PolarHVTM HiPerFET Power MOSFET IXFN 64N50P VDSS ID25 RDS(on) trr N-Channel Enhancement Mode Avalanche Rated Fast Intrinsic Diode = 500 V = 64 A ≤ 85 mΩ Ω ≤ 250 ns Preliminary Data Sheet Symbol Test Conditions Maximum Ratings VDSS TJ = 25°C to 150°C 500 V VDGR TJ = 25°C to 150°C; RGS = 1 MΩ 500 V VGSS Continuous ±30 V VGSM Transient ±40 V ID25 TC = 25°C 64 A IDM TC = 25°C, pulse width limited by TJM 150 A IAR TC = 25°C 64 A EAR TC = 25°C 70 mJ EAS TC = 25°C 2.0 J dv/dt IS ≤ IDM, di/dt ≤ 100 A/µs, VDD ≤ VDSS, TJ ≤ 150°C, RG = 4 Ω 20 V/ns PD TC = 25°C 700 W -55 ... +150 150 -55 ... +150 °C °C °C TJ TJM Tstg Md Mounting torque VISOL 50/60 Hz t = 1 min IISOL ≤ 1 mA t=1s Mounting torque Terminal connection torque (M4) SOT-227B Md Weight 1.13/10 Nm/lb.in. 2500 V~ 3000 V~ 1.5/13 Nm/lb.in. 1.5/13 Nm/lb.in. 30 g miniBLOC, SOT-227 B (IXFN) E153432 S G S D G = Gate S = Source Either Source terminal S can be used as the Source terminal or the Kelvin Source (gate return) terminal. Features z International standard packages Fast recovery diode z Unclamped Inductive Switching (UIS) rated z Low package inductance - easy to drive and to protect Advantages z z Symbol Test Conditions (TJ = 25°C, unless otherwise specified) VDSS VGS = 0 V, ID = 250 µA VGS(th) VDS = VGS, ID = 8 mA IGSS VGS = ±30 VDC, VDS = 0 IDSS VDS = VDSS VGS = 0 V RDS(on) Characteristic Values Min. Typ. Max. 500 2.5 TJ = 125°C VGS = 10 V, ID = 0.5 ID25 Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % © 2005 IXYS All rights reserved D = Drain z z Easy to mount Space savings High power density V 5.0 V ±100 nA 25 250 µA µA 85 mΩ DS99349(02/05) IXFN64N50P Symbol Test Conditions Characteristic Values (TJ = 25°C, unless otherwise specified) Min. Typ. Max. gfs VDS = 20 V; ID = 0.5 ID25, pulse test 40 60 S 7000 pF 800 pF Crss 100 pF td(on) 30 ns Ciss Coss VGS = 0 V, VDS = 25 V, f = 1 MHz tr VGS = 10 V, VDS = 0.5 ID25 25 ns td(off) RG = 2 Ω (External) 85 ns 22 ns 200 nC tf Qg(on) Qgs VGS = 10 V, VDS = 0.5 VDSS, ID = 0.5 ID25 Qgd 45 nC 120 nC RthJC RthCK SOT-227B Outline 0.18 K/W SOT-227B 0.05 Source-Drain Diode K/W Characteristic Values (TJ = 25°C, unless otherwise specified) min. typ. max. Symbol Test Conditions IS VGS = 0 V ISM Repetitive VSD IF = IS, VGS = 0 V, Pulse test, t ≤ 300 µs, duty cycle d ≤ 2 % t rr IF = 25A, -di/dt = 100 A/µs QRM VR = 100V 64 A 150 A 1.5 V 250 ns 0.6 µC IXYS reserves the right to change limits, test conditions, and dimensions. IXYS MOSFETs and IGBTs are covered by one or moreof the following U.S. patents: 4,835,592 4,850,072 4,881,106 4,931,844 5,017,508 5,034,796 5,049,961 5,063,307 5,187,117 5,237,481 5,381,025 5,486,715 6,162,665 6,259,123 B1 6,306,728 B1 6,404,065 B1 6,534,343 6,583,505 6,683,344 6,710,405B2 6,710,463 6,727,585 6,759,692