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ON Semiconductor and the ON Semiconductor logo are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent-Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. FDMC2D8N025S N-Channel PowerTrench® SyncFETTM 25 V, 124 A, 1.9 mΩ Features General Description The FDMC2D8N025S has been designed to minimize losses in power conversion application. Advancements in both silicon and package technologies have been combined to offer the lowest rDS(on) while maintaining excellent switching performance. This device has the added benefit of an efficient monolithic schottky body diode. Max rDS(on) = 1.9 mΩ at VGS = 10 V, ID = 28 A Max rDS(on) = 2.4 mΩ at VGS = 4.5 V, ID = 25 A High Performance Technology for Extremely Low rDS(on) SyncFETTM Schottky Body Diode 100% UIL Tested Applications RoHS Compliant Synchronous Rectifier for DC/DC Converters Notebook Vcore/ GPU Low Side Switch Networking Point of Load Low Side Switch Telecom Secondary Side Rectification Pin 1 Pin 1 S D Top D D Power 33 S S S D S D S D G D G D Bottom MOSFET Maximum Ratings TA = 25 °C unless otherwise noted. Symbol VDS Drain to Source Voltage Parameter VGS Gate to Source Voltage Drain Current -Continuous ID TC = 25 °C -Continuous TC = 100 °C -Continuous TA = 25 °C -Pulsed EAS PD TJ, TSTG Single Pulse Avalanche Energy TC = 25 °C Power Dissipation TA = 25 °C Units V ±16 V (Note 5) 124 (Note 5) 78 (Note 1a) 28 (Note 4) 583 (Note 3) Power Dissipation Ratings 25 96 47 (Note 1a) Operating and Storage Junction Temperature Range 2.4 -55 to +150 A mJ W °C Thermal Characteristics RθJC Thermal Resistance, Junction to Case 2.7 RθJA Thermal Resistance, Junction to Ambient (Note 1a) 53 °C/W Package Marking and Ordering Information Device Marking FDMC2D8N025S Device FDMC2D8N025S Package Power 33 Semiconductor Components Industries, LLC, 2016 December, 2016, Rev. 1.0 Reel Size 13 ’’ Tape Width 12 mm Quantity 3000 units Publication Order Number: FDMC2D8N025S/D 1 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM www.onsemi.com Symbol Parameter Test Conditions Min. Typ. Max. Units Off Characteristics BVDSS Drain to Source Breakdown Voltage ID = 1 mA, VGS = 0 V ΔBVDSS ΔTJ Breakdown Voltage Temperature Coefficient 25 V ID = 10 mA, referenced to 25 °C IDSS Zero Gate Voltage Drain Current VDS = 20 V, VGS = 0 V 500 μA IGSS Gate to Source Leakage Current VGS = ±16 V, VDS = 0 V ±100 nA 3.0 V 22 mV/°C On Characteristics VGS(th) Gate to Source Threshold Voltage VGS = VDS, ID = 1 mA ΔVGS(th) ΔTJ Gate to Source Threshold Voltage Temperature Coefficient ID = 10 mA, referenced to 25 °C VGS = 10 V, ID = 28 A 1.4 1.9 rDS(on) Static Drain to Source On Resistance VGS = 4.5 V, ID = 25 A 1.8 2.4 VGS = 10 V, ID = 28 A, TJ = 125 °C 2.1 2.9 VDS = 5 V, ID = 28 A 200 gFS Forward Transconductance 1.0 1.6 -3 mV/°C mΩ S Dynamic Characteristics Ciss Input Capacitance Coss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate Resistance VDS = 13 V, VGS = 0 V, f = 1 MHz 0.1 3295 4615 pF 833 1170 pF 70 120 pF 0.8 2.0 Ω 13 23 ns Switching Characteristics td(on) Turn-On Delay Time tr Rise Time td(off) Turn-Off Delay Time tf Fall Time Qg VDD = 13 V, ID = 28 A, VGS = 10 V, RGEN = 6 Ω 3 10 ns 33 52 ns 3 10 ns Total Gate Charge VGS = 0 V to 10 V 45 63 nC VGS = 0 V to 4.5 V VDD = 13 V, ID = 28 A 21 30 7.9 nC 4.1 nC Qg Total Gate Charge Qgs Gate to Source Charge Qgd Gate to Drain “Miller” Charge nC Drain-Source Diode Characteristics VSD Source to Drain Diode Forward Voltage trr Reverse Recovery Time Qrr Reverse Recovery Charge VGS = 0 V, IS = 2 A (Note 2) 0.7 1.2 VGS = 0 V, IS = 28 A (Note 2) 0.8 1.3 IF = 28 A, di/dt = 236 A/μs V 27 43 ns 25 40 nC Notes: 1. RθJA is determined with the device mounted on a 1 in2 pad 2 oz copper pad on a 1.5 x 1.5 in. board of FR-4 material. RθJC is guaranteed by design while RθCA is determined by the user's board design. b) 125°C/W when mounted on a minimum pad of 2 oz copper a) 53 °C/W when mounted on a 1 in2 pad of 2 oz copper SS SF DS DF G SS SF DS DF G 2. Pulse Test: Pulse Width < 300 μs, Duty cycle < 2.0%. 3. EAS of 96 mJ is based on starting TJ = 25 °C, L = 3 mH, IAS = 8 A, VDD = 25 V, VGS = 10 V. 100% tested at L = 0.1 mH, IAS = 27 A. 4. Pulse Id please refer to Fig.11 SOA curve for detail. 5. Computed continuous current limited to Max Junction Temperature only, actual continuous current will be limited by thermal & electro-mechanical application board design. www.onsemi.com 2 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM Electrical Characteristics TJ = 25 °C unless otherwise noted. 120 VGS = 4.5 V 90 VGS = 4 V VGS = 3.5 V 60 VGS = 3 V 30 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 0.0 0.2 0.4 0.6 4 NORMALIZED DRAIN TO SOURCE ON-RESISTANCE ID, DRAIN CURRENT (A) VGS = 10 V 0.8 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX VGS = 3.5 V 2 1 0 1.0 VGS = 4 V 0 30 VDS, DRAIN TO SOURCE VOLTAGE (V) rDS(on), DRAIN TO 1.2 1.1 1.0 0.9 0.8 SOURCE ON-RESISTANCE (mΩ) NORMALIZED DRAIN TO SOURCE ON-RESISTANCE 1.3 -50 IS, REVERSE DRAIN CURRENT (A) VDS = 5 V PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX ID, DRAIN CURRENT (A) 80 TJ = 125 oC 60 TJ = 25 oC 40 oC 20 1 2 3 4 TJ = 125 oC 3 TJ = 25 oC 2 3 4 5 6 7 8 9 10 Figure 4. On-Resistance vs. Gate to Source Voltage 200 100 120 TJ = -55 ID = 28 A 6 VGS, GATE TO SOURCE VOLTAGE (V) Figure 3. Normalized On Resistance vs. Junction Temperature 0 120 PULSE DURATION = 80 μs DUTY CYCLE = 0.5% MAX 0 -25 0 25 50 75 100 125 150 TJ, JUNCTION TEMPERATURE (oC) 100 90 9 1.4 0.7 -75 60 VGS = 10 V Figure 2. Normalized On-Resistance vs. Drain Current and Gate Voltage ID = 28 A VGS = 10 V 1.5 VGS = 4.5 V ID, DRAIN CURRENT (A) Figure 1. On Region Characteristics 1.6 VGS = 3 V 3 VGS = 0 V 10 TJ = 125 oC 1 TJ = 25 oC 0.1 TJ = -55 oC 0.01 0.001 0.0 5 0.2 0.4 0.6 0.8 1.0 VGS, GATE TO SOURCE VOLTAGE (V) VSD, BODY DIODE FORWARD VOLTAGE (V) Figure 5. Transfer Characteristics Figure 6. Source to Drain Diode Forward Voltage vs. Source Current www.onsemi.com 3 1.2 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. 10000 ID = 28 A Ciss 8 CAPACITANCE (pF) VGS, GATE TO SOURCE VOLTAGE (V) 10 VDD = 13 V 6 VDD = 10 V VDD = 15 V 4 1000 Coss 100 Crss 2 0 f = 1 MHz VGS = 0 V 0 10 20 30 40 10 0.1 50 Figure 7. Gate Charge Characteristics 30 ID, DRAIN CURRENT (A) 140 TJ = 25 oC 10 TJ = 100 oC TJ = 125 oC 112 VGS = 10 V 84 VGS = 4.5 V 56 28 o RθJC = 2.7 C/W 1 0.001 0.01 0.1 1 10 0 25 100 50 75 100 125 150 o tAV, TIME IN AVALANCHE (ms) TC, CASE TEMPERATURE ( C) Figure 10. Maximum Continuous Drain Current vs Case Temperature Figure 9. Unclamped Inductive Switching Capability 10000 100 P(PK), PEAK TRANSIENT POWER (W) 1000 ID, DRAIN CURRENT (A) 10 Figure 8. Capacitance vs. Drain to Source Voltage 100 IAS, AVALANCHE CURRENT (A) 1 VDS, DRAIN TO SOURCE VOLTAGE (V) Qg, GATE CHARGE (nC) 10 μs SINGLE PULSE RθJC = 2.7 oC/W TC = 25 oC 1000 10 1 THIS AREA IS LIMITED BY rDS(on) 100 μs SINGLE PULSE TJ = MAX RATED 1 ms 10 ms 100 ms RθJC = 2.7 oC/W CURVE BENT TO MEASURED DATA TC = 25 oC 0.1 0.1 1 10 70 100 10 -5 10 -4 10 -3 10 -2 10 -1 10 t, PULSE WIDTH (sec) VDS, DRAIN to SOURCE VOLTAGE (V) Figure 11. Forward Bias Safe Operating Area Figure 12. Single Pulse Maximum Power Dissipation www.onsemi.com 4 1 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. r(t), NORMALIZED EFFECTIVE TRANSIENT THERMAL RESISTANCE 2 1 0.1 DUTY CYCLE-DESCENDING ORDER D = 0.5 0.2 0.1 0.05 0.02 0.01 PDM t1 t2 0.01 0.001 -5 10 NOTES: ZθJC(t) = r(t) x RθJC RθJC = 2.7 oC/W Peak TJ = PDM x ZθJC(t) + TC Duty Cycle, D = t1 / t2 SINGLE PULSE -4 10 -3 -2 10 10 Figure 13. Junction-to-Case Transient Thermal Response Curve www.onsemi.com 5 -1 10 t, RECTANGULAR PULSE DURATION (sec) 1 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM Typical Characteristics TJ = 25 °C unless otherwise noted. SyncFETTM Schottky body diode Characteristics Schottky barrier diodes exhibit significant leakage at high temperature and high reverse voltage. This will increase the power in the device. ON’s SyncFETTM process embeds a Schottky diode in parallel with PowerTrench MOSFET. This diode exhibits similar characteristics to a discrete external Schottky diode in parallel with a MOSFET. Figure 14 shows the reverse recovery characteristic of the FDMC2D8N025S. -2 IDSS, REVERSE LEAKAGE CURRENT (A) 30 25 CURRENT (A) 20 15 Di/Dt = 236 A/μs 10 5 0 -5 0 100 200 300 400 500 TIME (ns) 10 TJ = 125 oC -3 10 TJ = 100 oC -4 10 -5 10 TJ = 25 oC -6 10 0 5 10 15 20 25 VDS, REVERSE VOLTAGE (V) Figure 14. FDMC2D8N025S SyncFETTM Body Diode Reverse Recovery Characteristic Figure 15. SyncFETTM Body Diode Reverse Leakage vs. Drain-Source Voltage www.onsemi.com 6 FDMC2D8N025S N-Channel PowerTrench® SyncFETTM Typical Characteristics (continued) 3.40 3.20 PKG CL 8 2.37 MIN A (0.45) 8 B 5 PKG CL 3.40 3.20 PKG CL SYM CL 5 2.15 MIN (0.40) (0.65) 0.70 MIN PIN 1 INDICATOR 1 4 1 4 0.65 1.95 SEE DETAIL A 0.42 MIN (8X) LAND PATTERN RECOMMENDATION 1.95 0.10 C A B 0.37 (8X) 0.27 0.65 1 4 0.50 0.30 PKG CL 2.05 1.85 5 8 (0.34) (0.52 TYP) (0.33) TYP (2.27) 0.10 C 0.80 0.70 0.08 C 0.25 0.15 0.05 0.00 C SEATING PLANE SCALE: 2X NOTES: UNLESS OTHERWISE SPECIFIED A) PACKAGE STANDARD REFERENCE: JEDEC MO-240, ISSUE A, VAR. BA, DATED OCTOBER 2002. B) ALL DIMENSIONS ARE IN MILLIMETERS. C) DIMENSIONS DO NOT INCLUDE BURRS OR MOLD FLASH. MOLD FLASH OR BURRS DOES NOT EXCEED 0.10MM. D) DIMENSIONING AND TOLERANCING PER ASME Y14.5M-1994. E) DRAWING FILE NAME: PQFN08HREV1 ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC dba ON Semiconductor or its subsidiaries in the United States and/or other countries. ON Semiconductor owns the rights to a number of patents, trademarks, copyrights, trade secrets, and other intellectual property. A listing of ON Semiconductor’s product/patent coverage may be accessed at www.onsemi.com/site/pdf/Patent−Marking.pdf. ON Semiconductor reserves the right to make changes without further notice to any products herein. ON Semiconductor makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does ON Semiconductor assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. Buyer is responsible for its products and applications using ON Semiconductor products, including compliance with all laws, regulations and safety requirements or standards, regardless of any support or applications information provided by ON Semiconductor. “Typical” parameters which may be provided in ON Semiconductor data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including “Typicals” must be validated for each customer application by customer’s technical experts. ON Semiconductor does not convey any license under its patent rights nor the rights of others. ON Semiconductor products are not designed, intended, or authorized for use as a critical component in life support systems or any FDA Class 3 medical devices or medical devices with a same or similar classification in a foreign jurisdiction or any devices intended for implantation in the human body. Should Buyer purchase or use ON Semiconductor products for any such unintended or unauthorized application, Buyer shall indemnify and hold ON Semiconductor and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that ON Semiconductor was negligent regarding the design or manufacture of the part. ON Semiconductor is an Equal Opportunity/Affirmative Action Employer. This literature is subject to all applicable copyright laws and is not for resale in any manner. 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