CHENMKO ENTERPRISE CO.,LTD SURFACE MOUNT Dual N-Channel Enhancement Mode Field Effect Transistor VOLTAGE 60 Volts CHM4946JPT CURRENT 4.5 Ampere APPLICATION * Servo motor control. * Power MOSFET gate drivers. * Other switching applications. SO-8 FEATURE * Small flat package. (SO-8 ) 4.06 (0.160) 3.70 (0.146) * High density cell design for extremely low RDS(ON). * Rugged and reliable. * High saturation current capability. 8 1 CONSTRUCTION 5.00 (0.197) 4.69 (0.185) * N-Channel Enhancement .51 (0.020) .10 (0.012) 1.27 (0.05)BSC 4 5 1.75 (0.069) 1.35 (0.053) .25 (0.010) .05 (0.002) CIRCUIT 8 D1 D1 D2 D2 5 6.20 (0.244) 5.80 (0.228) Dimensions in millimeters 1 4 S1 G1 S2 G2 Absolute Maximum Ratings Symbol .25 (0.010) .17 (0.007) SO-8 TA = 25°C unless otherwise noted Parameter CHM4946JPT Units VDSS Drain-Source Voltage 60 V VGSS Gate-Source Voltage ±20 V Maximum Drain Current - Continuous 4.5 ID A - Pulsed PD Maximum Power Dissipation TJ TSTG (Note 3) 20 2000 mW Operating Temperature Range -55 to 150 °C Storage Temperature Range -55 to 150 °C Note : 1. Surface Mounted on FR4 Board , t <=10sec 2. Pulse Test , Pulse width <= 300us , Duty Cycle <= 2% 3. Repetitive Rating , Pulse width linited by maximum junction temperature 4. Guaranteed by design , not subject to production trsting Thermal characteristics RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 62.5 °C/W 2008-01 RATING CHARACTERISTIC ( CHM4946JPT ) Electrical Characteristics T Symbol A = 25°C unless otherwise noted Parameter Conditions Min 60 Typ Max Units OFF CHARACTERISTICS BVDSS Drain-Source Breakdown Voltage VGS = 0 V, ID = 250 µA IDSS Zero Gate Voltage Drain Current VDS = 60 V, VGS = 0 V I GSSF Gate-Body Leakage I GSSR Gate-Body Leakage ON CHARACTERISTICS 2 µA VGS = 20V,VDS = 0 V +100 nA VGS = -20V, VDS = 0 V -100 nA (Note 2) VGS(th) Gate Threshold Voltage RDS(ON) Static Drain-Source On-Resistance g FS V Forward Transconductance VDS = VGS, ID = 250 µA 3 1 VGS=10V, ID=4.5A 45 55 VGS=4.5V, ID=3.9A 55 75 VDS =10V, ID = 4.5A 8 V mΩ S Dynamic Characteristics Ciss Coss Crss 890 Input Capacitance Output Capacitance VDS = 25V, VGS = 0V, f = 1.0 MHz 173 pF 22 Reverse Transfer Capacitance SWITCHING CHARACTERISTICS (Note 4) Qg Total Gate Charge Q gs Gate-Source Charge Q Gate-Drain Charge gd 19 VDS=30V, ID=4.5A 24 nC 2.8 VGS=10V 3.6 t on Turn-On Time V DD= 30V 11 25 tr Rise Time I D = 1.0A , VGS = 10 V 8 18 t off Turn-Off Time RGEN= 6 Ω 34 65 tf Fall Time 9 22 nS DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS IS Drain-Source Diode Forward Current V SD Drain-Source Diode Forward Voltage I S = 2.0A , VGS = 0 V (Note 1) (Note 2) 2.0 A 1.2 V RATING CHARACTERISTIC CURVES ( CHM4946JPT ) Typical Electrical Characteristics Figure 2. Transfer Characteristics Figure 1. Output Characteristics 20 20 V G S =1 0 , 6 , 5 , 4 . 5 V 16 16 I D , DRAIN CURRENT (A) I D , DRAIN CURRENT (A) VG S =4 . 0 V 12 8 VG S =3 . 5 V 4 12 8 TJ=125°C TJ=-55°C 4 TJ=25°C 0 0 1.0 2.0 3.0 4.0 V DS , DRAIN-TO-SOURCE VOLTAGE (V) 0 5.0 Figure 3. Gate Charge 10 2.2 R DS(on) , NORMALIZED 6 4 2 0 5 10 Qg , TOTAL GATE CHARGE (nC) 15 20 Figure 5. Gate Threshold Variation with Temperature VDS=VGS ID=250uA 1.2 THRESHOLD VOLTAGE Figure 4. On-Resistance Variation with Temperature VGS=10V ID=4.5A 0 Vth , NORMALIZED GATE-SOURCE 5.0 1.9 8 1.1 1.0 0.9 0.8 0.7 0.6 -50 -25 0 25 50 75 100 TJ , JUNCTION T EMPERATURE (°C) 125 150 DRAIN-SOURCE ON-RESISTANCE VGS , GATE TO SOURCE VOLTAGE (V) VDS=30V ID=4.5A 1.3 3.0 4.0 2.0 1.0 VGS , GATE-TO-SOURCE VOLTAGE (V) 0 1.6 1.3 1.0 0.7 0.4 -100 -50 0 50 100 TJ , JUNCTION T EMPERATURE (°C) 150 200