GaAs, pHEMT, MMIC, High Gain Power Amplifier, 2 GHz to 50 GHz HMC1127 Data Sheet FEATURES FUNCTIONAL BLOCK DIAGRAM VDD 2 HMC1127 3 RFIN RFOUT 1 5 VGG1 4 VGG2 13085-001 Output power for 1 dB compression (P1dB): 12.5 dBm typical at 8 GHz to 30 GHz Saturated output power (PSAT): 17.5 dBm typical at 8 GHz to 30 GHz Gain: 14.5 dB typical at 30 GHz to 50 GHz Output third-order intercept (IP3): 23 dBm typical at 8 GHz to 30 GHz Supply voltage: 5 V at 80 mA 50 Ω matched input/output Die size: 2.7 mm × 1.45 mm × 0.1 mm Figure 1. APPLICATIONS Test instrumentation Microwave radios and VSATs Military and space Telecommunications infrastructure Fiber optics GENERAL DESCRIPTION The HMC1127 is a gallium arsenide (GaAs), pseudomorphic high electron mobility transfer (pHEMT), monolithic microwave integrated circuit (MMIC), distributed power amplifier that operates between 2 GHz and 50 GHz. The HMC1127 provides 14.5 dB of gain, 23 dBm output IP3 and 12.5 dBm of output power at 1 dB gain compression while Rev. B requiring 80 mA from a 5 V supply. The HMC1127 amplifier inputs/outputs are internally matched to 50 Ω facilitating integration into multichip modules (MCMs). All data is taken with the chip connected via two 0.025 mm (1 mil) wire bonds of minimal length 0.31 mm (12 mils). Document Feedback Information furnished by Analog Devices is believed to be accurate and reliable. However, no responsibility is assumed by Analog Devices for its use, nor for any infringements of patents or other rights of third parties that may result from its use. Specifications subject to change without notice. No license is granted by implication or otherwise under any patent or patent rights of Analog Devices. Trademarks and registered trademarks are the property of their respective owners. One Technology Way, P.O. Box 9106, Norwood, MA 02062-9106, U.S.A. Tel: 781.329.4700 ©2015–2018 Analog Devices, Inc. All rights reserved. Technical Support www.analog.com HMC1127 Data Sheet TABLE OF CONTENTS Features .............................................................................................. 1 ESD Caution...................................................................................5 Applications ....................................................................................... 1 Pin Configuration and Function Descriptions..............................6 Functional Block Diagram .............................................................. 1 Interface Schematics .....................................................................7 General Description ......................................................................... 1 Typical Performance Characteristics ..............................................8 Revision History ............................................................................... 2 Applications Information .............................................................. 13 Specifications..................................................................................... 3 2 GHz to 8 GHz Frequency Range ............................................. 3 Mounting and Bonding Techniques for Millimeterwave GaAs MMICs ......................................................................................... 13 8 GHz to 30 GHz Frequency Range ........................................... 3 Application Circuit ......................................................................... 15 30 GHz to 40 GHz Frequency Range ......................................... 4 Assembly Diagram ..................................................................... 15 40 GHz to 50 GHz Frequency Range ......................................... 4 Outline Dimensions ....................................................................... 16 Absolute Maximum Ratings ............................................................ 5 Ordering Guide .......................................................................... 16 REVISION HISTORY 1/2018—Rev. A to Rev. B Changes to Figure 1 .......................................................................... 1 Changes to Figure 4 .......................................................................... 7 Changes to Ordering Guide .......................................................... 16 5/2015—Rev. 00.1214 to Rev. A This Hittite Microwave Products data sheet has been reformatted to meet the styles and standards of Analog Devices, Inc. Updated Format .................................................................. Universal Changes to Table 5 ............................................................................ 5 Added Applications Information Section and Figure 35; Renumbered Sequentially.............................................................. 13 Added Ordering Guide Section .................................................... 16 Rev. B | Page 2 of 16 Data Sheet HMC1127 SPECIFICATIONS 2 GHz TO 8 GHz FREQUENCY RANGE TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical. Table 1. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT POWER Output Power for 1 dB Compression Saturated Output Power Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 2 12 11 Typ Max 8 15 0.005 Unit GHz dB dB/°C 17 10 dB dB 14 18.5 25.5 8 80 dBm dBm dBm dBm mA 8 GHz TO 30 GHz FREQUENCY RANGE TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical. Table 2. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT POWER 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 8 10.5 9.5 Rev. B | Page 3 of 16 Typ Max 30 13.5 0.006 Unit GHz dB dB/°C 18 20 dB dB 12.5 17.5 23 6.5 80 dBm dBm dBm dBm mA HMC1127 Data Sheet 30 GHz TO 40 GHz FREQUENCY RANGE TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical. Table 3. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT POWER 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 30 11.5 9 Typ Max 40 14.5 0.011 Unit GHz dB dB/°C 20 17 dB dB 12 17 22 6 80 dBm dBm dBm dBm mA 40 GHz TO 50 GHz FREQUENCY RANGE TA = +25°C, VDD = +5 V, VGG2 = +1.4 V, IDD = 80 mA. Adjust VGG1 between −2 V and 0 V to achieve IDD = 80 mA typical. Table 4. Parameter FREQUENCY RANGE GAIN Gain Variation Over Temperature RETURN LOSS Input Output OUTPUT POWER 1 dB Compression (P1dB) Saturated Output Power (PSAT) Output Third-Order Intercept NOISE FIGURE SUPPLY CURRENT Symbol Test Conditions/Comments P1dB PSAT IP3 Measurement taken at POUT/tone = 10 dBm IDD VDD = 4 V, VDD = 5 V, VDD = 6 V, VDD = 7 V, or VDD = 8 V Min 40 11.5 8.5 Rev. B | Page 4 of 16 Typ Max 50 14.5 0.012 Unit GHz dB dB/°C 13 13 dB dB 10.5 15 18 6.5 80 dBm dBm dBm dBm mA Data Sheet HMC1127 ABSOLUTE MAXIMUM RATINGS Table 5. Parameter Drain Bias Voltage (VDD) Gate Bias Voltage VGG1 VGG2 For VDD = 8 V1 For VDD = 7 V For VDD = 6 V For VDD = 4 V to 5 V RF Input Power (RFIN) Channel Temperature Continuous Power Dissipation, PDISS (TA = 85°C, Derate 26.1 mW/°C Above 85°C) Thermal Resistance, RTH (Channel to Die Bottom) Storage Temperature Range Operating Temperature Range ESD Sensitivity, Human Body Model (HBM) 1 2 Rating 8.5 V −3 V dc to 0 V dc 3.6 V 3.0 V >2.0 V >1.2 V 22 dBm 175°C 2.53 W Stresses at or above those listed under Absolute Maximum Ratings may cause permanent damage to the product. This is a stress rating only; functional operation of the product at these or any other conditions above those indicated in the operational section of this specification is not implied. Operation beyond the maximum operating conditions for extended periods may affect product reliability. ESD CAUTION 38.3°C/W2 −65°C to +150°C −55°C to +85°C Class1A, passed 250 V IDD < 125 mA. Based on a thermal epoxy of 20 W/°C. Rev. B | Page 5 of 16 HMC1127 Data Sheet PIN CONFIGURATION AND FUNCTION DESCRIPTIONS VDD 2 3 RFOUT HMC1127 TOP VIEW (Not to Scale) 1 5 VGG1 4 VGG2 13085-106 RFIN Figure 2. Pad Configuration Table 6. Pad Function Descriptions Pad No. 1 2 Mnemonic RFIN VDD 3 4 RFOUT VGG2 5 Die Bottom VGG1 GND Description RF Input. This pin is ac-coupled and matched to 50 Ω. Power Supply Voltage for the Amplifier, with Integrated RF Choke. Connect dc bias to this pad to provide drain current (IDD). RF Output. This pin is ac-coupled and matched to 50 Ω. Gate Control 2 for Amplifier. Attach bypass capacitors as shown in Figure 38. For nominal operation, apply 1.4 V to VGG2. Gate Control 1 for Amplifier. Attach bypass capacitors as shown in Figure 38. Adjust this pad to achieve IDD = 80 mA. Die bottom must be connected to RF/dc ground. Rev. B | Page 6 of 16 Data Sheet HMC1127 VGG2 Figure 3. RFIN Interface Schematic Figure 6. VGG2 Interface Schematic 13085-104 RFIN 13085-103 13085-100 INTERFACE SCHEMATICS 13085-101 VGG1 Figure 4. VDD Interface Schematic Figure 7. VGG1 Interface Schematic GND 13085-102 RFOUT Figure 5. RFOUT Interface Schematic 13085-105 VDD Figure 8. GND Interface Schematic Rev. B | Page 7 of 16 HMC1127 Data Sheet TYPICAL PERFORMANCE CHARACTERISTICS 20 20 18 10 –20 0 5 10 15 20 25 30 35 40 45 50 10 6 55 FREQUENCY (GHz) 4 –10 RETURN LOSS (dB) –10 –20 +25°C +85°C –55°C 5 10 15 20 25 30 35 40 45 10 15 20 25 30 35 40 45 50 –20 +25°C +85°C –55°C –30 50 FREQUENCY (GHz) –40 13085-003 RETURN LOSS (dB) 0 0 5 Figure 12. Gain vs. Frequency at Various Temperatures 0 –40 0 FREQUENCY (GHz) Figure 9. Response (Gain and Return Loss) vs. Frequency –30 +25°C +85°C –55°C Figure 10. Input Return Loss vs. Frequency at Various Temperatures 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) 13085-006 –40 12 8 S21 S11 S22 –30 14 13085-005 GAIN (dB) –10 13085-002 RESPONSE (dB) 16 0 Figure 13. Output Return Loss vs. Frequency at Various Temperatures 20 0 18 –20 4V 5V 6V 7V 8V –30 –40 0 5 10 15 20 25 30 FREQUENCY (GHz) 35 40 45 14 12 10 80mA 95mA 105mA 125mA 8 6 50 Figure 11. Gain vs. Frequency for Various Supply Voltages (For VDD = 4 V, VGG2 =1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD = 8 V, VGG2 = 3.6 V) Rev. B | Page 8 of 16 4 0 5 10 15 20 25 30 FREQUENCY (GHz) 35 40 45 50 13085-007 GAIN (dB) 16 13085-004 GAIN (dB) –10 Figure 14. Gain vs. Frequency at Various IDD (VDD = 5 V, VGG2 = 1.4 V) Data Sheet HMC1127 21 21 19 17 17 13 11 9 7 7 5 5 10 14 18 22 26 30 34 38 42 46 50 23 3 PSAT (dBm) 17 15 13 13 11 9 9 7 7 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 5 13085-009 14 Figure 16. PSAT vs. Frequency at Various Temperatures 21 17 19 15 17 PSAT (dBm) 19 13 11 2 6 10 14 2 6 38 42 46 50 10 14 18 22 26 30 34 38 42 46 50 15 13 80mA 95mA 105mA 125mA 9 7 18 22 26 30 34 38 42 46 FREQUENCY (GHz) 50 13085-010 3 34 4V 5V 6V 7V 8V 11 80mA 95mA 105mA 125mA 5 30 Figure 19. PSAT vs. Frequency for Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 23 7 26 FREQUENCY (GHz) 21 9 22 15 11 10 18 21 17 6 14 23 19 2 10 Figure 18. P1dB vs. Frequency for Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 19 5 6 FREQUENCY (GHz) +25°C +85°C –55°C 21 2 13085-012 6 Figure 17. P1dB vs. Frequency for Various Supply Currents (VDD = 5 V, VGG2 = 1.4 V) 5 2 6 10 14 18 22 26 30 34 38 42 46 FREQUENCY (GHz) Figure 20. PSAT vs. Frequency for Various Supply Currents (VDD = 5 V, VGG2 = 1.4 V) Rev. B | Page 9 of 16 50 13085-013 2 Figure 15. P1dB vs. Frequency at Various Temperatures PSAT (dBm) 11 9 FREQUENCY (GHz) P1dB (dBm) 13 13085-011 P1dB (dBm) 15 13085-008 P1dB (dBm) 15 3 4V 5V 6V 7V 8V 19 +25°C +85°C –55°C Data Sheet 30 30 28 28 26 26 24 24 22 22 IP3 (dBm) 20 18 20 4V 5V 6V 7V 8V 18 16 16 +25°C +85°C –55°C 14 14 12 12 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 10 13085-014 10 Figure 21. Output IP3 vs. Frequency at Various Temperatures, POUT = 0 dBm/Tone 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 13085-017 IP3 (dBm) HMC1127 Figure 24. Output IP3 vs. Frequency for Various Supply Voltages, POUT = 0 dBm/Tone (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 70 30 28 60 26 50 20 18 80mA 95mA 105mA 14 30 20 10 12 2 6 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 0 –5 13085-015 10 60 50 50 IM3 (dBc) 60 40 30 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz –2 4 7 10 POUT/TONE (dBm) 7 10 30 10 1 4 40 20 13085-016 IM3 (dBc) 70 0 –5 1 Figure 25. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 4 V, VGG2 = 1.4 V 70 10 –2 POUT/TONE (dBm) Figure 22. Output IP3 vs. Frequency for Various Supply Currents, POUT = 0 dBm/Tone (VDD = 5 V, VGG2 = 1.4 V) 20 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz Figure 23. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 5 V, VGG2 = 1.4 V 0 –5 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz –2 1 4 7 10 POUT/TONE (dBm) Figure 26. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 6 V, VGG2 = 2 V Rev. B | Page 10 of 16 13085-019 16 40 13085-018 22 IM3 (dBc) IP3 (dBm) 24 HMC1127 70 60 60 50 50 40 40 30 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 20 10 0 –5 10 –2 1 10 7 4 0 –5 4 10 7 12 11 +25°C +85°C –55°C 10 NOISE FIGURE (dB) 10 9 8 7 6 9 8 7 6 5 5 4 4 10 14 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 3 Figure 28. Noise Figure vs. Frequency at Various Temperatures –10 10 –20 9 –30 ISOLATION (dB) 11 8 7 6 80mA 90mA 100mA 110mA 6 10 14 18 22 26 30 34 38 42 46 50 +25°C +85°C –55°C –40 –50 –60 –70 –80 18 22 26 30 34 38 42 46 50 FREQUENCY (GHz) 13085-022 2 14 10 Figure 31. Noise Figure vs. Frequency at Various Supply Voltages (For VDD = 4 V, VGG2 = 1.4 V; for VDD = 5 V, VGG2 = 1.4 V; for VDD = 6 V, VGG2 = 2 V; for VDD = 7 V, VGG2 = 3 V; for VDD =8 V, VGG2 = 3.6 V) 0 4 6 FREQUENCY (GHz) 12 5 2 Figure 29. Noise Figure vs. Frequency at Various Supply Currents (VDD = 5 V, VGG2 = 1.4 V) –90 0 5 10 15 20 25 30 35 40 45 50 FREQUENCY (GHz) Figure 32. Reverse Isolation vs. Frequency at Various Temperatures Rev. B | Page 11 of 16 13085-025 6 13085-021 2 4V 5V 6V 7V 8V 13085-024 11 NOISE FIGURE (dB) 1 Figure 30. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 8 V, VGG2 = 3.6 V 12 3 –2 POUT/TONE (dBm) Figure 27. Output Third-Order Intermodulation (IM3) vs. POUT/Tone at VDD = 7 V, VGG2 = 3 V 3 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 20 POUT/TONE (dBm) NOISE FIGURE (dB) 30 13085-023 IM3 (dBc) 70 13085-020 IM3 (dBc) Data Sheet Data Sheet 18 124 0.70 16 118 0.65 14 112 12 106 10 100 8 94 6 88 0 –9 –7 –5 –3 –1 1 3 5 7 INPUT POWER (dBm) Figure 33. Power Compression at 24 GHz IDD (mA) 82 9 0.55 0.50 0.45 0.40 0.35 0.30 76 0.25 70 0.20 –9 –7 –5 –3 –1 1 3 INPUT POWER (dBm) 5 7 9 13085-027 2 POWER DISSIPATION (W) POUT GAIN PAE IDD 4 2GHz 10GHz 20GHz 30GHz 40GHz 50GHz 0.60 13085-026 POUT (dBm), GAIN (dB), PAE (%) HMC1127 Figure 34. Power Dissipation vs. Input Power at 85°C for Various Frequencies Rev. B | Page 12 of 16 Data Sheet HMC1127 APPLICATIONS INFORMATION The HMC1127 is a GaAs, pHEMT, MMIC, cascode distributed power amplifier. 0.102mm (0.004") THICK GaAs MMIC The cascode distributed amplifier uses a fundamental cell of two field effect transistors (FETs) in series, source to drain. This fundamental cell then duplicates a number of times. The major benefit of this is an increase in the operation bandwidth. The basic schematic for a fundamental cell is given in Figure 35. WIRE BOND 0.076mm (0.003") RF GROUND PLANE VDD 0.127mm (0.005") THICK ALUMINA THIN FILM SUBSTRATE RFIN Figure 36. Die Without Moly Tab 13085-107 0.102mm (0.004") THICK GaAs MMIC Figure 35. Fundamental Cell Schematic The recommended bias sequence during power up is the following: 1. 2. 3. 4. 5. 6. WIRE BOND 0.076mm (0.003") Connect GND. Set VGG1 to −2 V. Set VDD to 5 V. Set VGG2 to 1.4 V. Increase VGG1 to achieve a typical quiescent current (IDQ) = 80 mA. Apply the RF signal. RF GROUND PLANE 0.150mm (0.005") THICK MOLY TAB 0.254mm (0.010") THICK ALUMINA THIN FILM SUBSTRATE The recommended bias sequence during power down is the following: 1. 2. 3. 4. 13083-038 VGG1 13083-037 RFOUT VGG2 Figure 37. Die With Moly Tab Turn off the RF signal. Decrease VGG1 to −2 V to achieve IDQ = 0 mA. Decrease VGG2 to 0 V. Decrease VDD to 0 V. Place microstrip substrates as close to the die as possible to minimize bond wire length. Typical die to substrate spacing is 0.076 mm to 0.152 mm (3 mil to 6 mil). Handling Precautions Increase VGG1 to 0 V. To avoid permanent damage, follow these storage, cleanliness, static sensitivity, transient, and general handling precautions: MOUNTING AND BONDING TECHNIQUES FOR MILLIMETERWAVE GAAS MMICS Attach the die directly to the ground plane eutectically or with conductive epoxy (see the Handling Precautions section, the Mounting section, and the Wire Bonding section). Microstrip, 50 Ω, transmission lines on 0.127 mm (5 mil) thick alumina, thin film substrates are recommended for bringing the radio frequency to and from the chip (see Figure 36). When using 0.254 mm (10 mil) thick alumina, thin film substrates, raise the die 0.150 mm (6 mils) to ensure that the surface of the die is coplanar with the surface of the substrate. One way to accomplish this is to attach the 0.102 mm (4 mil) thick die to a 0.150 mm (6 mil) thick, molybdenum (Mo) heat spreader (moly tab) which can then be attached to the ground plane (see Figure 36 and Figure 37). Rev. B | Page 13 of 16 Place all bare die in either waffle or gel-based ESD protective containers and then seal the die in an ESD protective bag for shipment. Once the sealed ESD protective bag is opened, store all die in a dry nitrogen environment. Handle the chips in a clean environment. Do not attempt to clean the chip using liquid cleaning systems. Follow ESD precautions to protect against ESD strikes. While bias is applied, suppress instrument and bias supply transients. Use shielded signal and bias cables to minimize inductive pick up. Handle the chip along the edges with a vacuum collet or with a sharp pair of bent tweezers. The surface of the chip may have fragile air bridges and must not be touched with vacuum collet, tweezers, or fingers. HMC1127 Data Sheet Mounting Wire Bonding The chip is back metallized and can be die mounted with AuSn eutectic preforms or with electrically conductive epoxy. Ensure that the mounting surface is clean and flat. RF bonds made with two 1 mil wires are recommended. Ensure that these bonds are thermosonically bonded with a force of 40 grams to 60 grams. DC bonds of an 0.001 in. (0.025 mm) diameter, thermosonically bonded, are recommended. Make ball bonds with a force of 40 grams to 50 grams and wedge bonds with a force of 18 grams to 22 grams. Make all bonds with a nominal stage temperature of 150°C. Apply a minimum amount of ultrasonic energy to achieve reliable bonds. Make all bonds as short as possible, less than 12 mils (0.31 mm). When eutectic die attached, a 80/20 gold tin preform is recommended with a work surface temperature of 255°C and a tool temperature of 265°C. When hot 90/10 nitrogen/hydrogen gas is applied, ensure that tool tip temperature is 290°C. Do not expose the chip to a temperature greater than 320°C for more than 20 seconds. For attachment, no more than 3 seconds of scrubbing is required. When epoxy die attached, apply a minimum amount of epoxy to the mounting surface so that a thin epoxy fillet is observed around the perimeter of the chip once it is placed into position. Cure epoxy per the schedule of the manufacturer. Rev. B | Page 14 of 16 Data Sheet HMC1127 APPLICATION CIRCUIT VDD 0.1µF 100pF 2 1 RFIN 4 3 RFOUT VGG1 VGG2 0.1µF 100pF 100pF 0.1µF 13085-029 5 Figure 38. Typical Applications Circuit ASSEMBLY DIAGRAM TO VDD SUPPLY 0.1µF ALL BOND WIRES ARE 1mil DIAMETER 3mil NOMINAL GAP 100pF 50Ω TRANSMISSION LINE 0.1µF TO VGG1 SUPPLY Figure 39. Assembly Diagram Rev. B | Page 15 of 16 100pF 0.1µF TO VGG2 SUPPLY 13085-028 100pF HMC1127 Data Sheet OUTLINE DIMENSIONS 0.150 0.077 2.700 0.100 0.150 0.100 × 0.100 2 0.200 3 0.709 0.200 1.450 0.150 0.200 1 4 5 TOP VIEW 0.095 0.200 1.083 (CIRCUIT SIDE) 0.150 0.410 0.150 0.320 0.042 0.150 SIDE VIEW 03-19-2015-A 0.200 0.804 Figure 40. 5-Pad Bare Die [CHIP] (C-5-3) Dimensions shown in millimeters ORDERING GUIDE Model HMC1127 HMC1127-SX Temperature Range −55°C to +85°C −55°C to +85°C Package Description 5-Pad Bare Die [CHIP] 5-Pad Bare Die [CHIP] ©2015–2018 Analog Devices, Inc. All rights reserved. Trademarks and registered trademarks are the property of their respective owners. D13085-0-1/18(B) Rev. B | Page 16 of 16 Package Option C-5-3 C-5-3