SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B TYPICAL CHARACTERISTICS 0.8 - (Volts) - (Volts) IC/IB=10 0.6 IC/IB=100 0.6 0.2 0.2 0 0 0.01 0.1 1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.6 1.0 1K 0.8 0.6 - (Volts) 1.5K 1.2 - Typical Gain 1.4 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 0.01 10 1.4 1.2 1.0 h V 0.6 h 0.2 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 -55°C +25°C +100°C +175°C VCE=2V - (Volts) 1.4 1 1.2 1.0 V 0.8 0.1 0.6 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0 0 0.01 0.1 1 0.01 0.1 10 IC - Collector Current (Amps) VBE(on) v IC 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 220 E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 8 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) IC/IB=100 0.8 500 0.4 C ABSOLUTE MAXIMUM RATINGS. 0.4 V V 0.4 - Normalised Gain -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=200 IC/IB=100 0.8 FZT689B ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B 100 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltage Collector-Base Collector-Emitter V(BR)CBO 20 V IC=100µ A V(BR)CEO 20 V IC=10mA* Emitter-Base V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=16V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.10 0.50 0.45 V V V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA* Base-EmitterSaturationVoltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=0.1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz 16 pF VCB=10V, f=1MHz 30 800 ns ns IC=500mA,IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 219 SOT223 NPN SILICON PLANAR MEDIUM POWER HIGH GAIN TRANSISTOR FZT689B TYPICAL CHARACTERISTICS 0.8 - (Volts) - (Volts) IC/IB=10 0.6 IC/IB=100 0.6 0.2 0.2 0 0 0.01 0.1 1 1 10 IC - Collector Current (Amps) VCE(sat) v IC VCE(sat) v IC -55°C +25°C +100°C +175°C VCE=2V 1.6 1.0 1K 0.8 0.6 - (Volts) 1.5K 1.2 - Typical Gain 1.4 0.1 IC - Collector Current (Amps) +100°C +25°C -55°C 1.6 0.01 10 1.4 1.2 1.0 h V 0.6 h 0.2 0.4 0.2 0 0 0.01 0.1 10 1 0 1.6 0.01 0.1 1 IC - Collector Current (Amps) IC - Collector Current (Amps) hFE v IC VBE(sat) v IC 10 10 -55°C +25°C +100°C +175°C VCE=2V - (Volts) 1.4 1 1.2 1.0 V 0.8 0.1 0.6 0.4 DC 1s 100ms 10ms 1ms 100µs 0.2 0 0 0.01 0.1 1 0.01 0.1 10 IC - Collector Current (Amps) VBE(on) v IC 1 10 VCE - Collector Emitter Voltage (V) Safe Operating Area 3 - 220 E C B PARAMETER SYMBOL VALUE UNIT Collector-Base Voltage VCBO 20 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 5 V Peak Pulse Current ICM 8 A Continuous Collector Current IC 3 A Power Dissipation at Tamb=25°C Ptot 2 W Operating and Storage Temperature Range Tj:Tstg -55 to +150 °C ELECTRICAL CHARACTERISTICS (at Tamb = 25°C) IC/IB=100 0.8 500 0.4 C ABSOLUTE MAXIMUM RATINGS. 0.4 V V 0.4 - Normalised Gain -55°C +25°C +100°C +175°C Tamb=25°C IC/IB=200 IC/IB=100 0.8 FZT689B ISSUE 3 - OCTOBER 1995 FEATURES * Gain of 400 at IC=2 Amps and low saturation voltage * Extremely low equivalent on-resistance; RCE(sat) 92mΩ at 3A APPLICATIONS * Darlington replacement * Flash gun convertors and Battery powered circuits PARTMARKING DETAIL FZT689B COMPLEMENTARY TYPE FZT789B 100 PARAMETER SYMBOL MIN. TYP. MAX. UNIT CONDITIONS. Breakdown Voltage Collector-Base Collector-Emitter V(BR)CBO 20 V IC=100µ A V(BR)CEO 20 V IC=10mA* Emitter-Base V(BR)EBO 5 V IE=100µ A Collector Cut-Off Current ICBO 0.1 µA VCB=16V Emitter Cut-Off Current IEBO 0.1 µA VEB=4V Collector-Emitter Saturation Voltage VCE(sat) 0.10 0.50 0.45 V V V IC=0.1A, IB=0.5mA* IC=2A, IB=10mA* IC=3A, IB=20mA* Base-EmitterSaturationVoltage VBE(sat) 0.9 V IC=1A, IB=10mA* Base-Emitter Turn-On Voltage VBE(on) 0.9 V IC=1A, VCE=2V* Static Forward Current Transfer Ratio hFE 500 400 150 Transition Frequency fT 150 Input Capacitance Cibo Output Capacitance Cobo Switching Times ton toff IC=0.1A, VCE=2V* IC=2A, VCE=2V* IC=6A, VCE=2V* MHz IC=50mA, VCE=5V f=50MHz 200 pF VEB=0.5V, f=1MHz 16 pF VCB=10V, f=1MHz 30 800 ns ns IC=500mA,IB1=50mA IB2=50mA, VCC=10V *Measured under pulsed conditions. Pulse width=300µs. Duty cycle ≤2% Spice parameter data is available upon request for this device 3 - 219