HSMC H6968S Dual n-channel enhancement-mode mosfet (20v, 6.5a) (battery switch, esd protected) Datasheet

HI-SINCERITY
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 1/4
MICROELECTRONICS CORP.
H6968S / H6968CS
•
Dual N-Channel Enhancement-Mode MOSFET (20V, 6.5A)
(Battery Switch, ESD Protected)
8-Lead Plastic SO-8
Package Code: S
Features
• RDS(on)=32mΩ@VGS=2.5V, ID=5.5A
• RDS(on)=24mΩ@VGS=4.5V, ID=6.5A
• Advanced Trench Process Technology
• High Density Cell Design for Ultra Low On-Resistance
• Specially Designed for Li ion Battery Packs Use
• Designed for Battery Switch Appliactions
• ESD Protected
Absolute Maximum Ratings (T =25 C, unless otherwise noted)
o
A
Symbol
Parameter
Ratings
Units
VDS
Drain-Source Voltage
20
V
VGS
Gate-Source Voltage
±12
V
6.5
A
30
A
2
W
1.3
W
-55 to +150
°C
62.5
°C/W
ID
IDM
PD
Tj, Tstg
RθJA
Drain Current (Continuous)
Drain Current (Pulsed)
*1
Total Power Dissipation @TA=25oC
o
Total Power Dissipation @TA=75 C
Operating and Storage Temperature Range
Thermal Resistance Junction to Ambient (PCB mounted)*2
*1: Maximum DC current limited by the package
*2: 1-in2 2oz Cu PCB board
Pin Assignment & Internal Schematic Diagram
Part No.
Pin Assignment
Internal Schematic Diagram
D1
H6968S
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D2
D2
D1
D1
G1
D2
G2
Top View
H6968CS
S2
G2
S1
G1
1
2
3
4
8
7
6
5
D
D
D
D
S1
S2
D
D
G1
G2
Top View
S1
H6968S, H6968CS
S2
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 2/4
MICROELECTRONICS CORP.
Electrical Characteristics (TA=25°C, unless otherwise noted)
Symbol
Characteristic
Test Conditions
Min.
Typ.
Max.
Unit
VGS=0V, ID=250uA
20
-
-
V
VGS=2.5V, ID=5.5A
-
24
32
VGS=4.5V, ID=6.5A
-
20
24
0.6
-
1.6
V
• Static
BVDSS
Drain-Source Breakdown Voltage
RDS(on)
Drain-Source On-State Resistance
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250uA
IDSS
Zero Gate Voltage Drain Current
VDS=16V, VGS=0V
-
-
1
uA
IGSS
Gate-Body Leakage Current
VGS=±4.5V, VDS=0V
-
-
±200
nA
gFS
Forward Transconductance
VDS=10V, ID=6.5A
-
30
-
S
-
9
-
-
2.4
-
mΩ
• Dynamic
Qg
Total Gate Charge
Qgs
Gate-Source Charge
Qgd
Gate-Drain Charge
-
3.6
-
Ciss
Input Capacitance
-
476
-
Coss
Output Capacitance
-
65.1
-
Crss
Reverse Transfer Capacitance
-
49
-
td(on)
Turn-on Delay Time
-
50
-
tr
Turn-on Rise Time
VDD=10V, ID=1A, VGS=4.5V
-
100
-
td(off)
Turn-off Delay Time
RGEN=6Ω
-
500
-
-
200
-
-
-
1.7
A
-
0.61
1.2
V
tf
VDS=10V, ID=6A, VGS=4.5V
VDS=10V, VGS=0V, f=1MHz
nC
pF
ns
Turn-off Fall Time
• Drain-Source Diode Characteristics
IS
VSD
Maximum Diode Forward Current
Drain-Source Diode Forward Voltage
VGS=0V, IS=1.5A
Note: Pulse Test: Pulse Width ≤300us, Duty Cycle≤2%
Switching
Test Circuit
Switching
Waveforms
ton
VDD
td(on)
tr
toff
td(off)
tf
90%
90%
RD
VIN
D
VOUT
10%
Output, VOUT
10%
Inverted
VGEN
90%
RG
50%
G
50%
S
Input, VIN
H6968S, H6968CS
10%
Pulse Width
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 3/4
MICROELECTRONICS CORP.
SO-8 Dimension
A
DIM
A
B
C
D
E
F
G
H
I
J
K
L
M
N
O
H6968S Marking:
G
Pb Free Mark
Pb-Free: " . " (Note) H
Normal: None
8
7
B
6
C
Pin1 Index
2
3
I
5
Pin 1 Index
Date Code
H
4
H6968CS Marking:
E
Pb Free Mark
Pb-Free: " . " (Note) H
Normal: None
M
Pin 1 Index
Date Code
L
N
O
F
8-Lead SO-8 Plastic
Surface Mounted Package
HSMC Package Code: S
S
6 9 6 8 C
K
Part A
Part A
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6.D1 7 & 8.D2
J
D
S
6 9 6 8
Control Code
Pin Style: 1.S2 2.G2 3.S1 4.G1 5 & 6 & 7 & 8.D
Min.
4.85
3.85
5.80
1.22
0.37
3.74
1.45
4.80
0.05
0.30
0.19
0.37
0.23
0.08
0.00
Max.
5.10
3.95
6.20
1.32
0.47
3.88
1.65
5.10
0.20
0.70
0.25
0.52
0.28
0.13
0.15
*: Typical, Unit: mm
Note: Green label is used for pb-free packing
Material:
• Lead solder plating: Sn60/Pb40 (Normal),
Sn/3.0Ag/0.5Cu or Pure-Tin (Pb-free)
• Mold Compound: Epoxy resin family,
flammability solid burning class: UL94V-0
Important Notice:
• All rights are reserved. Reproduction in whole or in part is prohibited without the prior written approval of HSMC.
• HSMC reserves the right to make changes to its products without notice.
• HSMC semiconductor products are not warranted to be suitable for use in Life-Support Applications, or systems.
• HSMC assumes no liability for any consequence of customer product design, infringement of patents, or application assistance.
Head Office And Factory:
• Head Office (Hi-Sincerity Microelectronics Corp.): 10F.,No. 61, Sec. 2, Chung-Shan N. Rd. Taipei Taiwan R.O.C.
Tel: 886-2-25212056 Fax: 886-2-25632712, 25368454
• Factory 1: No. 38, Kuang Fu S. Rd., Fu-Kou Hsin-Chu Industrial Park Hsin-Chu Taiwan. R.O.C
Tel: 886-3-5983621~5 Fax: 886-3-5982931
H6968S, H6968CS
HSMC Product Specification
HI-SINCERITY
Spec. No. : MOS200510
Issued Date : 2005.10.01
Revised Date : 2005.10.06
Page No. : 4/4
MICROELECTRONICS CORP.
Soldering Methods for HSMC’s Products
1. Storage environment: Temperature=10oC~35oC Humidity=65%±15%
2. Reflow soldering of surface-mount devices
Figure 1: Temperature profile
tP
Critical Zone
TL to TP
TP
Ramp-up
TL
tL
Temperature
Tsmax
Tsmin
tS
Preheat
Ramp-down
25
t 25oC to Peak
Time
Profile Feature
Sn-Pb Eutectic Assembly
Pb-Free Assembly
<3oC/sec
<3oC/sec
- Temperature Min (Tsmin)
100oC
150oC
- Temperature Max (Tsmax)
150oC
200oC
60~120 sec
60~180 sec
<3oC/sec
<3oC/sec
183oC
217oC
Average ramp-up rate (TL to TP)
Preheat
- Time (min to max) (ts)
Tsmax to TL
- Ramp-up Rate
Time maintained above:
- Temperature (TL)
- Time (tL)
60~150 sec
Peak Temperature (TP)
Time within 5oC of actual Peak
Temperature (tP)
Ramp-down Rate
Time 25oC to Peak Temperature
o
o
60~150 sec
240 C +0/-5 C
260oC +0/-5oC
10~30 sec
20~40 sec
<6oC/sec
<6oC/sec
<6 minutes
<8 minutes
Peak temperature
Dipping time
245oC ±5oC
5sec ±1sec
3. Flow (wave) soldering (solder dipping)
Products
Pb devices.
Pb-Free devices.
H6968S, H6968CS
o
o
260 C +0/-5 C
5sec ±1sec
HSMC Product Specification
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