar-11 www.vishay.com 7 This datasheet is subject to change without notice. THE PRODUCT DESCRIBED HEREIN AND THIS DATASHEET ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Package Information www.vishay.com Vishay Siliconix TO-220-1 A E DIM. Q H(1) D 3 2 L(1) 1 M* L b(1) INCHES MIN. MAX. MIN. MAX. A 4.24 4.65 0.167 0.183 b 0.69 1.02 0.027 0.040 b(1) 1.14 1.78 0.045 0.070 F ØP MILLIMETERS c 0.36 0.61 0.014 0.024 D 14.33 15.85 0.564 0.624 E 9.96 10.52 0.392 0.414 e 2.41 2.67 0.095 0.105 e(1) 4.88 5.28 0.192 0.208 F 1.14 1.40 0.045 0.055 H(1) 6.10 6.71 0.240 0.264 0.115 J(1) 2.41 2.92 0.095 L 13.36 14.40 0.526 0.567 L(1) 3.33 4.04 0.131 0.159 ØP 3.53 3.94 0.139 0.155 Q 2.54 3.00 0.100 0.118 ECN: X15-0364-Rev. C, 14-Dec-15 DWG: 6031 Note • M* = 0.052 inches to 0.064 inches (dimension including protrusion), heatsink hole for HVM C b e J(1) e(1) Package Picture ASE Revison: 14-Dec-15 Xi’an Document Number: 66542 1 For technical questions, contact: [email protected] THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000 Legal Disclaimer Notice www.vishay.com Vishay Disclaimer ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE. Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other disclosure relating to any product. Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or the continuing production of any product. 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No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners. © 2017 VISHAY INTERTECHNOLOGY, INC. ALL RIGHTS RESERVED Revision: 08-Feb-17 1 Document Number: 91000