M28S NPN SILICON EPITAXIAL PLANAR TRANSISTOR Features · Excellent HFE Linearity. · High DC current gain. SOT-23 A Mechanical Data · Case: SOT-23, Molded Plastic · · Terminals: Solderable per MIL-STD-202, Method 208 Polarity: See Diagrams · Approx. Weight: 0.008 grams B C TOP VIEW E D G H K M J L Dim Min Max A 0.37 0.51 B 1.20 1.40 C 2.30 2.50 D 0.89 1.03 E 0.45 0.60 G 1.78 2.05 H 2.80 3.00 J 0.013 0.10 K 0.903 1.10 L 0.45 0.61 M 0.085 0.180 a 0° 8° All Dimensions in mm Maximum Ratings and Electrical Characteristics TA = 25C unless otherwise specified Parameter Symbol Value Units Collector-Base Voltage VCBO 40 V Collector-Emitter Voltage VCEO 20 V Emitter-Base Voltage VEBO 6 V Collector Current -Continuous IC 1000 mA Collector Power Dissipation PC 200 mW Junction and Storage Temperature Tj,Tstg -55~150 ℃ 1 of 3 Electrical Characteristics TA = 25C unless otherwise specified Parameter Symbol Test conditions MIN Collector-base breakdown voltage V(BR)CBO IC=100μA,IE=0 40 V Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 20 V Emitter-base breakdown voltage V(BR)EBO IE=100μA,IC=0 6 V Collector cut-off current ICBO VCB=35V,IE=0 0.1 μA Emitter cut-off current IEBO VEB=5V,IC=0 0.1 μA DC current gain hFE VCE=1V,IC=1mA 290 VCE=1V,IC=0.1A 300 VCE=1V,IC=0.3A 300 VCE=1V,IC=0.5A 300 Collector-emitter saturation voltage VCE(sat) IC=600mA, IB=20mA Transition frequency fT VCE=10V, IC=50mA Collector output capacitance Cob VCB=10V,IE=0,f=1MHz TYP MAX UNIT 1000 0.55 100 V MHz 9 pF Rank B C D Range 300-550 500-700 650-1000 2 of 3 TYPICAL CHARACTERISTICS @ Ta=25℃ unless otherwise specified 3 of 3