ON MJD112G Complementary darlington power transistor Datasheet

MJD112 (NPN)
MJD117 (PNP)
Complementary Darlington
Power Transistors
DPAK For Surface Mount Applications
http://onsemi.com
Designed for general purpose power and switching such as output or
driver stages in applications such as switching regulators, converters,
and power amplifiers.
SILICON
POWER TRANSISTORS
2 AMPERES
100 VOLTS, 20 WATTS
Features
• Lead Formed for Surface Mount Applications in Plastic Sleeves
•
•
•
(No Suffix)
Straight Lead Version in Plastic Sleeves (“−1” Suffix)
Electrically Similar to Popular TIP31 and TIP32 Series
Pb−Free Packages are Available
MARKING
DIAGRAMS
4
MAXIMUM RATINGS
Rating
1 2
Symbol
Max
Unit
VCEO
100
Vdc
Collector−Base Voltage
VCB
100
Vdc
Emitter−Base Voltage
VEB
5
Vdc
IC
2
4
Adc
Collector−Emitter Voltage
Collector Current
− Continuous
− Peak
Base Current
IB
50
mAdc
Total Power Dissipation @ TC = 25°C
Derate above 25°C
PD
20
0.16
W
W/°C
Total Power Dissipation (Note1)
@ TA = 25°C
Derate above 25°C
PD
Operating and Storage Junction
Temperature Range
TJ, Tstg
−65 to +150
W
W/°C
1.75
0.014
°C
DPAK
CASE 369C
AYWW
J11xG
3
4
DPAK−3
CASE 369D
1
2
3
A
Y
WW
x
G
YWW
J11xG
= Assembly Location
= Year
= Work Week
= 2 or 7
= Pb−Free Package
ORDERING INFORMATION
See detailed ordering and shipping information in the package
dimensions section on page 6 of this data sheet.
THERMAL CHARACTERISTICS
Symbol
Max
Unit
Thermal Resistance, Junction−to−Case
Characteristic
RqJC
6.25
°C/W
Thermal Resistance, Junction−to−Ambient
(Note 1)
RqJA
71.4
°C/W
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. These ratings are applicable when surface mounted on the minimum pad
sizes recommended.
© Semiconductor Components Industries, LLC, 2011
March, 2011 − Rev. 9
1
Publication Order Number:
MJD112/D
MJD112 (NPN) MJD117 (PNP)
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ELECTRICAL CHARACTERISTICS (TC = 25_C unless otherwise noted)
Characteristic
Symbol
Min
Max
Unit
100
−
−
20
−
20
−
2
−
10
−
2
500
1000
200
−
12,000
−
−
−
2
3
−
4
−
2.8
25
−
−
−
200
100
OFF CHARACTERISTICS
Collector−Emitter Sustaining Voltage (Note 2)
(IC = 30 mAdc, IB = 0)
VCEO(sus)
Collector Cutoff Current
(VCE = 50 Vdc, IB = 0)
ICEO
Collector Cutoff Current
(VCB = 100 Vdc, IE = 0)
ICBO
Emitter Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Collector−Cutoff Current
(VCB = 80 Vdc, IE = 0)
ICBO
Emitter−Cutoff Current
(VBE = 5 Vdc, IC = 0)
IEBO
Vdc
mAdc
mAdc
mAdc
mAdc
mAdc
ON CHARACTERISTICS
DC Current Gain
(IC = 0.5 Adc, VCE = 3 Vdc)
(IC = 2 Adc, VCE = 3 Vdc)
(IC = 4 Adc, VCE = 3 Vdc)
hFE
−
Collector−Emitter Saturation Voltage
(IC = 2 Adc, IB = 8 mAdc)
(IC = 4 Adc, IB = 40 mAdc)
VCE(sat)
Base−Emitter Saturation Voltage
(IC = 4 Adc, IB = 40 mAdc)
VBE(sat)
Base−Emitter On Voltage
(IC = 2 Adc, VCE = 3 Vdc)
VBE(on)
Vdc
Vdc
Vdc
DYNAMIC CHARACTERISTICS
Current−Gain − Bandwidth Product
(IC = 0.75 Adc, VCE = 10 Vdc, f = 1 MHz)
fT
Output Capacitance
(VCB = 10 Vdc, IE = 0, f = 0.1 MHz)
MJD117
MJD112
Cob
MHz
pF
2. Pulse Test: Pulse Width v 300 ms, Duty Cycle v 2%.
*These ratings are applicable when surface mounted on the minimum pad sizes recommended.
RB & RC VARIED TO OBTAIN DESIRED CURRENT LEVELS
D1, MUST BE FAST RECOVERY TYPE, e.g.:
1N5825 USED ABOVE IB ≈ 100 mA
MSD6100 USED BELOW IB ≈ 100 mA
ts
RC SCOPE
TUT
V2
APPROX
+8 V
0
V1
APPROX
-12 V
4
VCC
-30 V
51
25 ms
tr, tf ≤ 10 ns
DUTY CYCLE = 1%
D1
≈8k
t, TIME (s)
μ
RB
≈ 60
+4V
VCC = 30 V
IC/IB = 250
IB1 = IB2
TJ = 25°C
2
tf
1
0.8
tr
0.6
0.4
FOR td AND tr, D1 IS DISCONNECTED
AND V2 = 0
0.2
0.04 0.06
FOR NPN TEST CIRCUIT REVERSE ALL POLARITIES.
Figure 1. Switching Times Test Circuit
PNP
NPN
0.1
td @ VBE(off) = 0 V
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 2. Switching Times
http://onsemi.com
2
2
4
r(t), EFFECTIVE TRANSIENT
THERMAL RESISTANCE (NORMALIZED)
MJD112 (NPN) MJD117 (PNP)
1
0.7
0.5
D = 0.5
0.3
0.2
0.2
0.1
0.05
0.1
0.07
0.05
0.01
0.03
SINGLE PULSE
P(pk)
RqJC(t) = r(t) RqJC
RqJC = 6.25°C/W
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t1
TJ(pk) - TC = P(pk) qJC(t)
t1
t2
DUTY CYCLE, D = t1/t2
0.02
0.01
0.01
0.02 0.03
0.05
0.1
0.2 0.3
0.5
1
2 3
5
10
t, TIME OR PULSE WIDTH (ms)
20
30
50
100
200 300
500
1000
Figure 3. Thermal Response
TA TC
2.5 25
10
7
5
3
2
100ms
PD, POWER DISSIPATION (WATTS)
IC, COLLECTOR CURRENT (AMP)
ACTIVE−REGION SAFE−OPERATING AREA
500ms
1
0.7
0.5
0.3
0.2
5ms
1ms
dc
BONDING WIRE LIMITED
THERMAL LIMIT
SECOND BREAKDOWN LIMIT
0.1
TJ = 150°C
CURVES APPLY BELOW RATED VCEO
2
3
5
7
10
20
30
50
70 100
200
2 20
1.5 15
TA
SURFACE
MOUNT
1 10
0.5
5
0
0
25
50
75
100
T, TEMPERATURE (°C)
VCE, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 4. Maximum Rated Forward Biased
Safe Operating Area
TC
125
15
Figure 5. Power Derating
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate IC − VCE
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figures 5 and 6 is based on TJ(pk) = 150_C; TC
is variable depending on conditions. Second breakdown
pulse limits are valid for duty cycles to 10% provided
TJ(pk) < 150_C. TJ(pk) may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
200
C, CAPACITANCE (pF)
TC = 25°C
100
70
50
Cob
30
Cib
20
PNP
NPN
10
0.04 0.06 0.1
0.2
0.4 0.6
1
2
4
6
VR, REVERSE VOLTAGE (VOLTS)
Figure 6. Capacitance
http://onsemi.com
3
10
20
40
MJD112 (NPN) MJD117 (PNP)
TYPICAL ELECTRICAL CHARACTERISTICS
NPN MJD112
PNP MJD117
6k
6k
VCE = 3 V
4k
4k
3k
3k
2k
hFE, DC CURRENT GAIN
hFE, DC CURRENT GAIN
TJ = 125°C
25°C
1k
800
-55°C
600
400
300
0.04 0.06
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
25°C
2k
1k
800
-55°C
600
400
300
0.04 0.06
4
VCE = 3 V
TC = 125°C
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
3.4
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
VCE , COLLECTOR-EMITTER VOLTAGE (VOLTS)
Figure 7. DC Current Gain
TJ = 125°C
3 IC =
0.5 A
2.6
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
1
2
5
10
20
50
100
3.4
TJ = 125°C
3
2.6
IC =
0.5 A
1A
2A
4A
2.2
1.8
1.4
1
0.6
0.1
0.2
0.5
IB, BASE CURRENT (mA)
1
2
5
10
20
50
100
IB, BASE CURRENT (mA)
Figure 8. Collector Saturation Region
2.2
2.2
TJ = 25°C
TJ = 25°C
1.4
1.8
VBE(sat) @ IC/IB = 250
V, VOLTAGE (VOLTS)
V, VOLTAGE (VOLTS)
1.8
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.2
0.04 0.06
1.4
VBE(sat) @ IC/IB = 250
VBE @ VCE = 3 V
1
VCE(sat) @ IC/IB = 250
0.6
0.1
0.2
0.4
0.6
1
2
0.2
0.04 0.06
4
IC, COLLECTOR CURRENT (AMP)
0.1
0.2
0.4
0.6
1
IC, COLLECTOR CURRENT (AMP)
Figure 9. “On Voltages
http://onsemi.com
4
2
4
MJD112 (NPN) MJD117 (PNP)
PNP MJD117
+0.8
0
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
θV, TEMPERATURE COEFFICIENTS (mV/ °C)
NPN MJD112
*APPLIED FOR IC/IB < hFE/3
-0.8
25°C TO 150°C
-1.6
-2.4
*qVC FOR VCE(sat)
-55°C TO 25°C
-3.2
-4
25°C TO 150°C
qVC FOR VBE
-4.8
0.04 0.06
0.1
-55°C TO 25°C
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
+0.8
0
*APPLIES FOR IC/IB < hFE/3
25°C TO 150°C
-0.8
-1.6
*qVC FOR VCE(sat)
-55°C TO 25°C
-2.4
25°C TO 150°C
-3.2
-4
-4.8
0.04 0.06
4
-55°C TO 25°C
qVB FOR VBE
0.1
0.2
0.4 0.6
1
IC, COLLECTOR CURRENT (AMP)
2
4
Figure 10. Temperature Coefficients
105
104
103
REVERSE
FORWARD
IC, COLLECTOR CURRENT (A)
μ
IC, COLLECTOR CURRENT (A)
μ
105
VCE = 30 V
102
TJ = 150°C
101
100
100°C
25°C
10-1
-0.6 -0.4 -0.2
0 +0.2 +0.4 +0.6 +0.8 +1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
104
103
REVERSE
FORWARD
VCE = 30 V
102
101
TJ = 150°C
100°C
100
25°C
10-1
+0.6 +0.4 +0.2
0 -0.2 -0.4 -0.6 -0.8 -1
VBE, BASE-EMITTER VOLTAGE (VOLTS)
+1.2 +1.4
Figure 11. Collector Cut−Off Region
COLLECTOR
PNP
COLLECTOR
NPN
BASE
BASE
≈8k
≈ 120
≈8k
EMITTER
≈ 120
EMITTER
Figure 12. Darlington Schematic
http://onsemi.com
5
-1.2 -1.4
MJD112 (NPN) MJD117 (PNP)
ORDERING INFORMATION
Device
MJD112
MJD112G
Package Type
MJD112−1G
DPAK−3
(Pb−Free)
MJD112T4
MJD112T4G
MJD117
MJD117G
369D
1800 Tape & Reel
DPAK
(Pb−Free)
DPAK
369C
DPAK
(Pb−Free)
2500 Tape & Reel
DPAK
DPAK
(Pb−Free)
DPAK−3
MJD117−1G
DPAK−3
(Pb−Free)
MJD117T4G
75 Units / Rail
DPAK
MJD117−001
MJD117T4
369C
DPAK
(Pb−Free)
DPAK−3
MJD112RLG
Shipping†
DPAK
MJD112−001
MJD112RL
Package
75 Units / Rail
369D
DPAK
369C
DPAK
(Pb−Free)
2500 Tape & Reel
†For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
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6
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK
CASE 369C−01
ISSUE D
A
E
b3
c2
B
Z
D
1
L4
A
4
L3
b2
e
2
NOTES:
1. DIMENSIONING AND TOLERANCING PER ASME
Y14.5M, 1994.
2. CONTROLLING DIMENSION: INCHES.
3. THERMAL PAD CONTOUR OPTIONAL WITHIN DIMENSIONS b3, L3 and Z.
4. DIMENSIONS D AND E DO NOT INCLUDE MOLD
FLASH, PROTRUSIONS, OR BURRS. MOLD
FLASH, PROTRUSIONS, OR GATE BURRS SHALL
NOT EXCEED 0.006 INCHES PER SIDE.
5. DIMENSIONS D AND E ARE DETERMINED AT THE
OUTERMOST EXTREMES OF THE PLASTIC BODY.
6. DATUMS A AND B ARE DETERMINED AT DATUM
PLANE H.
C
H
DETAIL A
3
c
b
0.005 (0.13)
M
H
C
L2
GAUGE
PLANE
C
L
SEATING
PLANE
A1
L1
DETAIL A
ROTATED 905 CW
INCHES
MIN
MAX
0.086 0.094
0.000 0.005
0.025 0.035
0.030 0.045
0.180 0.215
0.018 0.024
0.018 0.024
0.235 0.245
0.250 0.265
0.090 BSC
0.370 0.410
0.055 0.070
0.108 REF
0.020 BSC
0.035 0.050
−−− 0.040
0.155
−−−
STYLE 1:
PIN 1. BASE
2. COLLECTOR
3. EMITTER
4. COLLECTOR
SOLDERING FOOTPRINT*
6.20
0.244
DIM
A
A1
b
b2
b3
c
c2
D
E
e
H
L
L1
L2
L3
L4
Z
3.0
0.118
2.58
0.101
5.80
0.228
1.6
0.063
6.172
0.243
SCALE 3:1
mm Ǔ
ǒinches
*For additional information on our Pb−Free strategy and soldering
details, please download the ON Semiconductor Soldering and
Mounting Techniques Reference Manual, SOLDERRM/D.
http://onsemi.com
7
MILLIMETERS
MIN
MAX
2.18
2.38
0.00
0.13
0.63
0.89
0.76
1.14
4.57
5.46
0.46
0.61
0.46
0.61
5.97
6.22
6.35
6.73
2.29 BSC
9.40 10.41
1.40
1.78
2.74 REF
0.51 BSC
0.89
1.27
−−−
1.01
3.93
−−−
MJD112 (NPN) MJD117 (PNP)
PACKAGE DIMENSIONS
DPAK−3
CASE 369D−01
ISSUE B
C
B
V
NOTES:
1. DIMENSIONING AND TOLERANCING PER
ANSI Y14.5M, 1982.
2. CONTROLLING DIMENSION: INCH.
E
R
4
Z
A
S
1
2
3
−T−
SEATING
PLANE
K
J
F
D
G
H
DIM
A
B
C
D
E
F
G
H
J
K
R
S
V
Z
INCHES
MIN
MAX
0.235 0.245
0.250 0.265
0.086 0.094
0.027 0.035
0.018 0.023
0.037 0.045
0.090 BSC
0.034 0.040
0.018 0.023
0.350 0.380
0.180 0.215
0.025 0.040
0.035 0.050
0.155
−−−
MILLIMETERS
MIN
MAX
5.97
6.35
6.35
6.73
2.19
2.38
0.69
0.88
0.46
0.58
0.94
1.14
2.29 BSC
0.87
1.01
0.46
0.58
8.89
9.65
4.45
5.45
0.63
1.01
0.89
1.27
3.93
−−−
3 PL
0.13 (0.005)
M
T
ON Semiconductor and
are registered trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice
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