StrongIRFET™ IRFB7734PbF IRFS7734PbF IRFSL7734PbF HEXFET® Power MOSFET Application Brushed motor drive applications BLDC motor drive applications Battery powered circuits Half-bridge and full-bridge topologies Synchronous rectifier applications Resonant mode power supplies OR-ing and redundant power switches DC/DC and AC/DC converters DC/AC inverters VDSS 75V RDS(on) typ. 2.8m max 3.5m D G S ID 183A D D Benefits Improved gate, avalanche and dynamic dV/dt ruggedness Fully characterized capacitance and avalanche SOA Enhanced body diode dV/dt and dI/dt capability Lead-free, RoHS compliant S D G S G TO-220AB IRFB7734PbF IRFB7734PbF IRFSL7734PbF IRFS7734PbF TO-220 TO-262 D2-Pak S Source Orderable Part Number IRFB7734PbF IRFSL7734PbF IRFS7734PbF IRFS7734TRLPbF 200 10 ID = 100A 160 8 T J = 125°C 6 4 120 80 40 T J = 25°C 0 2 4 6 8 10 12 14 16 18 20 VGS, Gate -to -Source Voltage (V) Fig 1. Typical On-Resistance vs. Gate Voltage 1 D Drain Standard Pack Form Quantity Tube 50 Tube 50 Tube 50 Tape and Reel Left 800 ID, Drain Current (A) RDS(on), Drain-to -Source On Resistance (m ) Package Type S D TO-262 IRFSL7734PbF D2Pak IRFS7734PbF G Gate Base part number G www.irf.com © 2014 International Rectifier 25 50 75 100 125 150 175 TC , Case Temperature (°C) Fig 2. Maximum Drain Current vs. Case Temperature Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF Absolute Maximum Rating Symbol ID @ TC = 25°C ID @ TC = 100°C IDM PD @TC = 25°C VGS TJ TSTG Parameter Continuous Drain Current, VGS @ 10V Continuous Drain Current, VGS @ 10V Pulsed Drain Current Maximum Power Dissipation Linear Derating Factor Gate-to-Source Voltage Operating Junction and Storage Temperature Range Soldering Temperature, for 10 seconds (1.6mm from case) Mounting Torque, 6-32 or M3 Screw Avalanche Characteristics Symbol Parameter EAS (Thermally limited) Single Pulse Avalanche Energy EAS (Thermally limited) Single Pulse Avalanche Energy IAR Avalanche Current Repetitive Avalanche Energy EAR Thermal Resistance Symbol Parameter Junction-to-Case RJC Case-to-Sink, Flat Greased Surface (TO-220) RCS Junction-to-Ambient (TO-220) RJA Junction-to-Ambient (PCB Mount) (D2Pak) RJA Static @ TJ = 25°C (unless otherwise specified) Symbol Parameter V(BR)DSS Drain-to-Source Breakdown Voltage V(BR)DSS/TJ Breakdown Voltage Temp. Coefficient RDS(on) Static Drain-to-Source On-Resistance VGS(th) Gate Threshold Voltage IDSS Drain-to-Source Leakage Current IGSS RG Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage Gate Resistance Min. 75 ––– ––– ––– 2.1 ––– ––– ––– ––– ––– Max. 183 130 650 290 2.0 ± 20 Units A W W/°C V -55 to + 175 °C 300 10 lbf·in (1.1 N·m) Units mJ Max. 350 670 See Fig 15, 16, 23a, 23b Typ. ––– 0.50 ––– ––– Max. 0.51 ––– 62 40 A mJ Units °C/W Typ. Max. Units Conditions ––– ––– V VGS = 0V, ID = 250µA 50 ––– mV/°C Reference to 25°C, ID = 1mA 2.8 3.5 m VGS = 10V, ID = 100A 3.5 ––– VGS = 6.0V, ID = 50A ––– 3.7 V VDS = VGS, ID = 250µA ––– 1.0 VDS =75 V, VGS = 0V µA ––– 150 VDS =75V,VGS = 0V,TJ =125°C ––– 100 VGS = 20V nA ––– -100 VGS = -20V 2.0 ––– Notes: Repetitive rating; pulse width limited by max. junction temperature. Limited by TJmax, starting TJ = 25°C, L = 70µH, RG = 50, IAS = 100A, VGS =10V. ISD 100A, di/dt 950A/µs, VDD V(BR)DSS, TJ 175°C. Pulse width 400µs; duty cycle 2%. Coss eff. (TR) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% VDSS. Coss eff. (ER) is a fixed capacitance that gives the same energy as Coss while VDS is rising from 0 to 80% VDSS. R is measured at TJ approximately 90°C. Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V. When mounted on 1" square PCB (FR-4 or G-10 Material). For recommended footprint and soldering techniques refer to application note #AN-994: http://www.irf.com/technical-info/appnotes/an-994.pdf 2 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF Dynamic Electrical Characteristics @ TJ = 25°C (unless otherwise specified) Symbol gfs Qg Qgs Qgd Qsync td(on) tr Parameter Forward Transconductance Total Gate Charge Gate-to-Source Charge Gate-to-Drain Charge Total Gate Charge Sync. (Qg – Qgd) Turn-On Delay Time Rise Time Min. 250 ––– ––– ––– ––– ––– ––– Typ. ––– 180 45 55 125 20 123 td(off) Turn-Off Delay Time ––– 124 tf Ciss Coss Crss Fall Time Input Capacitance Output Capacitance Reverse Transfer Capacitance Effective Output Capacitance (Energy Related) Output Capacitance (Time Related) ––– ––– ––– ––– 100 10150 816 500 ––– 707 ––– VGS = 0V, VDS = 0V to 60V ––– 916 ––– VGS = 0V, VDS = 0V to 60V Parameter Continuous Source Current (Body Diode) Pulsed Source Current (Body Diode) Min. Typ. Max. Units ––– ––– 183 ––– ––– 650 Conditions MOSFET symbol showing the integral reverse p-n junction diode. VSD Diode Forward Voltage ––– ––– 1.2 dv/dt Peak Diode Recovery dv/dt trr Reverse Recovery Time Qrr Reverse Recovery Charge IRRM Reverse Recovery Current ––– ––– ––– ––– ––– ––– 5.1 47 51 76 96 2.8 ––– ––– ––– ––– ––– ––– Coss eff.(ER) Coss eff.(TR) Max. Units Conditions ––– S VDS = 10V, ID =100A 270 ID = 100A ––– VDS = 38V nC ––– VGS = 10V ––– ––– VDD = 38V ––– ID = 100A ns ––– RG= 2.7 VGS = 10V ––– ––– ––– ––– pF VGS = 0V VDS = 25V ƒ = 1.0MHz Diode Characteristics Symbol IS ISM 3 www.irf.com © 2014 International Rectifier A V D G S TJ = 25°C,IS = 100A,VGS = 0V V/ns TJ = 175°C,IS =100A,VDS = 64V TJ = 25°C VDD = 64V ns TJ = 125°C IF = 100A, TJ = 25°C di/dt = 100A/µs nC TJ = 125°C A TJ = 25°C Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF 1000 1000 VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V BOTTOM VGS 15V 10V 8.0V 7.0V 6.0V 5.5V 5.0V 4.5V TOP ID, Drain-to-Source Current (A) ID, Drain-to-Source Current (A) TOP BOTTOM 4.5V 60µs PULSE WIDTH 60µs PULSE WIDTH Tj = 25°C Tj = 175°C 10 10 0.1 1 10 100 0.1 10 100 Fig 4. Typical Output Characteristics Fig 3. Typical Output Characteristics 1000 2.4 100 TJ = 175°C 10 TJ = 25°C 1 V DS = 25V 60µs PULSE WIDTH RDS(on) , Drain-to-Source On Resistance (Normalized) ID, Drain-to-Source Current (A) 1 V DS, Drain-to-Source Voltage (V) V DS, Drain-to-Source Voltage (V) ID = 100A V GS = 10V 2.0 1.6 1.2 0.8 0.4 0.1 2.0 3.0 4.0 5.0 6.0 -60 -40 -20 0 20 40 60 80 100120140160180 7.0 TJ , Junction Temperature (°C) V GS, Gate-to-Source Voltage (V) Fig 6. Normalized On-Resistance vs. Temperature Fig 5. Typical Transfer Characteristics 100000 14.0 VGS = 0V, f = 1 MHZ Ciss = C gs + Cgd, C ds SHORTED Crss = C gd V GS, Gate-to-Source Voltage (V) ID= 100A Coss = Cds + Cgd C, Capacitance (pF) 4.5V 100 100 Ciss 10000 Coss Crss 1000 100 12.0 V DS= 60V V DS= 38V 10.0 V DS= 15V 8.0 6.0 4.0 2.0 0.0 1 10 100 0 50 100 150 200 V DS, Drain-to-Source Voltage (V) QG, Total Gate Charge (nC) Fig 7. Typical Capacitance vs. Drain-to-Source Voltage Fig 8. Typical Gate Charge vs. Gate-to-Source Voltage 4 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback 250 November 5, 2014 IRFB/S/SL7734PbF 1000 100µsec ID, Drain-to-Source Current (A) ISD, Reverse Drain Current (A) 1msec TJ = 175°C 100 TJ = 25°C 10 100 OPERATION IN THIS AREA LIMITED BY RDS(on) 10 1 0.1 0.0 0.4 0.8 1.2 1.6 2.0 0.1 V SD, Source-to-Drain Voltage (V) 1 10 VDS, Drain-to-Source Voltage (V) Fig 10. Maximum Safe Operating Area Fig 9. Typical Source-Drain Diode Forward Voltage 2.0 95 Id = 1.0mA 1.5 90 Energy (µJ) V(BR)DSS , Drain-to-Source Breakdown Voltage (V) DC Tc = 25°C Tj = 175°C Single Pulse V GS = 0V 1.0 10msec 85 1.0 0.5 80 0.0 75 -10 -60 -40 -20 0 20 40 60 80 100120140160180 T J , Temperature ( °C ) 0 10 20 30 40 50 60 70 80 VDS, Drain-to-Source Voltage (V) RDS(on), Drain-to -Source On Resistance ( m) Fig 11. Drain-to-Source Breakdown Voltage Fig 12. Typical Coss Stored Energy 3.6 Vgs = 5.5V Vgs = 6.0V Vgs = 7.0V Vgs = 8.0V Vgs = 10V 3.4 3.2 3.0 2.8 0 20 40 60 80 100 120 140 160 180 200 ID, Drain Current (A) Fig 13. Typical On-Resistance vs. Drain Current 5 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF Thermal Response ( Z thJC ) °C/W 1 D = 0.50 0.20 0.10 0.1 0.05 0.02 0.01 0.01 0.001 SINGLE PULSE ( THERMAL RESPONSE ) 0.0001 1E-006 1E-005 0.0001 Notes: 1. Duty Factor D = t1/t2 2. Peak Tj = P dm x Zthjc + Tc 0.001 0.01 0.1 1 t1 , Rectangular Pulse Duration (sec) Fig 14. Maximum Effective Transient Thermal Impedance, Junction-to-Case 1000 Avalanche Current (A) Allowed avalanche Current vs avalanche pulsewidth, tav, assuming Tj = 150°C and Tstart = 25°C (Single Pulse) 100 10 Allowed avalanche Current vs avalanche pulsewidth, tav, assuming j = 25°C and Tstart = 150°C. 1 1.0E-06 1.0E-05 1.0E-04 1.0E-03 1.0E-02 tav (sec) Fig 15. Avalanche Current vs. Pulse Width EAR , Avalanche Energy (mJ) 400 TOP Single Pulse BOTTOM 1.0% Duty Cycle ID = 100A 300 200 100 0 25 50 75 100 125 150 175 Starting T J , Junction Temperature (°C) Fig 16. Maximum Avalanche Energy vs. Temperature 6 www.irf.com © 2014 International Rectifier Notes on Repetitive Avalanche Curves , Figures 15, 16: (For further info, see AN-1005 at www.irf.com) 1.Avalanche failures assumption: Purely a thermal phenomenon and failure occurs at a temperature far in excess of Tjmax. This is validated for every part type. 2. Safe operation in Avalanche is allowed as long asTjmax is not exceeded. 3. Equation below based on circuit and waveforms shown in Figures 23a, 23b. 4. PD (ave) = Average power dissipation per single avalanche pulse. 5. BV = Rated breakdown voltage (1.3 factor accounts for voltage increase during avalanche). 6. Iav = Allowable avalanche current. 7. T = Allowable rise in junction temperature, not to exceed Tjmax (assumed as 25°C in Figure 15, 16). tav = Average time in avalanche. D = Duty cycle in avalanche = tav ·f ZthJC(D, tav) = Transient thermal resistance, see Figures 13) PD (ave) = 1/2 ( 1.3·BV·Iav) = T/ ZthJC Iav = 2T/ [1.3·BV·Zth] EAS (AR) = PD (ave)·tav Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF 20 IF = 60A V R = 64V TJ = 25°C 3.5 15 3.0 TJ = 125°C 2.5 2.0 ID = 150µA ID = 250µA 1.5 ID = 1.0mA ID = 1.0A IRRM (A) V GS(th) , Gate threshold Voltage (V) 4.0 10 5 1.0 0.5 0 -75 -50 -25 0 25 50 75 100 125 150 175 0 400 600 800 1000 diF /dt (A/µs) Fig 17. Threshold Voltage vs. Temperature Fig 18. Typical Recovery Current vs. dif/dt 400 20 IF = 60A V R = 64V TJ = 25°C IF = 100A V R = 64V TJ = 25°C TJ = 125°C 300 TJ = 125°C QRR (nC) 15 IRRM (A) 200 TJ , Temperature ( °C ) 10 200 100 5 0 0 0 200 400 600 800 0 1000 200 400 600 800 1000 diF /dt (A/µs) diF /dt (A/µs) Fig 19. Typical Recovery Current vs. dif/dt Fig 20. Typical Stored Charge vs. dif/dt 400 IF = 100A V R = 64V TJ = 25°C 300 QRR (nC) TJ = 125°C 200 100 0 0 200 400 600 800 1000 diF /dt (A/µs) Fig 21. Typical Stored Charge vs. dif/dt 7 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF Fig 22. Peak Diode Recovery dv/dt Test Circuit for N-Channel HEXFET® Power MOSFETs V(BR)DSS tp 15V DRIVER L VDS D.U.T RG IAS 20V tp + V - DD A I AS 0.01 Fig 23a. Unclamped Inductive Test Circuit Fig 23b. Unclamped Inductive Waveforms Fig 24a. Switching Time Test Circuit Fig 24b. Switching Time Waveforms Id Vds Vgs VDD Vgs(th) Qgs1 Qgs2 Fig 25a. Gate Charge Test Circuit 8 www.irf.com © 2014 International Rectifier Qgd Qgodr Fig 25b. Gate Charge Waveform Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF TO-220AB Package Outline (Dimensions are shown in millimeters (inches)) TO-220AB Part Marking Information EXAM PLE: T H IS IS A N IR F 1 0 1 0 LO T C O D E 1789 ASSEM BLED O N W W 19, 2000 IN T H E A S S E M B L Y L IN E "C " N o t e : "P " in a s s e m b ly lin e p o s it io n in d ic a t e s "L e a d - F r e e " IN T E R N A T IO N A L R E C T IF IE R LO G O ASSEM BLY LO T C O D E PART NUM BER D ATE C O D E YEA R 0 = 2000 W EEK 19 L IN E C TO-220AB packages are not recommended for Surface Mount Application. Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 9 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF TO-262 Package Outline (Dimensions are shown in millimeters (inches) TO-262 Part Marking Information EXAMPLE: THIS IS AN IRL3103L LOT CODE 1789 ASSEMBLED ON WW19, 1997 IN THE ASSEMBLYLINE "C" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE YEAR 7 = 1997 WEEK 19 LINE C OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER DATE CODE P = DESIGNATES LEAD-FREE PRODUCT (OPTIONAL) YEAR 7 = 1997 WEEK 19 A = ASSEMBLYSITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 10 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF D2Pak (TO-263AB) Package Outline (Dimensions are shown in millimeters (inches)) D2Pak (TO-263AB) Part Marking Information THIS IS AN IRF530S WITH LOT CODE 8024 ASSEMBLED ON WW 02, 2000 IN THE ASSEMBLY LINE "L" INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE YEAR 0 = 2000 WEEK 02 LINE L OR INTERNATIONAL RECTIFIER LOGO ASSEMBLY LOT CODE PART NUMBER F530S DATE CODE P = DESIGNATES LEAD - FREE PRODUCT (OPTIONAL) YEAR 0 = 2000 WEEK 02 A = ASSEMBLY SITE CODE Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ 11 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 IRFB/S/SL7734PbF D2Pak (TO-263AB) Tape & Reel Information (Dimensions are shown in millimeters (inches)) TRR 1.60 (.063) 1.50 (.059) 1.60 (.063) 1.50 (.059) 4.10 (.161) 3.90 (.153) FEED DIRECTION 1.85 (.073) 11.60 (.457) 11.40 (.449) 1.65 (.065) 0.368 (.0145) 0.342 (.0135) 15.42 (.609) 15.22 (.601) 24.30 (.957) 23.90 (.941) TRL 1.75 (.069) 1.25 (.049) 10.90 (.429) 10.70 (.421) 4.72 (.136) 4.52 (.178) 16.10 (.634) 15.90 (.626) FEED DIRECTION 13.50 (.532) 12.80 (.504) 27.40 (1.079) 23.90 (.941) 4 330.00 (14.173) MAX. 60.00 (2.362) MIN. NOTES : 1. COMFORMS TO EIA-418. 2. CONTROLLING DIMENSION: MILLIMETER. 3. DIMENSION MEASURED @ HUB. 4. INCLUDES FLANGE DISTORTION @ OUTER EDGE. 26.40 (1.039) 24.40 (.961) 3 30.40 (1.197) MAX. 4 Note: For the most current drawing please refer to IR website at http://www.irf.com/package/ Qualification Information† Industrial (per JEDEC JESD47F) †† Qualification Level Moisture Sensitivity Level TO-220 N/A D2Pak MSL1 TO-262 N/A Yes RoHS Compliant † Qualification standards can be found at International Rectifier’s web site: http://www.irf.com/product-info/reliability/ †† Applicable version of JEDEC standard at the time of product release. Revision History Date 11/5/2014 Comments Updated EAS (L =1mH) = 670mJ on page 2 Updated note 8 “Limited by TJmax, starting TJ = 25°C, L = 1mH, RG = 50, IAS = 37A, VGS =10V”. on page 2 Updated package outline on page 9,10,11. IR WORLD HEADQUARTERS: 101 N. Sepulveda Blvd., El Segundo, California 90245, USA To contact International Rectifier, please visit http://www.irf.com/whoto-call/ 12 www.irf.com © 2014 International Rectifier Submit Datasheet Feedback November 5, 2014 Mouser Electronics Authorized Distributor Click to View Pricing, Inventory, Delivery & Lifecycle Information: International Rectifier: IRFS7734TRLPBF IRFB7734PBF IRFSL7734PBF IRFS7734PBF