DATA SHEET GMZJ2.0~GMZJ56 SURFACE MOUNT ZENER DIODES VOLTAGE 2.0 to 56 Volts 500 mWatts POWER MICRO-MELF Unit : inch (mm) FEATURES • Planar Die construction • 500mW Power Dissipation .049(1.25) .047(1.2)DIA. • Ideally Suited for Automated Assembly Processes • Both normal and Pb free product are available : Normal : 80~95% Sn, 5~20% Pb Pb free: 98.5% Sn above .043(1.1) .008(0.2) MECHANICAL DATA .008(0.2) .079(2.0) .071(1.8) • Case: Molded Glass MICRO-MELF • Terminals: Solderable per MIL-STD-202E, Method 208 • Polarity: See Diagram Below • Approx. Weight: 0.01 grams • Mounting Position: Any • Packing information T/R - 2.5K per 7" plastic Reel MAXIMUM RATINGS AND ELECTRICAL CHARACTERISTICS Parameter Symbol Value Units PTOT 500 mW Junction Temperature TJ 175 O C Storage Temperature Range TS -65 to +175 O C Power Dissipation at Tamb = 25 O C Valid provided that leads at a distance of 10mm from case are kept at ambient temperature. Parameter Thermal Resi stance Juncti on to Ambi ent Ai r Forward Voltage at IF = 100mA Symbol Mi n. Typ. Max. Uni ts RthA -- -- 0.3 K/mW VF -- -- 1 V Vali d provi ded that leads at a di stance of 10mm from case are kept at ambi ent temperature. STAD-SEP.14.2004 PAGE . 1 Part Number GMZJ 2.0 GMZJ 2.2 GMZJ 2.4 GMZJ 2.7 GMZJ 3.0 GMZJ 3.3 GMZJ 3.6 GMZJ 3.9 GMZJ 4.3 GMZJ 4.7 GMZJ 5.1 GMZJ 5.6 GMZJ 6.2 GMZJ 6.8 GMZJ 7.5 GMZJ 8.2 GMZJ 9.1 GMZJ 10 GMZJ 11 STAD-SEP.14.2004 C LA S S V Z @ IZT M i n. V M a x. V A 1.88 2.10 B 2.02 2.20 A 2.12 2.30 B 2.22 2.41 A 2.33 2.52 B 2.43 2.63 A 2.54 2.75 B 2.69 2.91 A 2.85 3.07 B 3.01 3.22 A 3.16 3.38 B 3.32 3.53 A 3.455 3.695 B 3.60 3.845 A 3.74 4.01 B 3.89 4.16 A 4.04 4.29 B 4.17 4.43 C 4.30 4.57 A 4.44 4.68 B 4.55 4.80 C 4.68 4.93 A 4.81 5.07 B 4.94 5.20 C 5.09 5.37 A 5.28 5.55 B 5.45 5.73 C 5.61 5.91 A 5.78 6.09 B 5.96 6.27 C 6.12 6.44 A 6.29 6.63 B 6.49 6.83 C 6.66 7.01 A 6.85 7.22 B 7.07 7.45 C 7.29 7.67 A 7.53 7.92 B 7.78 8.19 C 8.03 8.45 A 8.29 8.73 B 8.57 9.01 C 8.83 9.30 A 9.12 9.59 B 9.41 9.90 C 9.70 10.20 D 9.94 10.44 A 10.18 10.71 B 10.50 11.05 C 10.82 11.38 IZ (m A ) VR (V ) IR ( u A ) MA X Iz t (mA ) Z ZT (Ω ) MA X IZK (m A) Z ZK (Ω ) MA X 5 0.5 120 5 100 0.5 1000 5 0.7 100 5 100 0.5 1000 5 1.0 120 5 100 0.5 1000 5 1.0 100 5 110 0.5 1000 5 1.0 50 5 120 0.5 1000 5 1.0 20 5 120 0.5 1000 5 1.0 10 5 100 1 1000 5 1.0 5 5 100 1 1000 5 1.0 5 5 100 1 1000 5 1.0 5 5 90 1 900 5 1.5 5 5 80 1 800 5 2.5 5 5 60 1 500 5 3.0 5 5 60 1 300 5 3.5 2 5 20 0.5 150 5 4.0 0.5 5 20 0.5 120 5 5.0 0.5 5 20 0.5 120 5 6.0 0.5 5 25 0.5 120 5 7.0 0.2 5 30 0.5 120 5 8.0 0.2 5 30 0.5 120 PAGE . 2 Part Number GMZJ 12 GMZJ 13 GMZJ 15 GMZJ 16 GMZJ 18 GMZJ 20 GMZJ 22 GMZJ 24 GMZJ 27 GMZJ 30 GMZJ 33 GMZJ 36 GMZJ 39 C LA S S V Z @ IZT M i n. V M a x. V A 11.13 11.71 B 11.44 12.03 C 11.74 12.35 A 12.11 12.75 B 12.55 13.21 C 12.99 13.66 A 13.44 14.13 B 13.89 14.62 C 14.35 15.09 A 14.80 15.57 B 15.25 16.04 C 15.69 16.51 A 16.22 17.06 B 16.82 17.70 C 17.42 18.33 A 18.02 18.96 B 18.63 19.59 C 19.23 20.22 D 19.72 20.72 A 20.15 21.20 B 20.64 21.71 C 21.08 22.17 D 21.52 22.63 A 22.05 23.18 B 22.61 23.77 C 23.12 24.31 D 23.63 24.85 A 24.26 25.52 B 24.97 26.26 C 25.63 26.95 D 26.29 27.64 A 26.99 28.39 B 27.70 29.13 C 28.36 29.82 D 29.02 30.51 A 29.68 31.22 B 30.32 31.88 C 30.90 32.50 D 31.49 33.11 A 32.14 33.79 B 32.79 34.49 C 33.40 35.13 D 34.01 35.77 A 34.68 36.47 B 35.36 37.19 C 36.00 37.85 D IZ (m A ) VR (V ) IR ( u A ) MA X Iz t (mA ) Z ZT (Ω ) MA X IZK (m A) Z ZK (Ω) MA X 5 9.0 0.2 5 30 0.5 110 5 10 0.2 5 35 0.5 110 5 11 0.2 5 40 0.5 110 5 12 0.2 5 40 0.5 150 5 13 0.2 5 45 0.5 150 5 15 0.2 5 55 0.5 200 5 17 0.2 5 30 0.5 200 5 19 0.2 5 35 0.5 200 5 21 0.2 5 45 0.5 250 5 23 0.2 5 55 0.5 250 5 25 0.2 5 65 0.5 250 5 27 0.2 5 75 0.5 250 5 30 0.2 5 85 0.5 250 36.63 38.52 GMZJ 43 40.00 45.00 5 33 0.2 5 90 -- -- GMZJ 47 44.00 49.00 5 36 0.2 5 90 -- -- GMZJ 51 48.00 54.00 5 39 0.2 5 110 -- -- GMZJ 56 53.00 60.00 5 43 0.2 5 110 -- -- STAD-SEP.14.2004 PAGE . 3 1.3 VZtn – RelativeVoltageChange 500 400 300 l l 200 100 0 5 10 TK VZ =10 x 10–4/K 8 x 10–4/K 6 x 10–4/K 1.1 4 x 10–4/K 2 x 10–4/K 0 1.0 –2 x 10–4/K –4 x 10–4/K 0.9 0.8 –60 20 15 l – Lead Length ( mm ) 500 400 300 200 100 0 40 80 120 160 200 Tamb – Ambient Temperature(°C ) 95 9602 60 120 180 240 Fig. 4 Typical Change of Working Voltage vs. Junction Temperature 600 0 0 Tj – Junction Temperature (°C ) 95 9599 Fig. 1 Thermal Resistance vs. Lead Length Ptot –Total Power Dissipation ( mW) 1.2 TL=constant 0 95 9611 15 10 5 I Z=5mA 0 –5 0 10 20 30 40 50 V Z – Z-Voltage ( V ) 95 9600 Fig. 2 Total Power Dissipation vs. Ambient Temperature Fig. 5 Temperature Coefficient of Vz vs. Z-Voltage 1000 200 CD – Diode Capacitance ( pF ) VZ –VoltageChange( mV ) V Ztn=V Zt/V Z(25°C) TK VZ –Temperature Coefficient of VZ ( 10–4 /K) RthJA –Therm.Resist.Junction/ Ambient ( K/W) Typical Characteristics (Tamb = 25 °C unless otherwise specified) Tj =25°C 100 I Z=5mA 10 150 V R=2V Tj =25°C 100 1 50 0 0 95 9598 5 10 15 20 25 V Z – Z-Voltage ( V ) Fig. 3 Typical Change of Working Voltage under Operating Conditions at Tamb=25°C STAD-SEP.14.2004 0 95 9601 5 10 15 20 25 V Z – Z-Voltage ( V ) Fig. 6 Diode Capacitance vs. Z-Voltage PAGE . 4 50 10 40 IZ – Z-Current ( mA) I F – Forward Current ( mA) 100 Tj =25°C 1 0.1 30 20 10 0.01 0 0.001 0 0.2 0.4 0.6 0.8 15 1.0 V F – Forward Voltage ( V ) 95 9605 r Z – Differential Z-Resistance ( Ω ) IZ – Z-Current ( mA) 25 Ptot=500mW Tamb=25°C 60 40 20 1000 I Z=1mA 100 0 5mA 10 10mA Tj =25°C 1 0 4 8 12 16 20 0 V Z – Z-Voltage ( V ) 95 9604 35 30 V Z – Z-Voltage ( V ) Fig. 9 Z-Current vs. Z-Voltage 100 80 20 95 9607 Fig. 7 Forward Current vs. Forward Voltage 5 10 15 20 25 V Z – Z-Voltage ( V ) 95 9606 Fig. 8 Z-Current vs. Z-Voltage Zthp –ThermalResistancefor PulseCond.(K/W) Ptot=500mW Tamb=25°C Fig. 10 Differential Z-Resistance vs. Z-Voltage 1000 tp/T=0.5 100 tp/T=0.2 Single Pulse 10 RthJA=300K/W T=Tjmax–Tamb tp/T=0.01 tp/T=0.1 tp/T=0.02 tp/T=0.05 1 10–1 95 9603 i ZM =(–VZ+(V Z2+4rzj x T/Zthp)1/2)/(2rzj) 100 101 102 tp – Pulse Length ( ms ) Fig. 11 Thermal Response STAD-SEP.14.2004 PAGE . 5