UNISONIC TECHNOLOGIES CO., LTD DBC2315 Preliminary DUAL TRANSISTOR DIGITAL TRANSISTOR (BUILT-IN BIAS RESISTORS) DESCRIPTION * Both the DTB123Y chip and DTC115T chip in a SOT-26 package. * NPN/PNP silicon transistor(Built-in resistor type) FEATURES * Built-in bias resistors that implies easy ON/OFF applications. * The bias resistors are thin-film resistors with complete isolation to allow positive input. EQUIVALENT CIRCUITS ORDERING INFORMATION Ordering Number Package DBC2315G-AG6-R Note: Pin Assignment: C: Collector B: Bas SOT-26 E: Emitter DBC2315G-AG6-R (1)Packing Type 1 C1 Pin Assignment 2 3 4 5 E1 C2 B2 E2 6 B1 Packing Tape Reel (1) R: Tape Reel (2)Package Type (2) AG6: SOT-26 (3)Green Package (3) G: Halogen Free and Lead Free MARKING www.unisonic.com.tw Copyright © 2014 Unisonic Technologies Co., Ltd 1 of 3 QW-R222-008.b DBC2315 Preliminary DUAL TRANSISTOR ABSOLUTE MAXIMUM RATINGS (TA=25°C, unless otherwise specified) PARAMETER SYMBOL LIMITS UNIT -50 V Collector-Base Voltage VCBO 50 V -50 V Collector-Emitter Voltage VCEO 50 V -5 V Emitter-Base Voltage VEBO 5 V -500 mA Collector Current IC 100 mA Collector Power Dissipation PC 200 mW Junction Temperature TJ 150 °C Storage Temperature TSTG -55~+150 °C Note: Absolute maximum ratings are those values beyond which the device could be permanently damaged. Absolute maximum ratings are stress ratings only and functional device operation is not implied. TR1 TR2 TR1 TR2 TR1 TR2 TR1 TR2 ELECTRICAL CHARACTERISTICS (TA=25°C, unless otherwise specified) TR1 (PNP) PARAMETER OFF CHARACTERISTICS Input Voltage Output Voltage Input Current Output Current ON CHARACTERISTICS DC Current Gain SMALL SIGNAL CHARACTERISTICS Input Resistance Resistor Ratio Transition Frequency (Note) SYMBOL VIN(OFF) VIN(ON) VOUT(ON) IIN IOUT(OFF) hFE R1 R2/R1 fT TEST CONDITIONS VCC =-5V, IOUT =-100μA VOUT =-0.3V, IOUT =-20mA IOUT/IIN =-50mA/-2.5mA VIN=-5V VCC =-50V, VIN =0V VOUT =-5V, IOUT =-50mA MIN TYP MAX UNIT -0.3 V V V mA μA -2 -0.1 -0.3 -3.0 -0.5 2.2 4.5 200 2.86 5.5 TYP MAX UNIT 0.5 0.5 0.3 V V V μA μA V 56 1.54 3.6 VCE =-10V, IE =50mA, f=100MHz KΩ MHz TR2 (NPN) PARAMETER OFF CHARACTERISTICS Collector-Base Breakdown Voltage Collector-Emitter Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current Collector-Emitter Saturation Voltage ON CHARACTERISTICS DC Current Transfer Ratio SMALL SIGNAL CHARACTERISTICS Input Resistance Transition Frequency (Note) Note: Transition frequency of the device. SYMBOL BVCBO BVCEO BVEBO ICBO IEBO VCE(SAT) hFE R1 fT TEST CONDITIONS IC=50μA IC=1mA IE=50μA VCB=50V VEB=4V IC=1mA, IB=0.1mA 50 50 5 VCE=5V, IC=1mA 100 250 600 70 100 250 130 VCE=10V, IE=-5mA, f=100MHz UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw MIN KΩ MHZ 2 of 3 QW-R222-008.b DBC2315 Preliminary DUAL TRANSISTOR UTC assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all UTC products described or contained herein. UTC products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. The information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. UNISONIC TECHNOLOGIES CO., LTD www.unisonic.com.tw 3 of 3 QW-R222-008.b