CSD-4M CSD-4N w w w. c e n t r a l s e m i . c o m SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 600 THRU 800 VOLT DESCRIPTION: The CENTRAL SEMICONDUCTOR CSD-4M and CSD-4N are epoxy molded SCRs designed for sensing circuit and control system applications. MARKING: FULL PART NUMBER DPAK CASE MAXIMUM RATINGS: (TC=25°C unless otherwise noted) SYMBOL CSD-4M Peak Repetitive Off-State Voltage VDRM, VRRM 600 RMS On-State Current (TC=85°C) IT(RMS) 4.0 Peak One Cycle Surge Current, t=10ms I2t Value for Fusing, t=10ms Peak Gate Power, tp=20μs Average Gate Power Dissipation Peak Gate Current, tp=20μs ITSM I2t PGM PG (AV) IGM CSD-4N 800 UNITS V A 30 A 4.5 A2s 3.0 W 0.2 W 1.2 A Critical Rate of Rise of On-State Current di/dt 50 A/μs Operating Junction Temperature TJ Tstg -40 to +125 °C -40 to +150 °C Storage Temperature ELECTRICAL SYMBOL IDRM, IRRM IDRM, IRRM CHARACTERISTICS: (TC=25°C unless otherwise noted) TEST CONDITIONS MIN TYP Rated VDRM, VRRM, RGK=1KΩ UNITS μA 200 μA 38 200 μA IT=50mA, RGK=1KΩ 0.25 2.0 mA 0.55 0.8 V VTM VD=12V, RL=10 ITM=8.0A, tp=380μs 1.6 1.8 dv/dt VD=2 /3 VDRM, RGK=1KΩ, TC=125°C IGT IH VGT Rated VDRM, VRRM, RGK=1KΩ, TC=125°C VD=12V, RL=10Ω MAX 10 20 10 V V/μs R2 (21-January 2013) CSD-4M CSD-4N SURFACE MOUNT SILICON CONTROLLED RECTIFIERS 4.0 AMP, 600 THRU 800 VOLT DPAK CASE - MECHANICAL OUTLINE LEAD CODE: 1) Cathode 2) Anode 3) Gate 4) Anode MARKING: FULL PART NUMBER R2 (21-January 2013) w w w. c e n t r a l s e m i . c o m